KR20130020636A - 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법 - Google Patents

리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR20130020636A
KR20130020636A KR1020120090212A KR20120090212A KR20130020636A KR 20130020636 A KR20130020636 A KR 20130020636A KR 1020120090212 A KR1020120090212 A KR 1020120090212A KR 20120090212 A KR20120090212 A KR 20120090212A KR 20130020636 A KR20130020636 A KR 20130020636A
Authority
KR
South Korea
Prior art keywords
conditioning
support
substrate
support table
thermal energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120090212A
Other languages
English (en)
Korean (ko)
Inventor
요한 게르트루디스 코르넬리스 쿤넨
요한네스 헨리쿠스 빌헬무스 야콥스
코엔 코르넬리스 빌헬무스 베르스파게트
로날드 반 데르 함
이보 아담 요한네스 토마스
마틴 호우벤
티보 시몬 마티유 로랑
그레고리 마르틴 마슨 코르코란
루드 헨드리쿠스 마르티누스 요한네스 브룩스
거벤 피에터즈
피터르 레인 요제프 군터
마리누스 얀 레미에
산더르 카타리나 레이니어 더크스
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20130020636A publication Critical patent/KR20130020636A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Microscoopes, Condenser (AREA)
KR1020120090212A 2011-08-18 2012-08-17 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법 Ceased KR20130020636A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161524960P 2011-08-18 2011-08-18
US61/524,960 2011-08-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020150089792A Division KR101932995B1 (ko) 2011-08-18 2015-06-24 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR20130020636A true KR20130020636A (ko) 2013-02-27

Family

ID=46754325

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020120090212A Ceased KR20130020636A (ko) 2011-08-18 2012-08-17 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법
KR1020150089792A Active KR101932995B1 (ko) 2011-08-18 2015-06-24 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020150089792A Active KR101932995B1 (ko) 2011-08-18 2015-06-24 리소그래피 장치, 리소그래피 장치용 지지 테이블 및 디바이스 제조 방법

Country Status (7)

Country Link
US (3) US9897928B2 (https=)
EP (1) EP2560050A1 (https=)
JP (2) JP2013042127A (https=)
KR (2) KR20130020636A (https=)
CN (1) CN102981370B (https=)
SG (1) SG188036A1 (https=)
TW (1) TWI512408B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
JP6006406B2 (ja) 2012-05-29 2016-10-12 エーエスエムエル ネザーランズ ビー．ブイ． オブジェクトホルダ及びリソグラフィ装置
EP2856262B1 (en) 2012-05-29 2019-09-25 ASML Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
JP2016522568A (ja) * 2013-04-09 2016-07-28 エーエスエムエル ネザーランズ ビー．ブイ． 支持構造、その温度を制御する方法、及びそれを含む装置
JP6216460B2 (ja) 2013-08-30 2017-10-18 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィ装置
US9541846B2 (en) 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
JP6018606B2 (ja) * 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
WO2016012175A1 (en) 2014-07-23 2016-01-28 Asml Netherlands B.V. Conditioning system and lithographic apparatus comprising a conditioning system
NL2015579A (en) * 2014-10-23 2016-08-30 Asml Netherlands Bv Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method.
CN104614951B (zh) * 2015-03-04 2016-10-19 京东方科技集团股份有限公司 曝光装置和曝光方法
WO2017060259A1 (en) * 2015-10-06 2017-04-13 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
NL2020011A (en) 2017-01-26 2018-08-01 Asml Netherlands Bv A lithography apparatus and a method of manufacturing a device
WO2019096554A1 (en) 2017-11-20 2019-05-23 Asml Netherlands B.V. Substrate holder, substrate support and method of clamping a substrate to a clamping system
CN110554572B (zh) * 2018-05-31 2020-10-16 上海微电子装备（集团）股份有限公司 吸盘
KR102002625B1 (ko) * 2018-06-11 2019-07-22 한국표준과학연구원 확장된 검사 영역을 갖는 웨이퍼 센서, 및 이를 이용한 건식 공정 장치
US11500298B2 (en) 2018-12-21 2022-11-15 Asml Holding N.V. Reticle sub-field thermal control
WO2020259930A1 (en) * 2019-06-28 2020-12-30 Asml Netherlands B.V. Substrate handling system of a lithography apparatus and method thereof
US11450552B2 (en) * 2019-08-01 2022-09-20 Micron Technology, Inc. Methods and apparatus for adjusting surface topography of a substrate support apparatus
US11966165B2 (en) * 2021-01-22 2024-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion exposure tool
JP2022125685A (ja) 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
FR2631165B1 (fr) * 1988-05-05 1992-02-21 Moulene Daniel Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support
US5001423A (en) * 1990-01-24 1991-03-19 International Business Machines Corporation Dry interface thermal chuck temperature control system for semiconductor wafer testing
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
US5873769A (en) * 1997-05-30 1999-02-23 Industrial Technology Research Institute Temperature compensated chemical mechanical polishing to achieve uniform removal rates
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
DE19822000C2 (de) * 1998-05-15 2002-04-18 Infineon Technologies Ag Prüfverfahren für integrierte Schaltungen auf einem Wafer
JP3764278B2 (ja) * 1998-07-13 2006-04-05 株式会社東芝 基板加熱装置、基板加熱方法及び基板処理方法
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
US6322626B1 (en) * 1999-06-08 2001-11-27 Micron Technology, Inc. Apparatus for controlling a temperature of a microelectronics substrate
TW541224B (en) * 2001-12-14 2003-07-11 Promos Technologies Inc Chemical mechanical polishing (CMP) apparatus with temperature control
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
JP2005315707A (ja) 2004-04-28 2005-11-10 Nikon Corp 温度計測装置、露光装置、およびデバイス製造方法
JP5119666B2 (ja) * 2004-06-21 2013-01-16 株式会社ニコン 露光装置、液体除去方法、及びデバイス製造方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI281833B (en) 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP4444090B2 (ja) * 2004-12-13 2010-03-31 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7649611B2 (en) * 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007258286A (ja) 2006-03-22 2007-10-04 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
US7427728B2 (en) 2006-07-07 2008-09-23 Sokudo Co., Ltd. Zone control heater plate for track lithography systems
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
JP2008262963A (ja) 2007-04-10 2008-10-30 Canon Inc 液浸露光装置およびデバイス製造方法
US20080304025A1 (en) 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20090075012A1 (en) * 2007-09-13 2009-03-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1036835A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic Apparatus and Method.
US8421993B2 (en) 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2131241B1 (en) 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
NL2003341A (en) * 2008-08-22 2010-03-10 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8404572B2 (en) 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
NL2004980A (en) 2009-07-13 2011-01-17 Asml Netherlands Bv Heat transfers assembly, lithographic apparatus and manufacturing method.
NL2005089A (nl) 2009-09-23 2011-03-28 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
JP5269128B2 (ja) 2010-03-12 2013-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
NL2006913A (en) * 2010-07-16 2012-01-17 Asml Netherlands Bv Lithographic apparatus and method.
CN102064086A (zh) 2010-10-14 2011-05-18 清华大学 激光热处理装置中的分区加热片台和加热方法
NL2008751A (en) * 2011-06-06 2012-12-10 Asml Netherlands Bv Temperature sensing probe, burl plate, lithographic apparatus and method.
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
US20140356985A1 (en) * 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
CN105474381B (zh) * 2014-07-23 2018-06-05 应用材料公司 可调谐温度受控的基板支撑组件
JP6481636B2 (ja) * 2016-02-16 2019-03-13 東京エレクトロン株式会社 熱板の温度測定装置及び熱板の温度測定方法

Also Published As

Publication number Publication date
JP2013042127A (ja) 2013-02-28
TWI512408B (zh) 2015-12-11
KR20150082145A (ko) 2015-07-15
JP2015065482A (ja) 2015-04-09
CN102981370B (zh) 2015-08-05
US11300890B2 (en) 2022-04-12
TW201314378A (zh) 2013-04-01
US9897928B2 (en) 2018-02-20
US20130045447A1 (en) 2013-02-21
SG188036A1 (en) 2013-03-28
CN102981370A (zh) 2013-03-20
JP6080875B2 (ja) 2017-02-15
US20180284627A1 (en) 2018-10-04
US10520837B2 (en) 2019-12-31
KR101932995B1 (ko) 2018-12-27
EP2560050A1 (en) 2013-02-20
US20200124993A1 (en) 2020-04-23

Similar Documents

Publication Publication Date Title
US11300890B2 (en) Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
US20230280663A1 (en) Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
JP4921516B2 (ja) リソグラフィ装置及び方法
KR101152834B1 (ko) 리소그래피 장치 및 디바이스 제조방법
KR101118659B1 (ko) 리소그래피 장치 및 방법
CN105683839B (zh) 用于光刻设备的支撑台、光刻设备以及器件制造方法
KR20120098494A (ko) 리소그래피 장치, 리소그래피 장치를 제어하는 방법 및 디바이스 제조 방법
JP6083975B2 (ja) 流体ハンドリング構造、液浸リソグラフィ装置及びリソグラフィ装置を操作する方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PC1202 Submission of document of withdrawal before decision of registration

St.27 status event code: N-1-6-B10-B11-nap-PC1202

WITB Written withdrawal of application
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000