JP5883752B2 - 磁気センサ、磁気積層および方法 - Google Patents
磁気センサ、磁気積層および方法 Download PDFInfo
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- JP5883752B2 JP5883752B2 JP2012206822A JP2012206822A JP5883752B2 JP 5883752 B2 JP5883752 B2 JP 5883752B2 JP 2012206822 A JP2012206822 A JP 2012206822A JP 2012206822 A JP2012206822 A JP 2012206822A JP 5883752 B2 JP5883752 B2 JP 5883752B2
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
Claims (17)
- 第1の強磁性自由層と第2の強磁性自由層との間に配置されたスペーサ層の磁気応答積層を備え、少なくとも1つの強磁性自由層は第1の結合サブ層と前記第1の結合サブ層と異なる磁気歪を有する第2の結合サブ層とを有し、前記第1の結合サブ層と前記第2の結合サブ層とは磁気抵抗比(MR)を向上させるともに前記少なくとも1つの強磁性自由層の磁気歪を減少させるものであり、磁気抵抗比(MR)を向上させるように、前記第1の強磁性自由層は、前記第2の強磁性自由層の第2厚みと異なる第1厚みを有する、磁気センサ。
- 第1および第2の強磁性自由層は、各々、前記第1および第2の結合サブ層を有する、請求項1に記載の磁気センサ。
- 前記磁気応答積層は減結合層間に配置される、請求項1または2に記載の磁気センサ。
- 前記各減結合層はタンタルである、請求項3に記載の磁気センサ。
- 前記第1および第2の結合サブ層のいずれかはFeCoZrTaを有する、請求項1から4のいずれかに記載の磁気センサ。
- 前記第1および第2の結合サブ層のいずれかはNiFeを有する、請求項1から4のいずれかに記載の磁気センサ。
- 前記第1および第2の強磁性自由層は、各々、CoFeB合金を有する、請求項1から
6のいずれかに記載の磁気センサ。 - 前記第1および第2の結合サブ層の間に、前記第1および第2の結合サブ層の結晶学的な組織を隔離する層が配置される、請求項1から7のいずれかに記載の磁気センサ。
- 前記第1および第2の結合サブ層の結晶学的な組織を隔離する前記層は、タンタルである、請求項8に記載の磁気センサ。
- 前記少なくとも1つの強磁性自由層は、磁性層として前記第1の結合サブ層及び前記第2の結合サブ層のみを有し、かつ、前記前記第1の結合サブ層は前記第2の結合サブ層に接する、請求項1から7のいずれか1項に記載の磁気センサ。
- 前記第1および第2の結合サブ層を含む前記少なくとも1つの強磁性自由層は、実質的に0の正味磁気歪を有する、請求項1から10のいずれかに記載の磁気センサ。
- 第1の強磁性自由層と、第2の強磁性自由層と、前記第1の強磁性自由層と前記第2の強磁性自由層との間に配置されたスペーサ層とを備え、
少なくとも1つの前記第1及び第2の強磁性自由層は、第1の結合サブ層と、前記第1の結合サブ層と異なる磁気歪を有する第2の結合サブ層とを有し、
前記第1の結合サブ層と前記第2の結合サブ層とは、磁気抵抗比(MR)を向上させるともに、前記少なくとも1つの強磁性自由層の磁気歪を減少させるものであり、磁気抵抗比(MR)を向上させるように、前記第1の強磁性自由層は、前記第2の強磁性自由層の第2厚みと異なる第1厚みを有する、磁気積層。 - 前記第1および第2の結合サブ層の間に、前記第1および第2の結合サブ層の結晶学的な組織を隔離する層をさらに備える、請求項12に記載の磁気積層。
- 前記第1および第2の結合サブ層の結晶学的な組織を隔離する前記層は、タンタルである、請求項13に記載の磁気積層。
- 前記少なくとも1つの強磁性自由層は、磁性層として前記第1の結合サブ層及び前記第2の結合サブ層のみを有し、かつ、前記前記第1の結合サブ層は前記第2の結合サブ層に接する、請求項12に記載の磁気積層。
- 第1の強磁性自由層と第2の強磁性自由層との間にスペーサ層を形成することによって、磁気応答積層を構築するステップと;
少なくとも1つの強磁性自由層の中に第1の結合サブ層と前記第1の結合サブ層と異なる磁気歪を有する第2の結合サブ層とを位置決めすることによって、前記磁気応答積層の磁気抵抗比(MR)を向上させるとともに、前記少なくとも1つの強磁性自由層の磁気歪を減少させるステップとを含み、
磁気抵抗比(MR)を向上させるように、前記第1の強磁性自由層は、前記第2の強磁性自由層の第2厚みと異なる第1厚みを有する、方法。 - 前記少なくとも1つの結合サブ層は、前記少なくとも1つの強磁性自由層で実質的に0の正味磁気歪を生じさせる、請求項16に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/238,981 US8503135B2 (en) | 2011-09-21 | 2011-09-21 | Magnetic sensor with enhanced magnetoresistance ratio |
US13/238,981 | 2011-09-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013070054A JP2013070054A (ja) | 2013-04-18 |
JP5883752B2 true JP5883752B2 (ja) | 2016-03-15 |
Family
ID=47880932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012206822A Expired - Fee Related JP5883752B2 (ja) | 2011-09-21 | 2012-09-20 | 磁気センサ、磁気積層および方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8503135B2 (ja) |
JP (1) | JP5883752B2 (ja) |
KR (1) | KR101371558B1 (ja) |
CN (1) | CN103021423B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8971161B2 (en) | 2013-06-24 | 2015-03-03 | Seagate Technology Llc | Devices including at least one adhesion layer and methods of forming adhesion layers |
CN104485119B (zh) * | 2013-06-24 | 2018-09-21 | 希捷科技有限公司 | 包括至少一个粘合层的装置和形成粘合层的方法 |
US9620150B2 (en) * | 2014-11-11 | 2017-04-11 | Seagate Technology Llc | Devices including an amorphous gas barrier layer |
US10522173B1 (en) | 2018-06-13 | 2019-12-31 | Headway Technologies, Inc. | Magnetic read head structure with improved bottom shield design for better reader performance |
US10714131B1 (en) | 2019-02-14 | 2020-07-14 | Headway Technologies, Inc. | Unified dual free layer reader with shared reference layer to enable reduced reader-to-reader separation |
CN113449834A (zh) * | 2020-03-26 | 2021-09-28 | 希捷科技有限公司 | 具有多层合成铁磁体自由层的读取器 |
US11380355B2 (en) | 2020-10-27 | 2022-07-05 | Headway Technologies, Inc. | Adaptive bias control for magnetic recording head |
WO2024034206A1 (ja) * | 2022-08-09 | 2024-02-15 | 国立研究開発法人物質・材料研究機構 | 磁気接合体、tmr素子、tmr素子アレイ、磁気センサ、リニアエンコーダ用磁気センサ及び磁気式ロータリーエンコーダ |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6275363B1 (en) * | 1999-07-23 | 2001-08-14 | International Business Machines Corporation | Read head with dual tunnel junction sensor |
JP2003526911A (ja) * | 2000-03-09 | 2003-09-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 結合層を備える磁気装置並びにそのような装置を製造及び作動させる方法 |
JP3417403B2 (ja) * | 2000-06-02 | 2003-06-16 | ティーディーケイ株式会社 | 磁気抵抗効果センサ、該センサを備えた薄膜磁気ヘッド、該センサの製造方法及び該ヘッドの製造方法 |
WO2002015172A1 (en) | 2000-08-15 | 2002-02-21 | Seagate Technology Llc | A magnetic head |
US6885527B1 (en) * | 2000-10-26 | 2005-04-26 | Headway Technologies, Inc. | Process to manufacture a top spin valve |
US6888703B2 (en) | 2001-09-17 | 2005-05-03 | Headway Technologies, Inc. | Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads |
JP2003203314A (ja) | 2001-09-17 | 2003-07-18 | Headway Technologies Inc | スピンバルブ型磁気抵抗効果再生ヘッドおよびその製造方法 |
KR100954970B1 (ko) | 2001-10-12 | 2010-04-29 | 소니 주식회사 | 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법 |
US6674617B2 (en) | 2002-03-07 | 2004-01-06 | International Business Machines Corporation | Tunnel junction sensor with a multilayer free-layer structure |
US6822838B2 (en) * | 2002-04-02 | 2004-11-23 | International Business Machines Corporation | Dual magnetic tunnel junction sensor with a longitudinal bias stack |
US6870716B2 (en) | 2002-09-24 | 2005-03-22 | Hitachi Global Storage Technologies Netherland B.V. | Free layer and design for higher areal density |
US7283333B2 (en) * | 2004-02-11 | 2007-10-16 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned double tunnel junction head |
US7180716B2 (en) * | 2004-03-30 | 2007-02-20 | Headway Technologies, Inc. | Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head |
US7320170B2 (en) * | 2004-04-20 | 2008-01-22 | Headway Technologies, Inc. | Xenon ion beam to improve track width definition |
JP2005051251A (ja) * | 2004-08-20 | 2005-02-24 | Alps Electric Co Ltd | 磁気検出素子 |
JP4292128B2 (ja) | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
US7369376B2 (en) * | 2005-03-15 | 2008-05-06 | Headway Technologies, Inc. | Amorphous layers in a magnetic tunnel junction device |
JP4533807B2 (ja) | 2005-06-23 | 2010-09-01 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
US7497007B2 (en) | 2005-07-14 | 2009-03-03 | Headway Technologies, Inc. | Process of manufacturing a TMR device |
US7333306B2 (en) | 2005-08-23 | 2008-02-19 | Headway Technologies, Inc. | Magnetoresistive spin valve sensor with tri-layer free layer |
JP2007095750A (ja) | 2005-09-27 | 2007-04-12 | Canon Anelva Corp | 磁気抵抗効果素子 |
US7800868B2 (en) * | 2005-12-16 | 2010-09-21 | Seagate Technology Llc | Magnetic sensing device including a sense enhancing layer |
JP5247002B2 (ja) * | 2006-02-14 | 2013-07-24 | エイチジーエスティーネザーランドビーブイ | 磁気抵抗効果型ヘッドの製造方法 |
JP2008060275A (ja) * | 2006-08-30 | 2008-03-13 | Tdk Corp | トンネル型磁気検出素子およびその製造方法 |
KR20100007884A (ko) * | 2007-06-19 | 2010-01-22 | 캐논 아네르바 가부시키가이샤 | 터널 자기 저항 박막 및 자성 다층막 제작 장치 |
FR2924851B1 (fr) | 2007-12-05 | 2009-11-20 | Commissariat Energie Atomique | Element magnetique a ecriture assistee thermiquement. |
US20090174971A1 (en) * | 2008-01-03 | 2009-07-09 | Yoshihiro Tsuchiya | Cpp-type magneto resistive effect element having a pair of magnetic layers |
US7999336B2 (en) * | 2008-04-24 | 2011-08-16 | Seagate Technology Llc | ST-RAM magnetic element configurations to reduce switching current |
US7961438B2 (en) * | 2008-05-28 | 2011-06-14 | Tdk Corporation | Magnetoresistive device of the CPP type, and magnetic disk system |
JP2010080806A (ja) | 2008-09-29 | 2010-04-08 | Canon Anelva Corp | 磁気抵抗素子の製造法及びその記憶媒体 |
JP2010109319A (ja) * | 2008-09-30 | 2010-05-13 | Canon Anelva Corp | 磁気抵抗素子の製造法および記憶媒体 |
-
2011
- 2011-09-21 US US13/238,981 patent/US8503135B2/en active Active
-
2012
- 2012-09-20 JP JP2012206822A patent/JP5883752B2/ja not_active Expired - Fee Related
- 2012-09-21 KR KR1020120105072A patent/KR101371558B1/ko active IP Right Grant
- 2012-09-21 CN CN201210478642.3A patent/CN103021423B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20130071691A1 (en) | 2013-03-21 |
KR20130031806A (ko) | 2013-03-29 |
KR101371558B1 (ko) | 2014-03-07 |
US8503135B2 (en) | 2013-08-06 |
CN103021423B (zh) | 2016-05-04 |
JP2013070054A (ja) | 2013-04-18 |
CN103021423A (zh) | 2013-04-03 |
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