JP2013500582A - エンハンスメント型窒化ガリウム高電子移動度トランジスタ - Google Patents
エンハンスメント型窒化ガリウム高電子移動度トランジスタ Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 230000014509 gene expression Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
【選択図】図4
Description
(関連出願)
Claims (20)
- アルミニウムを含む第1バリア層と、
前記第1バリア層上の窒化ガリウムチャネル層と、
前記窒化ガリウムチャネル層上に存在し、第1サブレイヤーと第2サブレイヤーと第3サブレイヤーとを備え、前記第1サブレイヤーと第3サブレイヤーは各々アルミニウムを含む第2バリア層と、
を備えることを特徴とする装置。 - 前記第2サブレイヤーの電界は、前記第1サブレイヤーの電界および前記第3サブレイヤーの電界に対して反転していることを特徴とする請求項1に記載の装置。
- 前記第1バリア層はアルミニウム窒化ガリウムを含み、前記第1サブレイヤーおよび第3サブレイヤーは各々アルミニウム窒化ガリウムを含み、前記第2サブレイヤーは窒化ガリウムを含む、ことを特徴とする請求項1に記載の装置。
- さらに基板を備え、前記第1バリア層は前記基板上に存在し、前記基板は、炭化ケイ素、窒化ガリウム、窒化アルミニウムまたはシリコンを含むことを特徴とする請求項1に記載の装置。
- 前記第3サブレイヤー内に埋め込まれたゲート電極をさらに備えることを特徴とする請求項1に記載の装置。
- 前記ゲート電極はT−ゲートであることを特徴とする請求項5に記載の装置。
- 前記ゲート電極はフッ素表面処理を含むことを特徴とする請求項5に記載の装置。
- 前記ゲート電極、第1バリア層、窒化ガリウムチャネル層および第2バリア層は、エンハンスメント型トランジスタを形成することを特徴とする請求項5に記載の装置。
- 前記ゲート電極は第1ゲート電極を備え、前記装置は、前記第2バリア層上に設けられた第2ゲート電極をさらに備え、前記第2ゲート電極、第1バリア層、窒化ガリウムチャネル層および第2バリア層は、デプレッション型トランジスタを形成することを特徴とする請求項8に記載の装置。
- 前記ゲート電極と前記第2サブレイヤー間に絶縁層をさらに備えることを特徴とする請求項5に記載の装置。
- 前記第1サブレイヤーは前記窒化ガリウムチャネル層上に存在し、前記HEMTはさらに、前記第2サブレイヤーと第3サブレイヤー間にエッチストップ層を備えることを特徴とする請求項1に記載の装置。
- 無線周波数(RF)入力信号を受信するトランシーバと、
前記トランシーバに接続され、前記RF入力信号をデジタル入力信号に変換するアナログ−デジタル変換器(ADC)と、
を備えるシステムであって、前記ADCは、アルミニウムを含む第1バリア層と、前記第1バリア層上の窒化ガリウムチャネル層と、前記窒化ガリウムチャネル層上に存在し、第1サブレイヤーと第2サブレイヤーと第3サブレイヤーとを備え、前記第1サブレイヤーと第3サブレイヤーは各々アルミニウムを含む第2バリア層と、前記第3サブレイヤー内に埋め込まれたゲート電極と、を有するエンハンスメント型高電子移動度トランジスタ(HEMT)を備えることを特徴とするシステム。 - 前記トランシーバに接続され、前記RF入力信号を受信しやすいように構成されたアンテナ構造をさらに備えることを特徴とする請求項12に記載のシステム。
- 前記システムは、レーダ装置、衛星通信装置、携帯電話、基地局、放送ラジオあるいはTV増幅器システムであることを特徴とする請求項12に記載のシステム。
- アルミニウムを含む第1バリア層を形成するステップと、
前記第1バリア層上に窒化ガリウムチャネル層を形成するステップと、
前記窒化ガリウムチャネル層上に第2バリア層を形成するステップであって、前記第2バリア層は、第1サブレイヤーと第2サブレイヤーと第3サブレイヤーとを備え、前記第1サブレイヤーと第3サブレイヤーは各々アルミニウムを含むステップと、
を備えることを特徴とする方法。 - 前記第1バリア層は、アルミニウム窒化ガリウムを含むことを特徴とする請求項15に記載の方法。
- 前記第1サブレイヤーはアルミニウム窒化ガリウムを含み、前記第2サブレイヤーは窒化ガリウムを含み、前記第3サブレイヤーはアルミニウム窒化ガリウムを含むことを特徴とする請求項15に記載の方法。
- 前記第3バリア層内に埋め込まれた第1ゲート電極を形成するステップをさらに備えることを特徴とする請求項15に記載の方法。
- 前記第2バリア層上に第2ゲート電極を形成するステップをさらに備えることを特徴とする請求項18に記載の方法。
- 前記第2サブレイヤーと第3サブレイヤー間にエッチストップ層を形成するステップをさらに備え、ゲート電極を形成する前記ステップは、前記第3サブレイヤー内を前記エッチストップ層まで埋め込まれたゲート電極を形成するステップを備えることを特徴とする請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/509,144 US8344420B1 (en) | 2009-07-24 | 2009-07-24 | Enhancement-mode gallium nitride high electron mobility transistor |
US12/509,144 | 2009-07-24 | ||
PCT/US2010/042151 WO2011011261A2 (en) | 2009-07-24 | 2010-07-15 | Enhancement-mode gallium nitride high electron mobility transistor |
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Publication Number | Publication Date |
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JP2013500582A true JP2013500582A (ja) | 2013-01-07 |
JP2013500582A5 JP2013500582A5 (ja) | 2013-05-16 |
JP5658753B2 JP5658753B2 (ja) | 2015-01-28 |
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JP2012521685A Active JP5658753B2 (ja) | 2009-07-24 | 2010-07-15 | エンハンスメント型窒化ガリウム高電子移動度トランジスタ |
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US (1) | US8344420B1 (ja) |
JP (1) | JP5658753B2 (ja) |
WO (1) | WO2011011261A2 (ja) |
Cited By (3)
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