JP2013058739A - Optical semiconductor device lead frame, optical semiconductor device lead frame with resin, optical semiconductor device, and optical semiconductor device lead frame manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device lead frame, an optical semiconductor device lead frame with a resin, an optical semiconductor device and an optical semiconductor device lead frame manufacturing method, which can prevent detachment of a resin due to a peel force in a vertical direction occurring in the optical semiconductor device lead frame used for a resin-molding optical semiconductor device in which a plurality of terminal parts each integrally having an internal terminal on a surface side and an external terminal on a rear face side of a metal substrate are arranged on one plane electrically independent of each other, and the internal terminals of the terminal parts and terminals of an optical semiconductor element are electrically connected, and a whole is resin-molded such that the rear face of the terminal part is exposed on the outside.SOLUTION: The above-described problem is solved by forming recesses that improves adhesion with a resin on a surface side of an optical semiconductor device lead frame such that the inside of the recess is wider than the opening of the recess.

Description

  The present invention relates to a lead frame for an optical semiconductor device on which an optical semiconductor element such as an LED is mounted, a lead frame for an optical semiconductor device with resin, an optical semiconductor device, and a method for manufacturing a lead frame for an optical semiconductor device.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources are used in various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of these lighting devices include an optical semiconductor device having a lead frame having a terminal portion insulated from each other and an LED element.

  As such an optical semiconductor device, for example, Patent Document 1 discloses a PLCC (Plastic leaded chip carrier) type optical semiconductor device. In Patent Document 1, a PLCC type optical semiconductor device has a structure that holds a lead frame and a dome-shaped capsule material that seals an LED element.

  Here, in general, a light-transmitting resin that transmits light emitted from the LED element is used as a material for sealing the LED element, and the outer periphery thereof is light-reflective in order to improve the light emission efficiency of the optical semiconductor device. Resin is formed.

JP 2007-49167 A

  In recent years, there has been a demand for further downsizing and thinning of optical semiconductor devices including LED elements. Therefore, a structure (so-called bottom mounting structure) in which the terminal portion of the surface (back surface) opposite to the surface (front surface) on which the LED element of the lead frame is placed is exposed as an external terminal from the resin and mounted on the external substrate. ) Optical semiconductor devices have been used.

  In such a small and thin optical semiconductor device, for example, the resin is formed only on the front and side surfaces of the terminal portion and not on the back surface of the terminal portion, so that the contact area between the resin and the lead frame is reduced. In order to prevent the resin from detaching due to this, a fine concave portion is formed on the surface of the lead frame to improve the adhesion.

  However, the cross-sectional shape of the above-described recess has conventionally been substantially semicircular or substantially V-shaped, and the opening is wider than the inside, so that the peeling force in the vertical direction (Z direction) is particularly high. There was a problem that the resin was weak and easily detached.

  The present invention has been made in view of the above circumstances, and can lead to the peeling force in the vertical direction (Z direction) as described above, and can further prevent the resin from being detached. An object of the present invention is to provide a lead frame for an optical semiconductor device with resin, an optical semiconductor device, and a method for manufacturing a lead frame for an optical semiconductor device.

  As a result of various studies, the present inventor has formed a recess for improving the adhesion to the resin on the surface side of the lead frame for an optical semiconductor device as described above, and the inside of the recess is more than the opening thereof. The present invention has been completed by finding that the above-mentioned problems can be solved by forming it widely.

  The present invention provides an optical semiconductor device lead frame used in a resin-encapsulated optical semiconductor device, and includes a plurality of terminal portions including internal terminals located on the front surface side and external terminals located on the back surface side, A concave portion having an opening is formed on the surface side of the terminal portion, and in a plan view, the width of the concave portion is wider than the width of the opening, and the concave portion is a C-shape that opens upward. An optical semiconductor device lead frame having a cross-section.

  The present invention is the lead frame for an optical semiconductor device, wherein the recess has an overhang shape in which an edge of the opening of the recess protrudes inward from the inside of the recess.

  In the present invention, a plating layer is formed on the inner surface of the recess and the opening edge of the recess, and the plating layer formed on the opening edge of the recess is formed on the inner surface of the recess. A lead frame for an optical semiconductor device, wherein the lead frame is formed thicker than the plated layer.

  Further, the invention is characterized in that the recess is formed along at least a part of the outer periphery of the terminal portion, and the recess is formed in an arc shape in plan view at a corner portion of the terminal portion. It is a lead frame for a semiconductor device.

  The present invention is the lead frame for an optical semiconductor device, wherein the depth of the recess is larger than the width of the opening of the recess.

  According to the present invention, in the lead frame for an optical semiconductor device, the depth of the recess is 1/2 to ¾ of the thickness of the metal substrate constituting the lead frame for the optical semiconductor device. is there.

  The present invention is the lead frame for an optical semiconductor device, characterized in that a connecting portion that is thinned from the back surface side is provided in the vicinity of the outside of the concave portion on the front surface side of the terminal portion.

  According to another aspect of the present invention, there is provided a lead frame for an optical semiconductor device with a resin, comprising: a lead frame for an optical semiconductor device; and a light reflective resin that reflects light emitted from the optical semiconductor element.

  The present invention is the lead frame for an optical semiconductor device with a resin, wherein the light reflecting resin is formed on at least a part of the recess.

  The present invention also provides a lead frame for an optical semiconductor device, an optical semiconductor element placed on the surface of the lead frame for an optical semiconductor device, and the light emitted from at least the optical semiconductor element by sealing the optical semiconductor element. And a translucent resin that transmits part of the optical semiconductor device.

  The present invention is also an optical semiconductor device characterized in that a light-reflective resin that reflects light emitted from the optical semiconductor element is provided so as to surround the light-transmitting resin in plan view.

  The present invention is the optical semiconductor device, wherein the translucent resin is formed on at least a part of the recess.

  Moreover, the present invention is the optical semiconductor device, wherein the light reflecting resin is formed on at least a part of the recess.

  The present invention is also used in a resin-encapsulated optical semiconductor device, and includes a plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side. And a step of preparing a metal substrate, a step of forming a resist pattern on each of the front and back surfaces of the metal substrate, and etching the front and back surfaces of the metal substrate using the resist pattern as an etching resistant film. And a step of forming an electrolytic plating layer on at least a part of the surface of the metal substrate, and in the step of performing the etching, the terminal portion is formed by through etching from the front surface side and the back surface side of the metal substrate. In the plan view, the inner width is larger than the width of the opening on the surface side of the terminal portion by half etching from the surface side of the metal substrate. Ku, and a method of manufacturing an optical semiconductor device lead frame and forming a recess having a C-shaped cross section upwardly open.

  The optical semiconductor according to the invention is characterized in that, in the step of performing the etching, a thinned connection portion is formed by half etching from the back surface side in the vicinity of the outside of the concave portion on the front surface side of the terminal portion. It is a manufacturing method of an apparatus lead frame.

  Further, in the step of forming the electrolytic plating layer, the present invention provides the electrolytic plating layer formed on the opening edge of the recess by arranging an anode electrode substantially parallel to the surface of the terminal portion. A method of manufacturing a lead frame for an optical semiconductor device, wherein the lead frame is formed thicker than the electrolytic plating layer formed on the inner surface of the recess.

  According to the present invention, the recess for improving the adhesion between the lead frame for an optical semiconductor device and the resin is formed on the surface of the lead frame for the optical semiconductor device, and the inside of the recess is formed wider than the opening. Therefore, even if the resin formed inside the concave portion receives a peeling force in the vertical direction (Z direction) of the concave portion, the opening of the concave portion is narrower than the inside thereof. It becomes difficult to detach from the frame. Therefore, according to the present invention, it is possible to more effectively prevent the resin from being detached from the lead frame for an optical semiconductor device.

It is a top view which shows an example of the flat form of the lead frame for optical semiconductor devices which concerns on this invention. It is the elements on larger scale of the R area | region in FIG. It is explanatory drawing which shows an example of the package area | region of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is AA sectional drawing of (a). It is an expanded sectional view for demonstrating the recessed part of the lead frame for optical semiconductor devices which concerns on this invention. It is a figure explaining the example of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view of a package area | region, (b) is an enlarged view of a corner part. It is a top view which shows the other example of the lead frame for optical semiconductor devices which concerns on this invention. It is a figure explaining the other form of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is BB sectional drawing of (a), (c) is (a). It is CC sectional drawing. It is a figure explaining the vicinity area | region of the connection part of the lead frame for optical semiconductor devices which concerns on this invention of the form shown in FIG. FIG. 9 is a plan view showing another example of the lead frame for optical semiconductor devices according to the present invention in the form shown in FIG. 7. It is a figure explaining the other form of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is DD sectional drawing of (a), (c) is (a). It is EE sectional drawing. FIG. 11 is a plan view showing another example of the lead frame for optical semiconductor devices according to the present invention in the form shown in FIG. 10. It is sectional drawing for demonstrating the side surface shape of the terminal part of the lead frame for optical semiconductor devices which concerns on this invention. It is sectional drawing which shows an example of the lead frame for optical semiconductor devices with a resin concerning this invention. It is sectional drawing which shows an example of the optical semiconductor device which concerns on this invention. It is a typical process figure showing an example of a manufacturing method of a lead frame for optical semiconductor devices concerning the present invention. It is a typical process drawing showing an example of a manufacturing method of an optical semiconductor device using a lead frame for optical semiconductor devices concerning the present invention.

  Hereinafter, the lead frame for an optical semiconductor device, the lead frame for an optical semiconductor device with resin, the optical semiconductor device, and the method for manufacturing the lead frame for an optical semiconductor device of the present invention will be described in detail.

[Lead frame for optical semiconductor devices]
First, the lead frame for optical semiconductor devices of the present invention will be described. FIG. 1 is a plan view showing an example of a plate-like form of an optical semiconductor device lead frame according to the present invention, and FIG. 2 is a partially enlarged view of an R region in FIG. 3A and 3B are explanatory views showing an example of the package region of the lead frame for an optical semiconductor device according to the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along line AA of FIG. .

  As shown in FIGS. 1 and 2, the lead frame for an optical semiconductor device according to the present invention is generally made of copper (Cu), a copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum or the like. A flat metal substrate as a material is collectively processed and formed in a multifaceted form. And after passing through each process of formation of light-reflective resin, mounting of an optical element, and formation of translucent resin, it is cut | disconnected (dicing) in a package unit, and becomes an individual optical semiconductor device.

  As shown in FIG. 3, the lead frame for an optical semiconductor device according to the present invention comprises, for example, one unit package (one unit of optical semiconductor device) with two terminal portions, and one terminal portion of the lead frame. In many cases, the optical semiconductor element is placed on the front side, but the optical semiconductor element may be placed across the two terminal portions. In addition to the terminal portion, there may be a die pad portion on which the optical semiconductor element is placed.

  Further, when one unit of optical semiconductor device is configured using a plurality of optical semiconductor elements, the lead frame for an optical semiconductor device also configures one unit package with a plurality of terminal portions corresponding to each optical semiconductor element. In some cases.

  In the example shown in FIG. 1, the lead frame for an optical semiconductor device according to the present invention is in a form of being multifaceted on a flat metal substrate, and has a frame body region 2 having a rectangular outer shape, and a frame body. A plurality of package regions 3 arranged in a matrix in the region 2 are provided. The plurality of package regions 3 are connected to each other via a connecting portion (not shown) provided in the dicing region 4.

  As shown in FIG. 2, the optical semiconductor device lead frame 10 in each package region 3 includes a terminal portion 11 and a terminal portion 12 adjacent to the terminal portion 11. Each package region 3 is a region corresponding to an individual optical semiconductor device.

  The terminal portion 12 in each package region 3 is connected to a terminal portion 11 in another package region 3 adjacent to the right side by a connecting portion 13a. Further, the terminal portions 11 in each package region 3 are connected to the terminal portions 11 in other package regions 3 adjacent to the upper and lower portions thereof by connecting portions 13b. Similarly, the terminal portion 12 in each package region 3 is connected to the terminal portion 12 in another package region 3 adjacent above and below by the connecting portion 13c. Here, each of the connecting portions 13 a, 13 b, and 13 c is located in the dicing region 4. In addition, the terminal part 11 and the terminal part 12 in the package area | region 3 located in the outermost periphery are connected with the frame body area | region 2 by one or more of connection part 13a, 13b, 13c. Each connection part 13a, 13b, 13c is thinned by the half etching from the back surface side.

  In addition, a gap (penetrating portion) is formed between the terminal portion 11 and the terminal portion 12 in the lead frame 10 for an optical semiconductor device in one package region 3, and the terminal after being cut (diced). The part 11 and the terminal part 12 are electrically insulated from each other.

  Next, the configuration of the lead frame for an optical semiconductor device according to the present invention in the package region 3 shown in FIG. 2 will be described in more detail with reference to FIG.

  The lead frame for an optical semiconductor device according to the present invention includes a plurality of terminal portions integrally having internal terminals on the front surface side and external terminals on the back surface side of the metal substrate, each electrically independent of each other. A resin-sealed optical semiconductor device that is disposed, electrically connected to the internal terminal of the terminal portion and the terminal of the optical semiconductor element, and entirely sealed with resin so that the back surface of the terminal portion is exposed to the outside. A lead frame for an optical semiconductor device to be used, wherein a concave portion having an opening is formed on a surface side of the terminal portion, and the inside of the concave portion is wider than the opening in a plan view.

  For example, as shown in FIG. 3A, an optical semiconductor device lead frame 10 according to the present invention has two terminal portions 11 and 12, and each of the terminal portions 11 and 12 includes the terminal. Concave portions 14a and 14b having openings are formed on the surface side of the portion. In this example, since the terminal portion 11 also functions as a die pad on which the optical semiconductor element is placed, the terminal portion 11 has a larger area than the adjacent terminal portion 12.

  As shown in FIG. 3B, the optical semiconductor device lead frame 10 according to the present invention includes a metal substrate 21 and a plating layer 22 formed on the metal substrate 21. In the present invention, in order to reduce the size and thickness of the optical semiconductor device, the terminals 11 and 12 constituting the optical semiconductor device lead frame 10 are electrically connected to the optical semiconductor on the surfaces 11A and 12A side. It functions as an internal terminal (inner lead) to be connected, and the back surface 11B, 12B side functions as an external terminal (outer lead) electrically connected to the external substrate.

  Examples of the material of the metal substrate 21 include copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum, and the like. The thickness of the metal substrate 21 is preferably 0.05 mm to 0.5 mm, for example.

  The plating layer 22 is provided on the front and back surfaces of the metal substrate 21 constituting the terminal portions 11 and 12, and the front-side plating layer 22 functions as a reflection layer for reflecting light from the optical semiconductor element. . On the other hand, the plating layer 22 on the back side plays a role of increasing wettability with the solder when mounted on the external substrate. In the example shown in FIG. 3B, the plating layer 22 is provided on the entire front and back surfaces of the metal substrate 21 together with the terminal portion 11 and the terminal portion 12, but in the present invention, the plating layer 22 is provided. May be formed only on a desired portion of the front surface or the back surface of the terminal portions 11 and 12. For example, in order to improve the adhesion between the inner wall of the recess and the resin, the plating layer may not be formed inside the recess.

  The plating layer 22 is made of, for example, a silver (Ag) electrolytic plating layer, and has a thickness in the range of 0.02 μm to 12 μm, for example.

<Configuration of concave portion of lead frame for optical semiconductor device>
Next, the configuration of the concave portion of the lead frame for optical semiconductor devices according to the present invention will be described.

  FIG. 4 is an enlarged cross-sectional view for explaining a concave portion of the lead frame for an optical semiconductor device according to the present invention. The lead frame for an optical semiconductor device according to the present invention has a recess having an opening on the surface side of a terminal portion constituting the lead frame for an optical semiconductor device. It is characterized by being formed wider than the width.

  For example, as shown in FIG. 4A, the recess 14 has a C-shaped cross section that opens upward. Further, the recess 14 has a substantially circular cross section inside, and has an opening on the upper side, and the edge 23 of the opening has an overhang shape protruding to the inside from the inside. The maximum width W2 inside the recess 14 is larger than the opening width W1 of the recess 14.

  The above-described form can be formed, for example, by controlling the spray pressure of the etching solution when the metal substrate 21 is etched. For example, the value of W1 is in the range of about 0.05 mm to 1 mm. W2 can be about 0.02 mm to 0.2 mm larger than W1. The depth H1 of the groove-like recess 14 depends on the size of W1 and W2, but is, for example, 1/4 to 3/4 of the thickness of the metal substrate 21 constituting the lead frame 10 for an optical semiconductor device. Preferably, it is 1/2 to 3/4 of the thickness of the metal substrate 21, and typically about 1/2 of the thickness of the metal substrate 21. The depth H1 of the recess 14 is preferably larger than the width of the opening W1.

  Since the concave portion of the lead frame for optical semiconductor devices according to the present invention has the above-described configuration, the peeling force in the vertical direction (Z direction) is formed on the resin integrally formed on the inside of the concave portion and on the opening. However, the width of the opening of the recess is narrower than the maximum width inside the recess, so that the edge of the opening acts as an anchor, and it is difficult for the resin to be detached from the lead frame for optical semiconductor devices. become. Therefore, in the present invention, the detachment of the resin from the optical semiconductor device lead frame can be more effectively prevented.

  Further, with the above-described configuration, as will be described later, when the light reflecting resin 31 and each of the connecting portions 13a, 13b, and 13c are cut (FIG. 16D), the connecting portions 13a, 13b, and 13c are pulled. When force is applied, the metal substrate 21 between the connecting portions 13a, 13b, 13c and 14a, 14b is easy to move (see FIG. 4B). Thereby, the metal substrate 21 absorbs the external force applied at the time of dicing, and it can prevent that the light reflecting resin 31 peels locally. In particular, as described above, the effect is obtained when the depth of the grooves 14a and 14b is 1/2 to 3/4 of the thickness of the metal substrate 21 and the depth H1 of the recess 14 is larger than the width of the opening W1. In particular, the stress during dicing can be relaxed.

Further, in the lead frame for optical semiconductor devices in which the concave portions as described above are formed, moisture or hydrogen sulfide from the outside to the optical element is compared with the lead frame for optical semiconductor devices having a flat surface in which no concave portions are formed. Since the intrusion path of the corrosive gas such as (H ₂ S) becomes long, the infiltration of the moisture can be suppressed. Note that the moisture intrusion path is generated at the interface between the lead frame for an optical semiconductor device and the resin. Further, when the concave portion has the overhang shape as described above, in order for moisture to enter the optical semiconductor element, it is necessary to get over the opening edge protruding inside the inner surface. In comparison with a lead frame for an optical semiconductor device in which such a recess is not formed, the intrusion of moisture can be further suppressed.

  Further, in the present invention, the plating layer is formed on the inner surface of the recess and the opening edge of the recess, and the plating layer formed on the opening edge of the recess is formed on the inner surface of the recess. It is good also as a structure formed thicker than the plating layer.

  For example, as shown in FIG. 4A, the plating layer 22 formed on the surface of the metal substrate 21 is also formed on the inner surface of the recess 14 and the opening edge, and is formed on the opening edge. The thickness T1 of the plated layer is larger than the thickness T2 of the plated layer formed on the inner surface. Note that T1 and T2 are the thickness of the plating layer in the direction horizontal to the surface of the metal substrate 21.

  The above-described form can be formed, for example, by controlling the plating formation conditions in the electrolytic plating process. More specifically, in general, the electric charge concentrates at the tip portion and the protruding portion than at the flat portion, so that the plating layer formed by the electrolytic plating method is thicker than the portion at which the tip portion and the protruding portion are flat. Tend to be. In the present invention, as described above, the opening edge 23 of the recess 14 has an overhang shape that protrudes inward from the inside, and can concentrate charges more than a flat portion. By utilizing this characteristic, the plating layer formed on the opening edge 23 can be formed thicker than the plating layer formed on the inner surface of the recess 14. For example, when the value of T2 is about 3 μm, the value of T1 can be about 8 μm.

  By adopting such a configuration, the concave portion can further increase the anchor effect and prevent the resin from being detached from the optical semiconductor device lead frame more effectively.

<Planar form of lead frame for optical semiconductor device>
Next, the planar shape and arrangement of the recesses formed in the lead frame for optical semiconductor devices according to the present invention will be described.

  The recess formed in the lead frame for optical semiconductor devices according to the present invention only needs to have the above-described configuration, and its planar shape is any of a polygon, a circle, and a ring. It may be. Moreover, the arrangement | positioning should just have an opening in the surface side of the said terminal part at least, and can be set as various arrangement | positioning.

<First Embodiment>
For example, the concave portion may be formed in a groove shape along at least a part of the outer periphery of the lead frame for an optical semiconductor device, as shown in FIG. For example, the groove-shaped recesses 14a and 14b may be disposed on the inner side of the optical semiconductor device lead frame 10 at a distance of 0.03 mm to 0.8 mm from the outer periphery.

<Second Embodiment>
The groove-shaped recess may be formed in an arc shape at a corner of the lead frame for an optical semiconductor device.

  FIGS. 5A and 5B are views for explaining the planar shape of the concave portion in the corner portion of the lead frame for an optical semiconductor device according to the present embodiment. FIG. 5A is a plan view of the package region, and FIG. As shown in FIGS. 5A and 5B, the groove-like recesses 14a and 14b are formed in an arc shape in the corner portions 15a, 15b, 15c, and 15d of the lead frame 10 for an optical semiconductor device. The radius of curvature (r) of the center line in the width direction is 1 when L is the distance between the groove-like recesses in the direction parallel to the side surfaces 16a and 16b where the terminal portion 11 and the terminal portion 12 face each other. It is preferable that the size is / 5 times to 1/2 times. For example, when L is 2 mm, the radius of curvature (r) is preferably in the range of 0.4 mm to 1 mm.

  By adopting such a configuration, in the lead frame for an optical semiconductor device according to the present invention, when forming a light-reflective resin or a light-transmitting resin, which will be described later, the grooves do not hinder the flow of each resin. The resin can be easily filled into the concave portion. Further, when heat is applied to the optical semiconductor device 40 during manufacturing or use, the optical semiconductor device lead frame 10 and the light reflective resin 31 or between the optical semiconductor device lead frame 10 and an external substrate are used. A difference in thermal expansion occurs between them. On the other hand, in the present embodiment, the recesses 14a and 14b are formed in a circular arc shape in plan view at the corner portions of the terminal portions 11 and 12, and thus can particularly absorb the thermal expansion difference that occurs in the horizontal direction. . Accordingly, it is possible to prevent peeling between the optical semiconductor device lead frame 10 and the light reflective resin 31 or between the optical semiconductor device lead frame 10 and the external substrate.

<Third Embodiment>
In the lead frame for an optical semiconductor device according to the present invention, the groove-shaped recess may be continuously formed up to a side surface where the terminal portions face each other.

  For example, as shown in FIG. 6A, a groove-like recess 14a formed along the outer periphery of the optical semiconductor device lead frame 10 according to the present invention has a side surface where the terminal portion 11 and the terminal portion 12 face each other. It may be formed continuously up to 16a. Similarly, the groove-shaped recess 14b formed along the outer periphery of the optical semiconductor device lead frame 10 according to the present invention is continuously formed up to the side surface 16b where the terminal portion 11 and the terminal portion 12 face each other. It may be.

  With such a configuration, it is possible to inject or flow out resin from the side surface of the terminal portion to the groove-shaped recess, and it is possible to more easily fill the groove-shaped recess with resin.

  In FIG. 6A, the groove-like recess 14a and the groove-like recess 14b are continuously formed up to the side surface 16a and the side surface 16b where the terminal portion 11 and the terminal portion 12 face each other. Although an example is shown, in the present invention, either one of the groove-like recess 14a or the groove-like recess 14b is continuously formed to the side surface where the terminal portion 11 and the terminal portion 12 face each other. Also good.

  In FIG. 6A, both ends of the groove-like recess 14a and the groove-like recess 14b reach the side surface 16a and the side surface 16b where the terminal portion 11 and the terminal portion 12 face each other. Although shown, in the present invention, only one of both end portions of the groove-like recess may reach the side surface where the terminal portions face each other.

<Fourth Embodiment>
Moreover, in the lead frame for optical semiconductor devices according to the present invention, a plurality of the groove-shaped recesses may be formed so as to run in parallel in a plan view. For example, as shown in FIG. 6B, a groove-like recess 14c is formed on the inner peripheral side of the groove-like recess 14a formed along the outer periphery of the optical semiconductor device lead frame 10 according to the present invention. In view, it may be formed so as to run parallel to the groove-like recess 14a. Similarly, a groove-like recess 14d is formed on the inner peripheral side of the groove-like recess 14b formed along the outer periphery of the optical semiconductor device lead frame 10 according to the present invention. It may be formed to run parallel to 14b.

  With such a configuration, in addition to the effects of the above-described embodiment, the contact area between the lead frame for an optical semiconductor device and the resin can be further increased, so that the adhesion between the resin and the lead frame for an optical semiconductor device is improved. Can be increased. Also, for example, by forming a light-reflective resin on the groove-shaped recess on the outer peripheral side and forming a light-transmitting resin on the groove-shaped recess on the inner peripheral side, Adhesion with both the light reflecting resin and the light transmitting resin can be enhanced.

  6B shows an example in which two groove-shaped concave portions on the outer peripheral side and the inner peripheral side are formed so as to run side by side in a plan view. The number of recesses is not limited to two and may be three or more.

  In addition, FIG. 6B shows an example in which both the terminal portion 11 and the groove-shaped concave portion formed in each of the terminal portions 12 are formed so as to run in parallel. In the invention, only one of the groove-like concave portions formed in the terminal portion 11 or the terminal portion 12 may be formed so as to run in parallel.

<Fifth Embodiment>
In the lead frame for an optical semiconductor device according to the present invention, the concave portion may be formed in the terminal portion other than the vicinity of the connecting portion.

  7A and 7B are diagrams for explaining another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which FIG. 7A is a plan view, FIG. 7B is a cross-sectional view along line BB in FIG. It is CC sectional drawing of (a). For example, as shown in FIG. 7A, the optical semiconductor device lead frame 10 according to the present embodiment has the groove-like recesses 14 on the surfaces of the terminal portions 11 and 12, respectively. Is formed on the surface of the terminal portions 11 and 12 other than the vicinity of the connecting portions 13a, 13b, and 13c, and is not formed in the vicinity of the connecting portions 13a, 13b, and 13c. It has become.

  For example, as shown in FIG. 7B, the thickness (thickness) of the terminal portion in the region where the recess 14 is formed is reduced by an amount corresponding to the depth of the recess 14. However, as shown in FIG. 7C, since the recess 14 is not formed in the cross section connecting the connecting portion 13a of the terminal portion 11 and the connecting portion 13a of the terminal portion 12, the thickness of the terminal portion (meat The thickness does not decrease by the amount corresponding to the depth of the recess 14. That is, the thickness of the terminal portions 11 and 12 in the vicinity of the connecting portion 13a is thicker than the thickness of the terminal portions 11 and 12 in the region in which the concave portion 14 is formed, and cut when dicing the connecting portion. Plastic deformation of the lead frame for optical semiconductor devices due to stress can be prevented.

  Next, a region near the connecting portion in the above-described lead frame for an optical semiconductor device will be described.

  FIG. 8 is a view for explaining the vicinity of the connecting portion in the optical semiconductor device lead frame according to the present invention shown in FIG. The vicinity region of the connecting portion in the present invention is, for example, the region of the terminal portion corresponding to the base region of the connecting portion, and the size in the same direction as the width direction of the connecting portion is the size of the connecting portion. The width of the connecting portion is ¼ to 3/2 times the width of the connecting portion on both sides across the width center line, and the size in the same direction as the longitudinal direction of the connecting portion is the connecting portion. This is a region having a size that is 1/2 to 3 times the width of the portion.

  For example, as shown in FIG. 8, the vicinity region of the connecting portion is a substantially rectangular region represented by d2 × d3. Here, when the width of the connecting portion 13 is d1, d2 is in a parallel relationship with D1, has a size that is 1/2 to 3 times d1, and d3 has a vertical relationship with d1. , D1 to 3 times as large as d1. In addition, the center position of d1 and the center position of d2 correspond.

  As described above, in the lead frame for an optical semiconductor device according to the present embodiment, the vicinity region is defined based on the width of the connecting portion (the length of the base connected to the terminal portion), and the vicinity region of the connecting portion. In order to form the concave portion on the surface of the terminal portion other than the vicinity of the connecting portion without forming the concave portion for improving the adhesion with the resin, the thickness of the terminal portion in the vicinity of the connecting portion It is possible to keep the thickness thicker than the thickness of the region where is formed. Therefore, in the lead frame for an optical semiconductor device according to the present embodiment, the lead for the optical semiconductor device due to cut stress when dicing the connecting portion while improving the adhesion between the lead frame for the optical semiconductor device and the resin. The plastic deformation of the frame can be prevented.

  Next, as in the fifth embodiment, another example of the lead frame for an optical semiconductor device according to the present invention in which the concave portion is formed in the terminal portion other than the vicinity of the connecting portion will be described with reference to FIG. Will be described.

<Sixth Embodiment>
Also in the above-described lead frame for an optical semiconductor device of the fifth embodiment, a plurality of the concave portions may be formed so as to run in parallel in a plan view. For example, as shown in FIG. 9A, in the lead frame 10 for an optical semiconductor device according to the present invention, a groove is formed on the inner peripheral side of the groove-shaped recess 14c formed along at least a part of the outer periphery. 14 d of shape may be formed so that it may run in parallel with the groove-shaped recessed part 14 c in planar view.

<Seventh Embodiment>
Further, the concave portion may be formed in an arc shape at a corner portion of the lead frame for an optical semiconductor device. For example, as shown in FIG. 9B, the groove-shaped recess 14 may be formed in an arc shape in the corner portion 15 of the lead frame 10 for optical semiconductor devices.

<Eighth Embodiment>
In the lead frame for an optical semiconductor device according to the present invention, the recess has a substantially circular or substantially polygonal shape in plan view, and a plurality of the recesses are formed on the surface side of the terminal portion. May be formed. For example, as shown in FIG. 9C, a plurality of recesses 14 e having a substantially circular planar shape may be formed along at least a part of the outer periphery of the optical semiconductor device lead frame 10. However, the recess 14e is not formed in the vicinity region of the connecting portion, but is formed on the surface of the terminal portion other than the vicinity region of the connecting portion.

  With such a configuration, in the lead frame for an optical semiconductor device according to the present invention, the thickness (thickness) of the terminal portion is formed by forming the recess while maintaining the adhesion between the lead frame for the optical semiconductor device and the resin. As a result, it is possible to reduce the area in which the lead is reduced, so that the strength of the lead frame for an optical semiconductor device can be maintained high.

  FIG. 9C shows an example in which the substantially circular recesses 14e are formed in approximately one line along the vicinity of the outer periphery of the optical semiconductor device lead frame 10 in plan view. The installation position may be other than the vicinity of the connecting portion, and may be randomly formed at an inner position. Further, the planar shape of the recess 14e is not limited to a substantially circular shape, and may be various substantially polygonal shapes such as a rectangle and an L shape.

<Ninth Embodiment>
In the lead frame for an optical semiconductor device according to the present invention, the recess is formed in a region near the corner portion of the lead frame for the optical semiconductor device, and a flat region is formed in a region other than the region near the corner portion. May be.

  For example, as shown in FIG. 10A, an optical semiconductor device lead frame 10 according to the present invention is composed of two terminal portions 11 and 12, and is formed on the surface side of the optical semiconductor device lead frame 10. Concave portions 14 are formed in the corner regions 15a, 15b, 15c, and 15d to improve the adhesion to the resin. The recesses 14 are not formed on the surface of the optical semiconductor device lead frame 10 other than the vicinity regions 15a, 15b, 15c, and 15d near the corner portions, which are flat regions.

  Here, the vicinity region of the corner portion can be, for example, a region from each corner (corner) of the lead frame to each connecting portion located at the shortest position. For example, in FIG. 10A, in the drawing, in the vicinity area 15a of the corner portion shown at the upper left of the terminal portion 11, the horizontal direction (X direction) extends from the corner (corner) of the lead frame to the left end of the connecting portion 13b. The vertical direction (Y direction) can be a region from the corner (corner) of the lead frame to the upper end of the connecting portion 13a.

  If it is such an area | region, since a recessed part is not formed in the area | region of the base of a connection part, the thickness of the area | region of the base of a connection part can be maintained. Therefore, the strength of the base region of the connecting portion can be maintained, and plastic deformation of the lead frame for an optical semiconductor device due to cut stress when dicing the connecting portion can be prevented.

  For example, as shown in FIG. 10B, the thickness (thickness) of the terminal portions 11 and 12 in the region where the recess 14 is formed is reduced by an amount corresponding to the depth of the recess 14. However, as shown in FIG. 10 (c), since the concave portion 14 is not formed in the cross section of the flat region of the terminal portions 11 and 12, the thickness (thickness) of the terminal portion is the depth of the concave portion 14. There is no such thing as reducing the thickness by a size corresponding to this. That is, the thickness of the terminal portions 11 and 12 in the flat region is thicker than the thickness of the terminal portions 11 and 12 in the region where the recess 14 is formed. Therefore, the lead frame for an optical semiconductor device of this embodiment can prevent the lead frame from being plastically deformed by suppressing the decrease in strength due to the formation of the recess compared to the other embodiments.

  Further, since the position where the peeling force is most concentrated in close contact with the resin is the corner portion of the lead frame, the lead frame for an optical semiconductor device according to the present invention having a recess in the region near the corner portion is provided with the recess forming region. In addition, it is possible to efficiently maintain the adhesive force with the resin while suppressing a decrease in the adhesiveness due to the decrease in the amount of the resin.

  Next, as in the ninth embodiment described above, the recess is formed in a region near the corner portion of the lead frame for an optical semiconductor device, and a flat region is formed in a region other than the region near the corner portion. Another example of the lead frame for an optical semiconductor device according to the present invention will be described with reference to FIG.

<Tenth Embodiment>
In the lead frame for an optical semiconductor device of the ninth embodiment described above, the recess may be continuously formed up to the outer peripheral side surface of the lead frame for an optical semiconductor device. For example, as illustrated in FIG. 11A, the substantially L-shaped concave portion 14 f may be continuously formed up to the outer peripheral side surfaces 17 a and 17 b of the optical element lead frame 10 in plan view. With such a configuration, it becomes possible to inject the resin from the side surfaces 17a and 17b into the recess 14f, and the resin can be more easily filled into the recess 14f.

<Eleventh embodiment>
Moreover, the corner | angular part of the said recessed part may be formed in circular arc shape in planar view. For example, as shown in FIG. 11B, the corners of the recess 1gb may be formed in an arc shape in plan view. In addition, the recessed part 14g shown in FIG.11 (b) makes the corner | angular part of the substantially L-shaped recessed part 14g shown to Fig.11 (a) circular arc shape. With such a configuration, the corner portion is formed with a smooth curved surface, and therefore, when forming a light-reflecting resin or a light-transmitting resin, which will be described later, the flow to each of the recesses 14g is not hindered. The resin can be easily filled.

<Twelfth Embodiment>
In the lead frame for an optical semiconductor device according to the present embodiment, the shape of the concave portion is not limited to the substantially L shape as described above, and various substantially polygonal, substantially circular, substantially fan-shaped, or substantially ring-shaped shapes. It may have either shape. For example, as shown in FIG. 11C, the recess 14h has a substantially fan-shaped outer shape in plan view, and has a substantially circular flat region 18 inside the substantially sector-shaped region. Such a shape may be used. The thickness of the flat region 18 is the same as the thickness of the flat region of the optical semiconductor device lead frame 10 (that is, the thickness of the metal substrate 21 described above). With such a configuration, the corner portion is formed with a smooth curved surface, and therefore, when forming a light-reflecting resin or a light-transmitting resin, which will be described later, the flow into each recess 14h is not hindered. The resin can be easily filled.

  Although not shown, in the lead frame for an optical semiconductor device according to the present invention, the number of the concave portions is not particularly limited, and a plurality of the concave portions may be formed in the vicinity of each corner portion. For example, the concave portion formed on the outer peripheral side and the concave portion formed on the inner peripheral side may contribute to adhesion with different resins.

<Configuration of side surface of lead frame for optical semiconductor device>
Next, the configuration of the side surface of the lead frame for an optical semiconductor device according to the present invention will be described.

  FIG. 12 is an enlarged cross-sectional view for explaining a side surface of the lead frame for an optical semiconductor device according to the present invention. In addition, FIG. 12 is for demonstrating the shape of the side surface of the lead frame for optical semiconductor devices based on this invention, and about the plating layer formed in the surface of the metal substrate 21 in order to avoid becoming complicated. Omitted.

  In the lead frame for an optical semiconductor device according to the present invention, a cross section of a side surface of the terminal portion may be formed in an uneven shape. For example, as shown in FIG. 12A, a protrusion 24 protruding in a direction perpendicular to the side surface is formed at the lower end portion of the side surface of the metal substrate 21 constituting the terminal portion. The cross section of the side surface may be formed in an uneven shape.

  The above-described form can be formed, for example, by etching the metal substrate 21 from the surface side of the terminal portion using an isotropic etching solution when forming the outer shape of the terminal portion. . 12A shows an example in which a protrusion 24 protruding in a direction perpendicular to the side surface is formed at the lower end of the side surface of the metal substrate 21, but in the present invention, the metal substrate 21 is shown. A protrusion protruding in a direction perpendicular to the side surface may be formed at the upper end of the side surface.

  Further, in the present invention, as shown in FIG. 12 (b), protrusions 24a and 24b projecting in a direction perpendicular to the side surface are provided on the upper end portion and the lower end portion of the side surface of the metal substrate 21 constituting the terminal portion. By forming each, the cross section of the side surface of the terminal portion may be formed in an uneven shape. Such a form may be formed by, for example, spray etching from the surface side of the terminal part or from both front and back sides when forming the outer shape of the terminal part, and controlling the spray pressure of the spray etching. it can.

  Further, in the present invention, as shown in FIG. 12C, protrusions 24a projecting in the direction perpendicular to the side surface at the upper end portion, the central portion, and the lower end portion of the side surface of the metal substrate 21 constituting the terminal portion. , 24b and 24c are respectively formed, and the cross section of the side surface of the terminal portion may be formed in an uneven shape. Such a form can be formed by, for example, spray-etching from the front and back sides of the terminal portion and controlling the spray pressure of the spray etching when forming the outer shape of the terminal portion.

  By having the configuration as described above, the lead frame for an optical semiconductor device according to the present invention can more effectively prevent the resin formed on the outer peripheral side surface of the terminal portion from being detached. In addition, the lead frame for an optical semiconductor device according to the present invention has a complicated uneven shape not only on the concave portion formed on the surface side of the terminal portion but also on the side surface of the terminal portion. Increases the adhesion more. Further, since the water intrusion path from the outside to the optical element becomes longer, it is possible to further suppress the water intrusion from the outside.

[Lead frames for optical semiconductor devices with resin]
Next, the lead frame for an optical semiconductor device with resin according to the present invention will be described. FIG. 13 is a cross-sectional view showing an example of a lead frame for an optical semiconductor device with a resin according to the present invention. A lead frame for an optical semiconductor device with a resin according to the present invention includes the above-described lead frame for an optical semiconductor device according to the present invention and a light-reflecting resin that reflects light emitted from the optical semiconductor element.

  The above-described light-reflective resin is made of, for example, a thermoplastic resin or a thermosetting resin, and is formed on the surface and side surfaces of the lead frame for an optical semiconductor device around the portion where the optical semiconductor element is placed. . As a method for forming the above-described light-reflective resin, for example, a method of inserting a lead frame into a resin mold and injecting the resin, such as injection molding or transfer molding, or screen printing a resin on the lead frame Can be used. Here, as described above, the terminal portion 11 and the terminal portion 12 according to the present invention function as internal terminals (inner leads) electrically connected to the optical semiconductor element on the front surface side, and on the back surface side as the external terminal. It functions as an external terminal (outer lead) electrically connected to the substrate. Therefore, in the lead frame 30 for an optical semiconductor device with a resin according to the present invention, as shown in FIG. 13, the light reflecting resin 31 is not formed on the back surfaces of the terminal portion 11 and the terminal portion 12. The back surfaces of the terminal portions 11 and 12 are exposed.

  In addition, it is preferable that the light-reflective resin 31 is formed in the gap (through portion) formed between the terminal portion 11 and the terminal portion 12. The terminal portion 11 and the terminal portion 12 can be electrically insulated, and the light reaching the gap (penetrating portion) can be reflected with a high reflectance, thereby improving the light emission efficiency of the optical semiconductor device. Because it can.

  About the thermoplastic resin and thermosetting resin used for the above-mentioned light-reflective resin, it is particularly desirable to select a resin having excellent heat resistance, light resistance and mechanical strength. For example, as the thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, or the like can be used. As the thermosetting resin, silicone, epoxy, polyetherimide, polyurethane, polybutylene acrylate, or the like can be used. Furthermore, it is also possible to increase the light reflectance by adding any of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflecting agent in these resins. .

  Moreover, in this invention, it is preferable that the said light reflection resin is formed on at least one part of the said groove-shaped recessed part. For example, as shown in FIG. 13A, the light reflective resin 31 may be formed on the concave portion 14 provided in the terminal portion 11 and the terminal portion 12. This is because by adopting such a configuration, it is possible to improve the adhesion between the light reflective resin 31 and the terminal portions 11 and 12 constituting the lead frame for an optical semiconductor device.

  In the present invention, for example, as shown in FIG. 13B, the light reflective resin 31 may be formed on the outer peripheral side of the recess 14. If it is such a structure, the translucent resin which seals an optical semiconductor element will be formed in the area | region enclosed by the light-reflective resin using the above lead frames for optical semiconductor devices with a resin. This is because the adhesion between the translucent resin and the optical semiconductor device lead frame can be improved.

  Although not shown, in the present invention, for example, the optical semiconductor device lead frame having a plurality of groove-shaped recesses as shown in FIG. A light-reflective resin may be formed on the groove-shaped recess, and a light-transmitting resin may be formed on the groove-shaped recess on the inner peripheral side. By adopting such a configuration, it is possible to improve the adhesion between both the light reflecting resin and the light transmitting resin and the lead frame for the optical semiconductor device. This is because, when forming each resin, it is possible to easily fill each groove-shaped recess with each resin without hindering the flow of each resin.

[Optical semiconductor device]
Next, an optical semiconductor device according to the present invention will be described. FIG. 14 is a cross-sectional view showing an example of an optical semiconductor device according to the present invention. An optical semiconductor device according to the present invention includes an optical semiconductor device lead frame according to the present invention, an optical semiconductor element mounted on a surface of the optical semiconductor device lead frame, and the optical semiconductor element sealed. And a translucent resin that transmits at least part of the light emitted from the optical semiconductor element. In the optical semiconductor device according to the present invention, the above-described light-reflecting resin may be provided so as to surround the light-transmitting resin in plan view. For example, in the example shown in FIG. 14A, the optical semiconductor device 40 according to the present invention includes an optical semiconductor element 42 placed on the surface of the terminal portion 11 of the lead frame for an optical semiconductor device according to the present invention and a light transmission. A light-reflective resin 31 is provided so as to surround the translucent resin 44.

  As the above-described optical semiconductor element, for example, a conventionally used LED element can be used. Here, in the LED element, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, and AlInGaP or various GaN-based compound semiconductor single crystals such as InGaN as the light emitting layer, An emission wavelength ranging from ultraviolet light to infrared light can be selected.

  As a mounting form of the optical semiconductor element, for example, as shown in FIGS. 14A and 14B, one of the two terminal portions 11 and 12 is used as a die pad, for example, FIG. As shown in (c), there is a form that straddles the two terminal portions 11 and 12. Although not shown, there is also a form in which the optical semiconductor element is placed on a die pad part different from the terminal part.

  For example, as shown in FIGS. 14A and 14B, the optical element 42 is fixedly mounted on the terminal portion 11 with a heat-dissipating adhesive 41 such as solder, and the terminal portion 11 and the terminal portion are connected with bonding wires 43. 12 is connected.

  Here, when a die bonding paste is used instead of the solder 41, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

  The bonding wire 43 is made of a material having good conductivity such as gold (Au), for example. One end of the bonding wire 43 is connected to the optical semiconductor element 42 and the other end is connected to the terminal portions 11 and 12. Note that, for example, as shown in FIG. 14C, the connection between the optical semiconductor element and the terminal portion is performed by using a heat-dissipating adhesive 41a having conductivity such as gold-gold bonding or soldering instead of the bonding wire. , 41b, there is also a method of connecting to each terminal portion 11, 12. Further, the terminal of the optical semiconductor element is used for an optical semiconductor device by using ACF (anisotropic conductive film), ACP (anisotropic conductive paste), NCF (nonconductive film), NCP (nonconductive paste), or the like. There is also a method of directly joining the terminal portion of the lead frame.

  Next, the translucent resin will be described. As the translucent resin according to the present invention, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the optical semiconductor element in order to improve the light extraction efficiency. For example, an epoxy resin or a silicone resin can be selected as a resin that satisfies the characteristics of high heat resistance, light resistance, and high mechanical strength. In particular, when a high-brightness LED is used as the optical semiconductor element, the translucent resin is exposed to strong light. Therefore, the translucent resin is preferably made of a silicone resin having high light resistance.

  Since the light-reflective resin has already been described in the above-described lead frame for an optical semiconductor device with a resin according to the present invention, detailed description thereof is omitted here.

  In the optical semiconductor device of the present invention, it is preferable that the translucent resin is formed on at least a part of the recess. For example, as shown to Fig.14 (a), the translucent resin 44 may be formed on the recessed part 14 provided in the terminal part 11 and the terminal part 12. As shown in FIG. By adopting such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the translucent resin and the optical semiconductor device lead frame can be enhanced.

  In the optical semiconductor device of the present invention, it is preferable that the light reflecting resin is formed on at least a part of the recess. For example, as shown in FIG. 14B, the light reflective resin 31 may be formed on the concave portions 14 provided in the terminal portion 11 and the terminal portion 12. By adopting such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the light-reflective resin and the optical semiconductor device lead frame can be enhanced.

  Although not shown, in the present invention, for example, using the optical semiconductor device lead frame having a plurality of groove-shaped recesses as shown in FIG. A light-reflective resin may be formed on the concave portion and a light-transmitting resin may be formed on the groove-shaped concave portion on the inner peripheral side. By adopting such a configuration, it is possible to improve the adhesion between both the light reflecting resin and the light transmitting resin and the lead frame for the optical semiconductor device. This is because, when forming each resin, it is possible to easily fill each groove-shaped recess with each resin without hindering the flow of each resin.

[Method for manufacturing lead frame for optical semiconductor device]
Next, a method for manufacturing a lead frame for optical semiconductor devices according to the present invention will be described. FIG. 15 is a schematic process chart showing an example of a method for manufacturing a lead frame for an optical semiconductor device according to the present invention.

  First, as shown in FIG. 15A, a flat metal substrate 21 is prepared. As the metal substrate 21, a metal substrate made of copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 21 performed the degreasing | defatting etc. on both surfaces, and performed the washing process.

  Next, resist patterns 51a and 51b are formed on the front surface and the back surface of the metal substrate 21, respectively (FIG. 15B). Conventionally known resists for etching can be used as the resist patterns 51a and 51b and the forming method thereof.

  Next, the metal substrate 21 is etched using the resist patterns 51a and 51b as etching resistant films (FIG. 15C), and then the resist patterns 51a and 51b are removed (FIG. 15D). Although omitted in FIG. 15, the terminal portion 11 and the terminal portion 12 after this etching process are not yet separated into package units. For example, as shown in FIG. It is connected to a terminal portion of another package region via 13b and 13c.

  Here, in the method of manufacturing the lead frame for an optical semiconductor device according to the present invention, in the step of performing the etching, the outer shape of the terminal portion is formed by through-etching from the front surface side and the back surface side of the metal substrate. A concave portion having an inner area larger than the area of the opening in a plan view is formed on the surface side of the terminal portion by half etching from the surface side.

  For example, as shown in FIG. 15C, the terminal portion 11 is formed by through etching from both the front surface side of the metal substrate 21 exposed from the resist pattern 51a and the back surface side of the metal substrate 21 exposed from the resist pattern 51b. The outer shape of the terminal portion 12 and the penetrating portion 61 that insulates the terminal portion 11 from the terminal portion 12 are formed. On the other hand, the terminal portion 11 and the terminal are subjected to half etching from the surface side of the metal substrate 21 exposed from the resist pattern 51a. On each surface side of the portion 12, a recess 14 having an inner area larger than the opening area in a plan view is formed in the same process.

The etching solution used for the above-described etching can be appropriately selected according to the material of the metal substrate 21 to be used. For example, when copper is used for the metal substrate 21, a ferric chloride aqueous solution can be used. Then, for example, by performing spray etching on the surface side of the metal substrate 21 at a pressure of 1 kg / cm ² or more, the concave portion 14 having an inner area larger than the opening area in plan view as described above is formed. be able to.

  Here, in the etching of the recess, although it is affected by the opening area of the recess and the resist thickness, in general, the etching of copper by the ferric chloride aqueous solution is diffusion-controlled, so that the fresh chloride chloride before the reaction is performed. The portion supplied with the aqueous solution of ferrous iron shows a tendency to be etched more. On the other hand, the ferric chloride aqueous solution consumed for the etching reaction deteriorates the etching ability. Therefore, when spray etching is performed at a high pressure using an aqueous ferric chloride solution, unreacted fresh ferric chloride aqueous solution is supplied from the opening of the concave portion toward the bottom of the concave portion. The bottom and the inner wall near the bottom are easily etched. On the other hand, since the ferric chloride aqueous solution having deteriorated reactive etching ability tends to remain at the opening edge of the recess and in the vicinity thereof, the opening edge of the recess and the inner wall in the vicinity thereof are difficult to be etched.

  The spray etching on the back side of the metal substrate 21 does not necessarily have to be performed under the same conditions as the spray etching on the front side. In the present invention, the shape of the side surface of the lead frame for an optical semiconductor device according to the present invention is controlled as shown in FIG. Various uneven shapes can be formed.

  Next, as shown in FIG. 15E, electrolytic plating using, for example, a silver plating solution mainly composed of silver cyanide is performed on the entire surface of the metal substrate 21 constituting the terminal portion 11 and the terminal portion 12. Thereby, the plating layer 22 is formed, and the lead frame 1 for optical semiconductor devices according to the present invention is obtained. In addition, before forming the plating layer 22, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating layer 22 may be formed through an electrolytic plating process.

  Here, in the method for manufacturing the lead frame for an optical semiconductor device according to the present invention, in the step of forming the electrolytic plating layer, the anode electrode is disposed substantially parallel to the surface of the terminal portion, thereby The electrolytic plating layer formed on the opening edge is formed thicker than the electrolytic plating layer formed on the inner surface of the recess.

  The plating layer formed by the electrolytic plating method can be formed thicker than the flat portion at the tip portion or the protruding portion. Such a phenomenon can be achieved by concentrating the electric charge on the tip portion or the protruding portion as described above rather than on a flat portion. In the present invention, as described above, the opening edge 23 of the recess 14 has an overhang shape that protrudes inward from the inside, and can concentrate charges more than a flat portion. Utilizing the above phenomenon, the plating layer formed on the opening edge 23 can be formed thicker than the plating layer formed on the inner surface of the recess 14.

[Method for manufacturing lead frame for optical semiconductor device with resin and method for manufacturing optical semiconductor device]
Next, a method for manufacturing a lead frame for an optical semiconductor device with resin according to the present invention and a method for manufacturing an optical semiconductor device will be described. FIG. 16 is a schematic process diagram illustrating an example of a method for manufacturing an optical semiconductor device according to the present invention, following the method for manufacturing a lead frame for an optical semiconductor device according to the present invention illustrated in FIG. 15.

  First, as shown in FIG. 16 (a), by forming a light-reflective resin 31 on the surface and side surfaces of the lead frame for an optical semiconductor device according to the present invention obtained by the above-described steps, the present invention is achieved. Such a resin-coated optical semiconductor device lead frame 30 is obtained. The light reflective resin 31 can be formed, for example, by injection molding or transfer molding of a thermoplastic resin using a mold processed into a desired shape, whereby a lead frame for an optical semiconductor device is formed. And the light reflecting resin 31 are integrally coupled.

  Here, in the present invention, as shown in FIG. 16A, it is preferable to form a light-reflective resin 31 at least inside the recesses 14 and on the openings. This is because detachment of the light-reflective resin 31 from the lead frame for an optical semiconductor device can be more effectively prevented, and entry of moisture from the outside can be suppressed.

  Next, as shown in FIG. 16B, the optical semiconductor element 42 is placed on the terminal portion 11 via a heat-dissipating adhesive 41 such as solder, and the optical semiconductor element 42 and the terminal are connected by the bonding wire 43. The part 11 and the terminal part 12 are electrically connected.

  Next, as shown in FIG. 16C, the surface of the terminal portion 11 and the terminal portion 12 in the region surrounded by the light-reflecting resin 31 is filled with a light-transmitting resin 44, and light is transmitted by the light-transmitting resin 44. The semiconductor element 42 is sealed.

  Here, although not shown in FIG. 16, in the present invention, the translucent resin 44 may be formed at least inside the recesses 14 and on the openings. This is because the detachment of the translucent resin 44 from the lead frame for an optical semiconductor device can be more effectively prevented, and the entry of moisture from the outside can be suppressed.

  Although not shown in FIG. 16, in the present invention, for example, as shown in FIG. 6B, the outer peripheral side and the inner peripheral side along the outer periphery of the lead frame 10 for optical semiconductor devices. Are formed, a light-reflective resin 31 is formed on the groove-shaped recess on the outer peripheral side, and a light-transmitting resin 44 is formed on the groove-shaped recess on the inner peripheral side. May be. This is because the adhesion between the optical semiconductor device lead frame and both the light-reflective resin 31 and the translucent resin 44 can be improved.

  Next, the conventional method or the like is used to cut the light reflecting resin 31 and the connecting portions 13a, 13b, 13c (not shown) in the dicing region 4 (FIG. 16D), and according to the present invention. The optical semiconductor device 40 is obtained (FIG. 16E).

  The optical semiconductor device lead frame, the resin-coated optical semiconductor device lead frame, the optical semiconductor device, and the method for manufacturing the optical semiconductor device lead frame of the present invention have been described above. However, the present invention is limited to the above-described embodiment. Is not to be done. The above-described embodiment is an exemplification, and the technical idea described in the claims of the present invention has substantially the same configuration and exhibits the same function and effect regardless of the case. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Lead frame for optical semiconductor devices 2 ... Frame region 3 ... Package region 4 ... Dicing region 10 ... Lead frame for optical semiconductor devices 11, 12 ... Terminal portion 13, 13a , 13b, 13c ... connecting part 14, 14a, 14b, 14c, 14d ... concave part 15a, 15b, 15c, 15d ... corner part 16a, 16b ... side face 17a, 17b ... side face 18. .. Area 21: Metal substrate 22 ... Plating layer 23 ... Edge 24, 24a, 24b, 24c ... Projection 30 ... Lead frame for optical semiconductor device with resin 31 ... Light reflection Resin 40 ... Optical semiconductor device 41, 41a, 41b ... Heat dissipating adhesive 42 ... Optical semiconductor element 43 ... Bonding wire 44 ... Translucent resin 51a, 51b ... resist pattern 61 ... through part

Claims (16)

In a lead frame for an optical semiconductor device used for a resin-encapsulated optical semiconductor device,
A plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side,
A concave portion having an opening is formed on the surface side of each terminal portion,
In plan view, the width of the inside of the recess is wider than the width of the opening,
The lead frame for an optical semiconductor device, wherein the recess has a C-shaped cross section that opens upward.   2. The lead frame for an optical semiconductor device according to claim 1, wherein the recess has an overhang shape in which an edge of the opening of the recess protrudes inward from the inside of the recess. A plating layer is formed on the inner surface of the recess and the opening edge of the recess,
The plating layer formed on the opening edge of the recess,
3. The lead frame for an optical semiconductor device according to claim 1, wherein the lead frame is formed thicker than the plating layer formed on the inner surface of the recess.   The said recessed part is formed along at least one part of the outer periphery of the said terminal part, The said recessed part is formed in planar view circular arc shape in the corner part of a terminal part. An optical semiconductor device lead frame according to claim 1.   5. The lead frame for an optical semiconductor device according to claim 1, wherein a depth of the concave portion is larger than a width of the opening of the concave portion.   The depth of the recess is 1/2 to 3/4 of the thickness of the metal substrate constituting the lead frame for an optical semiconductor device, according to any one of claims 1 to 5. Lead frame for optical semiconductor devices.   7. The optical semiconductor device according to claim 1, wherein a connection portion that is thinned from the back surface side is provided in the vicinity of the outer side of the concave portion on the front surface side of the terminal portion. Lead frame.   8. A resin-coated optical semiconductor device comprising: the optical semiconductor device lead frame according to claim 1; and a light reflective resin that reflects light emitted from the optical semiconductor element. Lead frame.   9. The lead frame for an optical semiconductor device with a resin according to claim 8, wherein the light-reflecting resin is formed on at least a part of the recess.   An optical semiconductor device lead frame according to any one of claims 1 to 7, an optical semiconductor element mounted on a surface of the optical semiconductor device lead frame, and the optical semiconductor element are sealed, An optical semiconductor device comprising: a translucent resin that transmits part of light emitted from the optical semiconductor element.   11. The optical semiconductor device according to claim 10, wherein a light-reflecting resin that reflects light emitted from the optical semiconductor element is provided so as to surround the light-transmitting resin in a plan view.   The optical semiconductor device according to claim 10, wherein the translucent resin is formed on at least a part of the recess.   The optical semiconductor device according to any one of claims 11 to 12, wherein the light-reflecting resin is formed on at least a part of the concave portion. A method for manufacturing a lead frame for an optical semiconductor device, which is used in a resin-encapsulated optical semiconductor device and includes a plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side. ,
Preparing a metal substrate;
Forming a resist pattern on each of the front and back surfaces of the metal substrate; and
Etching the front and back of the metal substrate with the resist pattern as an etching resistant film;
Forming an electroplating layer on at least a part of the surface of the metal substrate,
In the step of performing the etching, through etching from the front side and the back side of the metal substrate,
Forming the outer shape of the terminal part,
By half etching from the surface side of the metal substrate,
On the surface side of the terminal part,
A method of manufacturing a lead frame for an optical semiconductor device, comprising: forming a recess having a C-shaped cross section having an inner width wider than an opening width in plan view and opening upward.   15. The optical semiconductor according to claim 14, wherein, in the step of performing the etching, a connection portion thinned by half etching from the back surface side is formed in the vicinity of the outside of the concave portion on the front surface side of the terminal portion. Manufacturing method of lead frame for apparatus. In the step of forming the electrolytic plating layer,
By arranging the anode electrode substantially parallel to the surface of the terminal portion,
The electrolytic plating layer formed on the opening edge of the recess,
The method of manufacturing a lead frame for an optical semiconductor device according to claim 14, wherein the lead frame is formed thicker than the electrolytic plating layer formed on the inner surface of the recess.

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