JP6103409B2 - Lead frame for optical semiconductor device, lead frame for optical semiconductor device with resin, and optical semiconductor device - Google Patents

Description

  The present invention relates to a lead frame for an optical semiconductor device on which an optical semiconductor element such as an LED is placed, a lead frame for an optical semiconductor device with resin, and an optical semiconductor device.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources are used in various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of these lighting devices include an optical semiconductor device having a lead frame having a terminal portion insulated from each other and an LED element.

  As such an optical semiconductor device, for example, Patent Document 1 discloses a PLCC (Plastic leaded chip carrier) type optical semiconductor device. In Patent Document 1, a PLCC type optical semiconductor device has a structure that holds a lead frame and a dome-shaped capsule material that seals an LED element.

  Here, in general, a light-transmitting resin that transmits light emitted from the LED element is used as a material for sealing the LED element, and the outer periphery thereof is light-reflective in order to improve the light emission efficiency of the optical semiconductor device. Resin is formed.

JP 2007-49167 A

  In recent years, there has been a demand for further downsizing and thinning of optical semiconductor devices including LED elements. Therefore, a structure (so-called bottom mounting structure) in which the terminal portion of the surface (back surface) opposite to the surface (front surface) on which the LED element of the lead frame is placed is exposed as an external terminal from the resin and mounted on the external substrate. ) Optical semiconductor devices have been used.

  In such a small and thin optical semiconductor device, for example, the resin is formed only on the front and side surfaces of the terminal portion and not on the back surface of the terminal portion, so that the contact area between the resin and the lead frame is reduced. In order to prevent the resin from detaching due to this, a fine concave portion is formed on the surface of the lead frame to improve the adhesion.

  Here, the lead frame as described above is generally processed and formed on a flat metal substrate in a multifaceted form via a connecting portion, forming a light-reflective resin, and mounting an optical semiconductor element. After the respective steps such as placement and formation of a translucent resin, the connecting portion is cut (diced), whereby individual optical semiconductor devices are obtained.

  However, when the concave portion as described above is formed in the vicinity of the connecting portion, the thickness (thickness) of the terminal portion in that region is reduced. There was a risk that the frame would be deformed.

  The present invention has been made in view of the above circumstances, and can prevent plastic deformation of the lead frame due to cut stress during dicing even when the above-described recess is formed on the surface of the lead frame. Another object is to provide a lead frame for an optical semiconductor device, a lead frame for an optical semiconductor device with resin, and an optical semiconductor device.

  As a result of various researches, the present inventor has formed the recess as described above in a region other than the vicinity of the connection portion on the surface of the lead frame, and does not form the recess in a region near the connection portion. The present invention has been completed by finding that the above problems can be solved by keeping the thickness of the lead frame in the vicinity of the portion thicker than the thickness of the region in which the concave portion is formed.

  That is, the present invention includes a plurality of terminal portions including an internal terminal located on the front surface side and an external terminal located on the back surface side in a lead frame for an optical semiconductor device used in a resin-encapsulated optical semiconductor device. In addition, each terminal portion is connected to a connecting portion that is cut to the outer shape of the optical semiconductor device, and a recess is formed in a region other than the vicinity of the connecting portion in the surface of each terminal portion. The lead frame for an optical semiconductor device is characterized in that no recess is formed in a region in the vicinity of the connecting portion on the surface of the terminal portion.

  The present invention is the lead frame for an optical semiconductor device, wherein the recess is formed in a groove shape along at least a part of the outer periphery of the lead frame for the optical semiconductor device in a plan view. .

  The present invention is the lead frame for an optical semiconductor device, wherein a plurality of the recesses are formed so as to run in parallel in a plan view.

  The present invention is the lead frame for an optical semiconductor device, wherein the recess is formed in an arc shape at a corner portion of the lead frame for the optical semiconductor device.

  In the present invention, the recess has a substantially circular or substantially polygonal shape in plan view, and a plurality of the recesses are provided along at least a part of the outer periphery of the lead frame for an optical semiconductor device. Is a lead frame for optical semiconductor devices.

  Further, in the present invention, at least a pair of the connecting portions is connected to each of the terminal portions, and the concave portion is formed between regions near the pair of connecting portions among the surfaces of the terminal portions, A lead frame for an optical semiconductor device, wherein a recess is not formed in a region in the vicinity of the pair of connecting portions on the surface of each terminal portion.

  Further, the present invention is the lead frame for an optical semiconductor device, wherein the connecting portion is thinned from the back side.

  According to another aspect of the present invention, there is provided a lead frame for an optical semiconductor device with a resin, comprising: a lead frame for an optical semiconductor device; and a light reflective resin that reflects light emitted from the optical semiconductor element.

  The present invention is the lead frame for an optical semiconductor device with a resin, wherein the light reflecting resin is formed on at least a part of the recess.

  The present invention also provides a lead frame for an optical semiconductor device, an optical semiconductor element placed on the surface of the lead frame for an optical semiconductor device, and the light emitted from at least the optical semiconductor element by sealing the optical semiconductor element. And a translucent resin that transmits part of the optical semiconductor device.

  The present invention is also an optical semiconductor device characterized in that a light-reflective resin that reflects light emitted from the optical semiconductor element is provided so as to surround the light-transmitting resin in plan view.

  The present invention is the optical semiconductor device, wherein the translucent resin is formed on at least a part of the recess.

  Moreover, the present invention is the optical semiconductor device, wherein the light reflecting resin is formed on at least a part of the recess.

  According to the present invention, the surface on the surface side of the terminal portion other than the vicinity of the connecting portion is provided on the surface on the surface side of the terminal portion constituting the lead frame for an optical semiconductor device and the recess for improving the adhesion to the resin. Since the concave portion is not formed in the vicinity of the connecting portion, the thickness of the terminal portion in the vicinity of the connecting portion is kept thicker than the thickness of the region in which the concave portion is formed. This makes it possible to improve the adhesion between the optical semiconductor device lead frame and the resin, and to prevent plastic deformation of the optical semiconductor device lead frame due to cut stress when dicing the connecting portion.

It is a top view which shows an example of the flat form of the lead frame for optical semiconductor devices which concerns on this invention. It is the elements on larger scale of the R area | region in FIG. It is explanatory drawing which shows an example of the form of the package area | region of the lead frame for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is AA sectional drawing of (a), (c) is ( It is BB sectional drawing of a). It is a figure explaining the vicinity area | region of the connection part in the lead frame for optical semiconductor devices which concerns on this invention. It is sectional drawing explaining the effect of the lead frame for optical semiconductor devices which concerns on this invention, (a) is an example of the lead frame of the form with which the recessed part was formed in the vicinity region of a connection part, (b) is the present invention. An example of a lead frame is shown. It is a top view which shows the other example of the lead frame for optical semiconductor devices which concerns on this invention. It is sectional drawing which shows an example of the lead frame for optical semiconductor devices with a resin concerning this invention. It is sectional drawing which shows an example of the optical semiconductor device which concerns on this invention. It is a typical process figure showing an example of a manufacturing method of a lead frame for optical semiconductor devices concerning the present invention. It is a typical process drawing showing an example of a manufacturing method of an optical semiconductor device using a lead frame for optical semiconductor devices concerning the present invention.

  Hereinafter, the lead frame for optical semiconductor devices, the lead frame for optical semiconductor devices with resin, and the optical semiconductor device of the present invention will be described in detail.

[Lead frame for optical semiconductor devices]
First, the lead frame for optical semiconductor devices of the present invention will be described. FIG. 1 is a plan view showing an example of a plate-like form of an optical semiconductor device lead frame according to the present invention, FIG. 2 is a partially enlarged view of an R region in FIG. 1, and FIG. It is explanatory drawing which shows an example of the form of the package area | region of the lead frame for optical semiconductor devices which concerns on this, (a) is a top view, (b) is AA sectional drawing of (a), (c) is (a). It is BB sectional drawing of.

  As shown in FIGS. 1 and 2, the lead frame for an optical semiconductor device according to the present invention is generally made of copper (Cu), a copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum or the like. A flat metal substrate as a material is collectively processed and formed in a multifaceted form. And after passing through each process of formation of light-reflective resin, mounting of an optical semiconductor element, and formation of translucent resin, it is cut | disconnected (dicing) in a package unit, and becomes an individual optical semiconductor device.

  As shown in FIG. 3, the lead frame for an optical semiconductor device according to the present invention comprises, for example, one unit package (one unit of optical semiconductor device) with two terminal portions, and one terminal portion of the lead frame. In many cases, the optical semiconductor element is placed on the front side, but the optical semiconductor element may be placed across the two terminal portions. In addition to the terminal portion, there may be a die pad portion on which the optical semiconductor element is placed.

  Further, when one unit of optical semiconductor device is configured using a plurality of optical semiconductor elements, the lead frame for an optical semiconductor device also configures one unit package with a plurality of terminal portions corresponding to each optical semiconductor element. In some cases.

  In the example shown in FIG. 1, the lead frame for an optical semiconductor device according to the present invention is in a form of being multifaceted on a flat metal substrate, and has a frame body region 2 having a rectangular outer shape, and a frame body. A plurality of package regions 3 arranged in a matrix in the region 2 are provided. The plurality of package regions 3 are connected to each other via a connecting portion (not shown) provided in the dicing region 4.

  As shown in FIG. 2, the optical semiconductor device lead frame 10 in the package region 3 includes a terminal portion 11 and a terminal portion 12 adjacent to the terminal portion 11. Each package region 3 is a region corresponding to an individual optical semiconductor device.

  As shown in FIG. 2, the terminal portion 12 in each package region 3 is connected to a terminal portion 11 in another package region 3 adjacent to the right by a connecting portion 13a. Further, the terminal portions 11 in each package region 3 are connected to the terminal portions 11 in other package regions 3 adjacent to the upper and lower portions thereof by connecting portions 13b. Similarly, the terminal portion 12 in each package region 3 is connected to the terminal portion 12 in another package region 3 adjacent above and below by the connecting portion 13c. Here, each of the connecting portions 13 a, 13 b, and 13 c is located in the dicing region 4. In addition, the terminal part 11 and the terminal part 12 in the package area | region 3 located in the outermost periphery are connected with the frame body area | region 2 by one or more of connection part 13a, 13b, 13c. Each connection part 13a, 13b, 13c is thinned by the half etching from the back surface side.

  In addition, a gap (penetrating portion) is formed between the terminal portion 11 and the terminal portion 12 in the lead frame 10 for an optical semiconductor device in one package region 3, and the terminal after being cut (diced). The part 11 and the terminal part 12 are electrically insulated from each other.

  Next, the configuration of the lead frame for an optical semiconductor device according to the present invention in the package region 3 shown in FIG. 2 will be described in more detail with reference to FIG.

  The lead frame for an optical semiconductor device according to the present invention includes a plurality of terminal portions integrally having internal terminals on the front surface side and external terminals on the back surface side of the metal substrate, each electrically independent of each other. A resin-sealed optical semiconductor device that is disposed, electrically connected to the internal terminal of the terminal portion and the terminal of the optical semiconductor element, and entirely sealed with resin so that the back surface of the terminal portion is exposed to the outside. A lead frame for an optical semiconductor device used, wherein the terminal portion has a connecting portion cut to an outer shape of the optical semiconductor device, and a concave portion is formed on a surface side of the terminal portion other than a region near the connecting portion. It is formed, The thickness of the said terminal part of the area | region near the said connection part is thicker than the thickness of the said terminal part of the area | region in which the said recessed part was formed, It is characterized by the above-mentioned.

  For example, as shown in FIG. 3A, the lead frame 10 for an optical semiconductor device according to the present invention has two terminal portions 11 and 12, and the surfaces of the terminal portions 11 and 12, respectively, It has a groove-like recess 14 formed along at least a part of the outer periphery of the optical semiconductor device lead frame 10. However, the groove-shaped concave portion 14 is formed on the surface of the terminal portions 11 and 12 other than the vicinity of the connecting portions 13a, 13b, and 13c, and is not formed in the vicinity of the connecting portions 13a, 13b, and 13c. It is a discontinuous form.

  In this case, the groove-shaped recess 14 is formed between the regions near the connecting portions 13a and 13b on the surface of the terminal portion 11, and between the regions near the connecting portions 13a and 13c on the surface of the terminal portion 12. Is formed. Further, the groove-shaped concave portion 14 is also formed between the vicinity of the connecting portion 13 b of the terminal portion 11 and the vicinity of the connecting portion 13 c of the terminal portion 12 on the surface of the terminal portions 11 and 12.

  For example, as shown in FIG. 3B, the thickness (thickness) of the terminal portion in the region where the recess 14 is formed is reduced by an amount corresponding to the depth of the recess 14. However, as shown in FIG. 3C, in the cross section connecting the connecting portion 13a of the terminal portion 11 and the connecting portion 13a of the terminal portion 12 (BB cross section in FIG. 3A), the concave portion 14 is formed. Since it is not formed, the thickness (thickness) of the terminal portion does not decrease by the amount corresponding to the depth of the recess 14. That is, the thickness of the terminal portions 11 and 12 in the vicinity of the connecting portion 13a is thicker than the thickness of the terminal portions 11 and 12 in the region where the concave portion 14 is formed. Here, in the example shown in FIG. 3C, the thickness of the vicinity region of the connecting portion 13a is equal to that of the metal substrate 21 before the etching process is performed. In addition, although not shown in the drawing, even if the thickness is not equivalent to that of the metal substrate, it functions as a reinforcing portion by leaving the thickness of the metal substrate thicker than the thickness of the portion where the recess is formed in a nearby region having a certain area. It is possible to make it.

  Here, the groove-like recess 14 is formed to improve the adhesion between the optical semiconductor device lead frame 10 and the resin, and is, for example, 0.03 mm to 0.03 mm from the outer periphery of the optical semiconductor device lead frame 10. Formed inside with a distance of 0.8 mm. The opening width (width in the direction perpendicular to the longitudinal direction) of the groove-shaped recess 14 is, for example, 0.05 mm to 1 mm. The depth of the groove-like recess 14 depends on the size of the opening width, but is, for example, about 1/4 to 3/4 of the thickness of the metal substrate 21 constituting the lead frame 10 for an optical semiconductor device. Preferably, it is 1/2 to 3/4 of the thickness of the metal substrate 21, and is typically about 1/2 of the thickness of the metal substrate 21.

  3B and 3C, the optical semiconductor device lead frame 10 includes a metal substrate 21 and a plating layer 22 formed on the metal substrate 21. In the present invention, in order to reduce the size and thickness of the optical semiconductor device, the terminals 11 and 12 constituting the optical semiconductor device lead frame 10 are electrically connected to the optical semiconductor element on the surfaces 11A and 12A side. Functions as an internal terminal (inner lead) connected to, and the back surface 11B, 12B side functions as an external terminal (outer lead) electrically connected to the external substrate.

  In this example, since the terminal portion 11 also functions as a die pad on which the optical semiconductor element is placed, the terminal portion 11 has a larger area than the adjacent terminal portion 12.

  Examples of the material of the metal substrate 21 include copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), aluminum, and the like. The thickness of the metal substrate 21 is preferably 0.05 mm to 0.5 mm, for example.

  The plating layer 22 is provided on the front and back surfaces of the metal substrate 21 constituting the terminal portions 11 and 12, and the front-side plating layer 22 functions as a reflection layer for reflecting light from the optical semiconductor element. . On the other hand, the plating layer 22 on the back side plays a role of increasing wettability with the solder when mounted on the external substrate. In the example shown in FIG. 3B, the plating layer 22 is provided on the entire front and back surfaces of the metal substrate 21 together with the terminal portion 11 and the terminal portion 12, but in the present invention, the plating layer 22 is provided. May be formed only on a desired portion of the front surface or the back surface of the terminal portions 11 and 12. For example, in order to improve the adhesion between the inner wall of the recess and the resin, the plating layer may not be formed inside the recess.

  The plating layer 22 is made of, for example, an electrolytic plating layer of silver (Ag), and has a thickness in the range of 0.02 μm to 12 μm, for example.

  Next, a region near the connecting portion in the lead frame for optical semiconductor devices according to the present invention will be described.

  FIG. 4 is a view for explaining the vicinity region of the connecting portion in the lead frame for optical semiconductor devices according to the present invention. The vicinity region of the connecting portion in the present invention is, for example, the region of the terminal portion corresponding to the base region of the connecting portion, and the size in the same direction as the width direction of the connecting portion is the size of the connecting portion. The width of the connecting portion is ¼ to 3/2 times the width of the connecting portion on both sides across the width center line, and the size in the same direction as the longitudinal direction of the connecting portion is the connecting portion. This is a region having a size that is 1/2 to 3 times the width of the portion.

  For example, as illustrated in FIG. 4, the vicinity region of the connecting portion is a substantially rectangular region represented by L2 × L3. Here, when the width of the connecting portion 13 is L1, L2 is parallel to L1, and the size of L2 is preferably, for example, 1/2 to 3 times larger than L1. Especially, it is more preferable that the size of L2 is larger than L1. On the other hand, L3 is perpendicular to L1 and has a size that is 1/2 to 3 times L1. Note that the center position of L1 and the center position of L2 coincide.

  In the lead frame for an optical semiconductor device according to the present invention, as described above, the vicinity region is determined based on the width of the connecting portion (the length of the base connected to the terminal portion), and the vicinity region of the connecting portion is In order to form the concave portion on the surface of the terminal portion other than the vicinity of the connecting portion without forming the concave portion that enhances the adhesion with the resin, the concave portion forms the thickness of the terminal portion in the vicinity of the connecting portion. It is possible to keep the thickness greater than the thickness of the formed region, and the plasticity of the lead frame for an optical semiconductor device due to cut stress when dicing the connecting portion while improving the adhesion between the lead frame for the optical semiconductor device and the resin Deformation can be prevented.

  The above effect will be described in more detail with reference to FIG. FIG. 5 is a cross-sectional view for explaining the effect of the lead frame for an optical semiconductor device according to the present invention. FIG. 5A is an example of a lead frame in which a recess is formed in the vicinity of the connecting portion. Shows an example of the lead frame of the present invention.

  As described above, the lead frame for an optical semiconductor device according to the present invention is generally formed in a lump in a form in which multiple faces are attached to a flat metal substrate. Then, as shown in FIG. 5, after the light-reflective resin 31, the optical semiconductor element 42, and the light-transmitting resin 44 are formed at predetermined portions, each connecting portion (not shown) such as the connecting portion 13a is diced. By doing so, an individualized optical semiconductor device is obtained.

In addition, each connection part, such as the connection part 13a at the time of dicing, has a form sandwiched between light-reflective resins 31 formed on the top and bottom. Since the resin such as the light reflecting resin 31 is hard and brittle, it is easy to be scraped in dicing. The stress of the direction that occurs is generated.
As shown in FIG. 5A, in the lead frame in which the concave portion 14 is formed in the vicinity of the connecting portion 13a, the thickness of the portion where the concave portion 14 is formed is the depth of the concave portion 14. Since the thickness is reduced by a size corresponding to the thickness, the strength is reduced accordingly, and the terminal portion 11 may be deformed by pulling the connecting portion.

  Further, when dicing, since a dicing blade that rotates at high speed is pressed from the surface side of the lead frame for an optical semiconductor device (the surface side on which the optical semiconductor element 42 is placed), each connecting portion such as the connecting portion 13a. The metal substrate 21 is pressed in the direction of the back surface of the lead frame for an optical semiconductor device and at the same time pulled in the direction of rotation of the dicing blade. 5A, in the lead frame in which the concave portion 14 is formed in the vicinity of the connecting portion 13a, the thickness of the portion where the concave portion 14 is formed is the depth of the concave portion 14. Since the thickness is reduced by the size corresponding to the thickness, the strength is reduced by that amount, and the terminal portion 11 may be deformed by the stress caused by the pressing of the dicing blade.

  If the terminal portion 11 is deformed by each stress as described above, the light reflecting resin 31 or the light transmitting resin 44 is damaged or peeled off.

  On the other hand, as shown in FIG. 5B, in the lead frame according to the present invention, since the recess 14 is not formed in the vicinity of the connecting portion 13a, the thickness of the terminal portion in the vicinity of the connecting portion 13a (see FIG. 5B). The thickness is not reduced by the amount corresponding to the depth of the recess 14. Therefore, the lead frame according to the present invention is stronger than the configuration shown in FIG. 5A, and has the effect of preventing the terminal portion 11 from being deformed as described above.

  In addition, in the example shown in FIG. 5, although the connection part 13a becomes a form pinched | interposed with the light-reflective resin 31 formed up and down, in this invention, each connection part, such as the connection part 13a. The resin that sandwiches the upper and lower sides is not limited to the light-reflective resin 31, and may be a translucent resin 44.

  Next, another embodiment of the lead frame for an optical semiconductor device according to the present invention will be described. FIG. 6 is a plan view showing another example of the lead frame for optical semiconductor devices according to the present invention.

  In the lead frame for an optical semiconductor device according to the present invention, a plurality of the recesses may be formed so as to run in parallel in a plan view. For example, as shown in FIG. 6A, in the lead frame 10 for an optical semiconductor device according to the present invention, a groove is formed on the inner peripheral side of the groove-shaped recess 14a formed along at least a part of the outer periphery. The recess 14b may be formed so as to run parallel to the groove-like recess 14a in plan view.

  With such a configuration, in addition to the effects of the above-described embodiment, the contact area between the lead frame for an optical semiconductor device and the resin can be further increased, so that the adhesion between the resin and the lead frame for an optical semiconductor device is improved. Can be increased. Also, for example, by forming a light-reflective resin on the groove-shaped recess on the outer peripheral side and forming a light-transmitting resin on the groove-shaped recess on the inner peripheral side, Adhesion with both the light reflecting resin and the light transmitting resin can be enhanced.

  6A shows an example in which two groove-shaped recesses on the outer peripheral side and the inner peripheral side are formed so as to run side by side in a plan view. The number of recesses is not limited to two and may be three or more.

  In addition, FIG. 6A shows an example in which both the terminal portion 11 and the groove-shaped concave portion formed in each of the terminal portions 12 are formed so as to run in parallel. In the invention, only one of the groove-like concave portions formed in the terminal portion 11 or the terminal portion 12 may be formed so as to run in parallel.

  In the lead frame for an optical semiconductor device according to the present invention, the recess may be formed in an arc shape at a corner portion of the lead frame for an optical semiconductor device. For example, as shown in FIG. 6B, the groove-shaped recess 14 may be formed in an arc shape in the corner portion 15 of the lead frame 10 for optical semiconductor devices.

  The radius of curvature of the center line in the width direction of the groove-like recess 14 formed in an arc shape is the distance of the groove-like recess in the direction parallel to the side surface where the terminal portion 11 and the terminal portion 12 face each other. In this case, the size is preferably 1/5 times to 1/2 times L4. For example, when L4 is 2 mm, the radius of curvature is preferably in the range of 0.4 mm to 1 mm.

  By adopting such a configuration, in the lead frame for an optical semiconductor device according to the present invention, when forming a light-reflective resin or a light-transmitting resin, which will be described later, the grooves do not hinder the flow of each resin. The resin can be easily filled into the concave portion.

  In the lead frame for an optical semiconductor device according to the present invention, the concave portion has a substantially circular shape or a substantially polygonal shape in plan view, and at least one of the outer circumferences of the lead frame for the optical semiconductor device. A plurality of the concave portions may be formed along the portion. For example, as shown in FIG. 6C, a plurality of substantially circular recesses 14 c may be formed along at least a part of the outer periphery of the optical semiconductor device lead frame 10. However, the recess 14c is not formed in the vicinity of the connecting portion, but is formed on the surface of the terminal portion other than the vicinity of the connecting portion.

  With such a configuration, in the lead frame for an optical semiconductor device according to the present invention, the thickness (thickness) of the terminal portion is formed by forming the recess while maintaining the adhesion between the lead frame for the optical semiconductor device and the resin. As a result, it is possible to reduce the area in which the lead is reduced, so that the strength of the lead frame for an optical semiconductor device can be maintained high.

  FIG. 6C shows an example in which the substantially circular recesses 14c are formed substantially in a line along the vicinity of the outer periphery of the optical semiconductor device lead frame 10 in plan view. The installation position may be other than the vicinity of the connecting portion, and may be randomly formed at an inner position. Further, the shape of the recess 14c is not limited to a substantially circular shape, and may be various polygonal shapes such as a rectangle and an L shape.

[Lead frames for optical semiconductor devices with resin]
Next, the lead frame for an optical semiconductor device with resin according to the present invention will be described. FIG. 7 is a sectional view showing an example of a lead frame for an optical semiconductor device with a resin according to the present invention. A lead frame for an optical semiconductor device with a resin according to the present invention includes the above-described lead frame for an optical semiconductor device according to the present invention and a light-reflecting resin that reflects light emitted from the optical semiconductor element.

The above-described light-reflective resin is made of, for example, a thermoplastic resin or a thermosetting resin, and is formed on the surface and side surfaces of the lead frame for an optical semiconductor device around the portion where the optical semiconductor element is placed. . As a method for forming the above-described light-reflective resin, for example, a method of inserting a lead frame into a resin mold and injecting the resin, such as injection molding or transfer molding, or screen printing a resin on the lead frame Can be used. Here, as described above, the terminal portion 11 and the terminal portion 12 according to the present invention function as internal terminals (inner leads) electrically connected to the optical semiconductor element on the front surface side, and on the back surface side as the external terminal. It functions as an external terminal (outer lead) electrically connected to the substrate.
Therefore, in the lead frame 30 for an optical semiconductor device with a resin according to the present invention, as shown in FIG. 7, the light reflecting resin 31 is not formed on the back surfaces of the terminal portion 11 and the terminal portion 12. The back surfaces of the terminal portions 11 and 12 are exposed.

  In addition, it is preferable that the light-reflective resin 31 is formed in the gap (through portion) formed between the terminal portion 11 and the terminal portion 12. The terminal portion 11 and the terminal portion 12 can be electrically insulated, and the light reaching the gap (penetrating portion) can be reflected with a high reflectance, thereby improving the light emission efficiency of the optical semiconductor device. Because it can.

  About the thermoplastic resin and thermosetting resin used for the above-mentioned light-reflective resin, it is particularly desirable to select a resin having excellent heat resistance, light resistance and mechanical strength. For example, as the thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, or the like can be used. As the thermosetting resin, silicone, epoxy, polyetherimide, polyurethane, polybutylene acrylate, or the like can be used. Furthermore, it is also possible to increase the light reflectance by adding any of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflecting agent in these resins. .

  The light reflective resin may contain an anisotropic filler. As the anisotropic filler contained in the light reflective resin, aluminum oxide, aluminum nitride, silica, or the like can be used. In particular, a modified cross-section glass fiber having a cross-sectional shape with a different minor axis and major axis is desirable from the viewpoint of reinforcement, and in particular, the minor axis D1 of the cross-section from the strength required for the optical semiconductor device, reflection, and processing characteristics during singulation Is a glass fiber having an average fiber length of 0.75 to 300 μm having a cross-sectional shape of 0.5 to 25 μm, a major axis D2 of a cross section of 0.6 to 300 μm, and a ratio D2 / D1 of D2 to D1 of 1.2 to 30 Preferably there is. The fiber diameter and fiber length can be obtained by randomly extracting a predetermined amount of glass fiber from an arbitrary point of the glass fiber laminate, pulverizing the extracted fiber with a mortar or the like, and measuring it with an image processing apparatus. it can. Thus, by including an anisotropic filler in the light-reflecting resin, it is possible to suppress warping of the lead frame for an optical semiconductor device in the two directions (X direction and Y direction) constituting the periphery of the frame body region 2. It becomes.

  In the present invention, the light reflective resin is preferably formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 7A, the light reflective resin 31 may be formed on the recess 14 provided in the terminal portions 11 and 12. By setting it as such a structure, the adhesiveness of the light reflection resin 31 and the terminal parts 11 and 12 which comprise the lead frame for optical semiconductor devices can be improved.

  In the present invention, for example, as shown in FIG. 7B, the light reflective resin 31 may be formed on the outer peripheral side of the recess 14. If it is such a structure, the translucent resin which seals an optical semiconductor element will be formed in the area | region enclosed by the light-reflective resin using the above lead frames for optical semiconductor devices with a resin. In this case, adhesion between the translucent resin and the optical semiconductor device lead frame can be improved.

  Although not shown, in the present invention, for example, using the optical semiconductor device lead frame having a plurality of groove-shaped recesses as shown in FIG. A light-reflective resin may be formed on the concave portion and a light-transmitting resin may be formed on the groove-shaped concave portion on the inner peripheral side. This is because by adopting such a configuration, it is possible to improve the adhesion between both the light-reflective resin and the light-transmitting resin and the lead frame for optical semiconductor devices.

[Optical semiconductor device]
Next, an optical semiconductor device according to the present invention will be described. FIG. 8 is a cross-sectional view showing an example of an optical semiconductor device according to the present invention. An optical semiconductor device according to the present invention includes an optical semiconductor device lead frame according to the present invention, an optical semiconductor element mounted on a surface of the optical semiconductor device lead frame, and the optical semiconductor element sealed. And a translucent resin that transmits at least part of the light emitted from the optical semiconductor element. In the optical semiconductor device according to the present invention, the above-described light-reflecting resin may be provided so as to surround the light-transmitting resin in plan view. For example, in the example shown in FIG. 8A, an optical semiconductor device 40 according to the present invention includes an optical semiconductor element 42 placed on the surface of the terminal portion 11 of the lead frame for an optical semiconductor device according to the present invention and a light transmission. A light-reflective resin 31 is provided so as to surround the translucent resin 44.

  As the above-described optical semiconductor element, for example, a conventionally used LED element can be used. Here, in the LED element, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, and AlInGaP or various GaN-based compound semiconductor single crystals such as InGaN as the light emitting layer, An emission wavelength ranging from ultraviolet light to infrared light can be selected.

  As a mounting form of the optical semiconductor element, for example, as shown in FIGS. 8A and 8B, one of the two terminal portions 11 and 12 is used as a die pad, for example, FIG. As shown in (c), there is a form that straddles the two terminal portions 11 and 12. Although not shown, there is also a form in which the optical semiconductor element is placed on a die pad part different from the terminal part.

  Also, for example, as shown in FIGS. 8A and 8B, the optical element 42 is fixedly mounted on the terminal portion 11 with a heat-dissipating adhesive 41 such as solder, and the bonding wire 43 causes the terminal portion 11 and Connected to the terminal portion 12.

  Here, when a die bonding paste is used instead of solder, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

  The bonding wire 43 is made of a material having good conductivity such as gold (Au), for example, and has one end connected to the optical semiconductor element 42 and the other end connected to the terminal portions 11 and 12. For the connection between the optical semiconductor element and the terminal portion, for example, as shown in FIG. 8C, instead of the bonding wire, a heat dissipating adhesive 41a having conductivity such as gold-gold bonding or soldering is used. , 41b, there is also a method of connecting to each terminal portion 11, 12. Further, the terminal of the optical semiconductor element is used for an optical semiconductor device by using ACF (anisotropic conductive film), ACP (anisotropic conductive paste), NCF (nonconductive film), NCP (nonconductive paste), or the like. There is also a method of directly joining the terminal portion of the lead frame.

  Next, the translucent resin will be described. As the translucent resin according to the present invention, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the optical semiconductor element in order to improve the light extraction efficiency. For example, an epoxy resin or a silicone resin can be selected as a resin that satisfies the characteristics of high heat resistance, light resistance, and high mechanical strength. In particular, when a high-brightness LED is used as the optical semiconductor element, the translucent resin is exposed to strong light. Therefore, the translucent resin is preferably made of a silicone resin having high light resistance.

  Since the light-reflective resin has already been described in the above-described lead frame for an optical semiconductor device with a resin according to the present invention, detailed description thereof is omitted here.

  In the optical semiconductor device of the present invention, it is preferable that the translucent resin is formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 8A, the translucent resin 44 is formed on the groove-like recess 14 provided in the terminal portion 11 and the groove-like recess 14 provided in the terminal portion 12. It may be. This is because, with such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the translucent resin and the optical semiconductor device lead frame can be enhanced.

  In the optical semiconductor device of the present invention, it is preferable that the light reflecting resin is formed on at least a part of the groove-shaped recess. For example, as shown in FIG. 8B, the light-reflective resin 31 is formed on the groove-like recess 14 provided in the terminal portion 11 and the groove-like recess 14 provided in the terminal portion 12. It may be. This is because, with such a configuration, in the optical semiconductor device according to the present invention, the adhesion between the light-reflecting resin and the optical semiconductor device lead frame can be improved.

  Although not shown, in the present invention, for example, using the lead frame for an optical semiconductor device having a plurality of groove-shaped recesses as shown in FIG. A light-reflective resin may be formed on the concave portion and a light-transmitting resin may be formed on the groove-shaped concave portion on the inner peripheral side. This is because by adopting such a configuration, it is possible to improve the adhesion between both the light-reflective resin and the light-transmitting resin and the lead frame for optical semiconductor devices.

[Method for manufacturing lead frame for optical semiconductor device]
Next, a method for manufacturing a lead frame for optical semiconductor devices according to the present invention will be described. FIG. 8 is a schematic process diagram showing an example of a method for manufacturing an optical semiconductor device lead frame according to the present invention.

  First, as shown in FIG. 9A, a flat metal substrate 21 is prepared. As the metal substrate 21, a metal substrate made of copper, copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy) or the like can be used as described above. In addition, it is preferable to use what the metal substrate 21 performed the degreasing | defatting etc. to the both surfaces, and performed the washing process.

  Next, resist patterns 51a and 51b are respectively formed on the front and back surfaces of the metal substrate 21 (FIG. 9B). Conventionally known resists for etching can be used as the resist patterns 51a and 51b and the forming method thereof.

  Next, the metal substrate 21 is etched using the resist patterns 51a and 51b as an etching resistant film (FIG. 9C), and then the resist patterns 51a and 51b are removed (FIG. 9D). The etching solution used for the above-described etching can be appropriately selected according to the material of the metal substrate 21 to be used. For example, when copper is used as the metal substrate 21, a ferric chloride aqueous solution is usually used and the metal substrate It can carry out by spray etching from both sides of 21.

  By this etching process, the outer shape of the terminal portion 11 and the terminal portion 12, the opening 61 that insulates the terminal portion 11 and the terminal portion 12, and the concave portion 14 are formed at the same time. Although omitted in FIG. 9, the terminal portion 11 and the terminal portion 12 in this process step are multifaceted via the connecting portions 13 a, 13 b, and 13 c, for example, as shown in FIG. 2 described above. It has a form.

  Next, the plating layer 22 is formed on the entire surface of the metal substrate 21 constituting the terminal portion 11 and the terminal portion 12 by performing, for example, electrolytic plating using a silver plating solution mainly composed of silver cyanide, The lead frame 1 for optical semiconductor devices according to the present invention can be obtained (FIG. 9E). In addition, before forming the plating layer 22, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating layer 22 may be formed through an electrolytic plating process.

  9A to 9E show a method for manufacturing the optical semiconductor device lead frame 1 by etching, but in the present invention, a manufacturing method using a press may be used.

[Method for manufacturing lead frame for optical semiconductor device with resin and method for manufacturing optical semiconductor device]
Next, a method for manufacturing a lead frame for an optical semiconductor device with resin according to the present invention and a method for manufacturing an optical semiconductor device will be described. FIG. 10 is a schematic process diagram showing an example of a method of manufacturing an optical semiconductor device using the optical semiconductor device lead frame according to the present invention.

  First, as shown in FIG. 10 (a), by forming a light-reflective resin 31 on the surface and side surfaces of the lead frame for an optical semiconductor device according to the present invention obtained by the above-described steps, etc. Such a resin-coated optical semiconductor device lead frame 30 is obtained. The light reflective resin 31 can be formed, for example, by injection molding or transfer molding of a thermoplastic resin using a mold processed into a desired shape, whereby a lead frame for an optical semiconductor device is formed. And the light reflecting resin 31 are integrally coupled.

  By the way, when the thermoplastic resin is injection-molded, the thermoplastic resin flows between the terminal portions 11 and 12 in parallel with one of the two directions constituting the periphery of the frame body region 2. For example, the thermoplastic resin flows between the terminal portions 11 and 12 in parallel to the vertical direction or the horizontal direction in FIG. During this time, the thermoplastic resin collides with the side surfaces of the connecting portions 13a, 13b, 13c (surfaces parallel to the longitudinal direction of the connecting portions 13a, 13b, 13c) substantially perpendicularly. In this case, the thermoplastic resin gets over the connecting portions 13a, 13b, and 13c, and a part thereof flows from the surface of the connecting portions 13a, 13b, and 13c to the surface side of the terminal portions 11 and 12.

On the other hand, in this invention, the recessed part 14 is not formed in the vicinity area | region of the connection parts 13a, 13b, 13c among the surfaces of the terminal parts 11 and 12. FIG. Therefore, the resin that has flowed from the connecting portions 13a, 13b, and 13c to the surface side of the terminal portions 11 and 12 does not flow in a complicated manner. Thereby, the flow of the thermoplastic resin is not greatly disturbed, or the flow of the thermoplastic resin is not hindered, and the thermoplastic resin can be smoothly flowed in a certain direction. As a result, it is possible to prevent defects such as voids from occurring around the connecting portions 13a, 13b, and 13c.
In particular, when the anisotropic filler is included in the thermoplastic resin, the flow direction dependency is large, so that the orientation of the anisotropic filler can be prevented from becoming uneven.

  Next, as shown in FIG. 10B, the optical semiconductor element 42 is placed on the terminal portion 11 via a heat-dissipating adhesive 41 such as solder, and the optical semiconductor element 42 and the terminal are connected by bonding wires 43. The part 11 and the terminal part 12 are electrically connected.

  Next, as shown in FIG. 10C, the surface of the terminal portion 11 and the terminal portion 12 in the region surrounded by the light-reflecting resin 31 is filled with a light-transmitting resin 44, and light is transmitted by the light-transmitting resin 44. The semiconductor element 42 is sealed.

  Next, by using a conventional method or the like, the light reflecting resin 31 and the connecting portions 13a, 13b, and 13c (not shown) in the dicing region 4 are cut (FIG. 10 (d)), and the present invention is applied. An optical semiconductor device 40 is obtained (FIG. 10E).

  According to the present invention, the concave portion 14 is formed on the surface side surface of the terminal portions 11 and 12 other than the vicinity region of the connecting portion, and the concave portion 14 is not formed in the vicinity region of the connecting portion. The thickness of the terminal portion in the vicinity of the connecting portion can be kept thicker than the thickness of the region in which the concave portion is formed, and while improving the adhesion between the lead frame for an optical semiconductor device and the resin, Plastic deformation of the lead frame for an optical semiconductor device due to cut stress when dicing the connecting portion can be prevented.

  The lead frame for an optical semiconductor device, the lead frame for an optical semiconductor device with resin, and the optical semiconductor device according to the present invention have been described above, but the present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the technical idea described in the claims of the present invention has substantially the same configuration and exhibits the same function and effect regardless of the case. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Lead frame for optical semiconductor devices 2 ... Frame region 3 ... Package region 4 ... Dicing region 10 ... Lead frame for optical semiconductor devices 11, 12 ... Terminal portion 13, 13a , 13b, 13c ... connecting part 14, 14a, 14b, 14c ... concave part 15 ... corner part 21 ... metal substrate 22 ... plating layer 30 ... lead frame for optical semiconductor device with resin DESCRIPTION OF SYMBOLS 31 ... Light reflective resin 40 ... Optical semiconductor device 41, 41a, 41b ... Heat radiation adhesive 42 ... Optical semiconductor element 43 ... Bonding wire 44 ... Translucent resin 51a, 51b... Resist pattern 61.

Claims (14)

In a lead frame for an optical semiconductor device that is used in a resin-encapsulated optical semiconductor device and includes a plurality of terminal portions,
A connecting portion that is cut to the outer shape of the optical semiconductor device is connected to each terminal portion,
Of the surface of each of the terminal portions, a recess is formed between adjacent regions of the connecting portions ,
The recess is formed in a groove shape along at least a part of the outer periphery of the lead frame for an optical semiconductor device in plan view,
A lead frame for an optical semiconductor device , wherein a plurality of the concave portions are formed so as to run in parallel in a plan view . 2. The lead frame for an optical semiconductor device according to claim 1 , wherein the concave portion is formed in an arc shape at a corner portion of the lead frame for the optical semiconductor device. In a lead frame for an optical semiconductor device that is used in a resin-encapsulated optical semiconductor device and includes a plurality of terminal portions,
A connecting portion that is cut to the outer shape of the optical semiconductor device is connected to each terminal portion,
Of the surface of each of the terminal portions, a recess is formed between adjacent regions of the connecting portions,
The concave portion has a substantially circular or substantially polygonal shape in plan view, and a plurality of the concave portions are formed along at least a part of the outer periphery of the lead frame for an optical semiconductor device. for an optical semiconductor device said lead frame. In a lead frame for an optical semiconductor device that is used in a resin-encapsulated optical semiconductor device and includes a plurality of terminal portions,
A connecting portion that is cut to the outer shape of the optical semiconductor device is connected to each terminal portion,
Of the surface of each of the terminal portions, a recess is formed between adjacent regions of the connecting portions,
At least a pair of the connecting portions are connected to each of the terminal portions,
Of the surface of each of the terminal portions, the recess is formed between regions near the pair of connecting portions. Of the surface of each of the terminal portions, both of the recesses are formed in the vicinity of the pair of connecting portions. lead frame for an optical semiconductor device you characterized in that not. The connecting portion, the lead frame for an optical semiconductor device according to any one of claims 1 to 4, characterized in that it is thinned from the back side. The said connection part is connected with one side of the said terminal part in multiple numbers, The said recessed part is formed between the adjacent areas | regions of the said some connection part, The 1st Claim of Claim 1-5 characterized by the above-mentioned. The lead frame for optical semiconductor devices as described in any one. The connecting portion is connected to one side of the terminal portion and another side connected to the side, and the concave portion is formed between adjacent regions of the connecting portion. The lead frame for optical semiconductor devices according to any one of claims 1 to 6 . In a lead frame for an optical semiconductor device that is used in a resin-encapsulated optical semiconductor device and includes a plurality of terminal portions,
A connecting portion that is cut to the outer shape of the optical semiconductor device is connected to each terminal portion,
Of the surface of each of the terminal portions, a recess is formed between adjacent regions of the connecting portions,
A lead frame for an optical semiconductor device, wherein a recess is not formed in a region in the vicinity of each connecting portion of the surface of each terminal portion. An optical semiconductor device with resin, comprising: the lead frame for an optical semiconductor device according to any one of claims 1 to 8 ; and a light reflective resin that reflects light emitted from the optical semiconductor element. Lead frame. The lead frame for an optical semiconductor device with a resin according to claim 9 , wherein the light reflective resin is formed on at least a part of the recess. A lead frame for an optical semiconductor device according to any one of claims 1 to 8 , an optical semiconductor element placed on a surface of the lead frame for an optical semiconductor device, and the optical semiconductor element are sealed, and at least An optical semiconductor device comprising: a translucent resin that transmits part of light emitted from the optical semiconductor element. The optical semiconductor device according to claim 11 , wherein a light reflective resin that reflects light emitted from the optical semiconductor element is provided so as to surround the translucent resin in a plan view. The optical semiconductor device according to any one of claims 11 to 12 , wherein the translucent resin is formed on at least a part of the recess. The optical semiconductor device according to any one of claims 12 to 13 , wherein a light-reflecting resin is formed on at least a part of the recess.

Images