JP2013120931A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000011810 insulating material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 107
- 239000002019 doping agent Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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Abstract
【解決手段】第1導電タイプの半導体基板200上に第1導電のエピタキシャル層202を形成し、複数の第1トレンチ204を形成する。第1トレンチ204の側壁と底面上に複数の第1絶縁ライナー層206を形成した後、第1ドーピングプロセスを行い、複数の第1導電タイプの第1ドープ領域210を形成し、第1絶縁材料212を充填する。エピタキシャル層202に複数の第2トレンチ218を形成する。第2トレンチ218の側壁と底面上に複数の第2絶縁ライナー層220を形成した後、第2ドーピングプロセスを行い、第2導電タイプの第2ドープ領域222を形成する。更に第2トレンチ218に第2絶縁材料を充填する。
【選択図】図7
Description
200…半導体基板
201…インターフェース
202…エピタキシャル層
203、213…上面
204…第1トレンチ
205、219…底面
206…第1絶縁ライナー層
207、221…側壁
208、216…ドーピングプロセス
210…第1ドープ領域
212…第1絶縁材料
218…第2トレンチ
220…第2絶縁ライナー層
222…第2ドープ領域
224…ゲート酸化物層パターン
226…ゲート層パターン
228…ゲート構造
230…第2絶縁材料
232…第1ウェル
234…ソース領域
236…層間誘電体層
238…接触開口
240…ピックアップドープ領域
242…コンタクトプラグ
250…スーパージャンクション構造
300…アクティブ領域
302…終端領域
θ1、θ2…角度
Claims (12)
- 半導体装置の製造方法であって、
第1導電タイプを有する半導体基板を提供するステップ、
前記半導体基板上に前記第1導電タイプを有するエピタキシャル層を形成するステップ、
前記エピタキシャル層に複数の第1トレンチを形成するステップ、
前記第1トレンチの側壁と底面上に複数の第1絶縁ライナー層を共形的に形成するステップ、
第1ドーピングプロセスを行い、前記第1導電タイプを有する第1ドーパントを前記第1トレンチの側壁に沿って前記エピタキシャル層にドープし、複数の第1ドープ領域を形成するステップ、
前記第1トレンチに第1絶縁材料を充填するステップ、
前記エピタキシャル層に複数の第2トレンチを形成するステップ、
前記第2トレンチの側壁と底面上に複数の第2絶縁ライナー層を共形的に形成するステップ、
第2ドーピングプロセスを行い、第2導電タイプを有する第2ドーパントを前記第2トレンチの側壁に沿って前記エピタキシャル層にドープし、複数の第2ドープ領域を形成するステップ、及び
前記第2トレンチに第2絶縁材料を充填するステップを含む半導体装置の製造方法。 - 前記第1導電タイプは、n型であり、且つ、前記第2導電タイプは、p型である請求項1に記載の半導体装置の製造方法。
- 前記半導体基板のドーパント濃度は、前記エピタキシャル層のドーパント濃度より大きい請求項1に記載の半導体装置の製造方法。
- 前記第1ドーピングプロセスを行った後、第1拡散プロセスを行い、前記第1ドーパントを各前記第1ドープ領域内に均一に分布させ、且つ、前記第2ドーピングプロセスを行った後、第2拡散プロセスを行い、前記第2ドーパントを各前記第2ドープ領域内に均一に分布させるステップを更に含む請求項1に記載の半導体装置の製造方法。
- 前記第1ドープ領域に位置された前記エピタキシャル層は、前記第1導電タイプを有し、且つ、前記第2ドープ領域に位置された前記エピタキシャル層は、前記第2導電タイプを有する請求項4に記載の半導体装置の製造方法。
- 前記第1トレンチと前記第2トレンチの底面は、前記エピタキシャル層内にある請求項1に記載の半導体装置の製造方法。
- 前記第1絶縁材料と前記第2絶縁材料は、酸化物材料または非ドープのポリシリコン材料を含み、且つ、前記第1絶縁材料と前記第2絶縁材料の上面と前記エピタキシャル層の上面は面一になっている請求項1に記載の半導体装置の製造方法。
- 前記第1トレンチと前記第2トレンチは、交互に配置されている請求項1に記載の半導体装置の製造方法。
- 各前記第1ドープ領域は、前記第2ドープ領域と隣接する請求項1に記載の半導体装置の製造方法。
- 前記第1ドープ領域と前記第2ドープ領域は、柱状である請求項1に記載の半導体装置の製造方法。
- 前記第1ドープ領域と前記第2ドープ領域のドーパント濃度は、前記エピタキシャル層のドーパント濃度より大きい請求項1に記載の半導体装置の製造方法。
- 前記第2絶縁材料を前記第2トレンチに充填した後、前記エピタキシャル層上にゲート酸化物層とゲート層を順次に形成するステップ、
前記ゲート酸化物層と前記ゲート層の一部を除去して、複数のゲート構造を形成し、前記ゲート構造が前記第1トレンチ及び前記第1トレンチに隣接する前記エピタキシャル層の一部をそれぞれ覆い、且つ、前記第2トレンチが前記ゲート構造から露出されるステップ、
前記ゲート構造で覆われていない前記エピタキシャル層に、前記第2導電タイプを有する第1ウェル領域を形成するステップ、
前記第1ウェル領域に、前記ゲート構造に隣接する、前記第1導電タイプを有する複数のソース領域をそれぞれ形成するステップ、
前記エピタキシャル層と前記ゲート構造を覆う層間誘電体層を形成するステップ、
前記層間誘電体層の一部を除去し、接触開口を形成し、前記第2トレンチと前記第2トレンチに隣接する前記エピタキシャル層の一部を前記接触開口から露出するステップ、
前記接触開口から露出された前記エピタキシャル層の一部に、前記第2導電タイプを有する複数のピックアップドープ領域を形成するステップ、及び
前記接触開口に導電材料を充填し、コンタクトプラグを形成するステップをさらに含む請求項1に記載の半導体装置の製造方法。
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CN105097915B (zh) * | 2014-05-05 | 2018-08-14 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
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