JP5622793B2 - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 238000000407 epitaxy Methods 0.000 claims description 123
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 23
- 239000003989 dielectric material Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 description 16
- 229910044991 metal oxide Inorganic materials 0.000 description 16
- 150000004706 metal oxides Chemical class 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000012010 growth Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Description
100…N型エピタキシードリフト領域
102…P型ベース領域
104…ソース領域
106…ドレイン領域
108…ゲート電極層
110…ゲート電極
112…ソース電極
114…ドレイン電極
20〜半導体装置
200…基板;
200a…第四ドーピング領域
200b…第五ドーピング領域
201、203、408…ドーピング工程
201a…第六ドーピング領域
203a…第七ドーピング領域
204…第一エピタキシー層
204a…第一ドーピング領域
204b…第二ドーピング領域
206…第二エピタキシー層
206a…トレンチ
208…ハードマスク
208a…開口
210…絶縁ライナー
212…第三ドーピング領域
308…ドープ層
310…誘電材料層
228…ゲート誘電層
230…ゲート電極
232…ウェル領域
234…ソース領域
A…アクティブ領域
B…界面
Claims (16)
- 半導体装置であって、
基板上にスタックされ、且つ、前記基板と共に第一導電型を有している複数の第一エピタキシー層であって、各第一エピタキシー層内に、少なくとも一つの第一ドーピング領域およびこれに隣接する少なくとも一つの第二ドーピング領域を有し、前記第一ドーピング領域は第二導電型を有し、且つ、前記第二ドーピング領域は第一導電型を有する複数の第一エピタキシー層と、
前記第一エピタキシー層上に設置され、且つ、前記第一導電型を有し、層内にトレンチを有し、下方の前記第一ドーピング領域を露出する複数の第二エピタキシー層と、
前記トレンチの一側壁に隣接し、且つ、前記第二導電型を有する第三ドーピング領域と、
前記第二ドーピング領域の上方の前記第二エピタキシー層上に設置されるゲート構造と、
前記トレンチ内に形成される誘電材料層とを備え、
前記第二エピタキシー層、前記第一ドーピング領域、前記第二ドーピング領域、及び前記第三ドーピング領域のドープ濃度が、各第一エピタキシー層のドープ濃度より高い
ことを特徴とする半導体装置。 - 前記基板は、
第四ドーピング領域及びその上に位置する第五ドーピング領域を有し、且つ、前記第五ドーピング領域内に、前記第一ドーピング領域に対応する少なくとも一つの第六ドーピング領域、及び、前記第六ドーピング領域に隣接し、且つ、前記第二ドーピング領域に対応する少なくとも一つの第七ドーピング領域を有し、
前記第四ドーピング領域、前記第五ドーピング領域および前記第七ドーピング領域は前記第一導電型を有し、前記第六ドーピング領域は前記第二導電型を有することを特徴とする請求項1に記載の半導体装置。 - 前記第二エピタキシー層と前記第一ドーピング領域、前記第二ドーピング領域、前記第三ドーピング領域、前記第六ドーピング領域及び前記第七ドーピング領域のドープ濃度は、
前記第五ドーピング領域のドープ濃度より高く、且つ、前記第四ドーピング領域のドープ濃度より低いことを特徴とする請求項2に記載の半導体装置。 - 前記第五ドーピング領域はエピタキシー層を含むことを特徴とする請求項2に記載の半導体装置。
- 前記第三ドーピング領域はトレンチ内に位置し、且つ、前記第三ドーピング領域は、エピタキシー層またはポリシリコン層を含むことを特徴とする請求項1に記載の半導体装置。
- 前記第三ドーピング領域はトレンチ内に位置し、且つ、前記第三ドーピング領域はエピタキシー層を有し、且つ、前記トレンチの側壁と底部上に形成されることを特徴とする請求項1に記載の半導体装置。
- 前記第三ドーピング領域は前記第二エピタキシー層内に位置することを特徴とする請求項1に記載の半導体装置。
- 前記トレンチ内に設置されるドープ層を含むことを特徴とする請求項7に記載の半導体装置。
- 半導体装置の製造方法であって、
基板上に、スタックされた複数の第一エピタキシー層を形成し、且つ、各第一エピタキシー層内に、少なくとも一つの第一ドーピング領域および隣接する少なくとも一つの第二ドーピング領域を形成し、前記第一エピタキシー層、前記基板および前記第二ドーピング領域は第一導電型を有し、且つ、前記第一ドーピング領域は第二導電型を有する、前記基板を提供する工程と、
前記第一エピタキシー層上に、前記第一導電型を有する第二エピタキシー層を形成する工程と、
前記第二エピタキシー層内に、トレンチを形成して、下方の前記第一ドーピング領域を露出する工程と、
前記トレンチの側壁上に、前記第二導電型を有する第三ドーピング領域を形成し、前記第二エピタキシー層、前記第一ドーピング領域、前記第二ドーピング領域、および前記第三ドーピング領域のドープ濃度を、各第一エピタキシー層のドープ濃度より高くする工程と、
前記トレンチ内に誘電材料層を充填する工程と、
前記第二ドーピング領域上方の前記第二エピタキシー層上に、ゲート構造を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記基板は、
第四ドーピング領域及びその上に位置する第五ドーピング領域を有し、且つ、前記第五ドーピング領域内に、前記第一ドーピング領域に対応する少なくとも一つの第六ドーピング領域、及び、前記第六ドーピング領域に隣接し、且つ、前記第二ドーピング領域に対応する少なくとも一つの第七ドーピング領域を有し、
前記第四、前記第五および前記第七ドーピング領域は前記第一導電型を有し、
前記第六ドーピング領域は前記第二導電型を有することを特徴とする請求項9に記載の半導体装置の製造方法。 - 前記第二エピタキシー層と前記第一ドーピング領域、前記第二ドーピング領域、前記第三ドーピング領域、前記第六ドーピング領域及び前記第七ドーピング領域のドープ濃度は、
前記第五ドーピング領域のドープ濃度より高く、且つ、前記第四ドーピング領域のドープ濃度より低いことを特徴とする請求項10に記載の半導体装置の製造方法。 - 前記第五ドーピング領域はエピタキシー層を含むことを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記誘電材料層はエピタキシー層またはポリシリコン層である
ことを特徴とする請求項9に記載の半導体装置の製造方法。 - 前記第三ドーピング領域を形成する工程は、前記トレンチの側壁および底部上に、エピタキシー層を形成する工程を含むことを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記第三ドーピング領域を形成する工程は、
前記トレンチの前記側壁上に、前記第二導電型を有するドープ層を形成する工程と、
前記ドープ層に対し、ドライブイン拡散を実行して、前記第二エピタキシー層内に、前記第三ドーピング領域を形成する工程と、
を含むことを特徴とする請求項9に記載の半導体装置の製造方法。 - 前記第三ドーピング領域を形成する工程は、前記トレンチの前記側壁に対し、気相ドーピングまたはイオン注入を実行して、前記第二エピタキシー層内に、前記第三ドーピング領域を形成する工程を含むことを特徴とする請求項9に記載の半導体装置の製造方法。
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US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
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US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
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