JP2013152981A5 - - Google Patents

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Publication number
JP2013152981A5
JP2013152981A5 JP2012011869A JP2012011869A JP2013152981A5 JP 2013152981 A5 JP2013152981 A5 JP 2013152981A5 JP 2012011869 A JP2012011869 A JP 2012011869A JP 2012011869 A JP2012011869 A JP 2012011869A JP 2013152981 A5 JP2013152981 A5 JP 2013152981A5
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Japan
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type base
modification
vld structure
pad
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JP2012011869A
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English (en)
Japanese (ja)
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JP2013152981A (ja
JP5765251B2 (ja
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Priority claimed from JP2012011869A external-priority patent/JP5765251B2/ja
Priority to JP2012011869A priority Critical patent/JP5765251B2/ja
Priority to US13/618,935 priority patent/US9093310B2/en
Priority to DE102012219645.5A priority patent/DE102012219645B4/de
Priority to KR1020120148030A priority patent/KR20130086271A/ko
Priority to CN201310001570.8A priority patent/CN103219364B/zh
Publication of JP2013152981A publication Critical patent/JP2013152981A/ja
Publication of JP2013152981A5 publication Critical patent/JP2013152981A5/ja
Priority to KR1020140119114A priority patent/KR101550675B1/ko
Publication of JP5765251B2 publication Critical patent/JP5765251B2/ja
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JP2012011869A 2012-01-24 2012-01-24 半導体装置及びその製造方法 Active JP5765251B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012011869A JP5765251B2 (ja) 2012-01-24 2012-01-24 半導体装置及びその製造方法
US13/618,935 US9093310B2 (en) 2012-01-24 2012-09-14 Semiconductor device having a variation lateral doping structure and method for manufaturing the same
DE102012219645.5A DE102012219645B4 (de) 2012-01-24 2012-10-26 Halbleitervorrichtungen und Verfahren zu ihrer Herstellung
KR1020120148030A KR20130086271A (ko) 2012-01-24 2012-12-18 반도체장치 및 그 제조방법
CN201310001570.8A CN103219364B (zh) 2012-01-24 2013-01-04 半导体装置及其制造方法
KR1020140119114A KR101550675B1 (ko) 2012-01-24 2014-09-05 반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012011869A JP5765251B2 (ja) 2012-01-24 2012-01-24 半導体装置及びその製造方法

Publications (3)

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JP2013152981A JP2013152981A (ja) 2013-08-08
JP2013152981A5 true JP2013152981A5 (enExample) 2014-07-03
JP5765251B2 JP5765251B2 (ja) 2015-08-19

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ID=48742453

Family Applications (1)

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JP2012011869A Active JP5765251B2 (ja) 2012-01-24 2012-01-24 半導体装置及びその製造方法

Country Status (5)

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US (1) US9093310B2 (enExample)
JP (1) JP5765251B2 (enExample)
KR (2) KR20130086271A (enExample)
CN (1) CN103219364B (enExample)
DE (1) DE102012219645B4 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489917B (zh) * 2013-10-22 2016-09-21 东南大学 一种高雪崩耐量能力的纵向双扩散金属氧化物半导体结构
CN104934470B (zh) * 2014-03-18 2018-05-29 国家电网公司 一种igbt芯片及其制造方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US9553184B2 (en) * 2014-08-29 2017-01-24 Nxp Usa, Inc. Edge termination for trench gate FET
US9397213B2 (en) 2014-08-29 2016-07-19 Freescale Semiconductor, Inc. Trench gate FET with self-aligned source contact
CN105390397A (zh) * 2014-09-04 2016-03-09 北大方正集团有限公司 变掺杂器件制作方法及变掺杂器件
JP2016174030A (ja) 2015-03-16 2016-09-29 株式会社東芝 半導体装置
US9680003B2 (en) 2015-03-27 2017-06-13 Nxp Usa, Inc. Trench MOSFET shield poly contact
JP6662393B2 (ja) * 2015-12-28 2020-03-11 三菱電機株式会社 半導体装置、半導体装置の製造方法
DE102016118012A1 (de) 2016-09-23 2018-03-29 Infineon Technologies Ag Halbleiterbauelement und Verfahren zum Bilden eines Halbleiterbauelements
JP6766889B2 (ja) * 2017-01-17 2020-10-14 富士電機株式会社 半導体装置および半導体装置の製造方法
CN107579057A (zh) * 2017-09-14 2018-01-12 全球能源互联网研究院 能进行终端横向耐压测试的igbt版图
JP7052476B2 (ja) * 2018-03-27 2022-04-12 三菱電機株式会社 半導体装置
JP7172216B2 (ja) 2018-07-13 2022-11-16 富士電機株式会社 半導体装置および半導体回路装置
CN111900087B (zh) * 2020-08-31 2022-09-20 华虹半导体(无锡)有限公司 Igbt器件的制造方法
JP7580352B2 (ja) * 2021-09-01 2024-11-11 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
KR102414388B1 (ko) * 2022-03-24 2022-06-29 (주) 트리노테크놀로지 Vld 구조의 내압 영역을 가지는 전력 반도체 장치 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345265A (en) 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
JPH03180074A (ja) * 1989-12-08 1991-08-06 Fujitsu Ltd 半導体装置
US5686750A (en) 1991-09-27 1997-11-11 Koshiba & Partners Power semiconductor device having improved reverse recovery voltage
DE69531783T2 (de) 1995-10-09 2004-07-15 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno - Corimme Herstellungsverfahren für Leistungsanordnung mit Schutzring
JP4122113B2 (ja) * 1999-06-24 2008-07-23 新電元工業株式会社 高破壊耐量電界効果型トランジスタ
JP4357753B2 (ja) 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
DE102005023668B3 (de) 2005-05-23 2006-11-09 Infineon Technologies Ag Halbleiterbauelement mit einer Randstruktur mit Spannungsdurchbruch im linearen Bereich
JP2008103529A (ja) 2006-10-19 2008-05-01 Toyota Central R&D Labs Inc 半導体装置
JP4621708B2 (ja) 2007-05-24 2011-01-26 株式会社東芝 半導体装置及びその製造方法
US8564088B2 (en) 2008-08-19 2013-10-22 Infineon Technologies Austria Ag Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
US8716792B2 (en) 2008-09-30 2014-05-06 Infineon Technologies Austria Ag Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
JP5515922B2 (ja) 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP4864153B2 (ja) 2010-06-30 2012-02-01 株式会社小松製作所 ラバースプリング装置を架設したオフロードトラック
JP6067957B2 (ja) 2011-02-15 2017-01-25 三菱電機株式会社 半導体装置

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