CN107808916A - Led晶元及其制备方法和led灯 - Google Patents
Led晶元及其制备方法和led灯 Download PDFInfo
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 13
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
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Abstract
本发明提供了一种LED晶元及其制备方法和LED灯。本发明提供的制备方法包括如下步骤:(1)在蓝宝石衬底上生长AlN复合基底;(2)在AlN复合基底上生长一层Al0.5Ga0.5N量子结构有源层;(3)在Al0.5Ga0.5N量子结构有源层上外延一层很薄的AlN缓冲层作为空穴阻挡层;(4)在AlN缓冲层上生长多层量子阱结构;(5)在量子阱结构上生长P型电子阻挡层;(6)在P型电子阻挡层上生长Mg‑Siδ共掺超晶格;(7)在Mg‑Siδ共掺超晶格上生长一层P+‑GaN欧姆电极盖层。其有益效果是:本发明提供的含高Al组分的AlGaN外延基片的LED晶元的制备方法,通过在蓝宝石衬底上进行AIN复合基底的生长,以有效释放生长过程中的应力,获得高质量的AlGaN外延基片。
Description
技术领域
本发明涉及一种LED晶元及其制备方法和LED灯。
背景技术
传统LED晶元制备工艺中,虽然可以通过调节发光层AlGaN材料中的Al的组分来实现深紫外线LED晶元材料的制备,但是,随着AlGaN材料中的Al组分的逐渐增大,AlGaN材料的外延生长到器件制作的难度也随之增大,具体表现为:随着Al组分的增加,外延生长过程中难以有效地控制二维生长,容易导致薄膜缺陷密度高,表面不平整,极性混杂等诸多问题。
事实上,高Al组分的AlGaN外延基片的制备是生产深紫外线LED的关键环节,制备良好的AlGaN材料直接影响LED器件的发光性能。为此,本发明致力于研究出一种高质量的高Al组分的AlGaN的外延基片,以满足稳定265-275nm的窄带紫外线辐射LED在晶元的生长和杂质的掺杂都有很高的要求的条件。
发明内容
本发明的目的在于克服现有技术的不足,提供一种薄膜缺陷密度低、表面平整的一种深紫外LED晶元及其制备方法。
本发明的一种LED晶元制备方法,其技术方案为:
一种LED晶元制备方法,其特征在于,包括如下步骤:
(1)在蓝宝石衬底上生长AlN复合基底;
(2)在AlN复合基底上生长一层Al0.5Ga0.5N量子结构有源层;
(3)在Al0.5Ga0.5N量子结构有源层上外延一层很薄的AlN缓冲层作为空穴阻挡层;
(4)在AlN缓冲层上生长多层量子阱结构;
(5)在量子阱结构上生长P型电子阻挡层;
(6)在P型电子阻挡层上生长Mg-Siδ共掺超晶格;
(7)在Mg-Siδ共掺超晶格上生长一层P+-GaN欧姆电极盖层。
本发明提供的一种LED晶元制备方法,还包括如下附属技术方案:
其中,通过金属有机物气相沉积技术在C面蓝宝石衬底上生长高Al组分的AlGaN外延基片。
其中,在生长高Al组分的AlGaN外延基片的过程中,以三甲基镓和三甲基铝作为Ⅲ族源,以氨气作为Ⅴ族源,高纯氢气作为载气。
其中,在步骤(2)中,以二茂镁和高纯硅烷分别作为量子结构有源层的p型和n型掺杂源。
其中,在步骤(4)中,生长5个周期的量子阱结构,所述量子阱结构由2nm的Al0.4Ga0.6N阱层和10nm的Al0.5Ga0.5N垒层构成。
其中,在生长高Al组分的AlGaN外延基片的界面时,中断三甲基镓和三甲基铝的通入,保持氨气源的通入。
其中,采用脉冲原子层外延技术生长高Al组分的AlGaN外延基片。
本发明还提供了一种LED晶元,其技术方案为:
一种LED晶元,其特征在于:所述LED晶元包括蓝宝石衬底、以及依次层叠在所述蓝宝石衬底上的AIN复合基底、Al0.5Ga0.5N量子结构有源层、AlN缓冲层、多层量子阱结构、P型电子阻挡层、Mg-Siδ共掺超晶格和P+-GaN欧姆电极盖层。
本发明提供的一种LED晶元,还包括如下附属技术方案。
其中,所述Al0.5Ga0.5N量子结构有源层的厚度为1.25um,所述P+-GaN欧姆电极盖层的厚度为2-3nm。
本发明还提供了一种深紫外线LED灯,所述深紫外线LED灯包括上述的高Al组分的AlGaN外延基片的LED晶元。
本发明的实施包括以下技术效果:
本发明采用金属有机物气相外延(MOVPE)技术在C面蓝宝石衬底上外延生长一系列高Al组分AlGaN基外延基片,在生长过程中,以三甲基镓(TMG)、三甲基铝(TMA)作为Ⅲ族源,氨气(NH3)作为V族源,高纯氢气(H2)作为载气。为满足AlGaN量子阱的结构和应力的要求,在蓝宝石衬底上进行AIN复合基底的生长,可以有效释放生长过程中的应力,获得高质量的AlGaN外延基片。并且在生长过程中,采用脉冲原子层外延技术,通过调节TMA和NH3源的流率,周期性交替生长,增强了AIN原子的表面迁移率,从而了降低内部应力,改善了晶体的质量;其中,界面处的生长采用中断TMG和TMA生长源,保持NH3气流,以实现平整的界面。
附图说明
图1为本发明的一种LED晶元的结构示意图。
具体实施方式
下面将结合实施例以及附图对本发明加以详细说明,需要指出的是,所描述的实施例仅旨在便于对本发明的理解,而对其不起任何限定作用。
本实施例提供的一种LED晶元制备方法,包括如下步骤:
(1)在蓝宝石衬底上生长AlN复合基底;
(2)在AlN复合基底上外延生长一层Al0.5Ga0.5N量子结构有源层;
(3)在Al0.5Ga0.5N量子结构有源层上外延一层很薄的AlN缓冲层作为空穴阻挡层;
(4)在AlN缓冲层上生长多层量子阱结构;
(5)在量子阱结构上生长P型电子阻挡层;
(6)在P型电子阻挡层上生长Mg-Siδ共掺超晶格;
(7)在Mg-Siδ共掺超晶格上生长一层P+-GaN欧姆电极盖层。
本实施例提供的一种LED晶元的制备方法,为了满足AlGaN量子阱的结构和应力的要求,在蓝宝石衬底上进行AIN复合基底的生长,可以有效释放生长过程中的应力,获得高质量的AlGaN外延基片。
其中,通过金属有机物气相沉积技术在C面蓝宝石衬底上生长高Al组分的AlGaN外延基片。
优选地,在生长高Al组分的AlGaN外延基片的过程中,以三甲基镓和三甲基铝作为Ⅲ族源,以氨气作为Ⅴ族源,高纯氢气作为载气。本实施例通过采用金属有机物气相外延(MOVPE)技术在C面蓝宝石衬底上外延生长一系列高Al组分AlGaN基外延基片,并在生长过程中,以三甲基镓(TMG)、三甲基铝(TMA)作为Ⅲ族源,氨气(NH3)作为V族源,高纯氢气(H2)作为载气;并且在生长过程中,采用脉冲原子层外延技术,通过调节TMA和NH3源的流率,周期性交替生长,增强了AIN原子的表面迁移率,从而了降低内部应力,改善了晶体的质量。
更优选地,在生长高Al组分的AlGaN外延基片的界面处时,中断三甲基镓和三甲基铝的通入,保持氨气源的通入。本实施例通过在生长高Al组分的AlGaN外延基片的界面处时,中断TMG和TMA生长源,保持NH3气流的通入,以保证界面的平整。
优选地,在步骤(2)中,以二茂镁和高纯硅烷分别作为量子结构有源层的p型和n型掺杂源;在步骤(4)中,生长5个周期的多层量子阱结构,所述量子阱结构由2nm的Al0.4Ga0.6N阱层和10nm的Al0.5Ga0.5N垒层构成。
本实施例还提供了一种含高Al组分AlGaN外延基片的LED晶元,所述LED晶元包括蓝宝石衬底1、以及依次层叠在所述蓝宝石衬底1上的AlN复合基底2、Al0.5Ga0.5N量子结构有源层3、AlN缓冲层4、多层量子阱结构5、P型电子阻挡层6、Mg-Siδ共掺超晶格7和P+-GaN欧姆电极盖层8。其中,所述Al0.5Ga0.5N量子结构有源层3的厚度为1.25um,所述P+-GaN欧姆电极盖层8的厚度为2-3nm。
本实施例还提供了一种深紫外线LED灯,所述深紫外线LED灯包括上述的高Al组分的AlGaN外延基片的LED晶元。
最后应当说明的是,以上实施例仅用以说明本发明的技术方案,而非对本发明保护范围的限制,尽管参照较佳实施例对本发明作了详细地说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的实质和范围。
Claims (10)
1.一种LED晶元制备方法,其特征在于,包括如下步骤:
(1)在蓝宝石衬底上生长AlN复合基底;
(2)在AlN复合基底上生长一层Al0.5Ga0.5N量子结构有源层;
(3)在Al0.5Ga0.5N量子结构有源层上外延一层很薄的AlN缓冲层作为空穴阻挡层;
(4)在AlN缓冲层上生长多层量子阱结构;
(5)在量子阱结构上生长P型电子阻挡层;
(6)在P型电子阻挡层上生长Mg-Siδ共掺超晶格;
(7)在Mg-Siδ共掺超晶格上生长一层P+-GaN欧姆电极盖层。
2.根据权利要求1所述的一种LED晶元制备方法,其特征在于:通过金属有机物气相沉积技术在C面蓝宝石衬底上生长高Al组分的AlGaN外延基片。
3.根据权利要求1或2所述的一种LED晶元制备方法,其特征在于:在生长高Al组分的AlGaN外延基片的过程中,以三甲基镓和三甲基铝作为Ⅲ族源,以氨气作为Ⅴ族源,高纯氢气作为载气。
4.根据权利要求1或3所述的一种LED晶元制备方法,其特征在于:在步骤(2)中,以二茂镁和高纯硅烷分别作为量子结构有源层的p型和n型掺杂源。
5.根据权利要求1所述的一种LED晶元制备方法,其特征在于:在步骤(4)中,生长5个周期的量子阱结构,所述量子阱结构由2nm的Al0.4Ga0.6N阱层和10nm的Al0.5Ga0.5N垒层构成。
6.根据权利要求1所述的一种LED晶元制备方法,其特征在于:在生长高Al组分的AlGaN外延基片的界面时,中断三甲基镓和三甲基铝的通入,保持氨气源的通入。
7.根据权利要求1或2所述的一种LED晶元的制备方法,其特征在于:采用脉冲原子层外延技术生长高Al组分的AlGaN外延基片。
8.一种LED晶元,其特征在于:所述LED晶元包括蓝宝石衬底、以及依次层叠在所述蓝宝石衬底上的AlN复合基底、Al0.5Ga0.5N量子结构有源层、AlN缓冲层、多层量子阱结构、P型电子阻挡层、Mg-Siδ共掺超晶格和P+-GaN欧姆电极盖层。
9.根据权利要求8所述的一种LED晶元,其特征在于:所述Al0.5Ga0.5N量子结构有源层的厚度为1.25um,所述P+-GaN欧姆电极盖层的厚度为2-3nm。
10.一种深紫外线LED灯,其特征在于:包括权利要求8-9任一项所述的含高Al组分的AlGaN外延基片的LED晶元。
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