JP2013123054A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2013123054A JP2013123054A JP2012268178A JP2012268178A JP2013123054A JP 2013123054 A JP2013123054 A JP 2013123054A JP 2012268178 A JP2012268178 A JP 2012268178A JP 2012268178 A JP2012268178 A JP 2012268178A JP 2013123054 A JP2013123054 A JP 2013123054A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 94
- 229910052710 silicon Inorganic materials 0.000 description 94
- 239000010703 silicon Substances 0.000 description 94
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000007769 metal material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】本発明の太陽電池は、少なくとも二つの電池ユニットを含む太陽電池であって、一つの電池ユニットは、第一電極層と、p型半導体層と、n型半導体層と、第二電極層と、を含み、前記一つの電池ユニットは受光面を有し、前記第一電極層と、p型半導体層と、n型半導体層と、第二電極層とは並列接続し且つ接触して設置され、前記p型半導体層と前記n型半導体層とは接触してpn接合を形成し、前記第一電極層と前記第二電極層とは、前記pn接合の両側にそれぞれ設置され、前記少なくとも二つの電池ユニットは一つの直線上に並列に接触して設置され、前記直線の延伸方向は第一方向と定義され、前記受光面は第一方向と平行であり、隣接する二つの前記電池ユニットの隣接する半導体層のタイプは同じである。
【選択図】図1
Description
図1を参照すると、本発明の実施例1は太陽電池20を提供する。該太陽電池20は二つの電池ユニット200を含み、該二つの電池ユニット200は並列接続され且つ互いに接触して設置される。一つの電池ユニット200は、第一電極層22と、p型シリコン層24と、n型シリコン層26と、第二電極層28と、を含む。
図3及び図4を参照すると、本発明の実施例2は太陽電池30を提供する。太陽電池30は複数の電池ユニット300を含み、該複数の電池ユニット300は並列接続され且つ接触して設置される。一つの電池ユニット300は、第一電極層32と、p型シリコン層34と、n型シリコン層36及び第二電極層38と、を含む。
図5を参照すると、本発明の実施例3は太陽電池40を提供する。太陽電池40は複数の電池ユニット400を含み、該複数の電池ユニット400は並列接続され且つ接触して設置される。一つの電池ユニット400は、第一電極層32と、p型シリコン層34と、n型シリコン層36及び第二電極層38と、を含む。
200、300、400 電池ユニット
22、32 第一電極層
24、34 p型シリコン層
242、342 第一側面
244、344 第二側面
26、36 n型シリコン層
262、362 第三側面
264、364 第四側面
243、343 第一表面
263、363 第二表面
27、37 受光面
28、38 第二電極層
Claims (1)
- 少なくとも二つの電池ユニットを含む太陽電池であって、
一つの電池ユニットは、第一電極層と、p型半導体層と、n型半導体層と、第二電極層と、を含み、
前記一つの電池ユニットは受光面を有し、
前記第一電極層と、p型半導体層と、n型半導体層と、第二電極層とは並列接続し且つ接触して設置され、
前記p型半導体層と前記n型半導体層とは接触してpn接合を形成し、
前記第一電極層と前記第二電極層とは、前記pn接合の両側にそれぞれ設置され、
前記少なくとも二つの電池ユニットは一つの直線上に並列に接触して設置され、
前記直線の延伸方向が第一方向と定義され、
前記受光面は第一方向と平行であり、
隣接する二つの前記電池ユニットの隣接する半導体層のタイプは同じであることを特徴とする太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110408591.2A CN103165718B (zh) | 2011-12-09 | 太阳能电池组 | |
CN201110408591.2 | 2011-12-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013123054A true JP2013123054A (ja) | 2013-06-20 |
JP5531082B2 JP5531082B2 (ja) | 2014-06-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012268178A Active JP5531082B2 (ja) | 2011-12-09 | 2012-12-07 | 太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9209335B2 (ja) |
JP (1) | JP5531082B2 (ja) |
TW (1) | TWI506801B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11509264B2 (en) * | 2014-05-22 | 2022-11-22 | Solar Cubed Holdings Llc | Full spectrum electro-magnetic energy system |
US20160126382A1 (en) * | 2014-07-03 | 2016-05-05 | Mh Gopower Co., Ltd. | Energy conversion device with multiple voltage outputs and power transistor module using the same |
US20160005906A1 (en) * | 2014-07-03 | 2016-01-07 | MH Solar Co. LTD. | Optoelectronic Thermal Interfaces for 3-Dimensional Billet Devices, Including Vertical Multijunction Photovoltaic Receivers Using Heat Sinked Anode/Billet/Cathode For High Intensity Beaming and Wireless Power Transmission |
FR3054725B1 (fr) | 2016-07-26 | 2019-05-17 | Institut Polytechnique De Grenoble | Dispositif optoelectronique et son procede de fabrication |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409422A (en) * | 1974-11-08 | 1983-10-11 | Sater Bernard L | High intensity solar cell |
FR2666453A1 (fr) * | 1990-08-31 | 1992-03-06 | Commissariat Energie Atomique | Batterie de photopiles montees en serie. |
WO2010019685A1 (en) * | 2008-08-14 | 2010-02-18 | Greenfield Solar Corp. | Photovoltaic cells with processed surfaces and related applications |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3422527A (en) | 1965-06-21 | 1969-01-21 | Int Rectifier Corp | Method of manufacture of high voltage solar cell |
GB1046168A (en) | 1965-08-13 | 1966-10-19 | Standard Telephones Cables Ltd | Semiconductor light modulator |
US4110122A (en) | 1976-05-26 | 1978-08-29 | Massachusetts Institute Of Technology | High-intensity, solid-state-solar cell device |
JPS62105485A (ja) | 1985-10-31 | 1987-05-15 | Sharp Corp | 半導体基体の製造方法 |
AU602114B2 (en) | 1987-09-08 | 1990-09-27 | Ebara Solar, Inc. | Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby |
US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
JPH029176A (ja) | 1988-06-27 | 1990-01-12 | Matsushita Electric Works Ltd | 光電変換装置および半導体装置 |
JP2000294818A (ja) | 1999-04-05 | 2000-10-20 | Sony Corp | 薄膜半導体素子およびその製造方法 |
JP2001313401A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 光電変換装置 |
WO2002035612A1 (en) | 2000-10-20 | 2002-05-02 | Josuke Nakata | Light-emitting or light-receiving semiconductor device and method for fabricating the same |
WO2003005457A1 (en) | 2001-07-04 | 2003-01-16 | Ebara Corporation | Solar cell module and method of manufacturing the same |
JP3902210B2 (ja) | 2002-05-02 | 2007-04-04 | 仗祐 中田 | 受光又は発光用パネルおよびその製造方法 |
US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
JP3866747B2 (ja) | 2002-10-15 | 2007-01-10 | シャープ株式会社 | 太陽電池モジュール |
JP2004281758A (ja) | 2003-03-17 | 2004-10-07 | Sharp Corp | 太陽電池およびその製造方法 |
US7781672B2 (en) * | 2004-06-01 | 2010-08-24 | Konarka Technologies, Inc. | Photovoltaic module architecture |
JP3687970B1 (ja) | 2004-12-24 | 2005-08-24 | 信越化学工業株式会社 | 太陽光発電用モジュール及びこれを用いた太陽光発電システム |
US20080083448A1 (en) * | 2006-09-29 | 2008-04-10 | Borden Peter G | Interconnect for thin film photovoltaic modules |
US20080185033A1 (en) | 2007-02-06 | 2008-08-07 | Kalejs Juris P | Solar electric module |
US8723332B2 (en) * | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
US7846750B2 (en) * | 2007-06-12 | 2010-12-07 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
US7709730B2 (en) * | 2007-09-05 | 2010-05-04 | Skyline Solar, Inc. | Dual trough concentrating solar photovoltaic module |
US8481845B2 (en) * | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
US20090211633A1 (en) | 2008-02-21 | 2009-08-27 | Konarka Technologies Inc. | Tandem Photovoltaic Cells |
CN101552296B (zh) | 2008-04-03 | 2011-06-08 | 清华大学 | 太阳能电池 |
CN101527327B (zh) | 2008-03-07 | 2012-09-19 | 清华大学 | 太阳能电池 |
CN101566303B (zh) * | 2008-04-23 | 2011-01-05 | 富士迈半导体精密工业(上海)有限公司 | 照明装置 |
AU2009260580B2 (en) | 2008-05-27 | 2015-07-16 | University Of Houston | Fiber photovoltaic devices and methods for production thereof |
WO2010038482A1 (ja) | 2008-10-03 | 2010-04-08 | 凸版印刷株式会社 | 太陽電池モジュール |
WO2010134019A2 (en) | 2009-05-19 | 2010-11-25 | Ramot At Tel Aviv University Ltd. | Vertical junction pv cells |
EP3509111B1 (en) * | 2009-06-18 | 2021-03-10 | LG Electronics Inc. | Solar cell |
US20110005575A1 (en) * | 2009-07-09 | 2011-01-13 | Xunlight Corporation | Back reflector for photovoltaic devices |
JPWO2011024534A1 (ja) | 2009-08-27 | 2013-01-24 | 独立行政法人産業技術総合研究所 | 多接合光電変換装置、集積型多接合光電変換装置、並びにその製造方法 |
US8900674B2 (en) | 2009-10-06 | 2014-12-02 | Tel Solar Ag | Method of coating a substrate |
JP2011086647A (ja) | 2009-10-13 | 2011-04-28 | Hokkaido Univ | 光電変換素子評価装置、光電変換素子評価方法および光電変換素子の製造方法 |
CA2721221A1 (en) * | 2009-11-16 | 2011-05-16 | Certainteed Corporation | Photovoltaic arrays, methods and kits therefor |
TW201133881A (en) | 2010-03-22 | 2011-10-01 | Auria Solar Co Ltd | Thin film solar cell and manufacturing method thereof |
TWM416877U (en) | 2011-04-29 | 2011-11-21 | Auria Solar Co Ltd | Solar cell module |
-
2011
- 2011-12-21 TW TW100147860A patent/TWI506801B/zh active
-
2012
- 2012-05-18 US US13/474,920 patent/US9209335B2/en active Active
- 2012-12-07 JP JP2012268178A patent/JP5531082B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409422A (en) * | 1974-11-08 | 1983-10-11 | Sater Bernard L | High intensity solar cell |
FR2666453A1 (fr) * | 1990-08-31 | 1992-03-06 | Commissariat Energie Atomique | Batterie de photopiles montees en serie. |
WO2010019685A1 (en) * | 2008-08-14 | 2010-02-18 | Greenfield Solar Corp. | Photovoltaic cells with processed surfaces and related applications |
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US9209335B2 (en) | 2015-12-08 |
JP5531082B2 (ja) | 2014-06-25 |
TWI506801B (zh) | 2015-11-01 |
US20130146119A1 (en) | 2013-06-13 |
CN103165718A (zh) | 2013-06-19 |
TW201324812A (zh) | 2013-06-16 |
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