JP2013157641A - 金属配線コンタクト構造及び層のパターニング方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
【解決手段】多層電極構造の形成方法10は、半導体基板14上に導電コンタクト層20を成膜するステップと、導電コンタクト層20の一部分の上に金属含有インクを成膜し、導電コンタクト層20の露出部分を金属含有インクに隣接させるステップと、導電コンタクト層20の露出部分を半導体基板14から除去することによって導電コンタクト層20をパターニングするステップと、を含む。
【選択図】図1
Description
のオーダである。この半導体エミッタ層と銀グリッド線との間の接触比抵抗は、約10-7Ω・cm2のオーダである半導体ICデバイスの接触比抵抗よりも数桁大きい。この大き
な接触比抵抗のために、太陽電池のエミッタ層へのドーピング量を大きくし、エミッタと
銀グリッド線との間の接触面積を大きく取らねばならない。そうしないと、ペーストの銀がシリコンとの良好な電気接触をとることができない。多量にドーピングすることは、セルの表面部の少数キャリアの寿命を損ない、青色波長に対するセルの応答を制限する。また、接触面積が大きいことは、表面での再結合速度を大きくしてしまう。その結果、太陽電池全体としての効率は低下する。ガラスフリット手法のもう一つの問題は、プロセスのマージンが小さいことである。グリッド線を焼成する温度サイクルでは、シリコン窒化物を通してシリコンと銀との導通を取るための熱処理を行うが、このとき銀が接合部にシャントあるいはその他の形でダメージを与えることがないようにする必要があり、プロセスマージンの小さいことが問題となる。このプロセスマージンが小さいことにより、処理時間を約30秒のオーダに、また最高焼成温度付近で温度幅を約10℃に、厳密に制限する必要がある。
以後「装置200」と称す)を図2に示す。図2のプロセス装置200は方法10を実行するための例示であって、方法10を装置200の特定の実施形態に限定するものではないことを理解されたい。
るいは複数の穴500のそれぞれは、約0.01mm〜約2mm、もしくは約0.1mm〜約1mm、もしくは約0.2mm〜約0.5mmのピッチである。
る。レーザ310のパルス長は約数十ナノ秒のオーダである。波長は約266nmのオーダである。短パルス、短波長のこのようなレーザでは、エネルギが表面近傍に蓄積され、半導体基板14の溶融はあったとしても短時間である。その結果、半導体基板14の拡散領域におけるドーピングプロファイルの変化は最小に抑えられる。波長が266nmのフォトンのエネルギは約4.66eVである。誘電体層16のバンドギャップは広範囲に変化するが、このフォトンのエネルギは最も透明な形態のシリコン窒化物のバンドギャップに匹敵する。この高エネルギのフォトンは表面のパッシベーション、および/またはその下の半導体基板の最表面の数ナノメートルで吸収される。ドーピング量の少ないエミッタは、燐の拡散深さが約200nmであり、シート抵抗は約100Ωのオーダで、物理的な表面ではドーパントは非縮退レベルにある。半導体基板14の材料は熱の良い伝導体であ
り、誘電体層16の表面パッシベーションの下に形成される半導体基板14の溶融部を急速に冷却する。実施形態においては、プロセス条件を適切に制御することにより、下のシリコン層の厚さ、あるいはドーピングプロファイルを大きく変化させることなく、シリコン窒化物のパッシベーションを除去することができる。
。例として、ナノ粒子インクの粒子は、約1nm〜約250nm、もしくは約5nm〜約150nm、もしくは約10nm〜約100nmの平均粒子サイズを有する。
ができるという従来法にはない利点がある。
れる。化学エッチング液は望ましくは、金属含有インク22、および金属含有インク22でマスクされ保護されている導電コンタクト層20の非露出部に損傷を与えない。
10-8Ω・cm2、もしくは約10−4Ω・cm2未満〜約10-8Ω・cm2となる。
12 多層電極構造
14 半導体基板
15 半導体基板表側
16 誘電体層
18 開口部
20 導電コンタクト層
200 装置
202 搬送機構
204 基板ロード機構
206 コンベヤ
208 非接触パターニング装置
210 導電層成膜装置
212 金属含有インク成膜装置
214 導電層除去装置
216 基板アンロード機構
218 熱処理装置
300 レーザ装置
310 レーザ
330 回転ミラー
340 走査レンズ
317 コンタクト用開口部
500 穴
502 線
Claims (2)
- 半導体基板上の金属配線コンタクト構造であって、
前記半導体基板への1つまたは複数の開口部を含むパターニングされた誘電体層と、
前記1つまたは複数の開口部に対して位置合わせされた通電用焼結金属グリッド線と、
前記通電用焼結金属グリッド線と前記パターニングされた誘電体層との間に、前記通電用焼結金属グリッド線に対して位置合わせされて配設された、パターニングされた導電コンタクト層と、
を含むことを特徴とする金属配線コンタクト構造。 - 層のパターニング方法であって、
基板上に層を成膜するステップと、
前記層の一部分の上に金属含有インクを成膜し、前記層の露出された部分を前記金属含有インクに隣接させるステップと、
前記成膜された金属含有インクを保護マスクとして用いて、前記層の前記露出された部分を前記基板から除去することによって、前記層をパターニングするステップと、
前記金属含有インクを除去するステップと、
を含むことを特徴とする層のパターニング方法。
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US11/962,987 | 2007-12-21 | ||
US11/962,987 US7820540B2 (en) | 2007-12-21 | 2007-12-21 | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
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JP2013099924A Expired - Fee Related JP5613287B2 (ja) | 2007-12-21 | 2013-05-10 | 金属配線コンタクト構造及び層のパターニング方法 |
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JP5613287B2 (ja) | 2014-10-22 |
EP2073275A3 (en) | 2015-11-11 |
EP2073275A2 (en) | 2009-06-24 |
CN101465391A (zh) | 2009-06-24 |
JP2009152589A (ja) | 2009-07-09 |
CN101465391B (zh) | 2013-09-18 |
EP2073275B1 (en) | 2016-11-09 |
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US7820540B2 (en) | 2010-10-26 |
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