JP2013105512A5 - - Google Patents

Download PDF

Info

Publication number
JP2013105512A5
JP2013105512A5 JP2011249249A JP2011249249A JP2013105512A5 JP 2013105512 A5 JP2013105512 A5 JP 2013105512A5 JP 2011249249 A JP2011249249 A JP 2011249249A JP 2011249249 A JP2011249249 A JP 2011249249A JP 2013105512 A5 JP2013105512 A5 JP 2013105512A5
Authority
JP
Japan
Prior art keywords
core chips
chip
identification information
read
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011249249A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013105512A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011249249A priority Critical patent/JP2013105512A/ja
Priority claimed from JP2011249249A external-priority patent/JP2013105512A/ja
Priority to US13/671,438 priority patent/US20130121092A1/en
Publication of JP2013105512A publication Critical patent/JP2013105512A/ja
Publication of JP2013105512A5 publication Critical patent/JP2013105512A5/ja
Pending legal-status Critical Current

Links

JP2011249249A 2011-11-15 2011-11-15 半導体装置 Pending JP2013105512A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011249249A JP2013105512A (ja) 2011-11-15 2011-11-15 半導体装置
US13/671,438 US20130121092A1 (en) 2011-11-15 2012-11-07 Semiconductor device including plural semiconductor chips stacked to one another

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011249249A JP2013105512A (ja) 2011-11-15 2011-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2013105512A JP2013105512A (ja) 2013-05-30
JP2013105512A5 true JP2013105512A5 (enExample) 2015-01-08

Family

ID=48280519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011249249A Pending JP2013105512A (ja) 2011-11-15 2011-11-15 半導体装置

Country Status (2)

Country Link
US (1) US20130121092A1 (enExample)
JP (1) JP2013105512A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5654855B2 (ja) * 2010-11-30 2015-01-14 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体装置
US20130153896A1 (en) 2011-12-19 2013-06-20 Texas Instruments Incorporated SCAN TESTABLE THROUGH SILICON VIAs
KR102092745B1 (ko) * 2013-10-24 2020-03-24 에스케이하이닉스 주식회사 반도체 장치 및 이의 테스트 방법
JP6374008B2 (ja) * 2014-09-12 2018-08-15 東芝メモリ株式会社 記憶装置
JP6736441B2 (ja) * 2016-09-28 2020-08-05 ルネサスエレクトロニクス株式会社 半導体装置
US11004477B2 (en) * 2018-07-31 2021-05-11 Micron Technology, Inc. Bank and channel structure of stacked semiconductor device
KR102579174B1 (ko) * 2018-12-24 2023-09-18 에스케이하이닉스 주식회사 적층형 메모리 장치 및 이를 포함하는 메모리 시스템
CN115842013B (zh) * 2023-02-13 2023-06-09 浙江力积存储科技有限公司 一种三维堆叠存储器及其数据处理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4419049B2 (ja) * 2003-04-21 2010-02-24 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
JP4423453B2 (ja) * 2005-05-25 2010-03-03 エルピーダメモリ株式会社 半導体記憶装置
JP4799157B2 (ja) * 2005-12-06 2011-10-26 エルピーダメモリ株式会社 積層型半導体装置
JP4828251B2 (ja) * 2006-02-22 2011-11-30 エルピーダメモリ株式会社 積層型半導体記憶装置及びその制御方法
US8904140B2 (en) * 2009-05-22 2014-12-02 Hitachi, Ltd. Semiconductor device
JP2011081732A (ja) * 2009-10-09 2011-04-21 Elpida Memory Inc 半導体装置及びその調整方法並びにデータ処理システム
JP2011082449A (ja) * 2009-10-09 2011-04-21 Elpida Memory Inc 半導体装置
JP5586915B2 (ja) * 2009-10-09 2014-09-10 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びこれを備える情報処理システム

Similar Documents

Publication Publication Date Title
JP2013105512A5 (enExample)
JP2010267373A5 (enExample)
CN105185406B (zh) 多端口非易失性存储器设备及其存取方法
JP2013131533A5 (enExample)
JP2010108585A5 (enExample)
JP2012181916A5 (enExample)
WO2013052372A3 (en) Stub minimization for multi-die wirebond assemblies with parallel windows
JP2012142562A5 (ja) 半導体装置
JP2012256837A5 (ja) 半導体装置
RU2016107392A (ru) Полупроводниковое запоминающее устройство
EP2466587A3 (en) Semiconductor storage device
ATE515034T1 (de) Gleichrichtelement für eine speicherarrayarchitektur auf crosspoint-basis
GB2522824A (en) Vertical cross-point embedded memory architecture for metal-conductive oxide-metal (MCOM) memory elements
WO2009089612A8 (en) Nonvolatile semiconductor memory device
JP2012256406A5 (ja) 記憶装置
US8817547B2 (en) Apparatuses and methods for unit identification in a master/slave memory stack
JP2008300469A (ja) 不揮発性半導体記憶装置
WO2008048504A3 (en) Semiconductor memory comprising means for switching between normal and high speed reading mode
WO2014043574A3 (en) Reference cell repair scheme
JP2010267326A5 (enExample)
US10438929B2 (en) Semiconductor device
JP2012113792A5 (enExample)
GB2571218A (en) Memory cell structure
US8848472B2 (en) Fabrication and testing method for nonvolatile memory devices
JP2009163860A5 (enExample)