JP2013201407A - 液体噴射ヘッド、液体噴射装置並びに圧電素子及びその製造方法 - Google Patents
液体噴射ヘッド、液体噴射装置並びに圧電素子及びその製造方法 Download PDFInfo
- Publication number
- JP2013201407A JP2013201407A JP2012070455A JP2012070455A JP2013201407A JP 2013201407 A JP2013201407 A JP 2013201407A JP 2012070455 A JP2012070455 A JP 2012070455A JP 2012070455 A JP2012070455 A JP 2012070455A JP 2013201407 A JP2013201407 A JP 2013201407A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bismuth
- buffer layer
- electrode
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000002347 injection Methods 0.000 title abstract 5
- 239000007924 injection Substances 0.000 title abstract 5
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 102
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000000872 buffer Substances 0.000 claims abstract description 95
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052742 iron Inorganic materials 0.000 claims abstract description 59
- 239000002131 composite material Substances 0.000 claims abstract description 47
- 239000010936 titanium Substances 0.000 claims abstract description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- 229910052788 barium Inorganic materials 0.000 claims abstract description 28
- 239000011701 zinc Substances 0.000 claims abstract description 26
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 16
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 abstract description 37
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 178
- 239000010408 film Substances 0.000 description 63
- 239000000758 substrate Substances 0.000 description 56
- 239000002243 precursor Substances 0.000 description 45
- 150000004696 coordination complex Chemical class 0.000 description 25
- 239000000463 material Substances 0.000 description 25
- 239000011572 manganese Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 21
- 238000005238 degreasing Methods 0.000 description 19
- 229910052748 manganese Inorganic materials 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000013078 crystal Substances 0.000 description 18
- 238000010304 firing Methods 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 238000001035 drying Methods 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 15
- 239000011651 chromium Substances 0.000 description 14
- 229910002113 barium titanate Inorganic materials 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 12
- 238000004151 rapid thermal annealing Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 9
- SMSVUYQRWYTTLI-UHFFFAOYSA-L 2-ethylhexanoate;iron(2+) Chemical compound [Fe+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SMSVUYQRWYTTLI-UHFFFAOYSA-L 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 7
- NJLQUTOLTXWLBV-UHFFFAOYSA-N 2-ethylhexanoic acid titanium Chemical compound [Ti].CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O NJLQUTOLTXWLBV-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- UVPKUTPZWFHAHY-UHFFFAOYSA-L 2-ethylhexanoate;nickel(2+) Chemical compound [Ni+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O UVPKUTPZWFHAHY-UHFFFAOYSA-L 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910002115 bismuth titanate Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 2
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- YPQJHZKJHIBJAP-UHFFFAOYSA-N [K].[Bi] Chemical compound [K].[Bi] YPQJHZKJHIBJAP-UHFFFAOYSA-N 0.000 description 2
- KOJWXHDDSAMYEG-UHFFFAOYSA-N [Na].[Ba].[Bi] Chemical compound [Na].[Ba].[Bi] KOJWXHDDSAMYEG-UHFFFAOYSA-N 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 2
- IOXJQRFUAXWORF-UHFFFAOYSA-N bismuth cerium Chemical compound [Ce].[Bi] IOXJQRFUAXWORF-UHFFFAOYSA-N 0.000 description 2
- RDQSSKKUSGYZQB-UHFFFAOYSA-N bismuthanylidyneiron Chemical compound [Fe].[Bi] RDQSSKKUSGYZQB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- KTMLBHVBHVXWKQ-UHFFFAOYSA-N dibismuth dioxido(dioxo)manganese Chemical compound [Bi+3].[Bi+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O KTMLBHVBHVXWKQ-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- PVFSDGKDKFSOTB-UHFFFAOYSA-K iron(3+);triacetate Chemical compound [Fe+3].CC([O-])=O.CC([O-])=O.CC([O-])=O PVFSDGKDKFSOTB-UHFFFAOYSA-K 0.000 description 2
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- -1 organic acid salt Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- IFNXAMCERSVZCV-UHFFFAOYSA-L zinc;2-ethylhexanoate Chemical compound [Zn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O IFNXAMCERSVZCV-UHFFFAOYSA-L 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- DRJAUUZQRRDBKS-UHFFFAOYSA-L [Bi].[Cr](=O)(=O)(O)O Chemical compound [Bi].[Cr](=O)(=O)(O)O DRJAUUZQRRDBKS-UHFFFAOYSA-L 0.000 description 1
- WSSKLPBIOYSPEX-UHFFFAOYSA-N [Bi].[Na].[K] Chemical compound [Bi].[Na].[K] WSSKLPBIOYSPEX-UHFFFAOYSA-N 0.000 description 1
- NGSNIGHJUAOHIU-UHFFFAOYSA-N [Cr](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] Chemical compound [Cr](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] NGSNIGHJUAOHIU-UHFFFAOYSA-N 0.000 description 1
- PQALDGIRXNUVQR-UHFFFAOYSA-N [La].[Ce].[Bi] Chemical compound [La].[Ce].[Bi] PQALDGIRXNUVQR-UHFFFAOYSA-N 0.000 description 1
- XOQKTJRZUUIBMN-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Ba+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Ba+2].[Bi+3] XOQKTJRZUUIBMN-UHFFFAOYSA-N 0.000 description 1
- HKAASGNXFXHLHR-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] HKAASGNXFXHLHR-UHFFFAOYSA-N 0.000 description 1
- MQFUEHRJMBQBBO-UHFFFAOYSA-N [Zn].[Ba].[Bi] Chemical compound [Zn].[Ba].[Bi] MQFUEHRJMBQBBO-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- DJHZYHWLGNJISM-FDGPNNRMSA-L barium(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ba+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O DJHZYHWLGNJISM-FDGPNNRMSA-L 0.000 description 1
- CPUJSIVIXCTVEI-UHFFFAOYSA-N barium(2+);propan-2-olate Chemical compound [Ba+2].CC(C)[O-].CC(C)[O-] CPUJSIVIXCTVEI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- OQFNERKBBOJCGY-UHFFFAOYSA-N bismuth iron(2+) lanthanum(3+) manganese(2+) oxygen(2-) Chemical compound [O-2].[Mn+2].[Fe+2].[La+3].[Bi+3].[O-2].[O-2].[O-2].[O-2] OQFNERKBBOJCGY-UHFFFAOYSA-N 0.000 description 1
- DXAAWULSLNTIRF-UHFFFAOYSA-N bismuth lanthanum(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[La+3].[Bi+3] DXAAWULSLNTIRF-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- NPCUWXDZFXSRLT-UHFFFAOYSA-N chromium;2-ethylhexanoic acid Chemical compound [Cr].CCCCC(CC)C(O)=O NPCUWXDZFXSRLT-UHFFFAOYSA-N 0.000 description 1
- QAEKNCDIHIGLFI-UHFFFAOYSA-L cobalt(2+);2-ethylhexanoate Chemical compound [Co+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O QAEKNCDIHIGLFI-UHFFFAOYSA-L 0.000 description 1
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- DHMGMTYGCBZFST-UHFFFAOYSA-N dibismuth;dioxido(dioxo)chromium Chemical compound [Bi+3].[Bi+3].[O-][Cr]([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Cr]([O-])(=O)=O DHMGMTYGCBZFST-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 description 1
- 239000011254 layer-forming composition Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
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Abstract
【解決手段】圧電体層70と、圧電体層70に設けられた第1電極60及び第2電極80と、を具備する圧電素子300を備えた液体噴射ヘッドIであって、圧電体層70は、第1電極60上に設けられた、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方と、を含むペロブスカイト構造のバッファー層72と、バッファー層72上に設けられたビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層74とからなる。
【選択図】図3
Description
かかる態様では、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方とを含むペロブスカイト構造のバッファー層と、該バッファー層上に設けられたビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層との積層構造の圧電体層とすることにより、クラックの発生が抑制された圧電体層を有する液体噴射ヘッドとすることができる。また、非鉛又は鉛の含有量を抑えられるため、環境への負荷を低減することができる。
かかる態様では、環境への負荷を低減し、クラックの発生が抑制された圧電体層を有する液体噴射ヘッドを具備する液体噴射装置とすることができる。
かかる態様では、環境への負荷を低減し、クラックの発生が抑制された圧電体層を有する圧電素子とすることができる。
かかる態様では、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方とを含むペロブスカイト構造のバッファー層上に、ビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層を設けて圧電体層とすることにより、クラックの発生が抑制された圧電体層を有する圧電素子を製造するこることができる。また、非鉛又は鉛の含有量を抑えられるため、環境への負荷を低減することができる。
図1は、本発明の実施形態1に係る製造方法によって製造される液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図であり、図3(a)は図2のA−A′線断面図、図3(b)は図3(a)の要部拡大断面図である。図1〜図3に示すように、本実施形態の流路形成基板10は、シリコン単結晶基板からなり、その一方の面には二酸化シリコンからなる弾性膜50が形成されている。
(1−x)[BiFeO3]−x[BaTiO3] (1)
(0<x<0.40)
(Bi1−xBax)(Fe1−xTix)O3 (1’)
(0<x<0.40)
(1−x)[Bi(Fe1−yMy)O3]−x[BaTiO3] (2)
(0<x<0.40、0.01<y<0.10)
(Bi1−xBax)((Fe1−yMy)1−xTix)O3 (2’)
(0<x<0.40、0.01<y<0.10)
まず、(100)単結晶シリコン(Si)基板の表面に熱酸化により膜厚1200nmの酸化シリコン(SiO2)膜を形成した。次に、SiO2膜上にRFマグネトロンスパッタ法により膜厚40nmのチタン膜を作製し、熱酸化することで酸化チタン膜を形成した。次に、酸化チタン膜上にRFマグネトロンスパッタ法により、(111)面に配向し厚さ100nmの白金膜(第1電極60)を形成した。
バッファー層前駆体膜の焼成条件を、1℃/秒で650℃まで昇温し、酸素雰囲気中で、RTA装置で650℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
バッファー層前駆体膜を形成する前駆体溶液の濃度を半分にした以外は、実施例1と同様の操作を行った。
バッファー層の前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸ニッケル及び2−エチルヘキサン酸チタンのn−オクタン溶液を、モル濃度比がBi:Fe:Ni:Ti=100:93:0.35:0:35となるように混合したものを用いた以外は、実施例1と同様の操作を行った。
バッファー層前駆体膜の焼成条件を、400℃/秒で750℃まで昇温し、酸素雰囲気中で、RTA装置で750℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
バッファー層の前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸ニッケル及び2−エチルヘキサン酸チタンのn−オクタン溶液を、モル濃度比がBi:Fe:Ni=100:96:4となるように混合したものを用い、バッファー層前駆体膜の焼成条件を、400℃/秒で750℃まで昇温し、酸素雰囲気中で、RTA装置で750℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
バッファー層の前駆体溶液として、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸鉄、2−エチルヘキサン酸ニッケル及び2−エチルヘキサン酸チタンのn−オクタン溶液を、モル濃度比がBi:Fe:Ni=98:98:4となるように混合したものを用い、バッファー層前駆体膜の焼成条件を、2℃/秒で750℃まで昇温し、酸素雰囲気中で、RTA装置で750℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
バッファー層を形成せず、バッファー層の前駆体溶液の代わりに、複合酸化物層と同様の組成の前駆体溶液を用い、焼成条件を、400℃/秒で750℃まで昇温し、酸素雰囲気中で、RTA装置で750℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
バッファー層を形成せず、バッファー層の前駆体溶液の代わりに、複合酸化物層と同様の組成の前駆体溶液を用い、焼成条件を、2℃/秒で750℃まで昇温し、酸素雰囲気中で、RTA装置で750℃2分間の焼成とした以外は、実施例1と同様の操作を行った。
実施例1〜7及び比較例1〜2において、第2電極80を形成していない状態の圧電体層70について、形成直後の表面を、金属顕微鏡により100倍にて観察した。この結果を図9〜図13に示す。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、上述した実施形態では、流路形成基板10として、シリコン単結晶基板を例示したが、特にこれに限定されず、例えば、SOI基板、ガラス等の材料を用いるようにしてもよい。
Claims (5)
- 圧電体層と、前記圧電体層に設けられた第1電極及び第2電極と、を具備する圧電素子を備えた液体噴射ヘッドであって、
前記圧電体層は、
前記第1電極上に設けられた、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方と、を含むペロブスカイト構造のバッファー層と、
該バッファー層上に設けられたビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層とからなることを特徴とする液体噴射ヘッド。 - 前記バッファー層は、さらにチタンを含むことを特徴とする請求項1に記載する液体噴射ヘッド。
- 請求項1又は2に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、前記圧電体層に設けられた第1電極及び第2電極とを備えた圧電素子であって、
前記圧電体層は、
前記第1電極上に設けられた、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方と、を含むペロブスカイト構造のバッファー層と、
該バッファー層上に設けられたビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層とからなることを特徴とする圧電素子。 - 圧電体層と、前記圧電体層に設けられた第1電極及び第2電極とを備えた圧電素子の製造方法において、
前記第1電極上に、ビスマスと、鉄と、亜鉛及びニッケルの少なくとも一方とを含むペロブスカイト構造のバッファー層を形成する工程と、
前記バッファー層上に、ビスマス、鉄、バリウム及びチタンを含むペロブスカイト構造の複合酸化物層を形成する工程と、
を具備することを特徴とする圧電素子の製造方法。
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US13/848,465 US8820894B2 (en) | 2012-03-26 | 2013-03-21 | Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and method for manufacturing the same |
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JP2015154037A (ja) * | 2014-02-19 | 2015-08-24 | セイコーエプソン株式会社 | 圧電アクチュエーター、液体噴射ヘッド、及び圧電アクチュエーターの製造方法 |
US10297742B2 (en) | 2016-11-16 | 2019-05-21 | Seiko Epson Corporation | Piezoelectric element and device including the same |
JP2019167286A (ja) * | 2018-03-22 | 2019-10-03 | 三菱マテリアル株式会社 | 圧電体膜形成用液組成物及びこの液組成物を用いて圧電体膜を形成する方法 |
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CN110752289A (zh) * | 2018-07-23 | 2020-02-04 | 天津理工大学 | 一种基于MnZn共掺杂BiFeO3薄膜的阻变存储器及其制备方法 |
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JP2011222849A (ja) * | 2010-04-13 | 2011-11-04 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置、および圧電素子 |
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JP5248168B2 (ja) | 2008-04-01 | 2013-07-31 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
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JP2006261412A (ja) * | 2005-03-17 | 2006-09-28 | Seiko Epson Corp | 圧電素子及びその製造方法並びに圧電素子を用いた液体噴射ヘッド及び液体噴射装置 |
JP2007287745A (ja) * | 2006-04-12 | 2007-11-01 | Seiko Epson Corp | 圧電材料および圧電素子 |
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JP2011222849A (ja) * | 2010-04-13 | 2011-11-04 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置、および圧電素子 |
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US20130145589A1 (en) * | 2011-12-08 | 2013-06-13 | Seiko Epson Corporation | Method of manufacturing liquid ejecting head, method of manufacturing liquid ejecting apparatus and method of manufacturing piezoelectric element |
US8991052B2 (en) * | 2011-12-08 | 2015-03-31 | Seiko Epson Corporation | Method of manufacturing liquid ejecting head, method of manufacturing liquid ejecting apparatus and method of manufacturing piezoelectric element |
JP2015154037A (ja) * | 2014-02-19 | 2015-08-24 | セイコーエプソン株式会社 | 圧電アクチュエーター、液体噴射ヘッド、及び圧電アクチュエーターの製造方法 |
US10297742B2 (en) | 2016-11-16 | 2019-05-21 | Seiko Epson Corporation | Piezoelectric element and device including the same |
JP2019167286A (ja) * | 2018-03-22 | 2019-10-03 | 三菱マテリアル株式会社 | 圧電体膜形成用液組成物及びこの液組成物を用いて圧電体膜を形成する方法 |
JP7155730B2 (ja) | 2018-03-22 | 2022-10-19 | 三菱マテリアル株式会社 | 圧電体膜形成用液組成物及びこの液組成物を用いて圧電体膜を形成する方法 |
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US8820894B2 (en) | 2014-09-02 |
JP5975210B2 (ja) | 2016-08-23 |
US20130250006A1 (en) | 2013-09-26 |
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