JP2015018967A - 半導体装置の製造方法および支持基板付きウェハ - Google Patents
半導体装置の製造方法および支持基板付きウェハ Download PDFInfo
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- JP2015018967A JP2015018967A JP2013145737A JP2013145737A JP2015018967A JP 2015018967 A JP2015018967 A JP 2015018967A JP 2013145737 A JP2013145737 A JP 2013145737A JP 2013145737 A JP2013145737 A JP 2013145737A JP 2015018967 A JP2015018967 A JP 2015018967A
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- 239000000758 substrate Substances 0.000 title claims abstract description 241
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000853 adhesive Substances 0.000 claims abstract description 130
- 230000001070 adhesive effect Effects 0.000 claims abstract description 124
- 238000000227 grinding Methods 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims description 84
- 230000002093 peripheral effect Effects 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 43
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 266
- 238000005516 engineering process Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 125000000524 functional group Chemical group 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
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- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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Abstract
【解決手段】デバイスウェハ10の第1の面11の周縁部に、デバイスウェハ10の外縁に沿った凹部13を形成する。支持基板40の接着面41に、支持基板40の外縁に沿った凹部42を形成する。デバイスウェハ10の第1の面11と支持基板40の接着面41とを接着剤30を介して接着する。凹部13の底面に達する深さ位置までデバイスウェハ10を第1の面11とは反対側の第2の面12側から研削する。
【選択図】図1
Description
図1(A)〜図1(F)は、開示の技術の一実施形態に係る半導体装置の製造方法を示す断面図である。
デバイスウェハ10の第1の面11にトランジスタ等を含む半導体素子、半導体素子に電気的に接続された配線層および配線層に電気的に接続された貫通電極(以下TSVと称する)20等の機能要素を形成する。図1(A)には、一例として、デバイスウェハ10に形成されたTSV20が示されている。デバイスウェハ10は、例えば厚さ775μmのシリコンウェハであり略円形の形状を有している。なお、デバイスウェハ10は、開示の技術におけるデバイスウェハの一例である。
次に、図1(B)に示すように、デバイスウェハ10の第1の面11側の周縁部に、デバイスウェハ10の外縁に沿って円環状に伸長し且つ第2の面12側に向けて凹んだ凹部13を形成する。なお、凹部13は、開示の技術における第1の凹部の一例である。ここで、図2(A)および図2(B)は、それぞれ、デバイスウェハ10に凹部13を形成する処理の一例を示す斜視図および断面図である。図2(A)および図2(B)に示すように、デバイスウェハ10は、第1の面11が上方を向くように回転ステージ100上に載置される。回転ステージ100によってデバイスウェハ10を回転させつつ高速回転するトリミングブレード110をデバイスウェハ10の第1の面11の周縁部に当接させることにより、デバイスウェハ10の外縁に沿って伸長する凹部13が形成される。凹部13は、一例として図2(B)等に示すように、断面がL字型を呈するように、デバイスウェハ10の端面10Eを含んでデバイスウェハ10の周縁部を部分的に除去することにより形成される。すなわち、凹部13は、デバイスウェハ10の端面10Eに接続され且つ端面10Eに対して略垂直な底面13aと、底面13aに接続され且つ底面13aに対して略垂直な側面13bとを含む。凹部13は、デバイスウェハ10の外縁に沿った円環状をなすように形成される。なお、凹部13の断面形状はL字型に限らず、底面13aおよび側面13bが連続した曲面を形成するような断面形状であってもよい。
次に、図1(C)に示すように、デバイスウェハ10の第1の面11に接着剤30を介して支持基板40を接着する。
次に、図1(D)に示すように、支持基板40によって支持されたデバイスウェハ10を第2の面12側から研削することにより薄化する。図9は、デバイスウェハ10を研削する処理の一例を示す断面図である。デバイスウェハ10は、例えばグラインディングホイール120を第2の面12に当接させて機械的な研削を行うバックグラインディング処理を行う。この研削は、デバイスウェハ10は、凹部13の底面13a(図8(B)参照)に達するよう行う。研削面が凹部13の底面13aにまで達し、接着剤30が研削面に露出すると、接着剤30がデバイスウェハ10とともに研削されることとなる。支持基板40に凹部が形成されない場合に比べると、ウェハデバイス10に形成される凹部13内の接着剤30の量を少なくすることができるため、研削時よって接着剤30が繊維状となること、または繊維状の接着剤30の大きさを抑制することができる。凹部42の底面42aおよび側面42bを覆う密着層44が形成されている場合には、接着剤30が研削時の摩擦力によって支持基板40から脱離してしまうことが防止される。
次に、図1(E)に示すように、デバイスウェハ10の第2の面12側における種々の加工を行う。例えば、本工程は、デバイスウェハ10を第2の面12側からエッチングによって後退させ、最終的なデバイスの厚さに仕上げるとともに、第2の面12においてTSV20の端部を露出させるシリコンリセスプロセスを含み得る。更に、本工程は、デバイスウェハ10の第2の面12にパッシベーション膜16を形成するプロセス、TSV20の露出部分のバリアメタル(図示せず)を除去するプロセス、TSV20に電気的に接続された配線層を形成するプロセス等を含み得る。
次に、図1(F)に示すように、裏面加工が完了したデバイスウェハ10から支持基板40を剥離する。図10(A)〜図10(C)は、支持基板40をデバイスウェハ10から剥離する処理の一例を示す断面図である。
図12(A)および図12(B)は、それぞれ、本開示の技術の第2の実施形態に係る支持基板付きウェハ60Aおよび60Bの構成を示す断面図である。第2の実施形態に係る支持基板付きウェハ60Aおよび60Bは、支持基板40側に形成される凹部42の構成が第1の実施形態とは異なる。すなわち、第2の実施形態に係る支持基板40に形成される凹部42は、支持基板40の周縁部に支持基板40の外縁に沿って同心円状に伸長する複数の溝45を含んでいる。
図13は、本開示の技術の第3の実施形態に係る支持基板付きウェハ60Cの構成を示す断面図である。第1の実施形態に係る支持基板付きウェハ60(図8(B)参照)において、デバイスウェハ10および支持基板40にそれぞれ形成された凹部13および42はデバイスウェハ10又は支持基板40の端面を含む領域を部分的に除去して形成されるものであった。すなわち、第1の実施形態に係る凹部13および42の断面形状は、L字型を呈するものであった。これに対して、第3の実施形態に係る支持基板付きウェハ60Cにおいて、デバイスウェハ10側の凹部13は、デバイスウェハ10の端面10Eよりも内側の領域を部分的に除去して形状される。すなわち、第3の実施形態に係るデバイスウェハ10側の凹部13の断面形状はU字型を呈する。同様に、第3の実施形態に係る支持基板付きウェハ60Cにおいて、支持基板40側の凹部42は、支持基板40の端面40Eよりも内側の領域を部分的に除去して形成される。すなわち、第3の実施形態に係る支持基板40側の凹部42の断面形状はU字型を呈する。
図14(A)は、上記した本開示の技術の各実施形態の比較対象となる比較例に係る支持基板付きウェハ60Xの断面図である。比較例に係る支持基板付きウェハ60Xにおいて、デバイスウェハ10の周縁部に凹部13が形成され、支持基板40の内周部において低密着層43が形成される。これらの点は、上記した本開示の技術の各実施形態に係る支持基板付きウェハと同様である。一方、比較例に係る支持基板付きウェハ60Xにおいて、支持基板40側には、図8(B)等に示す本開示の技術の実施形態に係る凹部42や密着層44が形成されていない。比較例に係る支持基板付きウェハ60Xにおいて、デバイスウェハ10と支持基板40との間に介在する接着剤30は、デバイスウェハ10側の凹部13によって形成される空間内に充填される。
デバイスウェハの第1の面の周縁部に、前記デバイスウェハの外縁に沿った第1の凹部を形成する工程と、支持基板の接着面に、前記支持基板の外縁に沿った第2の凹部を形成する工程と、前記デバイスウェハの前記第1の面と前記支持基板の前記接着面とを接着剤を介して接着する工程と、前記第1の凹部の底面に達する深さ位置まで前記デバイスウェハを前記第1の面とは反対側の第2の面側から研削する工程と、を含む半導体装置の製造方法。
前記接着剤に対する密着性を向上させる第1の密着層を前記第2の凹部の表面に形成する工程を更に含む付記1に記載の製造方法。
前記接着剤に対する密着性を向上させる第2の密着層を前記第1の凹部の表面に形成する工程を更に含む付記2に記載の製造方法。
前記第1の密着層および前記第2の密着層は、シランカップリング剤を含む付記2または付記3に記載の製造方法。
前記支持基板の前記接着面の前記第2の凹部よりも内側に前記接着剤に対する密着性を低減させた低密着層を形成する工程を更に含む付記1乃至付記4のいずれか1つに記載の製造方法。
前記第1の凹部は、前記デバイスウェハの外縁を形成する端面を含む領域を部分的に除去して形成され、前記第2の凹部は、前記支持基板の外縁を形成する端面を含む領域を部分的に除去して形成される付記1乃至付記5のいずれか1つに記載の製造方法。
前記第2の凹部は、前記支持基板の外縁に沿って設けられた複数の溝を含む付記1乃至付記5のいずれか1つに記載の製造方法。
前記第1の凹部は、前記デバイスウェハの外縁を形成する端面よりも内側の領域を部分的に除去して形成され、前記第2の凹部は、前記支持基板の外縁を形成する端面よりも内側の領域を部分的に除去して形成される付記1乃至付記5のいずれか1つに記載の製造方法。
前記デバイスウェハを研削した後に前記デバイスウェハから前記支持基板を剥離する工程を更に含む付記1乃至付記8のいずれか1つに記載の製造方法。
前記第1の凹部は、前記第1の面側において、前記デバイスウェハのべベル部を除去するように形成される付記1乃至付記9のいずれか1つに記載の製造方法。
第1の面の周縁部に前記第1の面の外縁に沿った第1の凹部を有するデバイスウェハと、前記デバイスウェハとの接着面に前記接着面の外縁に沿った第2の凹部を有する支持基板と、前記デバイスウェハと前記支持基板との間に介在し且つ前記第1の凹部および前記第2の凹部に収容された接着剤と、を含む支持基板付きウェハ。
前記第2の凹部の表面に形成された、前記接着剤に対する密着性を向上させる第1の密着層を更に含む付記11に記載の支持基板付きウェハ。
前記第1の凹部の表面に前記接着剤に対する密着性を向上させる第2の密着層が形成された付記12に記載の支持基板付きウェハ。
前記第1の密着層および前記第2の密着層は、シランカップリング剤を含む付記12または13に記載の支持基板付きウェハ。
前記支持基板は、前記接着面の前記第2の凹部よりも内側に前記接着剤に対する密着性を低減させた低密着層を含む付記11乃至付記14のいずれか1つに記載の支持基板付きウェハ。
前記第1の凹部は、前記デバイスウェハの外縁を形成する端面を含む領域を部分的に除去して形成され、前記第2の凹部は、前記支持基板の外縁を形成する端面を含む領域を部分的に除去して形成される付記11乃至付記15のいずれか1つに記載の支持基板付きウェハ。
前記第2の凹部は、前記支持基板の外縁に沿って設けられた複数の溝を含む付記11乃至付記15のいずれか1つに記載の支持基板付きウェハ。
前記第1の凹部は、前記デバイスウェハの外縁を形成する端面よりも内側の領域を部分的に除去して形成され、前記第2の凹部は、前記支持基板の外縁を形成する端面よりも内側の領域を部分的に除去して形成される付記11乃至付記15のいずれか1つに記載の支持基板付きウェハ。
前記第1の凹部は、前記第1の面11側において、前記デバイスウェハのべベル部を除去するように形成される付記1乃至付記18のいずれか1つに支持基板付きウェハ。
11 第1の面
12 第2の面
13、42 凹部
14、44 密着層
30 接着剤
40 支持基板
41 接着面
43 低密着層
60、60A、60B、60C、60X 支持基板付きウェハ
Claims (11)
- デバイスウェハの第1の面の周縁部に、前記デバイスウェハの外縁に沿った第1の凹部を形成する工程と、
支持基板の接着面に、前記支持基板の外縁に沿った第2の凹部を形成する工程と、
前記デバイスウェハの前記第1の面と前記支持基板の前記接着面とを接着剤を介して接着する工程と、
前記第1の凹部の底面に達する深さ位置まで前記デバイスウェハを前記第1の面とは反対側の第2の面側から研削する工程と、
を含む半導体装置の製造方法。 - 前記接着剤に対する密着性を向上させる第1の密着層を前記第2の凹部の表面に形成する工程を更に含む請求項1に記載の製造方法。
- 前記接着剤に対する密着性を向上させる第2の密着層を前記第1の凹部の表面に形成する工程を更に含む請求項2に記載の製造方法。
- 前記第1の密着層および前記第2の密着層は、シランカップリング剤を含む請求項2または3に記載の製造方法。
- 前記支持基板の前記接着面の前記第2の凹部よりも内側に前記接着剤に対する密着性を低減させた低密着層を形成する工程を更に含む請求項1乃至4のいずれか1項に記載の製造方法。
- 前記第1の凹部は、前記デバイスウェハの外縁を形成する端面を含む領域を部分的に除去して形成され、
前記第2の凹部は、前記支持基板の外縁を形成する端面を含む領域を部分的に除去して形成される請求項1乃至5のいずれか1項に記載の製造方法。 - 前記第2の凹部は、前記支持基板の外縁に沿って設けられた複数の溝を含む請求項1乃至5のいずれか1項に記載の製造方法。
- 前記第1の凹部は、前記デバイスウェハの外縁を形成する端面よりも内側の領域を部分的に除去して形成され、
前記第2の凹部は、前記支持基板の外縁を形成する端面よりも内側の領域を部分的に除去して形成される請求項1乃至5のいずれか1項に記載の製造方法。 - 第1の面の周縁部に前記第1の面の外縁に沿った第1の凹部を有するデバイスウェハと、
前記デバイスウェハとの接着面に前記接着面の外縁に沿った第2の凹部を有する支持基板と、
前記デバイスウェハと前記支持基板との間に介在し且つ前記第1の凹部および前記第2の凹部に収容された接着剤と、
を含む支持基板付きウェハ。 - 前記第2の凹部の表面に形成された、前記接着剤に対する密着性を向上させる第1の密着層を更に含む請求項9に記載の支持基板付きウェハ。
- 前記第1の凹部の表面に前記接着剤に対する密着性を向上させる第2の密着層が形成された請求項10に記載の支持基板付きウェハ。
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