JP2013080551A - 短絡比が調整された装置およびセンサならびに短絡比を調整する方法 - Google Patents
短絡比が調整された装置およびセンサならびに短絡比を調整する方法 Download PDFInfo
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- JP2013080551A JP2013080551A JP2012199386A JP2012199386A JP2013080551A JP 2013080551 A JP2013080551 A JP 2013080551A JP 2012199386 A JP2012199386 A JP 2012199386A JP 2012199386 A JP2012199386 A JP 2012199386A JP 2013080551 A JP2013080551 A JP 2013080551A
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- 238000000034 method Methods 0.000 title claims description 12
- 230000005415 magnetization Effects 0.000 claims description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 239000000463 material Substances 0.000 description 15
- 230000007704 transition Effects 0.000 description 14
- 238000013500 data storage Methods 0.000 description 7
- 230000001629 suppression Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
【解決手段】空気ベアリング面(ABS)148に対して設置されたデータ読み取りスタック132は、第1のバッファ層142と第2のバッファ層142との間に取り付けられ、少なくとも一方のバッファ層は、データ読み取りスタックに所定の短絡比を付与する。
【選択図】図2
Description
概要
データ読み取りスタックは、空気ベアリング面(ABS)に対して設置することができる。データ読み取りスタックは、第1のバッファ層と第2のバッファ層との間に配置され得て、少なくとも一方のバッファ層は、データ読み取りスタックに所定の短絡比を付与するように構成される。
本開示においては、改良された磁気センサが概して示され、特に、遮蔽された磁気センサにおける短絡比の最適化について示される。データの大容量化およびデータ転送率の高速化に対する需要が産業において高まるにつれ、読み取り素子やシールドなどの様々なデータ記憶部品のフォームファクタが縮小されている。読み取り素子のための空間の大きさを縮小することによって、磁気シールドの大きさおよびシールド間の利用可能な空間の大きさを最小化することができる。
Claims (20)
- 装置であって、
空気ベアリング面(ABS)に対して位置付けられ、第1のバッファ層と第2のバッファ層との間に配置されたデータ読み取りスタックを備え、バッファ層は、データ読み取りスタックに所定の短絡比を付与するように構成されている、装置。 - データ読み取りスタックならびに第1および第2のバッファ層は、第1の磁気シールドと第2の磁気シールドとの間に配置される、請求項1に記載の装置。
- 少なくとも一方のシールドは、ABSの遠位に傾斜部分を有する、請求項2に記載の装置。
- 傾斜部分は、ABSに平行な軸に沿った第1のシールドと第2のシールドの間の距離を増大させる、請求項3に記載の装置。
- データ読み取りスタックは、非磁性スペーサ層によって分離された複数の磁化自由層を有する三層要素である、請求項1に記載の装置。
- 永久バイアス磁石は、第1のシールドと第2のシールドの間において、傾斜部分の近位であってABSの遠位に実質的に配置される、請求項5に記載の装置。
- 少なくとも一方のバッファ層は、データ読み取りスタックのストライプ高さに沿った、連続して変化する厚さを有する、請求項1に記載の装置。
- 少なくとも一方のバッファ層は、絶縁材である、請求項1に記載の装置。
- 所定の短絡比は、所定の範囲内から選択される、請求項1に記載の装置。
- 所定の範囲は、0.35と0.75との間である、請求項1に記載の装置。
- 少なくとも一方のバッファ層は、データ読み取りスタックよりも大きい抵抗性を有する、請求項1に記載の装置。
- 方法であって、第1のバッファ層と第2のバッファ層との間において空気ベアリング面(ABS)に対してデータ読み取りスタックを設置するステップと、データ読み取りスタックに所定の短絡比を付与するようにバッファ層を構成するステップとを備える、方法。
- 所定の短絡比は、データ読み取りスタックにおいてデータ読み出し振幅を増大させる、請求項12に記載の方法。
- 所定の短絡比は、少なくとも一方のバッファ層の厚さおよび伝導性を最適化することによって調整される、請求項12に記載の方法。
- センサであって、空気ベアリング面(ABS)に対して位置付けられ、第1のバッファ層と第2のバッファ層との間に配置されるデータ読み取りスタックを備え、バッファ層の各々は、データ読み取りスタックに所定の短絡比を付与するように調整される第1の領域と第2の領域とによって構成される、センサ。
- 少なくとも一方のバッファ層の第1の領域および第2の領域は、それぞれ接触して隣接する磁気シールドの段差および傾斜領域とそれぞれ接触し、段差領域はABSの近位にあり、傾斜領域はABSの遠位にある、請求項15に記載のセンサ。
- 第1の領域は、第1の厚さを有し、第1の厚さは第2の領域の第2の厚さよりも小さい、請求項16に記載の装置。
- 第1の領域は、第1の厚さを有し、第1の厚さは第2の領域の第2の厚さよりも大きい、請求項16に記載のセンサ。
- 第1の領域は、第2の領域よりも高い伝導性を有する、請求項16に記載のセンサ。
- 第1の領域はルテニウムであり、第2の領域は酸化タンタルである、請求項16に記載のセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/231,414 US8749924B2 (en) | 2011-09-13 | 2011-09-13 | Tuned shunt ratio for magnetic sensors |
US13/231,414 | 2011-09-13 |
Publications (3)
Publication Number | Publication Date |
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JP2013080551A true JP2013080551A (ja) | 2013-05-02 |
JP2013080551A5 JP2013080551A5 (ja) | 2013-06-13 |
JP5793482B2 JP5793482B2 (ja) | 2015-10-14 |
Family
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JP2012199386A Expired - Fee Related JP5793482B2 (ja) | 2011-09-13 | 2012-09-11 | 短絡比が調整された装置およびセンサならびに短絡比を調整する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8749924B2 (ja) |
JP (1) | JP5793482B2 (ja) |
KR (1) | KR101389495B1 (ja) |
CN (1) | CN102997938B (ja) |
Families Citing this family (5)
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US8896971B2 (en) * | 2012-08-21 | 2014-11-25 | Seagate Technology Llc | Aligned magnetic insulating feature |
US9070382B2 (en) * | 2013-02-01 | 2015-06-30 | Seagate Technology Llc | Side shield pedestal for data readers |
US20140218821A1 (en) | 2013-02-07 | 2014-08-07 | Seagate Technology Llc | Data reader with magnetic seed lamination |
US20150092303A1 (en) * | 2013-10-01 | 2015-04-02 | HGST Netherlands B.V. | Graded side shield gap reader |
US11532324B2 (en) * | 2020-10-13 | 2022-12-20 | Western Digital Technologies, Inc. | Vertical junction to provide optimal transverse bias for dual free layer read heads |
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- 2012-09-12 CN CN201210337195.XA patent/CN102997938B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US20130065084A1 (en) | 2013-03-14 |
CN102997938B (zh) | 2015-10-21 |
KR20130029029A (ko) | 2013-03-21 |
US8749924B2 (en) | 2014-06-10 |
CN102997938A (zh) | 2013-03-27 |
KR101389495B1 (ko) | 2014-04-25 |
JP5793482B2 (ja) | 2015-10-14 |
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