JP2013042127A - リソグラフィ装置、リソグラフィ装置の支持テーブル及びデバイス製造方法 - Google Patents

リソグラフィ装置、リソグラフィ装置の支持テーブル及びデバイス製造方法 Download PDF

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Publication number
JP2013042127A
JP2013042127A JP2012167085A JP2012167085A JP2013042127A JP 2013042127 A JP2013042127 A JP 2013042127A JP 2012167085 A JP2012167085 A JP 2012167085A JP 2012167085 A JP2012167085 A JP 2012167085A JP 2013042127 A JP2013042127 A JP 2013042127A
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Japan
Prior art keywords
substrate
adjustment
thermal energy
support table
support
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Pending
Application number
JP2012167085A
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English (en)
Japanese (ja)
Inventor
Johann Gertrudix Cornelis Kunen
クネン，ヨハン，ヘルトルディス，コルネリス
Johannes Henricus Wilhelmus Jacobs
ヤコブス，ヨハネス，ヘンリカス，ウィルヘルムス
Coen Cornelis Wilhelmus Verspaget
フェルスパゲート，コーエン，コルネリス，ウィルヘルムス
Der Ham Ronald Van
デル ハム，ロナルド ヴァン
Ivo Adam Johannes Thomas
トーマス，イヴォ，アダム，ヨハネス
Martijn Houben
フーベン，マーティン
Thibaud Simon Matthew Laurent
ローラン，ティボー，サイモン，マチュー
Martin Mason Corcoran Gregory
コルコラン，グレゴリー，マーティン，マソン
Ruud Hendrikus Martinus Johannes Bloks
ブロックス，ルート，ヘンドリカス，マルティヌス，ヨハネス
Peters Gerben
ピーテルス，ゲルベン
Pieter Lein Joseph Gunther
ギュンター，ピーター，レイン，ヨセフ
Marinus Jan Remie
レミエ，マリヌス，ヤン
Catharina Reinier Derks Sander
ダークス，サンダー，キャサリナ，ライナー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
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ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of JP2013042127A publication Critical patent/JP2013042127A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Microscoopes, Condenser (AREA)
JP2012167085A 2011-08-18 2012-07-27 リソグラフィ装置、リソグラフィ装置の支持テーブル及びデバイス製造方法 Pending JP2013042127A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161524960P 2011-08-18 2011-08-18
US61/524,960 2011-08-18

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JP2013042127A true JP2013042127A (ja) 2013-02-28

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JP2015003993A Active JP6080875B2 (ja) 2011-08-18 2015-01-13 リソグラフィ装置、リソグラフィ装置の支持テーブル及びデバイス製造方法

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Country Status (7)

Country Link
US (3) US9897928B2 (https=)
EP (1) EP2560050A1 (https=)
JP (2) JP2013042127A (https=)
KR (2) KR20130020636A (https=)
CN (1) CN102981370B (https=)
SG (1) SG188036A1 (https=)
TW (1) TWI512408B (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
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JP2013042128A (ja) * 2011-08-17 2013-02-28 Asml Netherlands Bv リソグラフィ装置の支持テーブル、リソグラフィ装置及びデバイス製造方法
JP2016012593A (ja) * 2014-06-27 2016-01-21 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP2017526952A (ja) * 2014-07-23 2017-09-14 エーエスエムエル ネザーランズ ビー．ブイ． 調節システム及び調節システムを備えるリソグラフィ装置
US9835957B2 (en) 2013-09-27 2017-12-05 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
KR102002625B1 (ko) * 2018-06-11 2019-07-22 한국표준과학연구원 확장된 검사 영역을 갖는 웨이퍼 센서, 및 이를 이용한 건식 공정 장치
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

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EP2856262B1 (en) 2012-05-29 2019-09-25 ASML Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
JP2016522568A (ja) * 2013-04-09 2016-07-28 エーエスエムエル ネザーランズ ビー．ブイ． 支持構造、その温度を制御する方法、及びそれを含む装置
JP6216460B2 (ja) 2013-08-30 2017-10-18 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィ装置
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
NL2015579A (en) * 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
CN104614951B (zh) * 2015-03-04 2016-10-19 京东方科技集团股份有限公司 曝光装置和曝光方法
WO2017060259A1 (en) * 2015-10-06 2017-04-13 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
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WO2019096554A1 (en) 2017-11-20 2019-05-23 Asml Netherlands B.V. Substrate holder, substrate support and method of clamping a substrate to a clamping system
CN110554572B (zh) * 2018-05-31 2020-10-16 上海微电子装备（集团）股份有限公司 吸盘
US11500298B2 (en) 2018-12-21 2022-11-15 Asml Holding N.V. Reticle sub-field thermal control
WO2020259930A1 (en) * 2019-06-28 2020-12-30 Asml Netherlands B.V. Substrate handling system of a lithography apparatus and method thereof
US11450552B2 (en) * 2019-08-01 2022-09-20 Micron Technology, Inc. Methods and apparatus for adjusting surface topography of a substrate support apparatus
US11966165B2 (en) * 2021-01-22 2024-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion exposure tool

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US10324382B2 (en) 2011-08-17 2019-06-18 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US8970822B2 (en) 2011-08-17 2015-03-03 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US11650511B2 (en) 2011-08-17 2023-05-16 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US9575419B2 (en) 2011-08-17 2017-02-21 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US9740110B2 (en) 2011-08-17 2017-08-22 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US10747126B2 (en) 2011-08-17 2020-08-18 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US9971252B2 (en) 2011-08-17 2018-05-15 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
JP2013042128A (ja) * 2011-08-17 2013-02-28 Asml Netherlands Bv リソグラフィ装置の支持テーブル、リソグラフィ装置及びデバイス製造方法
US9835957B2 (en) 2013-09-27 2017-12-05 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
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JP2016012593A (ja) * 2014-06-27 2016-01-21 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
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JP2017526952A (ja) * 2014-07-23 2017-09-14 エーエスエムエル ネザーランズ ビー．ブイ． 調節システム及び調節システムを備えるリソグラフィ装置
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JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
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WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

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US11300890B2 (en) 2022-04-12
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US9897928B2 (en) 2018-02-20
US20130045447A1 (en) 2013-02-21
SG188036A1 (en) 2013-03-28
CN102981370A (zh) 2013-03-20
JP6080875B2 (ja) 2017-02-15
US20180284627A1 (en) 2018-10-04
US10520837B2 (en) 2019-12-31
KR101932995B1 (ko) 2018-12-27
EP2560050A1 (en) 2013-02-20
US20200124993A1 (en) 2020-04-23
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