JP2013501354A - 半導体技術を用いた熱電装置 - Google Patents
半導体技術を用いた熱電装置 Download PDFInfo
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- JP2013501354A JP2013501354A JP2012522137A JP2012522137A JP2013501354A JP 2013501354 A JP2013501354 A JP 2013501354A JP 2012522137 A JP2012522137 A JP 2012522137A JP 2012522137 A JP2012522137 A JP 2012522137A JP 2013501354 A JP2013501354 A JP 2013501354A
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- temperature
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 abstract description 27
- 230000007423 decrease Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 230000005678 Seebeck effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
Claims (10)
- 熱源(16)に近接して配置された温熱側(Th)と、冷熱側(Tc)とを備え、且つ、前記温熱側と前記冷熱側との間の温度差に従って、信号(U)を供給する、半導体技術で集積化された熱電装置であって、
前記温熱側および前記冷熱側は、熱源の温度が変化する際に、前記温熱側の温度と前記冷熱側の温度とが等しくなり易いように、配置される、ことを特徴とする熱電装置。 - 前記熱源の温度が変化した時刻からの、前記信号の連続的に可変の部分(t0−t1)に従って、有用な情報を供給する測定回路を備える、ことを特徴とする請求項1に記載の熱電装置。
- 前記温熱側と前記冷熱側との間の距離は、100μm未満である、ことを特徴とする請求項1に記載の熱電装置。
- 前記温熱側は、前記半導体技術の相互接続レベルで作られた熱ブリッジ(36)によって、前記熱源に結合される、ことを特徴とする請求項1に記載の熱電装置。
- 絶縁体(34)上に作製される、ことを特徴とする請求項1に記載の熱電装置。
- 複数の相互接続レベル(M1−M7)を提供し、且つ、レベル毎に金属の最少比率を必要とする、技術において作られており、
前記温熱側から開始して、前記冷熱側に向かうセンサの面から遠ざかる、ステップ構造(40)を備え、
前記ステップ構造のステップは、連続する相互接続レベルにおいて金属で作られる、ことを特徴とする請求項1に記載の熱電装置。 - 前記ステップは、レベル毎の最少金属比率要件を満たすことを可能にする、最小寸法により実現される、ことを特徴とする請求項6に記載の熱電装置。
- 外部からアクセス可能なストリップに前記冷熱側を接続する、熱ブリッジ(38)を備える、ことを特徴とする請求項1に記載の熱電装置。
- 前記熱源は、チョップモード(chopped mode)で動作するトランジスタである、ことを特徴とする請求項1に記載の熱電装置。
- 前記熱ブリッジ(36,38)は、前記装置と電気的に接触せずに、前記装置の一端の周りに配置されるビアを備える、ことを特徴とする請求項4または8に記載の熱電装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0903721 | 2009-07-29 | ||
FR0903721A FR2948820A1 (fr) | 2009-07-29 | 2009-07-29 | Dispositif thermoelectrique en technologie de semi-conducteurs |
PCT/EP2010/060820 WO2011012586A1 (fr) | 2009-07-29 | 2010-07-26 | Dispositif thermoelectrique en technologie de semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013501354A true JP2013501354A (ja) | 2013-01-10 |
JP5738859B2 JP5738859B2 (ja) | 2015-06-24 |
Family
ID=42174251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012522137A Expired - Fee Related JP5738859B2 (ja) | 2009-07-29 | 2010-07-26 | 半導体技術を用いた熱電装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8829639B2 (ja) |
EP (1) | EP2460196B1 (ja) |
JP (1) | JP5738859B2 (ja) |
KR (1) | KR101742836B1 (ja) |
CN (1) | CN102598328B (ja) |
FR (1) | FR2948820A1 (ja) |
WO (1) | WO2011012586A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074662A (ja) * | 2009-12-09 | 2012-04-12 | Sony Corp | 熱電発電装置、熱電発電方法、電気信号検出装置及び電気信号検出方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2973164B1 (fr) * | 2011-03-25 | 2013-04-26 | Commissariat Energie Atomique | Capteur differentiel de temperature et ses capacites en technologie cmos/bicmos |
FR2978871B1 (fr) * | 2011-08-02 | 2013-07-19 | Commissariat Energie Atomique | Dispositif de refroidissement muni d'un capteur thermoelectrique |
US10777727B2 (en) * | 2011-09-08 | 2020-09-15 | Yeda Research And Development Co. Ltd. | Efficiency-enhanced thermoelectric devices |
FR2982080B1 (fr) | 2011-10-26 | 2013-11-22 | St Microelectronics Rousset | Procede de communication sans fil entre deux dispositifs, notamment au sein d'un meme circuit integre, et systeme correspondant |
US20130334531A1 (en) * | 2012-06-15 | 2013-12-19 | Franz Jost | Systems and methods for measuring temperature and current in integrated circuit devices |
FR3030889B1 (fr) | 2014-12-19 | 2017-01-27 | Commissariat Energie Atomique | Capteur differentiel de temperature. |
FR3030734B1 (fr) | 2014-12-19 | 2017-01-27 | Commissariat Energie Atomique | Capteur differentiel de temperature. |
US9841772B2 (en) * | 2015-12-03 | 2017-12-12 | Te Connectivity Corporation | Temperature responsive thermal bridge |
CN109037209A (zh) * | 2018-08-23 | 2018-12-18 | 湖南格兰德芯微电子有限公司 | 集成电路布图结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04335560A (ja) * | 1991-05-10 | 1992-11-24 | Hitachi Ltd | 半導体装置 |
JP2002148288A (ja) * | 2000-11-08 | 2002-05-22 | Yazaki Corp | 電流検出装置 |
JP2006269835A (ja) * | 2005-03-24 | 2006-10-05 | Nec Electronics Corp | 半導体装置 |
JP2007214285A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置 |
JP2008166725A (ja) * | 2006-12-29 | 2008-07-17 | Dongbu Hitek Co Ltd | Cmos素子及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN2590169Y (zh) * | 2002-12-04 | 2003-12-03 | 威盛电子股份有限公司 | 匀热式多晶片电子元件封装组件 |
US7544883B2 (en) * | 2004-11-12 | 2009-06-09 | International Business Machines Corporation | Integrated thermoelectric cooling devices and methods for fabricating same |
US8169045B2 (en) * | 2009-04-28 | 2012-05-01 | Infineon Technologies Ag | System and method for constructing shielded seebeck temperature difference sensor |
-
2009
- 2009-07-29 FR FR0903721A patent/FR2948820A1/fr active Pending
-
2010
- 2010-07-26 JP JP2012522137A patent/JP5738859B2/ja not_active Expired - Fee Related
- 2010-07-26 KR KR1020127005356A patent/KR101742836B1/ko active IP Right Grant
- 2010-07-26 WO PCT/EP2010/060820 patent/WO2011012586A1/fr active Application Filing
- 2010-07-26 CN CN201080043429.9A patent/CN102598328B/zh not_active Expired - Fee Related
- 2010-07-26 EP EP10737880.4A patent/EP2460196B1/fr not_active Not-in-force
- 2010-07-26 US US13/387,821 patent/US8829639B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04335560A (ja) * | 1991-05-10 | 1992-11-24 | Hitachi Ltd | 半導体装置 |
JP2002148288A (ja) * | 2000-11-08 | 2002-05-22 | Yazaki Corp | 電流検出装置 |
JP2006269835A (ja) * | 2005-03-24 | 2006-10-05 | Nec Electronics Corp | 半導体装置 |
JP2007214285A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置 |
JP2008166725A (ja) * | 2006-12-29 | 2008-07-17 | Dongbu Hitek Co Ltd | Cmos素子及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074662A (ja) * | 2009-12-09 | 2012-04-12 | Sony Corp | 熱電発電装置、熱電発電方法、電気信号検出装置及び電気信号検出方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102598328A (zh) | 2012-07-18 |
CN102598328B (zh) | 2015-09-16 |
WO2011012586A1 (fr) | 2011-02-03 |
EP2460196B1 (fr) | 2017-04-19 |
KR101742836B1 (ko) | 2017-06-01 |
US20120217608A1 (en) | 2012-08-30 |
EP2460196A1 (fr) | 2012-06-06 |
FR2948820A1 (fr) | 2011-02-04 |
KR20120080566A (ko) | 2012-07-17 |
US8829639B2 (en) | 2014-09-09 |
JP5738859B2 (ja) | 2015-06-24 |
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