JPS531464A - Bonding for crystal base - Google Patents

Bonding for crystal base

Info

Publication number
JPS531464A
JPS531464A JP7558776A JP7558776A JPS531464A JP S531464 A JPS531464 A JP S531464A JP 7558776 A JP7558776 A JP 7558776A JP 7558776 A JP7558776 A JP 7558776A JP S531464 A JPS531464 A JP S531464A
Authority
JP
Japan
Prior art keywords
bonding
crystal base
thru
wedges
depression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7558776A
Other languages
Japanese (ja)
Inventor
Shigeyuki Iiyama
Junji Watanabe
Masao Nishijima
Toshitada Kubota
Takashi Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7558776A priority Critical patent/JPS531464A/en
Publication of JPS531464A publication Critical patent/JPS531464A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To enable the bonding with high precision without developing wedges in the bonding layer, by placing the semiconductor base on the upper surface of the bonding plate on which grooves of grid shape are formed thru the bonding wax and by heating thru the depression of molding board on this.
COPYRIGHT: (C)1978,JPO&Japio
JP7558776A 1976-06-28 1976-06-28 Bonding for crystal base Pending JPS531464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7558776A JPS531464A (en) 1976-06-28 1976-06-28 Bonding for crystal base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7558776A JPS531464A (en) 1976-06-28 1976-06-28 Bonding for crystal base

Publications (1)

Publication Number Publication Date
JPS531464A true JPS531464A (en) 1978-01-09

Family

ID=13580472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7558776A Pending JPS531464A (en) 1976-06-28 1976-06-28 Bonding for crystal base

Country Status (1)

Country Link
JP (1) JPS531464A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140232A (en) * 1979-04-20 1980-11-01 Nippon Telegr & Teleph Corp <Ntt> Method for bonding thin piece to mounting plate
JPS61164777A (en) * 1985-01-17 1986-07-25 Toshiba Ceramics Co Ltd Adhesive for silicone wafer
JPS6327576A (en) * 1986-07-22 1988-02-05 Toshiba Ceramics Co Ltd Adhesive for use in abrasive plate
JPH0417332A (en) * 1990-05-10 1992-01-22 Shin Etsu Handotai Co Ltd Wafer-holding plate for polishing semiconductor wafer and its face-correction treatment
JP2002326157A (en) * 2001-04-27 2002-11-12 Kyocera Corp Plate for polishing wafer, and method for machining the same
US7459397B2 (en) 2004-05-06 2008-12-02 Opnext Japan, Inc. Polishing method for semiconductor substrate, and polishing jig used therein
JP2013004975A (en) * 2011-06-14 2013-01-07 Boe Technology Group Co Ltd Substrate tray and method of manufacturing flexible electronic device
JP2013026614A (en) * 2011-07-19 2013-02-04 Disco Abrasive Syst Ltd Method for processing device wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4912991A (en) * 1972-05-18 1974-02-04
JPS4958750A (en) * 1972-10-04 1974-06-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4912991A (en) * 1972-05-18 1974-02-04
JPS4958750A (en) * 1972-10-04 1974-06-07

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140232A (en) * 1979-04-20 1980-11-01 Nippon Telegr & Teleph Corp <Ntt> Method for bonding thin piece to mounting plate
JPS61164777A (en) * 1985-01-17 1986-07-25 Toshiba Ceramics Co Ltd Adhesive for silicone wafer
JPS6327576A (en) * 1986-07-22 1988-02-05 Toshiba Ceramics Co Ltd Adhesive for use in abrasive plate
JPH0417332A (en) * 1990-05-10 1992-01-22 Shin Etsu Handotai Co Ltd Wafer-holding plate for polishing semiconductor wafer and its face-correction treatment
JP2002326157A (en) * 2001-04-27 2002-11-12 Kyocera Corp Plate for polishing wafer, and method for machining the same
US7459397B2 (en) 2004-05-06 2008-12-02 Opnext Japan, Inc. Polishing method for semiconductor substrate, and polishing jig used therein
JP2013004975A (en) * 2011-06-14 2013-01-07 Boe Technology Group Co Ltd Substrate tray and method of manufacturing flexible electronic device
JP2013026614A (en) * 2011-07-19 2013-02-04 Disco Abrasive Syst Ltd Method for processing device wafer

Similar Documents

Publication Publication Date Title
JPS531464A (en) Bonding for crystal base
JPS5321903A (en) Preparation of magnetic disc substrate
JPS5363871A (en) Production of semiconductor device
JPS5275180A (en) Package for integrated circuits
JPS5228879A (en) Semiconductor device and method for its production
JPS5258363A (en) Formation of semiconductor layer
JPS526081A (en) Semiconductor wafer
JPS53139476A (en) Manufacture of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS522598A (en) Manufacturing method of card and the card
JPS51132085A (en) Manufacturing method of semiconductor device
JPS5231683A (en) Distribution base plate for semiconductor integrated circuit
JPS5295164A (en) Dividing and cleansing for semi-conductor pellet
JPS52109368A (en) Semiconductor device
JPS5384712A (en) Photographic material
JPS5299793A (en) Semiconductor laser device
JPS53147479A (en) Production of semiconductor device
JPS5267980A (en) Manufacture of semiconductor unit
JPS5348470A (en) Production of semiconductor device
JPS51140559A (en) Impurities diffusing to iii-v group compound semi-conductor base plate
JPS5272189A (en) Production of semiconductor device
JPS5376661A (en) Semiconductor device
JPS5313369A (en) Manufacture of semiconductor
JPS5219074A (en) Assembling method of semiconductor element
JPS5277584A (en) Growing crystal