CN107538010B - 一种降低纳米金属颗粒烧结温度的方法 - Google Patents
一种降低纳米金属颗粒烧结温度的方法 Download PDFInfo
- Publication number
- CN107538010B CN107538010B CN201710581612.8A CN201710581612A CN107538010B CN 107538010 B CN107538010 B CN 107538010B CN 201710581612 A CN201710581612 A CN 201710581612A CN 107538010 B CN107538010 B CN 107538010B
- Authority
- CN
- China
- Prior art keywords
- substrate
- metal particles
- nano
- sintering temperature
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005245 sintering Methods 0.000 title claims abstract description 40
- 239000002923 metal particle Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 230000001788 irregular Effects 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 description 9
- 239000002105 nanoparticle Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710581612.8A CN107538010B (zh) | 2017-07-17 | 2017-07-17 | 一种降低纳米金属颗粒烧结温度的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710581612.8A CN107538010B (zh) | 2017-07-17 | 2017-07-17 | 一种降低纳米金属颗粒烧结温度的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107538010A CN107538010A (zh) | 2018-01-05 |
CN107538010B true CN107538010B (zh) | 2021-06-04 |
Family
ID=60970622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710581612.8A Active CN107538010B (zh) | 2017-07-17 | 2017-07-17 | 一种降低纳米金属颗粒烧结温度的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107538010B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109848497A (zh) * | 2019-01-23 | 2019-06-07 | 哈尔滨工业大学(深圳) | 一种用于大面积基板封装的低温烧结方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465391A (zh) * | 2007-12-21 | 2009-06-24 | 帕洛阿尔托研究中心公司 | 金属化接触结构和形成硅太阳能电池多层电极结构的方法 |
CN103151430A (zh) * | 2011-12-06 | 2013-06-12 | 北京大学深圳研究生院 | 纳米金属粒实现led的低温金属界面连接的制备方法 |
CN103262172A (zh) * | 2010-11-03 | 2013-08-21 | 弗赖斯金属有限公司 | 烧结材料及使用该材料的附着方法 |
CN104835555A (zh) * | 2015-05-13 | 2015-08-12 | 南京邮电大学 | 一种图案化金属透明导电薄膜的制备方法 |
JP2015214722A (ja) * | 2014-05-08 | 2015-12-03 | 国立大学法人北海道大学 | 銅微粒子焼結体と導電性基板の製造方法 |
-
2017
- 2017-07-17 CN CN201710581612.8A patent/CN107538010B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465391A (zh) * | 2007-12-21 | 2009-06-24 | 帕洛阿尔托研究中心公司 | 金属化接触结构和形成硅太阳能电池多层电极结构的方法 |
CN103262172A (zh) * | 2010-11-03 | 2013-08-21 | 弗赖斯金属有限公司 | 烧结材料及使用该材料的附着方法 |
CN103151430A (zh) * | 2011-12-06 | 2013-06-12 | 北京大学深圳研究生院 | 纳米金属粒实现led的低温金属界面连接的制备方法 |
JP2015214722A (ja) * | 2014-05-08 | 2015-12-03 | 国立大学法人北海道大学 | 銅微粒子焼結体と導電性基板の製造方法 |
CN104835555A (zh) * | 2015-05-13 | 2015-08-12 | 南京邮电大学 | 一种图案化金属透明导电薄膜的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107538010A (zh) | 2018-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8808860B2 (en) | 3-dimensional nanostructure having nanomaterials stacked on graphene substrate and fabrication method thereof | |
Perelaer et al. | Printed electronics: the challenges involved in printing devices, interconnects, and contacts based on inorganic materials | |
Kim et al. | Tensile characteristics of metal nanoparticle films on flexible polymer substrates for printed electronics applications | |
JP5606905B2 (ja) | 配向させたナノワイヤーおよび他の電気的素子をプリントするための方法およびシステム | |
Wang et al. | Synthesis of copper nanowires and its application to flexible transparent electrode | |
JP2020513671A (ja) | ナノロッド含有コーティングでコーティングされた電子エミッタを生産する方法 | |
EP3187473A1 (en) | Graphene-based electrical conductors and method for manufacturing the same | |
US9899117B2 (en) | Metallic nanomesh | |
KR20100053628A (ko) | 수식된 고종횡비 입자를 구비한 전압 절환형 절연 물질 | |
US20160012936A1 (en) | Graphene Printed Pattern Circuit Structure | |
WO2012168941A1 (en) | Flexible transparent conductive coatings by direct room temperature evaporative lithography | |
US20150173200A1 (en) | Method of forming metal lines having high conductivity using metal nanoparticle ink on flexible substrate | |
Michel et al. | A thermally-invariant, additively manufactured, high-power graphene resistor for flexible electronics | |
WO2018169012A1 (ja) | 分散体並びにこれを用いた導電性パターン付構造体の製造方法及び導電性パターン付構造体 | |
Standing et al. | High yield transfer of ordered nanowire arrays into transparent flexible polymer films | |
CN107538010B (zh) | 一种降低纳米金属颗粒烧结温度的方法 | |
US20140048420A1 (en) | Method for fabricating one-dimensional metallic nanostructures | |
Allioux et al. | Nanotip formation from liquid metals for soft electronic junctions | |
WO2011084481A1 (en) | Electrically and/or thermally conductive suspensions including graphite microfluids | |
KR20120120101A (ko) | 그래핀 기판 상에 나노물질이 적층되어 있는 3차원 나노구조체 및 그 제조방법 | |
Ji et al. | Laser patterning of highly conductive flexible circuits | |
KR100987385B1 (ko) | 나노 구조물 복합체 및 그의 제조 방법 | |
KR101442458B1 (ko) | 투명 전극 및 이를 포함하는 전자 재료 | |
JP5583752B2 (ja) | ナノ粒子を用いた構造製造 | |
Yao et al. | Investigation of Gas-Sensing Performance of ${\rm SnO} _ {\rm 2} $ Nanoparticles With Different Morphologies |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231018 Address after: No.2 building, Chongwen Park, Nanshan wisdom Park, no.3370 Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518000 Patentee after: Shenzhen Hushen Intelligent Material Technology Co.,Ltd. Address before: 518000 Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: HARBIN INSTITUTE OF TECHNOLOGY (SHENZHEN) Effective date of registration: 20231018 Address after: 518000 Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: HARBIN INSTITUTE OF TECHNOLOGY (SHENZHEN) Address before: 518000 Guangdong Shenzhen Nanshan District Xili Town, Shenzhen University City, Harbin Industrial University Campus Patentee before: HARBIN INSTITUTE OF TECHNOLOGY SHENZHEN GRADUATE SCHOOL |