US20080025371A1 - On chip temperature measuring and monitoring circuit and method - Google Patents

On chip temperature measuring and monitoring circuit and method Download PDF

Info

Publication number
US20080025371A1
US20080025371A1 US11/867,338 US86733807A US2008025371A1 US 20080025371 A1 US20080025371 A1 US 20080025371A1 US 86733807 A US86733807 A US 86733807A US 2008025371 A1 US2008025371 A1 US 2008025371A1
Authority
US
United States
Prior art keywords
junction
temperature
voltage
current source
measurement circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/867,338
Inventor
Robert Franch
Keith Jenkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/824,297 priority Critical patent/US7255476B2/en
Priority to US11/747,620 priority patent/US7452128B2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US11/867,338 priority patent/US20080025371A1/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FRANCH, ROBERT L., JENKINS, KEITH A.
Publication of US20080025371A1 publication Critical patent/US20080025371A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using semiconducting elements having PN junctions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon

Abstract

A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention is related to integrated circuits (ICs) and more particularly to circuits and methods of measuring and monitoring device temperature on ICs.
  • 2. Background Description
  • It is well known that diode current can be approximated by I=I0(eqV/kT−1), where I0 is the diode turn on current, q is the charge magnitude, V is the junction bias voltage, k is the Boltzmann's constant and T is junction temperature. Similarly, field effect transistor (FET) characteristics, including threshold voltage (VT), device drain to source current (Ids) and leakage currents are related to the temperature of the material (e.g., semiconductor) embodying the FET by well known relationships. In a typical integrated circuit (IC), individual circuit device currents combine to drive capacitive loads at circuit nodes. So, if local (device or junction) temperature is known, device current and, correspondingly, circuit performance can be calculated very precisely. Consequently, an accurate device model requires an accurate device current description.
  • Current through semiconductor (e.g., silicon) junctions and devices generates heat locally. On a typical IC chip, each such junction or device may act as a local heat source and, more particularly, as a point heat source. How heat is conducted away from each point source depends upon its surrounding and thermally connected structures. For example, how the point source cools may depend in part on whether the circuit is in bulk silicon (Si) or silicon on insulator (SOI), whether the heat source is a single isolated device on a silicon island or is one heat source amongst a group of heat sources, whether metal directly contacts the heat source and etc. Glass (Si/SiO) is a poor heat conductor. So, circuits and even individual devices on a silicon island may be thermally insulated from each other, even though they reside on the same chip. Unfortunately, heat dissipation in modern SOI is not well understood. Previously, only crude imprecise temperature measurements have been available, e.g., chip level thermal measurements or using thermal imaging to characterize circuit-wide temperatures. Measuring gate resistance has provided the temperature of a structure one or two layers above the device active region, the region of concern and, still provides a somewhat distorted reflection of the channel temperature. So, for example, each junction/device is simulated, normally, at the same temperature as every other junction/device on the same circuit or a chip.
  • Further, device temperature may vary depending upon its immediate history. For example, a device in memory select logic may be switched on after several cycles of dormancy and so, may add little to ambient temperature. By contrast a device in a multiplexor may be switching aperiodically, making a variable contribution to ambient; an inverter in a clock buffer may be switching every cycle, cumulatively contributing to ambient and, itself being at a significantly higher temperature than ambient.
  • Consequently, because so little information is available about instantaneous thermal conditions at and for any particular device, normally, device current is modeled at one or more particular temperatures, e.g., nominal and both expected extremes. In addition, because it has been difficult, if not impossible, to characterize heat variations other than for large areas, individual device temperature and thermal time constants are not well known. However, without an accurate description of these parameters, e.g., a temperature to time relationship, it has not been possible to construct thermally accurate device models, much less monitor local circuit/device temperature during actual operation, e.g., to signal a shut down when device temperature exceeds an acceptable limit.
  • Thus, there is a need for an accurate characterization of IC structure temperatures and for a way to monitor junction and device temperatures during chip operation.
  • SUMMARY OF THE INVENTION
  • It is a purpose of the invention to improve semiconductor device models;
  • It is another purpose of the invention to accurately model device temperature in integrated circuits (ICs);
  • It is yet another purpose of the invention to accurately determine device operating temperature;
  • It is yet another purpose of the invention to monitor device temperature in real time and on the fly.
  • The present invention relates to a device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:
  • FIG. 1 shows an example of a device temperature measurement circuit as applied to a typical inverter;
  • FIG. 2 shows an example of how to determine a relaxation thermal time constant for a suitable device model;
  • FIG. 3A shows an example of a ring oscillator that includes a device temperature measurement circuit substantially as described in FIG. 1;
  • FIG. 3B shows a timing diagram for a simple example of using the circuit of FIG. 3A for measuring and monitoring chip/circuit temperature, e.g., in a microprocessor.
  • DESCRIPTION OF PREFERRED EMBODIMENTS
  • Turning now to the drawings and, more particularly, FIG. 1 shows an example of a device temperature measurement circuit 100 according to a preferred embodiment of the present invention, as applied to a typical inverter 102. In particular, a preferred embodiment device temperature measurement circuit 100 measures the temperature of the particular device itself, which may be well above ambient. Further, the present invention has application both to characterization of temperature related device characteristics and to device temperature monitoring. This particular example is described with reference to application in a typical insulated gate complementary field effect transistor (FET) circuit (inverter 102) in what is commonly referred to as CMOS; and, more particularly, with reference to silicon on insulator (SOI), wherein devices are formed in P-type and N-type semiconductor (silicon) surface islands on an insulator (oxide) layer. However, the present invention has application to characterization and modeling in any suitable technology with an isolatable, contactable body, e.g., Silicon on sapphire. Further, a preferred embodiment device temperature measurement circuit 100 can be in a separate characterization circuit or, included in an actual circuit and used for auto-sensing, e.g., where it may be advantageous to monitor a critical functional device for excessive heating.
  • In this example, the inverter 102 includes an N-type FET (NFET) 102N and a P-type FET (PFET) 102P. A clamping NFET 104 is connected to the body 106 of inverter NFET 102N. A constant current source 108, preferably in the range of 10 μA -100 nA and located on chip, is connected in parallel with the clamping NFET 104 to the body 106 of inverter NFET 102N, the device being characterized/monitored for temperature. Constant current source 108 may be, for example, an NFET current-mirror circuit. A diode 110 represents the natural PN junction between the body and the source of the NFET 102N in this example. Essentially, inverter NFET 102N heats up during use and that heat is reflected in the forward bias voltage (Vf) of diode 110. By forcing a known current through the diode 110 with NFET 102N off and measuring the voltage across the diode 110 (Vf) at various temperatures, a voltage to temperature relationship is defined for the diode. Thereafter, the junction temperature may be determined from the diode voltage at the same current. During normal operation, clamping NFET 104 is switched on, shunting the current from current source 108 and clamping the body 106 of inverter NFET 102N, more or less, to ground. Junction temperature may be monitored, periodically, by switching off both NFETs 102N, 104 and measuring junction voltage. Of course, it is understood that the present invention has application to any suitable circuit including, for example, complex logic circuits such as adders, multiplexers, repeaters, etc.
  • FIG. 2 shows an example 120 of how to determine a relaxation thermal time constant for a suitable device model according to a preferred embodiment of the present invention. First, beginning in step 122 chip junctions are calibrated, for example, using a hot-chuck or temperature chamber. Next, in step 124 the temperature of the chip, wafer, etc., is elevated or ramped with the inverter NFET 102N and clamping NFET 104 held off. In step 126, the junction voltage across the junction diode 110 is measured at multiple temperatures, e.g., by measuring voltage across the current source 108 and, correspondingly, the voltage across clamping NFET 104. After each measurement in step 128 the voltage-temperature for the junction is logged in a calibration table to very precisely relate junction temperature and voltage for that particular device. In step 130, if the maximum temperature has not been reached, calibration is still underway and returning to step 124 ramping continues. Once the maximum test temperature is reached in step 130 and calibration and resulting calibration table are complete. The clamping NFET 104 is switched on in step 132, and the hot chuck or temperature chamber is allowed to cool to room temperature.
  • The resulting voltage-temperature calibration table can be used with a preferred embodiment device temperature measurement circuit (e.g., 100) to generate a temperature based relaxation curve and determine a relaxation thermal time constant for the particular device, e.g., 102N. Essentially, the circuit (inverter 102) is operated at its highest expected capacity with the switch dormant and temperature is monitored over a selected cooling period. The relaxation thermal time constant may be used to model the device or similar devices. So, turning on the clamping NFET 104 shunts current from current source 108 and provides a ground bias to the body 106 of inverter NFET 102N. Then, in step 134 the inverter 102 is switched, e.g., at maximum operating frequency. After sufficient time for the junction to reach an expected maximum operating temperature, in step 136 the switching inverter 102 is stopped and the clamping NFET 104 is switched off. Finally, in step 138 the junction voltage measured at regular intervals using an on-chip A/D converter. The digital output of the A/D converter (not shown) can be stored or sent off chip where the measurements are logged. Thereafter, the logged voltage measurements may be converted to temperature using the voltage-temperature calibration table. The converted information may be used in the junction model for a much more precise accurate device model.
  • FIG. 3A shows an example of a simple circuit implementation 140 of a preferred embodiment device temperature measurement circuit, e.g., 100 in FIG. 1, in a ring oscillator 142. The ring oscillator 142 of this example includes 5 inverting stages 144, 146, 102, 148 and 150. One stage 144 is a NAND gate and the remaining stages 146, 102, 148 and 150 are inverters. An enable or gating signal (gate_osc) 152 is a common input to the NAND gate 144 and the gate of clamping NFET 104. The NAND gate output 154 is in phase with measurement circuit inverter output 156. The voltage (Vf) may be provided to an over-temp circuit 158 for selectively generating an alarm when an over-temperature condition is detected. Over-voltage circuit 158 may be, for example, a simple comparator for comparison against a reference voltage (Vref) or, as noted hereinabove, an A/D converter.
  • FIG. 3B shows a timing diagram for a simple example of using the circuit of FIG. 3A for measuring and monitoring chip/circuit temperature according to a preferred embodiment of the present invention, e.g., in a microprocessor. First, in period 160 with the gating signal 152 high, the clamping NFET 104 is on, shunting current from current source 108; and, NAND gate 144 inverts the output of inverter 150. So, the oscillator 142 is free running. After sufficient time for the inverter junction to heat to its steady state operating temperature, in period 162 the gating signal 152 is dropped, which turns clamping NFET off and simultaneously forces the output 154 of NAND gate 144 high, stopping the oscillator. The output 156 of inverter 102 is high and a voltage (Vf) develops across the junction at 106 in response to the current from current source 108. As noted above, the voltage (Vf) may be provided, for example to a comparator 158. The comparator may trigger an over temperature alarm (also not shown), whenever the voltage (Vf) indicates that the temperature exceeds a maximum allowed value. Thereafter, e.g., if no alarm is triggered or if the alarm does not result in halting the oscillator 100 (e.g., for cooling), in period 164 the gating signal 152 may be raised so that the oscillator resumes oscillating. The measurement may be repeated in 166 at some selected future time, e.g., periodically or upon request.
  • Advantageously, the forward voltage (Vf) of the P-N junction (and therefore its temperature) may be sensed immediately and on the fly. Thus, the temperature of the device itself (which may be well above ambient) is being individually determined and time sensitive temperature data is not lost, e.g., due to line charging delays from using an external current source or from transient settling time delays. Sensing can be either off-chip or on-chip using an analog comparator or, an A/D converter in combination with a digital compare and a scannable typical threshold value. The result is much more accurate than measuring neighboring device temperatures and trying to extrapolate temperature for the actual device of interest. Instead, application of the present invention measures the actual device temperature in the actual logic gate. Temperature can be monitored in any circuit, even on a device embedded in an IC chip mounted in a module in active operation, e.g., a microprocessor in a computer.
  • While the invention has been described in terms of preferred embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims.

Claims (13)

1. An integrated circuit (IC) comprising:
a plurality of devices connected together and forming circuits;
a switchable current source selectively providing a known current to a PN junction in at least one of said plurality of devices, said switchable current source comprising:
a constant current source, and
a clamping device selectively shunting current from said constant current source; and
a voltage measurement circuit measuring voltage across said PN junction, measured said voltage corresponding to PN junction temperature.
2. (canceled)
3. An IC as in claim 1, wherein said voltage measurement circuit comprises an analog to digital converter.
4. An IC as in claim 1, wherein said voltage measurement circuit comprises a comparator.
5. An IC as in claim 4, wherein a reference voltage is provided to said comparator for comparison against said voltage across said PN junction.
6. An IC as in claim 1, wherein said plurality of devices includes a plurality of field effect transistors (FETs) and said PN junction is a FET body to source/drain junction.
7. An IC as in claim 6, wherein said IC is on a silicon on insulator chip and said plurality of FETs comprises a plurality of P-type FETs (PFETs) and a plurality of N-type FETs (NFETs) connected together in CMOS circuits.
8. (canceled)
9. An IC as in claim 7, wherein said voltage measurement circuit comprises an analog to digital converter.
10. An IC as in claim 7, wherein said voltage measurement circuit comprises a comparator.
11. An IC as in claim 10, wherein a reference voltage is provided to said comparator for comparison against said voltage across said PN junction.
12-31. (canceled)
32. An integrated circuit (IC) comprising:
a plurality of devices connected together and forming circuits;
a switchable current source selectively providing a known current to a PN junction in at least one of said plurality of devices, said switchable current source comprising:
a constant current source, and
a clamping device in parallel with said constant current source and selectively shunting current from said constant current source through said clamping device; and
a voltage measurement circuit measuring voltage across said PN junction, measured said voltage corresponding to PN junction temperature.
US11/867,338 2004-04-14 2007-10-04 On chip temperature measuring and monitoring circuit and method Abandoned US20080025371A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/824,297 US7255476B2 (en) 2004-04-14 2004-04-14 On chip temperature measuring and monitoring circuit and method
US11/747,620 US7452128B2 (en) 2004-04-14 2007-05-11 On chip temperature measuring and monitoring circuit and method
US11/867,338 US20080025371A1 (en) 2004-04-14 2007-10-04 On chip temperature measuring and monitoring circuit and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/867,338 US20080025371A1 (en) 2004-04-14 2007-10-04 On chip temperature measuring and monitoring circuit and method
US12/061,692 US7762721B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/061,696 US7645071B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/177,311 US7780347B2 (en) 2004-04-14 2008-07-22 On chip temperature measuring and monitoring circuit and method

Related Parent Applications (4)

Application Number Title Priority Date Filing Date
US10/824,297 Division US7255476B2 (en) 2004-04-14 2004-04-14 On chip temperature measuring and monitoring circuit and method
US11/747,620 Continuation US7452128B2 (en) 2004-04-14 2007-05-11 On chip temperature measuring and monitoring circuit and method
US11/747,620 Division US7452128B2 (en) 2004-04-14 2007-05-11 On chip temperature measuring and monitoring circuit and method
US12/061,692 Division US7762721B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/824,297 Division US7255476B2 (en) 2004-04-14 2004-04-14 On chip temperature measuring and monitoring circuit and method
US12/061,692 Division US7762721B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method

Publications (1)

Publication Number Publication Date
US20080025371A1 true US20080025371A1 (en) 2008-01-31

Family

ID=35096249

Family Applications (6)

Application Number Title Priority Date Filing Date
US10/824,297 Expired - Fee Related US7255476B2 (en) 2004-04-14 2004-04-14 On chip temperature measuring and monitoring circuit and method
US11/747,620 Active US7452128B2 (en) 2004-04-14 2007-05-11 On chip temperature measuring and monitoring circuit and method
US11/867,338 Abandoned US20080025371A1 (en) 2004-04-14 2007-10-04 On chip temperature measuring and monitoring circuit and method
US12/061,696 Expired - Fee Related US7645071B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/061,692 Expired - Fee Related US7762721B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/177,311 Expired - Fee Related US7780347B2 (en) 2004-04-14 2008-07-22 On chip temperature measuring and monitoring circuit and method

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US10/824,297 Expired - Fee Related US7255476B2 (en) 2004-04-14 2004-04-14 On chip temperature measuring and monitoring circuit and method
US11/747,620 Active US7452128B2 (en) 2004-04-14 2007-05-11 On chip temperature measuring and monitoring circuit and method

Family Applications After (3)

Application Number Title Priority Date Filing Date
US12/061,696 Expired - Fee Related US7645071B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/061,692 Expired - Fee Related US7762721B2 (en) 2004-04-14 2008-04-03 On chip temperature measuring and monitoring method
US12/177,311 Expired - Fee Related US7780347B2 (en) 2004-04-14 2008-07-22 On chip temperature measuring and monitoring circuit and method

Country Status (1)

Country Link
US (6) US7255476B2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255476B2 (en) * 2004-04-14 2007-08-14 International Business Machines Corporation On chip temperature measuring and monitoring circuit and method
US7406397B2 (en) * 2004-09-02 2008-07-29 International Business Machines Corporation Self heating monitor for SiGe and SOI CMOS devices
FR2879008A1 (en) * 2004-12-06 2006-06-09 St Microelectronics Sa Automatic adaptation of the power supply voltage of an electroluminescent screen in accordance with the desired luminance
US7357571B2 (en) * 2005-07-01 2008-04-15 Predictive Service, Llc Infrared inspection and reporting process
US7904695B2 (en) * 2006-02-16 2011-03-08 Vns Portfolio Llc Asynchronous power saving computer
US7966481B2 (en) 2006-02-16 2011-06-21 Vns Portfolio Llc Computer system and method for executing port communications without interrupting the receiving computer
US7904615B2 (en) 2006-02-16 2011-03-08 Vns Portfolio Llc Asynchronous computer communication
US7835129B2 (en) * 2006-03-29 2010-11-16 Infineon Technologies Ag Circuit arrangement for overtemperature detection
US7693678B2 (en) * 2006-07-27 2010-04-06 International Business Machines Corporation Integrated circuit temperature measurement methods and apparatuses
TWI310456B (en) * 2006-12-06 2009-06-01 Via Tech Inc Digital temperature detecting system and detecting method
JP4818971B2 (en) * 2007-03-29 2011-11-16 三菱電機株式会社 Temperature detection circuit
JP4960807B2 (en) * 2007-08-28 2012-06-27 セイコーインスツル株式会社 Variable frequency oscillation circuit
WO2009035677A1 (en) * 2007-09-12 2009-03-19 International Rectifier Corporation Switched mode power converter with over temperature detection
US7708460B1 (en) * 2007-09-28 2010-05-04 Altera Corporation Method and apparatus for measuring temperature on a silicon device
TWI355484B (en) * 2007-12-14 2012-01-01 Ind Tech Res Inst Apparatus and method for measuring character and c
TWI404923B (en) * 2008-07-07 2013-08-11 Ind Tech Res Inst Standard Test Method for PN Joint Temperature of Light Emitting Diodes
CN101847112A (en) * 2009-03-24 2010-09-29 鸿富锦精密工业(深圳)有限公司 Test device of computer main board
CN101915624B (en) * 2010-05-06 2012-07-25 北京大学 Heat characterization method and structure for monitoring temperature of transistor in real time
US9075585B2 (en) 2010-08-06 2015-07-07 International Business Machines Corporation Initializing components of an integrated circuit
JP6205142B2 (en) * 2013-03-08 2017-09-27 エスアイアイ・セミコンダクタ株式会社 Constant voltage circuit
CN103162852B (en) * 2013-03-20 2014-08-06 上海理工大学 Method for detecting junction temperature of alternating current light emitting diode based on threshold voltage
CN105122451B (en) * 2013-04-05 2017-12-12 富士电机株式会社 The driving method of semiconductor device
US9664571B2 (en) 2013-12-27 2017-05-30 Microchip Technology Incorporated Digital temperature sensor with integrated timer and burst mode
US10018515B2 (en) * 2015-09-16 2018-07-10 Qualcomm Incorporated Transistor temperature sensing
CN105405843B (en) * 2015-12-16 2018-04-13 无锡中感微电子股份有限公司 Electrostatic discharge protective circuit
CN106023890B (en) * 2016-07-25 2018-06-01 京东方科技集团股份有限公司 Temperature sensing circuit and method, temperature compensation means and method and display device
DE102017205625A1 (en) * 2017-04-03 2018-10-04 Bayerische Motoren Werke Aktiengesellschaft Method and electronic assembly for determining a temperature of at least one electronic switching element

Citations (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582718A (en) * 1969-04-18 1971-06-01 Cutler Hammer Inc Circuit for improving relay performance with current limiting
US3691426A (en) * 1971-10-26 1972-09-12 Teledyne Inc Current limiter responsive to current flow and temperature rise
US3742262A (en) * 1970-09-18 1973-06-26 Matsushita Electric Ind Co Ltd Transistor detecting circuit
US3796943A (en) * 1973-01-02 1974-03-12 Nat Semiconductor Corp Current limiting circuit
US3803471A (en) * 1972-12-22 1974-04-09 Allis Chalmers Variable time ratio control having power switch which does not require current equalizing means
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor
US4395139A (en) * 1980-03-14 1983-07-26 Kabushiki Kaisha Daini Seikosha Temperature detecting device
US4672175A (en) * 1985-06-10 1987-06-09 Hy-Tek Systems, Inc. Arc starter for welder
US4768170A (en) * 1986-06-06 1988-08-30 Intel Corporation MOS temperature sensing circuit
US5087831A (en) * 1990-03-30 1992-02-11 Texas Instruments Incorporated Voltage as a function of temperature stabilization circuit and method of operation
US5196827A (en) * 1991-05-13 1993-03-23 Allen William J Alarm apparatus for handgun security
US5270591A (en) * 1992-02-28 1993-12-14 Xerox Corporation Content addressable memory architecture and circuits
US5278461A (en) * 1992-01-24 1994-01-11 Texas Instruments Incorporated Integrated transistor circuit
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US5748429A (en) * 1996-09-09 1998-05-05 Honeywell Inc. Self checking temperature sensing circuit
US5781075A (en) * 1996-11-01 1998-07-14 Motorola, Inc. Temperature sensing apparatus
US5973382A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
US5982221A (en) * 1997-08-13 1999-11-09 Analog Devices, Inc. Switched current temperature sensor circuit with compounded ΔVBE
US5993060A (en) * 1997-01-14 1999-11-30 Citizen Watch Co., Ltd. Temperature sensor and method of adjusting the same
US6005434A (en) * 1995-03-31 1999-12-21 Mitsubishi Denki Kabushiki Kaisha Substrate potential generation circuit that can suppress variation of output voltage with respect to change in external power supply voltage and environment temperature
US6008685A (en) * 1998-03-25 1999-12-28 Mosaic Design Labs, Inc. Solid state temperature measurement
US6019508A (en) * 1997-06-02 2000-02-01 Motorola, Inc. Integrated temperature sensor
US6049244A (en) * 1997-12-18 2000-04-11 Sgs-Thomson Microelectronics S.R.L. Circuit generator of a constant electric signal which is independent from temperature and manufacturing process variables
US6166584A (en) * 1997-06-20 2000-12-26 Intel Corporation Forward biased MOS circuits
US6225851B1 (en) * 1999-04-21 2001-05-01 Em Microelectronic-Marin Sa Temperature level detection circuit
US6255891B1 (en) * 1998-08-27 2001-07-03 Canon Kabushiki Kaisha Temperature detecting circuit, temperature detecting method and photo-electric conversion apparatus
US6332710B1 (en) * 2000-07-24 2001-12-25 National Semiconductor Corporation Multi-channel remote diode temperature sensor
US6363490B1 (en) * 1999-03-30 2002-03-26 Intel Corporation Method and apparatus for monitoring the temperature of a processor
US6396249B1 (en) * 1999-09-30 2002-05-28 Denso Corporation Load actuation circuit
US6441679B1 (en) * 2000-02-14 2002-08-27 Yazaki Corporation Semiconductor active fuse operating at higher supply voltage employing current oscillation
US6489831B1 (en) * 1999-08-31 2002-12-03 Stmicroelectronics S.R.L. CMOS temperature sensor
US6496056B1 (en) * 1999-03-08 2002-12-17 Agere Systems Inc. Process-tolerant integrated circuit design
US20030025514A1 (en) * 2001-07-26 2003-02-06 Benes Michael J. Multiple range current measurement system with low power dissipation, fast settling time, and low common mode voltage error
US6552886B1 (en) * 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US20030076158A1 (en) * 2001-10-24 2003-04-24 Reghu Rajan Low power wide swing current mirror
US6554469B1 (en) * 2001-04-17 2003-04-29 Analog Devices, Inc. Four current transistor temperature sensor and method
US20030086476A1 (en) * 2001-11-08 2003-05-08 Masaru Mizuta Temperature sensor circuit having trimming function
US6567763B1 (en) * 1999-12-30 2003-05-20 Intel Corporation Analog temperature measurement apparatus and method
US6612738B2 (en) * 2000-03-08 2003-09-02 Infineon Technologies Method for determining the temperature of a semiconductor chip and semiconductor chip with temperature measuring configuration
US6635934B2 (en) * 2000-06-05 2003-10-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device operating with low power consumption
US6679628B2 (en) * 2001-08-14 2004-01-20 Schneider Automation Inc. Solid state temperature measuring device and method
US6737848B2 (en) * 2001-11-15 2004-05-18 Texas Instruments Incorporated Reference voltage source
US6736540B1 (en) * 2003-02-26 2004-05-18 National Semiconductor Corporation Method for synchronized delta-VBE measurement for calculating die temperature
US6774653B2 (en) * 2001-08-22 2004-08-10 Sun Microsystems, Inc. Two-pin thermal sensor calibration interface
US6794921B2 (en) * 2002-07-11 2004-09-21 Denso Corporation Clamp circuit
US6870357B1 (en) * 2002-11-21 2005-03-22 National Semiconductor Corporation Method and apparatus for determining the temperature of a junction using voltage responses of the junction and a correction factor
US6890097B2 (en) * 2002-10-09 2005-05-10 Nec Electronics Corporation Temperature measuring sensor incorporated in semiconductor substrate, and semiconductor device containing such temperature measuring sensor
US6914470B2 (en) * 2002-09-30 2005-07-05 Hiroshi Watanabe Level shifting circuit
US20050220171A1 (en) * 2004-04-02 2005-10-06 Faour Fouad A Temperature measurement of an integrated circuit
US6957910B1 (en) * 2004-01-05 2005-10-25 National Semiconductor Corporation Synchronized delta-VBE measurement system
US6977849B2 (en) * 2001-12-05 2005-12-20 Renesas Technology Corp. Semiconductor device suitable for system in package
US7052180B2 (en) * 2002-01-04 2006-05-30 Kelvin Shih LED junction temperature tester
US7228508B1 (en) * 1993-09-21 2007-06-05 Intel Corporation Fail-safe thermal sensor apparatus and method

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2742786A (en) * 1952-12-05 1956-04-24 Gen Electric Electrical temperature responsive system
NL301034A (en) * 1962-11-27
US3812717A (en) * 1972-04-03 1974-05-28 Bell Telephone Labor Inc Semiconductor diode thermometry
US4027177A (en) * 1975-03-05 1977-05-31 Motorola, Inc. Clamping circuit
US4039928A (en) * 1976-07-19 1977-08-02 Pertron Controls Corporation Electrical operating circuit having semiconductor device junction temperature monitoring
DE3417211A1 (en) * 1984-05-10 1985-11-14 Bosch Gmbh Robert Temperature sensor
GB2224846A (en) * 1988-11-14 1990-05-16 Philips Electronic Associated Temperature sensing circuit
US5070322A (en) * 1989-07-19 1991-12-03 Fuji Electric Co., Ltd. An overheating detection circuit including a reversely biased junction having a temperature dependent reverse leakage current for detecting overheating of a power integrated circuit
US5355123A (en) * 1990-07-17 1994-10-11 Fuji Electric Co., Ltd. Overheating detection circuit for detecting overheating of a power device
GB2248738A (en) * 1990-10-08 1992-04-15 Philips Electronic Associated A temperature responsive circuit
US5396120A (en) * 1991-04-10 1995-03-07 Nippon Steel Corporation Semiconductor integrated unit
US5357089A (en) * 1993-02-26 1994-10-18 Harris Corporation Circuit and method for extending the safe operating area of a BJT
US5418450A (en) * 1993-05-03 1995-05-23 John Fluke Mfg. Co., Inc. Coupling circuit for a measuring instrument
US5546041A (en) * 1993-08-05 1996-08-13 Massachusetts Institute Of Technology Feedback sensor circuit
US5453682A (en) * 1994-01-27 1995-09-26 Newport Electronics, Inc. Wide-range thermistor meter
FR2724069B1 (en) * 1994-08-31 1997-01-03 Sgs Thomson Microelectronics Temperature sensor on integrated circuit
US5602860A (en) * 1995-04-19 1997-02-11 Optelecom, Inc. Laser thermal control using thermoelectric cooler
JP3780030B2 (en) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ Oscillation circuit and DRAM
JPH09119870A (en) * 1995-10-26 1997-05-06 Nec Corp Temperature detection method, semiconductor device and temperature detection circuit
JP3358459B2 (en) * 1996-09-12 2002-12-16 株式会社デンソー Temperature detection circuit
SE512796C2 (en) * 1998-09-18 2000-05-15 Ericsson Telefon Ab L M Method and apparatus for measuring the temperature in a semiconductor component
JP3319406B2 (en) * 1998-09-18 2002-09-03 日本電気株式会社 Comparison amplification detection circuit
US6249173B1 (en) * 1998-09-22 2001-06-19 Ando Electric Co., Ltd. Temperature stabilizing circuit
SE516012C2 (en) * 1999-01-25 2001-11-05 Ericsson Telefon Ab L M Styreförspänningsanordning
US6789037B2 (en) * 1999-03-30 2004-09-07 Intel Corporation Methods and apparatus for thermal management of an integrated circuit die
US6233190B1 (en) * 1999-08-30 2001-05-15 Micron Technology, Inc. Method of storing a temperature threshold in an integrated circuit, method of modifying operation of dynamic random access memory in response to temperature, programmable temperature sensing circuit and memory integrated circuit
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
DE10132452B4 (en) * 2001-07-04 2005-07-28 Robert Bosch Gmbh Apparatus and method for measuring operating temperatures of an electrical component
JP4363871B2 (en) * 2003-03-19 2009-11-11 Okiセミコンダクタ株式会社 Semiconductor device
JP3869815B2 (en) * 2003-03-31 2007-01-17 Necエレクトロニクス株式会社 Semiconductor integrated circuit device
US7030793B2 (en) * 2004-02-18 2006-04-18 Standard Microsystems Corporation Accurate testing of temperature measurement unit
JP4541742B2 (en) * 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 Integrated circuit device
JP4536408B2 (en) * 2004-03-30 2010-09-01 ルネサスエレクトロニクス株式会社 Integrated circuit device
US7255476B2 (en) * 2004-04-14 2007-08-14 International Business Machines Corporation On chip temperature measuring and monitoring circuit and method
DE102004020274A1 (en) * 2004-04-26 2005-11-17 Siemens Ag Method and device for protecting an electronic component
US7310048B2 (en) * 2005-05-04 2007-12-18 Power Integrations, Inc. Method and apparatus for sensing a current in a circuit
JP4981267B2 (en) * 2005-05-11 2012-07-18 ルネサスエレクトロニクス株式会社 Overheat detection circuit
TWI374594B (en) * 2008-02-01 2012-10-11 Holtek Semiconductor Inc

Patent Citations (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582718A (en) * 1969-04-18 1971-06-01 Cutler Hammer Inc Circuit for improving relay performance with current limiting
US3742262A (en) * 1970-09-18 1973-06-26 Matsushita Electric Ind Co Ltd Transistor detecting circuit
US3691426A (en) * 1971-10-26 1972-09-12 Teledyne Inc Current limiter responsive to current flow and temperature rise
US3803471A (en) * 1972-12-22 1974-04-09 Allis Chalmers Variable time ratio control having power switch which does not require current equalizing means
US3796943A (en) * 1973-01-02 1974-03-12 Nat Semiconductor Corp Current limiting circuit
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor
US4395139A (en) * 1980-03-14 1983-07-26 Kabushiki Kaisha Daini Seikosha Temperature detecting device
US4672175A (en) * 1985-06-10 1987-06-09 Hy-Tek Systems, Inc. Arc starter for welder
US4768170A (en) * 1986-06-06 1988-08-30 Intel Corporation MOS temperature sensing circuit
US5087831A (en) * 1990-03-30 1992-02-11 Texas Instruments Incorporated Voltage as a function of temperature stabilization circuit and method of operation
US5196827A (en) * 1991-05-13 1993-03-23 Allen William J Alarm apparatus for handgun security
US5278461A (en) * 1992-01-24 1994-01-11 Texas Instruments Incorporated Integrated transistor circuit
US5270591A (en) * 1992-02-28 1993-12-14 Xerox Corporation Content addressable memory architecture and circuits
US5973382A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corporation Capacitor on ultrathin semiconductor on insulator
US7228508B1 (en) * 1993-09-21 2007-06-05 Intel Corporation Fail-safe thermal sensor apparatus and method
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US6005434A (en) * 1995-03-31 1999-12-21 Mitsubishi Denki Kabushiki Kaisha Substrate potential generation circuit that can suppress variation of output voltage with respect to change in external power supply voltage and environment temperature
US5748429A (en) * 1996-09-09 1998-05-05 Honeywell Inc. Self checking temperature sensing circuit
US5781075A (en) * 1996-11-01 1998-07-14 Motorola, Inc. Temperature sensing apparatus
US5993060A (en) * 1997-01-14 1999-11-30 Citizen Watch Co., Ltd. Temperature sensor and method of adjusting the same
US6019508A (en) * 1997-06-02 2000-02-01 Motorola, Inc. Integrated temperature sensor
US6166584A (en) * 1997-06-20 2000-12-26 Intel Corporation Forward biased MOS circuits
US5982221A (en) * 1997-08-13 1999-11-09 Analog Devices, Inc. Switched current temperature sensor circuit with compounded ΔVBE
US6049244A (en) * 1997-12-18 2000-04-11 Sgs-Thomson Microelectronics S.R.L. Circuit generator of a constant electric signal which is independent from temperature and manufacturing process variables
US6008685A (en) * 1998-03-25 1999-12-28 Mosaic Design Labs, Inc. Solid state temperature measurement
US6255891B1 (en) * 1998-08-27 2001-07-03 Canon Kabushiki Kaisha Temperature detecting circuit, temperature detecting method and photo-electric conversion apparatus
US6496056B1 (en) * 1999-03-08 2002-12-17 Agere Systems Inc. Process-tolerant integrated circuit design
US6363490B1 (en) * 1999-03-30 2002-03-26 Intel Corporation Method and apparatus for monitoring the temperature of a processor
US6225851B1 (en) * 1999-04-21 2001-05-01 Em Microelectronic-Marin Sa Temperature level detection circuit
US6489831B1 (en) * 1999-08-31 2002-12-03 Stmicroelectronics S.R.L. CMOS temperature sensor
US6396249B1 (en) * 1999-09-30 2002-05-28 Denso Corporation Load actuation circuit
US6567763B1 (en) * 1999-12-30 2003-05-20 Intel Corporation Analog temperature measurement apparatus and method
US6441679B1 (en) * 2000-02-14 2002-08-27 Yazaki Corporation Semiconductor active fuse operating at higher supply voltage employing current oscillation
US6612738B2 (en) * 2000-03-08 2003-09-02 Infineon Technologies Method for determining the temperature of a semiconductor chip and semiconductor chip with temperature measuring configuration
US6635934B2 (en) * 2000-06-05 2003-10-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device operating with low power consumption
US6552886B1 (en) * 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US6332710B1 (en) * 2000-07-24 2001-12-25 National Semiconductor Corporation Multi-channel remote diode temperature sensor
US6554469B1 (en) * 2001-04-17 2003-04-29 Analog Devices, Inc. Four current transistor temperature sensor and method
US20030025514A1 (en) * 2001-07-26 2003-02-06 Benes Michael J. Multiple range current measurement system with low power dissipation, fast settling time, and low common mode voltage error
US6679628B2 (en) * 2001-08-14 2004-01-20 Schneider Automation Inc. Solid state temperature measuring device and method
US20040062293A1 (en) * 2001-08-14 2004-04-01 Breinlinger Richard H. Solid state temperature measuring device and method
US6774653B2 (en) * 2001-08-22 2004-08-10 Sun Microsystems, Inc. Two-pin thermal sensor calibration interface
US20030076158A1 (en) * 2001-10-24 2003-04-24 Reghu Rajan Low power wide swing current mirror
US20030086476A1 (en) * 2001-11-08 2003-05-08 Masaru Mizuta Temperature sensor circuit having trimming function
US6674185B2 (en) * 2001-11-08 2004-01-06 Kabushiki Kaisha Toshiba Temperature sensor circuit having trimming function
US6737848B2 (en) * 2001-11-15 2004-05-18 Texas Instruments Incorporated Reference voltage source
US6977849B2 (en) * 2001-12-05 2005-12-20 Renesas Technology Corp. Semiconductor device suitable for system in package
US7052180B2 (en) * 2002-01-04 2006-05-30 Kelvin Shih LED junction temperature tester
US6794921B2 (en) * 2002-07-11 2004-09-21 Denso Corporation Clamp circuit
US6914470B2 (en) * 2002-09-30 2005-07-05 Hiroshi Watanabe Level shifting circuit
US6890097B2 (en) * 2002-10-09 2005-05-10 Nec Electronics Corporation Temperature measuring sensor incorporated in semiconductor substrate, and semiconductor device containing such temperature measuring sensor
US6870357B1 (en) * 2002-11-21 2005-03-22 National Semiconductor Corporation Method and apparatus for determining the temperature of a junction using voltage responses of the junction and a correction factor
US6736540B1 (en) * 2003-02-26 2004-05-18 National Semiconductor Corporation Method for synchronized delta-VBE measurement for calculating die temperature
US6957910B1 (en) * 2004-01-05 2005-10-25 National Semiconductor Corporation Synchronized delta-VBE measurement system
US20050220171A1 (en) * 2004-04-02 2005-10-06 Faour Fouad A Temperature measurement of an integrated circuit

Also Published As

Publication number Publication date
US20080291970A1 (en) 2008-11-27
US20070206656A1 (en) 2007-09-06
US7452128B2 (en) 2008-11-18
US7762721B2 (en) 2010-07-27
US20080186035A1 (en) 2008-08-07
US20050232333A1 (en) 2005-10-20
US7780347B2 (en) 2010-08-24
US7255476B2 (en) 2007-08-14
US7645071B2 (en) 2010-01-12
US20080187024A1 (en) 2008-08-07

Similar Documents

Publication Publication Date Title
US9671294B2 (en) Semiconductor device including a temperature sensor circuit
US8451048B2 (en) Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device
Cao et al. Characterization of lead-free solder and sintered nano-silver die-attach layers using thermal impedance
US7268575B1 (en) Method of NBTI prediction
JP4768710B2 (en) System and method for reducing temperature variations during burn-in
US5961215A (en) Temperature sensor integral with microprocessor and methods of using same
KR100652422B1 (en) On-chip thermometer, temperature detection method and refresh control method using the same
US7212022B2 (en) System and method for measuring time dependent dielectric breakdown with a ring oscillator
US5864176A (en) Electro-mechnical subassembly having a greatly reduced thermal resistance between two mating faces by including a film of liquid, that evaporates without leaving any residue, between the faces
US7190233B2 (en) Methods and apparatus for measuring change in performance of ring oscillator circuit
US7315178B1 (en) System and method for measuring negative bias thermal instability with a ring oscillator
BE1008808A3 (en) Device and method for evaluating the thermal resistance of a semiconductor component.
US7069525B2 (en) Method and apparatus for determining characteristics of MOS devices
Ammous et al. Transient temperature measurements and modeling of IGBT's under short circuit
US7005871B1 (en) Apparatus, system, and method for managing aging of an integrated circuit
KR101357368B1 (en) Circuit arrangement with a plurality of on-chip monitor circuits and a control circuit and corresponding methods
US7427158B2 (en) Advanced thermal sensor
US7339390B2 (en) Systems and methods for controlling of electro-migration
US6786639B2 (en) Device for sensing temperature of an electronic chip
US20050212543A1 (en) System and method for measuring negative bias thermal instability with a ring oscillator
US6456104B1 (en) Method and structure for in-line monitoring of negative bias temperature instability in field effect transistors
CN100504321C (en) Systems and methods for thermal sensing
CN102859373B (en) Circuit that semi-conductor chip is tested is made it possible to for control temperature
CN103792476B (en) Thermo-resistance measurement method for semiconductor device
US8928394B2 (en) Semiconductor integrated circuit and an operating method thereof, a timing verifying method for a semiconductor integrated circuit and a test method of a semiconductor integrated circuit

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FRANCH, ROBERT L.;JENKINS, KEITH A.;REEL/FRAME:019922/0439

Effective date: 20040413

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION