JP2013083833A - レジスト下層膜形成材料及びパターン形成方法 - Google Patents
レジスト下層膜形成材料及びパターン形成方法 Download PDFInfo
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- JP2013083833A JP2013083833A JP2011224290A JP2011224290A JP2013083833A JP 2013083833 A JP2013083833 A JP 2013083833A JP 2011224290 A JP2011224290 A JP 2011224290A JP 2011224290 A JP2011224290 A JP 2011224290A JP 2013083833 A JP2013083833 A JP 2013083833A
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- DFQICHCWIIJABH-UHFFFAOYSA-N naphthalene-2,7-diol Chemical compound C1=CC(O)=CC2=CC(O)=CC=C21 DFQICHCWIIJABH-UHFFFAOYSA-N 0.000 description 1
- IZJVVXCHJIQVOL-UHFFFAOYSA-N nitro(phenyl)methanesulfonic acid Chemical class OS(=O)(=O)C([N+]([O-])=O)C1=CC=CC=C1 IZJVVXCHJIQVOL-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- FXLOVSHXALFLKQ-UHFFFAOYSA-N p-tolualdehyde Chemical compound CC1=CC=C(C=O)C=C1 FXLOVSHXALFLKQ-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229940100595 phenylacetaldehyde Drugs 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000005068 thioepoxy group Chemical group S(O*)* 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
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- H01L21/3105—After-treatment
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Abstract
Description
下記一般式(1)で示される置換又は非置換のナフトール基を有するトルクセン化合物を含有するものであることを特徴とするレジスト下層膜形成材料を提供する。
前記レジスト下層膜のエッチングにおいて、前記パターンが形成されたレジスト中間膜又は前記パターンが形成された無機ハードマスク中間膜をマスクにして前記レジスト下層膜を酸素ガス又は水素ガスを主体とするエッチングガスによりエッチングすることが好ましい。
1Lのフラスコにトルクセノン80g、2−ナフトール144g、β−メルカプトプロピオン酸4g、トルエン500gを混合し、98%硫酸10gを滴下し、50℃で10時間攪拌する事によって反応を行った。得られた反応液にトルエン100g、水30g加えて、10%水溶液のテトラメチルアンモニウムヒドロキシドをPHが7になるまで加えた後、水洗分液を5回繰り返した後、水層を除去し、ナフトールトルクセン1を得た。1H−NMR分析により構造特定を行った。
トルクセノンと2−メトキシナフタレンを反応させ、反応後メチル基を脱保護して合成した。
ナフトールトルクセン2の中間体メトキシトルクセンのヒドロキシ基を還元し水素原子にし、ナフタレンマグネシウムクロリドと反応させ、メトキシ基を脱保護して合成した。
1Lのフラスコにナフトールトルクセン3を169g、37%ホルマリン水溶液75g、シュウ酸5g、ジオキサン200gを加え、撹拌しながら100℃で24時間撹拌させた。反応後メチルイソブチルケトン500mlに溶解し、十分な水洗により触媒と金属不純物を除去し、溶媒を減圧除去し、150℃、2mmHgまで減圧し、水分、未反応モノマーを除き下記に示すポリマー1を得た。
300mlのフラスコにフルオレンビスフェノール200g、37%ホルマリン水溶液75g、シュウ酸5gを加え、撹拌しながら100℃で24時間撹拌させた。反応後メチルイソブチルケトン500mlに溶解し、十分な水洗により触媒と金属不純物を除去し、溶媒を減圧除去し、150℃、2mmHgまで減圧し、水分、未反応モノマーを除き、135gの下記に示す比較ポリマー1を得た。
表1に示すようにナフトールトルクセン1〜4、トルクセンノボラックポリマー1、比較ポリマー1〜3、比較モノマー1〜4、及び後述するArF珪素含有中間膜ポリマー、ブレンドポリマー1〜2、AG1で示される酸発生剤、CR1で示される架橋剤を、FC−4430(住友スリーエム(株)製)0.1質量%を含む溶媒中に表1に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによってレジスト下層膜溶液(UDL−1〜8、比較UDL−1〜7)とレジスト中間膜溶液(SOG−1)をそれぞれ調製した。
上記のように調整したレジスト下層膜溶液(UDL−1〜8、比較UDL−1〜7)をシリコン基板上に塗布して、UDL−1〜8、比較UDL−1、4〜7は350℃で60秒間ベークし、比較UDL−2、3、SOG−1は230℃で60秒間ベークし、それぞれ膜厚200nmの下層膜、膜厚35nmのSOG膜を形成した。J.A.ウーラム社の入射角度可変の分光エリプソメーター(VASE)で波長193nmにおけるUDL1〜7、比較UDL−1〜8、SOG−1の屈折率(n,k)を求め、結果を表1に示した。
UDL−1〜8、比較UDL−1〜7をシリコン基板上に塗布して、大気中下で表2に示す温度でそれぞれ60秒間ベークして膜厚を測定し、その上にPGMEA溶液をディスペンスし、30秒間放置しスピンドライ、更に100℃で60秒間ベークしてPGMEAを蒸発させ、膜厚を測定しPGMEA処理前後の膜厚差を求めた。結果を表2に示した。
東京エレクトロン製エッチング装置TE−8500を用いてエッチング前後の膜減りを求めた。エッチング条件は下記に示す通りである。
チャンバー圧力 40.0Pa
RFパワー 1,300W
CHF3ガス流量 30ml/min
CF4ガス流量 30ml/min
Arガス流量 100ml/min
時間 60sec
下層膜形成材料の溶液(UDL−1〜8、比較UDL−1〜7)を、膜厚200nmのSiO2膜が形成された300mmSiウェハー基板上に塗布して、実施例4−1〜8、比較例4−1、4〜7は350℃で60秒間ベークして膜厚200nmの下層膜を形成した。比較例4−2、3では230℃で60秒間ベークして膜厚200nmの下層膜を形成した。尚、下層膜のベーク雰囲気は空気中で行った。
レジストパターンのSOG膜への転写条件:
チャンバー圧力 10.0Pa
RFパワー 1,500W
CF4ガス流量 15sccm
O2ガス流量 75sccm
時間 15sec
チャンバー圧力 2.0Pa
RFパワー 500W
Arガス流量 75sccm
O2ガス流量 45sccm
時間 120sec
チャンバー圧力 2.0Pa
RFパワー 2,200W
C5F12ガス流量 20sccm
C2F6ガス流量 10sccm
Arガス流量 300sccm
O2 60sccm
時間 90sec
UDL−1、UDL−6と比較UDL−4〜7をSi基盤上に塗布し、350℃で60秒間ベークし、膜厚200nmの下層膜を形成できる条件で、350℃ベーク中にホットプレートオーブン中に発生するパーティクルをリオン社製パーティクルカウンターKR−11Aを用いて0.3ミクロンと0.5ミクロンサイズのパーティクル数を測定した。結果を表7に示す。
ナフトールトルクセン2の中間体メトキシトルクセンのヒドロキシ基を還元し水素原子にし、ナフタレンマグネシウムクロリドと反応させ、メトキシ基を脱保護して合成し
Claims (8)
- 基板にレジスト下層膜形成材料によりレジスト下層膜を形成し、少なくとも該レジスト下層膜の上にフォトレジスト組成物によりレジスト上層膜を形成し、該レジスト上層膜に露光及び現像を行ってパターンを形成した後、該レジスト上層膜に形成されたパターンを前記レジスト下層膜に転写して、更に該レジスト下層膜に転写されたパターンを前記基板に転写することにより前記基板にパターンを形成する方法において用いる前記レジスト下層膜形成材料であって、
下記一般式(1)で示される置換又は非置換のナフトール基を有するトルクセン化合物を含有するものであることを特徴とするレジスト下層膜形成材料。
- 更に、有機溶剤を含有するものであることを特徴とする請求項1に記載のレジスト下層膜形成材料。
- 更に、架橋剤及び酸発生剤を含有するものであることを特徴とする請求項1又は請求項2に記載のレジスト下層膜形成材料。
- リソグラフィーにより基板にパターンを形成する方法であって、少なくとも、前記基板上に請求項1乃至請求項3のいずれか1項に記載のレジスト下層膜形成材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上に珪素原子を含有するレジスト中間膜材料を用いてレジスト中間膜を形成し、該レジスト中間膜の上にフォトレジスト組成物であるレジスト上層膜材料を用いてレジスト上層膜を形成して、該レジスト上層膜のパターン回路領域を露光した後、現像液で現像して前記レジスト上層膜にレジストパターンを形成し、該レジストパターンが形成されたレジスト上層膜をマスクにして前記レジスト中間膜をエッチングしてパターンを形成し、該パターンが形成されたレジスト中間膜をマスクにして前記レジスト下層膜をエッチングしてパターンを形成し、さらに、該パターンが形成されたレジスト下層膜をマスクにして前記基板をエッチングして前記基板にパターンを形成することを特徴とするパターン形成方法。
- リソグラフィーにより基板にパターンを形成する方法であって、少なくとも、前記基板上に請求項1乃至請求項3のいずれか1項に記載のレジスト下層膜形成材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上に珪素酸化膜、珪素窒化膜、及び珪素酸化窒化膜のいずれかからなる無機ハードマスク中間膜を形成し、該無機ハードマスク中間膜の上にフォトレジスト組成物であるレジスト上層膜材料を用いてレジスト上層膜を形成して、該レジスト上層膜のパターン回路領域を露光した後、現像液で現像して前記レジスト上層膜にレジストパターンを形成し、該レジストパターンが形成されたレジスト上層膜をマスクにして前記無機ハードマスク中間膜をエッチングしてパターンを形成し、該パターンが形成された無機ハードマスク中間膜をマスクにして前記レジスト下層膜をエッチングしてパターンを形成し、さらに、該パターンが形成されたレジスト下層膜をマスクにして前記基板をエッチングして前記基板にパターンを形成することを特徴とするパターン形成方法。
- リソグラフィーにより基板にパターンを形成する方法であって、少なくとも、前記基板上に請求項1乃至請求項3のいずれか1項に記載のレジスト下層膜形成材料を用いてレジスト下層膜を形成し、該レジスト下層膜の上に珪素酸化膜、珪素窒化膜、及び珪素酸化窒化膜のいずれかからなる無機ハードマスク中間膜を形成し、該無機ハードマスク中間膜の上に有機反射防止膜(BARC)を形成し、該BARC上にフォトレジスト組成物であるレジスト上層膜材料を用いてレジスト上層膜を形成して4層レジスト膜とし、前記レジスト上層膜のパターン回路領域を露光した後、現像液で現像して前記レジスト上層膜にレジストパターンを形成し、該レジストパターンが形成されたレジスト上層膜をマスクにして前記BARC膜及び前記無機ハードマスク中間膜をエッチングして前記無機ハードマスク中間膜にパターンを形成し、該パターンが形成された無機ハードマスク中間膜をマスクにして前記レジスト下層膜をエッチングしてパターンを形成し、さらに、該パターンが形成されたレジスト下層膜をマスクにして前記基板をエッチングして前記基板にパターンを形成することを特徴とするパターン形成方法。
- 前記無機ハードマスク中間膜の形成において、CVD法又はALD法により、前記珪素酸化膜、珪素窒化膜、及び珪素酸化窒化膜のいずれかからなる前記無機ハードマスク中間膜を形成することを特徴とする請求項5又は請求項6に記載のパターン形成方法。
- 前記レジスト上層膜の形成において、珪素原子を含有するポリマーを含まない前記フォトレジスト組成物である前記レジスト上層膜材料を用いて前記レジスト上層膜を形成し、
前記レジスト下層膜のエッチングにおいて、前記パターンが形成されたレジスト中間膜又は前記パターンが形成された無機ハードマスク中間膜をマスクにして前記レジスト下層膜を酸素ガス又は水素ガスを主体とするエッチングガスによりエッチングすることを特徴とする請求項5乃至請求項7のいずれか1項に記載のパターン形成方法。
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