CN113394077B - 一种led外延晶层生产工艺 - Google Patents
一种led外延晶层生产工艺 Download PDFInfo
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- CN113394077B CN113394077B CN202110660374.6A CN202110660374A CN113394077B CN 113394077 B CN113394077 B CN 113394077B CN 202110660374 A CN202110660374 A CN 202110660374A CN 113394077 B CN113394077 B CN 113394077B
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- reaction cylinder
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- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 130
- 239000007789 gas Substances 0.000 claims abstract description 126
- 230000007246 mechanism Effects 0.000 claims abstract description 112
- 238000003860 storage Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000009960 carding Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000000428 dust Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002912 waste gas Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 99
- 229910052710 silicon Inorganic materials 0.000 description 99
- 239000010703 silicon Substances 0.000 description 99
- 239000010410 layer Substances 0.000 description 41
- 239000003921 oil Substances 0.000 description 7
- 230000002035 prolonged effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000010720 hydraulic oil Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110660374.6A CN113394077B (zh) | 2021-06-15 | 2021-06-15 | 一种led外延晶层生产工艺 |
Applications Claiming Priority (1)
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CN202110660374.6A CN113394077B (zh) | 2021-06-15 | 2021-06-15 | 一种led外延晶层生产工艺 |
Publications (2)
Publication Number | Publication Date |
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CN113394077A CN113394077A (zh) | 2021-09-14 |
CN113394077B true CN113394077B (zh) | 2022-10-14 |
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Family Applications (1)
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CN202110660374.6A Active CN113394077B (zh) | 2021-06-15 | 2021-06-15 | 一种led外延晶层生产工艺 |
Country Status (1)
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CN (1) | CN113394077B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201322479A (zh) * | 2011-11-17 | 2013-06-01 | Disco Corp | 光元件層之轉移裝置及雷射加工機 |
CN105023976A (zh) * | 2015-06-10 | 2015-11-04 | 湘能华磊光电股份有限公司 | 一种led外延生长方法 |
CN107808916A (zh) * | 2017-10-09 | 2018-03-16 | 浙江帅康电气股份有限公司 | Led晶元及其制备方法和led灯 |
CN108257853A (zh) * | 2018-01-17 | 2018-07-06 | 马鞍山杰生半导体有限公司 | 具有氮化铝膜的紫外led的外延结构及其生长方法 |
CN111261755A (zh) * | 2020-03-19 | 2020-06-09 | 湘能华磊光电股份有限公司 | 一种led外延生长方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9147803B2 (en) * | 2013-01-02 | 2015-09-29 | Micron Technology, Inc. | Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods |
-
2021
- 2021-06-15 CN CN202110660374.6A patent/CN113394077B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201322479A (zh) * | 2011-11-17 | 2013-06-01 | Disco Corp | 光元件層之轉移裝置及雷射加工機 |
CN105023976A (zh) * | 2015-06-10 | 2015-11-04 | 湘能华磊光电股份有限公司 | 一种led外延生长方法 |
CN107808916A (zh) * | 2017-10-09 | 2018-03-16 | 浙江帅康电气股份有限公司 | Led晶元及其制备方法和led灯 |
CN108257853A (zh) * | 2018-01-17 | 2018-07-06 | 马鞍山杰生半导体有限公司 | 具有氮化铝膜的紫外led的外延结构及其生长方法 |
CN111261755A (zh) * | 2020-03-19 | 2020-06-09 | 湘能华磊光电股份有限公司 | 一种led外延生长方法 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220921 Address after: Building 1, Innovation and Entrepreneurship Industrial Park, at the intersection of Yanzhou South Road and Zhoushan Road, Beijing Road Street, Economic Development Zone, Rizhao City, Shandong Province, 276800 Applicant after: Weixiang Huachuang (Shandong) Intelligent Electronic Technology Co.,Ltd. Address before: 201401 No. 10, Lane 255, Xiaotang Road, Fengxian District, Shanghai Applicant before: Shanghai Puhui mechanical equipment Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A production process for LED epitaxial layer Effective date of registration: 20230315 Granted publication date: 20221014 Pledgee: Rizhao Donggang Rural Commercial Bank Co.,Ltd. Binhai Sub branch Pledgor: Weixiang Huachuang (Shandong) Intelligent Electronic Technology Co.,Ltd. Registration number: Y2023980034927 |