JP2013026614A - デバイスウェーハの加工方法 - Google Patents
デバイスウェーハの加工方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 55
- 230000001070 adhesive effect Effects 0.000 claims abstract description 54
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 124
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
- B24B19/022—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements for helicoidal grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】デバイスウェーハの外周余剰領域に対応する位置にキャリア余剰領域を有するキャリアウェーハを準備するキャリアウェーハ準備ステップと、キャリア余剰領域に凹部を形成する凹部形成ステップと、凹部形成ステップを実施した後、キャリアウェーハの表面から突出するように接着剤を凹部に配設する接着剤配設ステップと、接着剤配設ステップを実施した後、キャリアウェーハの表面側とデバイスウェーハの表面側を貼り合わせ、接着剤でデバイスウェーハをキャリアウェーハに固定するウェーハ貼り合わせステップと、ウェーハ貼り合わせステップを実施した後、デバイスウェーハの裏面側を研削、又は、研磨して所定厚みへと薄化する薄化ステップと、を備える、ことを特徴とするデバイスウェーハの加工方法とする。
【選択図】図2
Description
11a 表面
11b 裏面
15 デバイス
17 デバイス領域
19 外周余剰領域
61 キャリアウェーハ
61a 表面
63 環状溝
64 接着剤
67 デバイス収容領域
69 キャリア余剰領域
Claims (4)
- 表面に形成された複数の交差する分割予定ラインで区画された各領域にそれぞれデバイスが形成されたデバイス領域と、該デバイス領域を囲繞する外周余剰領域とを有するデバイスウェーハの加工方法であって、
該デバイスウェーハが貼着されるキャリアウェーハであって、該デバイスウェーハの該外周余剰領域に対応する位置にキャリア余剰領域を有するキャリアウェーハを準備するキャリアウェーハ準備ステップと、
該キャリアウェーハの表面の該キャリア余剰領域に凹部を形成する凹部形成ステップと、
該凹部形成ステップを実施した後、該キャリアウェーハの表面から突出するように接着剤を該凹部に配設する接着剤配設ステップと、
該接着剤配設ステップを実施した後、該キャリアウェーハの表面側と該デバイスウェーハの表面側を貼り合わせ、該接着剤で該デバイスウェーハを該キャリアウェーハに固定するウェーハ貼り合わせステップと、
該ウェーハ貼り合わせステップを実施した後、該デバイスウェーハの裏面側を研削、又は、研磨して所定厚みへと薄化する薄化ステップと、
を備える、ことを特徴とするデバイスウェーハの加工方法。 - 前記接着剤配設ステップで、前記凹部に配設される前記接着剤の量は、
前記ウェーハ貼り合わせステップを実施した際に、該接着剤が該デバイス領域に到達しない量に設定される、
ことを特徴とする請求項1に記載のデバイスウェーハの加工方法。 - 前記薄化ステップを実施した後、前記キャリアウェーハを前記デバイスウェーハから剥離する剥離ステップをさらに備える、
ことを特徴とする請求項1又は請求項2に記載のデバイスウェーハの加工方法。 - 前記薄化ステップを実施した後、前記剥離ステップを実施する前に、前記キャリアウェーハに貼着された前記デバイスウェーハに追加処理を施す追加処理ステップをさらに備える、
ことを特徴とする請求項3に記載のデバイスウェーハの加工方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/185,942 US8461019B2 (en) | 2011-07-19 | 2011-07-19 | Method of processing device wafer |
US13/185,942 | 2011-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013026614A true JP2013026614A (ja) | 2013-02-04 |
JP5939810B2 JP5939810B2 (ja) | 2016-06-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012013948A Active JP5939810B2 (ja) | 2011-07-19 | 2012-01-26 | デバイスウェーハの加工方法 |
Country Status (2)
Country | Link |
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US (1) | US8461019B2 (ja) |
JP (1) | JP5939810B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014157909A (ja) * | 2013-02-15 | 2014-08-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JP2014207270A (ja) * | 2013-04-11 | 2014-10-30 | 株式会社ディスコ | 加工方法 |
JP2015018967A (ja) * | 2013-07-11 | 2015-01-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および支持基板付きウェハ |
JP2015065373A (ja) * | 2013-09-26 | 2015-04-09 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP2015220302A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | サポートプレート、サポートプレートの形成方法及びウェーハの加工方法 |
JP2016163043A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | ウェハ分割方法 |
CN109290875A (zh) * | 2017-07-25 | 2019-02-01 | 北京通美晶体技术有限公司 | 背面有凹坑的磷化铟晶片、制法和制备其的腐蚀液 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8580655B2 (en) | 2012-03-02 | 2013-11-12 | Disco Corporation | Processing method for bump-included device wafer |
EP2951860B1 (en) * | 2013-01-31 | 2020-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Carrier substrate and method for fixing a substrate structure |
US9206037B2 (en) * | 2014-03-04 | 2015-12-08 | Disco Corporation | MEMS device chip manufacturing method |
US10278050B2 (en) * | 2015-05-26 | 2019-04-30 | Noonlight, Inc. | Systems and methods for providing assistance in an emergency |
JP6467333B2 (ja) | 2015-11-12 | 2019-02-13 | 株式会社キトー | チェーンブロックおよび組込カバー |
CN110349847B (zh) * | 2018-04-08 | 2022-11-04 | 上海新微技术研发中心有限公司 | 一种通过键合材料进行键合的方法和键合结构 |
US11195740B2 (en) | 2019-04-17 | 2021-12-07 | Micron Technology, Inc. | Methods and apparatus for wafer handling and processing |
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JP2008258303A (ja) * | 2007-04-03 | 2008-10-23 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2009503816A (ja) * | 2005-07-19 | 2009-01-29 | ラム リサーチ コーポレーション | プラズマ処理システムでの使用に適合された基板支持部の結合層を保護する方法 |
JP2011023659A (ja) * | 2009-07-17 | 2011-02-03 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
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US6949158B2 (en) * | 2001-05-14 | 2005-09-27 | Micron Technology, Inc. | Using backgrind wafer tape to enable wafer mounting of bumped wafers |
JP2004207606A (ja) | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
US7713841B2 (en) * | 2003-09-19 | 2010-05-11 | Micron Technology, Inc. | Methods for thinning semiconductor substrates that employ support structures formed on the substrates |
JP2007019379A (ja) * | 2005-07-11 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
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2011
- 2011-07-19 US US13/185,942 patent/US8461019B2/en active Active
-
2012
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JPS531464A (en) * | 1976-06-28 | 1978-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Bonding for crystal base |
JP2000271862A (ja) * | 1999-03-26 | 2000-10-03 | Ibiden Co Ltd | ウェハ研磨装置用ウェハ保持プレート及びその製造方法 |
JP2009503816A (ja) * | 2005-07-19 | 2009-01-29 | ラム リサーチ コーポレーション | プラズマ処理システムでの使用に適合された基板支持部の結合層を保護する方法 |
JP2008258303A (ja) * | 2007-04-03 | 2008-10-23 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2011023659A (ja) * | 2009-07-17 | 2011-02-03 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014157909A (ja) * | 2013-02-15 | 2014-08-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JP2014207270A (ja) * | 2013-04-11 | 2014-10-30 | 株式会社ディスコ | 加工方法 |
JP2015018967A (ja) * | 2013-07-11 | 2015-01-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および支持基板付きウェハ |
JP2015065373A (ja) * | 2013-09-26 | 2015-04-09 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP2015220302A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | サポートプレート、サポートプレートの形成方法及びウェーハの加工方法 |
JP2016163043A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | ウェハ分割方法 |
US10032669B2 (en) | 2015-02-27 | 2018-07-24 | Disco Corporation | Wafer dividing method |
CN109290875A (zh) * | 2017-07-25 | 2019-02-01 | 北京通美晶体技术有限公司 | 背面有凹坑的磷化铟晶片、制法和制备其的腐蚀液 |
US11094549B2 (en) | 2017-07-25 | 2021-08-17 | Beijing Tongmei Xtal Technology Co., Ltd. | Indium phosphide wafer having pits on the back side, method and etching solution for manufacturing the same |
Also Published As
Publication number | Publication date |
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US20130023107A1 (en) | 2013-01-24 |
JP5939810B2 (ja) | 2016-06-22 |
US8461019B2 (en) | 2013-06-11 |
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