JP2013027036A - マイクロ波回路の性能を高めるための共鳴バイパス・コンデンサ - Google Patents
マイクロ波回路の性能を高めるための共鳴バイパス・コンデンサ Download PDFInfo
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- JP2013027036A JP2013027036A JP2012113760A JP2012113760A JP2013027036A JP 2013027036 A JP2013027036 A JP 2013027036A JP 2012113760 A JP2012113760 A JP 2012113760A JP 2012113760 A JP2012113760 A JP 2012113760A JP 2013027036 A JP2013027036 A JP 2013027036A
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- bypass circuit
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- 239000003990 capacitor Substances 0.000 title claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 abstract description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/665—Bias feed arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Waveguide Connection Structure (AREA)
- Filters And Equalizers (AREA)
Abstract
【解決手段】バイアス接続用のバイパス回路は、コイルと直列のコンデンサを備え、その直列結合がバイアス導体とアースの間に接続される。この直列結合により、動作周波数での反射減衰量が低くなる。他の周波数で損失を与えるために、バイパス回路内にデキューイング回路18を含んでもよい。
【選択図】図1
Description
12 ボンド・パッド接続
14 アース接続
16 共振バイパス・コンデンサ
18 デキューイング回路
Claims (13)
- 動作周波数で実質的に零の、アースに対するインピーダンスをバイアス接続にて与えるための、マイクロ波回路におけるバイパス回路であって、
アースに接続されたコイルと直列に接続されたコンデンサを備え、
前記コイルと前記コンデンサの結合が前記動作周波数で共振するバイパス回路。 - 予め定められた長さと幅の、アースへの導電経路を与えることにより、前記コイルが形成される、請求項1に記載のバイパス回路。
- 前記コンデンサが、モノリシック・マイクロ波集積回路(MMIC)プロセスにて製作された金属−絶縁体−金属(MIM)キャパシタである、請求項1に記載のバイパス回路。
- 前記MIMキャパシタへの接続がエア・ブリッジを用いて作られる、請求項3に記載のバイパス回路。
- 動作周波数で実質的に零の、アースに対するインピーダンスをバイアス接続にて与えるための、マイクロ波回路におけるバイパス回路であって、
第1のコンデンサと、
第1のコイルとを備え、
前記コイルが前記コンデンサとアースの間に接続され、
前記コンデンサが前記バイアス接続と前記コイルとデキューイング回路の間に接続される、バイパス回路。 - 前記デキューイング回路が、
抵抗器と、
第2のコンデンサと、
第2のコイルとを備え、
前記抵抗器、前記第2のコンデンサおよび前記第2のコイルが前記バイアス接続とアースの間に直列に接続される、請求項5に記載のバイパス回路。 - 前記第2のコンデンサと前記第2のコイルの結合が前記動作周波数より低い周波数で共振する、請求項6に記載のバイパス回路。
- 予め定められた長さと幅の、アースへの導電経路を与えることにより、前記第1のコイルが形成される、請求項5に記載のバイパス回路。
- 前記第1および第2のコンデンサが、モノリシック・マイクロ波集積回路(MMIC)プロセスにて製作された金属−絶縁体−金属(MIM)キャパシタである、請求項6に記載のバイパス回路。
- 予め定められた長さと幅の導電経路として前記第2のコイルが形成される、請求項6に記載のバイパス回路。
- モノリシック・マイクロ波集積回路(MMIC)上のバイアス接続にてバイパス回路を形成する方法であって、
前記バイアス接続に接続された第1のコンデンサを設けるステップと、
前記第1のコンデンサとアースの間に接続された第1のコイルを設けるステップと、
前記バイアス接続とアースの間に接続されたデキューイング回路を設けるステップと
を含む方法。 - デキューイング回路を設ける前記ステップが、
前記バイアス接続に接続された抵抗器を設けるステップと、
前記抵抗器に接続された第2のコイルを設けるステップと、
前記第2のコイルとアースの間に接続された第2のコンデンサを設けるステップと
を含む、請求項11に記載の方法。 - 前記バイアス接続に接続された前記第1のコンデンサを設ける前記ステップが、
前記MMICの基板上に第1の金属層を形成するステップと、
前記第1の金属層の上に誘電体層を形成するステップと、
前記誘電体の上に第2の金属層を形成するステップと、
前記バイアス接続と前記第2の金属層の間にエア・ブリッジを形成するステップと
を含む、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/185,053 US8653907B2 (en) | 2011-07-18 | 2011-07-18 | Resonated bypass capacitor for enhanced performance of a microwave circuit |
US13/185,053 | 2011-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013027036A true JP2013027036A (ja) | 2013-02-04 |
JP5432329B2 JP5432329B2 (ja) | 2014-03-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012113760A Active JP5432329B2 (ja) | 2011-07-18 | 2012-05-17 | マイクロ波回路の性能を高めるための共鳴バイパス・コンデンサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8653907B2 (ja) |
EP (1) | EP2549644A1 (ja) |
JP (1) | JP5432329B2 (ja) |
TW (1) | TWI515951B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10063211B2 (en) | 2016-02-03 | 2018-08-28 | Qualcomm Incorporated | Compact bypass and decoupling structure for millimeter-wave circuits |
KR20190025690A (ko) * | 2016-07-05 | 2019-03-11 | 레이던 컴퍼니 | 저항성 비아와 함께 디-큐잉 섹션을 갖는 증폭된 마이크로파 모놀리식 집적 회로(mmic) |
CN106067770B (zh) * | 2016-07-05 | 2019-02-15 | 成都泰格微电子研究所有限责任公司 | 2.7-3.5GHz 2W GaN单片功率放大器及设计方法 |
EP3849286A1 (en) * | 2020-01-09 | 2021-07-14 | Murata Manufacturing Co., Ltd. | Electronic device with differential transmission lines equipped with 3d capacitors supported by a base, and corresponding manufacturing method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1188080A (ja) * | 1997-09-12 | 1999-03-30 | Mitsubishi Electric Corp | 高周波増幅回路とマイクロ波集積回路 |
JP2000106510A (ja) * | 1998-09-28 | 2000-04-11 | Mitsubishi Electric Corp | 高周波電力増幅器 |
JP2004516737A (ja) * | 2000-12-21 | 2004-06-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | コンパクトなカスコード無線周波数cmos電力増幅器 |
JP2011082809A (ja) * | 2009-10-07 | 2011-04-21 | Ntt Docomo Inc | バイアス回路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5260862A (en) * | 1991-03-06 | 1993-11-09 | Constant Velocity Transmission Lines, Inc. | A-C power line filter |
US6307364B1 (en) | 1999-08-27 | 2001-10-23 | Rf Micro Devices, Inc. | Power sensor for RF power amplifier |
US6313705B1 (en) | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier |
FR2817412A1 (fr) * | 2000-11-30 | 2002-05-31 | St Microelectronics Sa | Filtre passe-bas ou passe-bande integre |
US6919774B2 (en) | 2001-10-03 | 2005-07-19 | Microtune (Texas), L.P. | Broadband PIN diode attenuator bias network |
JP2008172075A (ja) * | 2007-01-12 | 2008-07-24 | Nec Electronics Corp | 半導体装置 |
JP5086319B2 (ja) | 2009-10-23 | 2012-11-28 | 丸井 智敬 | 微小気泡含有組成物、および、微小気泡発生器。 |
-
2011
- 2011-07-18 US US13/185,053 patent/US8653907B2/en active Active
-
2012
- 2012-05-15 TW TW101117219A patent/TWI515951B/zh active
- 2012-05-16 EP EP12168185A patent/EP2549644A1/en not_active Withdrawn
- 2012-05-17 JP JP2012113760A patent/JP5432329B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1188080A (ja) * | 1997-09-12 | 1999-03-30 | Mitsubishi Electric Corp | 高周波増幅回路とマイクロ波集積回路 |
JP2000106510A (ja) * | 1998-09-28 | 2000-04-11 | Mitsubishi Electric Corp | 高周波電力増幅器 |
JP2004516737A (ja) * | 2000-12-21 | 2004-06-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | コンパクトなカスコード無線周波数cmos電力増幅器 |
JP2011082809A (ja) * | 2009-10-07 | 2011-04-21 | Ntt Docomo Inc | バイアス回路 |
Also Published As
Publication number | Publication date |
---|---|
TWI515951B (zh) | 2016-01-01 |
EP2549644A1 (en) | 2013-01-23 |
TW201306375A (zh) | 2013-02-01 |
JP5432329B2 (ja) | 2014-03-05 |
US8653907B2 (en) | 2014-02-18 |
US20130021115A1 (en) | 2013-01-24 |
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