JP2013110137A - 光デバイス層の移替装置およびレーザー加工機 - Google Patents
光デバイス層の移替装置およびレーザー加工機 Download PDFInfo
- Publication number
- JP2013110137A JP2013110137A JP2011251358A JP2011251358A JP2013110137A JP 2013110137 A JP2013110137 A JP 2013110137A JP 2011251358 A JP2011251358 A JP 2011251358A JP 2011251358 A JP2011251358 A JP 2011251358A JP 2013110137 A JP2013110137 A JP 2013110137A
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- JP
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- Prior art keywords
- substrate
- holding
- optical device
- holding means
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 199
- 239000002131 composite material Substances 0.000 claims abstract description 78
- 238000000407 epitaxy Methods 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011251358A JP2013110137A (ja) | 2011-11-17 | 2011-11-17 | 光デバイス層の移替装置およびレーザー加工機 |
TW101137696A TW201322479A (zh) | 2011-11-17 | 2012-10-12 | 光元件層之轉移裝置及雷射加工機 |
KR1020120124089A KR20130054912A (ko) | 2011-11-17 | 2012-11-05 | 광디바이스층의 이체 장치 및 레이저 가공기 |
CN2012104680823A CN103123946A (zh) | 2011-11-17 | 2012-11-19 | 光器件层的移换装置和激光加工机 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011251358A JP2013110137A (ja) | 2011-11-17 | 2011-11-17 | 光デバイス層の移替装置およびレーザー加工機 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013110137A true JP2013110137A (ja) | 2013-06-06 |
Family
ID=48454876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011251358A Pending JP2013110137A (ja) | 2011-11-17 | 2011-11-17 | 光デバイス層の移替装置およびレーザー加工機 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2013110137A (ko) |
KR (1) | KR20130054912A (ko) |
CN (1) | CN103123946A (ko) |
TW (1) | TW201322479A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018093021A (ja) * | 2016-12-01 | 2018-06-14 | Jsr株式会社 | 対象物の処理方法、および半導体装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018098441A (ja) * | 2016-12-16 | 2018-06-21 | 株式会社ディスコ | ダイボンダー |
JP6904810B2 (ja) * | 2017-06-29 | 2021-07-21 | コマツ産機株式会社 | レーザ加工機 |
JP7109590B2 (ja) * | 2018-12-21 | 2022-07-29 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN113394077B (zh) * | 2021-06-15 | 2022-10-14 | 纬翔华创(山东)智能电子科技有限公司 | 一种led外延晶层生产工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100595A (ja) * | 2000-07-21 | 2002-04-05 | Enya Systems Ltd | ウエ−ハ剥離装置及び方法並びにこれを用いたウエ−ハ処理装置 |
JP2004079613A (ja) * | 2002-08-12 | 2004-03-11 | Disco Abrasive Syst Ltd | 半導体ウェーハ移し替え装置 |
JP2005522875A (ja) * | 2002-04-09 | 2005-07-28 | オリオール, インク. | 金属支持膜を使用した縦方向デバイスの製作方法 |
JP2009099675A (ja) * | 2007-10-15 | 2009-05-07 | Showa Denko Kk | 発光ダイオードの製造方法及び発光ダイオード、並びにランプ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100665173B1 (ko) * | 2005-04-26 | 2007-01-09 | 삼성전기주식회사 | 질화물층의 제조방법 및 이를 이용한 수직구조 질화물반도체 발광소자의 제조방법 |
-
2011
- 2011-11-17 JP JP2011251358A patent/JP2013110137A/ja active Pending
-
2012
- 2012-10-12 TW TW101137696A patent/TW201322479A/zh unknown
- 2012-11-05 KR KR1020120124089A patent/KR20130054912A/ko not_active Application Discontinuation
- 2012-11-19 CN CN2012104680823A patent/CN103123946A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100595A (ja) * | 2000-07-21 | 2002-04-05 | Enya Systems Ltd | ウエ−ハ剥離装置及び方法並びにこれを用いたウエ−ハ処理装置 |
JP2005522875A (ja) * | 2002-04-09 | 2005-07-28 | オリオール, インク. | 金属支持膜を使用した縦方向デバイスの製作方法 |
JP2004079613A (ja) * | 2002-08-12 | 2004-03-11 | Disco Abrasive Syst Ltd | 半導体ウェーハ移し替え装置 |
JP2009099675A (ja) * | 2007-10-15 | 2009-05-07 | Showa Denko Kk | 発光ダイオードの製造方法及び発光ダイオード、並びにランプ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018093021A (ja) * | 2016-12-01 | 2018-06-14 | Jsr株式会社 | 対象物の処理方法、および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201322479A (zh) | 2013-06-01 |
KR20130054912A (ko) | 2013-05-27 |
CN103123946A (zh) | 2013-05-29 |
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