JP2013187521A5 - - Google Patents

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Publication number
JP2013187521A5
JP2013187521A5 JP2012054170A JP2012054170A JP2013187521A5 JP 2013187521 A5 JP2013187521 A5 JP 2013187521A5 JP 2012054170 A JP2012054170 A JP 2012054170A JP 2012054170 A JP2012054170 A JP 2012054170A JP 2013187521 A5 JP2013187521 A5 JP 2013187521A5
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JP
Japan
Prior art keywords
type
region
breakdown voltage
high breakdown
semiconductor device
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JP2012054170A
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English (en)
Japanese (ja)
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JP5964091B2 (ja
JP2013187521A (ja
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Priority claimed from JP2012054170A external-priority patent/JP5964091B2/ja
Priority to JP2012054170A priority Critical patent/JP5964091B2/ja
Application filed filed Critical
Priority to TW102107482A priority patent/TWI590454B/zh
Priority to US13/785,674 priority patent/US9112013B2/en
Priority to CN201310074966.5A priority patent/CN103311246B/zh
Publication of JP2013187521A publication Critical patent/JP2013187521A/ja
Publication of JP2013187521A5 publication Critical patent/JP2013187521A5/ja
Priority to US14/797,967 priority patent/US20150325486A1/en
Publication of JP5964091B2 publication Critical patent/JP5964091B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2012054170A 2012-03-12 2012-03-12 半導体装置およびその製造方法 Active JP5964091B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012054170A JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法
TW102107482A TWI590454B (zh) 2012-03-12 2013-03-04 半導體裝置及其製造方法
US13/785,674 US9112013B2 (en) 2012-03-12 2013-03-05 Semiconductor device and method for producing the same
CN201310074966.5A CN103311246B (zh) 2012-03-12 2013-03-11 半导体器件及其制造方法
US14/797,967 US20150325486A1 (en) 2012-03-12 2015-07-13 Semiconductor device and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012054170A JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2013187521A JP2013187521A (ja) 2013-09-19
JP2013187521A5 true JP2013187521A5 (https=) 2014-09-25
JP5964091B2 JP5964091B2 (ja) 2016-08-03

Family

ID=49113335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012054170A Active JP5964091B2 (ja) 2012-03-12 2012-03-12 半導体装置およびその製造方法

Country Status (4)

Country Link
US (2) US9112013B2 (https=)
JP (1) JP5964091B2 (https=)
CN (1) CN103311246B (https=)
TW (1) TWI590454B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6189771B2 (ja) * 2014-03-03 2017-08-30 ルネサスエレクトロニクス株式会社 半導体装置
CN106611790B (zh) * 2015-10-26 2020-07-17 上海新昇半导体科技有限公司 垂直晶体管及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
EP0741416B1 (en) * 1995-05-02 2001-09-26 STMicroelectronics S.r.l. Thin epitaxy RESURF ic containing HV p-ch and n-ch devices with source or drain not tied to grounds potential
JP2002353441A (ja) * 2001-05-22 2002-12-06 Denso Corp パワーｍｏｓトランジスタ
US6475870B1 (en) * 2001-07-23 2002-11-05 Taiwan Semiconductor Manufacturing Company P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture
US6858500B2 (en) * 2002-01-16 2005-02-22 Fuji Electric Co., Ltd. Semiconductor device and its manufacturing method
JP4677166B2 (ja) 2002-06-27 2011-04-27 三洋電機株式会社 半導体装置及びその製造方法
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
JP2006128640A (ja) * 2004-09-30 2006-05-18 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20080017897A1 (en) * 2006-01-30 2008-01-24 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing same
JP2008004649A (ja) 2006-06-21 2008-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4568325B2 (ja) 2007-12-20 2010-10-27 シャープ株式会社 半導体装置及びその製造方法
TWI397180B (zh) * 2008-12-17 2013-05-21 世界先進積體電路股份有限公司 在積體電路中具靜電放電防護能力的水平擴散金氧半導體電晶體（ｌｄｍｏｓ）元件
JP2010245160A (ja) * 2009-04-02 2010-10-28 Renesas Electronics Corp 半導体装置の製造方法
US8193585B2 (en) * 2009-10-29 2012-06-05 Freescale Semiconductor, Inc. Semiconductor device with increased snapback voltage
JP5624816B2 (ja) * 2010-07-06 2014-11-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
US8749016B2 (en) * 2010-10-06 2014-06-10 Macronix International Co., Ltd. High voltage MOS device and method for making the same
JP5665567B2 (ja) * 2011-01-26 2015-02-04 株式会社東芝 半導体素子
US8802529B2 (en) * 2011-07-19 2014-08-12 Alpha And Omega Semiconductor Incorporated Semiconductor device with field threshold MOSFET for high voltage termination

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