KR20120049220A - 패러데이 프로브를 이용한 마스크 헬스 모니터 - Google Patents

패러데이 프로브를 이용한 마스크 헬스 모니터 Download PDF

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Publication number
KR20120049220A
KR20120049220A KR1020127000576A KR20127000576A KR20120049220A KR 20120049220 A KR20120049220 A KR 20120049220A KR 1020127000576 A KR1020127000576 A KR 1020127000576A KR 20127000576 A KR20127000576 A KR 20127000576A KR 20120049220 A KR20120049220 A KR 20120049220A
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KR
South Korea
Prior art keywords
mask
ion
ion beam
measuring device
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127000576A
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English (en)
Korean (ko)
Inventor
벤자민 비. 리오돈
니콜라스 피.티. 배이트만
윌리암 티. 위버
러셀 제이. 로우
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20120049220A publication Critical patent/KR20120049220A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020127000576A 2009-07-30 2010-07-30 패러데이 프로브를 이용한 마스크 헬스 모니터 Withdrawn KR20120049220A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22985209P 2009-07-30 2009-07-30
US61/229,852 2009-07-30
US12/845,665 2010-07-28
US12/845,665 US8164068B2 (en) 2009-07-30 2010-07-28 Mask health monitor using a faraday probe

Publications (1)

Publication Number Publication Date
KR20120049220A true KR20120049220A (ko) 2012-05-16

Family

ID=43037126

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127000576A Withdrawn KR20120049220A (ko) 2009-07-30 2010-07-30 패러데이 프로브를 이용한 마스크 헬스 모니터

Country Status (7)

Country Link
US (2) US8164068B2 (https=)
EP (1) EP2460173A1 (https=)
JP (1) JP2013501360A (https=)
KR (1) KR20120049220A (https=)
CN (1) CN102576640B (https=)
TW (1) TWI467622B (https=)
WO (1) WO2011014779A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8378318B1 (en) 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
CN103185893A (zh) * 2011-12-31 2013-07-03 北京中科信电子装备有限公司 一种检测法拉第工作状态的方法
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
US9299534B2 (en) * 2014-01-31 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Method and mechanism for erosion detection of defining apertures
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
US12013238B2 (en) * 2020-08-26 2024-06-18 Tae Technologies, Inc. Systems, devices, and methods for beam misalignment detection
CN114113717B (zh) * 2021-11-24 2022-08-30 北京航空航天大学 一种插拔式全封闭法拉第探针
US20250273427A1 (en) * 2024-02-26 2025-08-28 Applied Materials, Inc. Isolation Valve for Implant Productivity Enhancement

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
JP4363694B2 (ja) * 1998-04-17 2009-11-11 株式会社東芝 イオン注入装置および半導体装置の製造方法
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP5142114B2 (ja) * 2000-12-05 2013-02-13 株式会社アルバック イオン注入方法およびイオン注入装置
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
DE102004058412B4 (de) 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7329882B2 (en) * 2005-11-29 2008-02-12 Axcelis Technologies, Inc. Ion implantation beam angle calibration
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7619229B2 (en) 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法
US7521691B2 (en) * 2006-12-08 2009-04-21 Varian Semiconductor Equipment Associates, Inc. Magnetic monitoring of a Faraday cup for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces

Also Published As

Publication number Publication date
JP2013501360A (ja) 2013-01-10
WO2011014779A1 (en) 2011-02-03
TW201117256A (en) 2011-05-16
US8455847B2 (en) 2013-06-04
US8164068B2 (en) 2012-04-24
TWI467622B (zh) 2015-01-01
US20120181443A1 (en) 2012-07-19
EP2460173A1 (en) 2012-06-06
CN102576640B (zh) 2015-03-11
US20110031408A1 (en) 2011-02-10
CN102576640A (zh) 2012-07-11

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000