JP2012529063A - レーザを用いた表示方法およびシステム - Google Patents
レーザを用いた表示方法およびシステム Download PDFInfo
- Publication number
- JP2012529063A JP2012529063A JP2012513336A JP2012513336A JP2012529063A JP 2012529063 A JP2012529063 A JP 2012529063A JP 2012513336 A JP2012513336 A JP 2012513336A JP 2012513336 A JP2012513336 A JP 2012513336A JP 2012529063 A JP2012529063 A JP 2012529063A
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- laser
- blue
- green
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title description 29
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000012545 processing Methods 0.000 claims abstract description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 56
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 230000003595 spectral effect Effects 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 13
- 238000005286 illumination Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 description 50
- 238000010586 diagram Methods 0.000 description 39
- 238000012986 modification Methods 0.000 description 26
- 230000004048 modification Effects 0.000 description 26
- 230000010287 polarization Effects 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 238000006467 substitution reaction Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
- H04N9/3161—Modulator illumination systems using laser light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Projection Apparatus (AREA)
- Semiconductor Lasers (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Video Image Reproduction Devices For Color Tv Systems (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18210509P | 2009-05-29 | 2009-05-29 | |
| US61/182,105 | 2009-05-29 | ||
| US12/789,303 US8427590B2 (en) | 2009-05-29 | 2010-05-27 | Laser based display method and system |
| US12/789,303 | 2010-05-27 | ||
| PCT/US2010/036739 WO2010138923A1 (en) | 2009-05-29 | 2010-05-28 | Laser based display method and system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015077274A Division JP2015179273A (ja) | 2009-05-29 | 2015-04-04 | レーザを用いた表示方法およびシステム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012529063A true JP2012529063A (ja) | 2012-11-15 |
| JP2012529063A5 JP2012529063A5 (enExample) | 2013-08-15 |
Family
ID=43223126
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012513336A Pending JP2012529063A (ja) | 2009-05-29 | 2010-05-28 | レーザを用いた表示方法およびシステム |
| JP2015077274A Pending JP2015179273A (ja) | 2009-05-29 | 2015-04-04 | レーザを用いた表示方法およびシステム |
| JP2017199922A Active JP6691899B2 (ja) | 2009-05-29 | 2017-10-13 | レーザを用いた表示方法およびシステム |
| JP2020000178A Active JP7242574B2 (ja) | 2009-05-29 | 2020-01-06 | レーザを用いた表示方法およびシステム |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015077274A Pending JP2015179273A (ja) | 2009-05-29 | 2015-04-04 | レーザを用いた表示方法およびシステム |
| JP2017199922A Active JP6691899B2 (ja) | 2009-05-29 | 2017-10-13 | レーザを用いた表示方法およびシステム |
| JP2020000178A Active JP7242574B2 (ja) | 2009-05-29 | 2020-01-06 | レーザを用いた表示方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| JP (4) | JP2012529063A (enExample) |
| CN (2) | CN105824179B (enExample) |
| DE (1) | DE112010002177B4 (enExample) |
| WO (1) | WO2010138923A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
| US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
| US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
| US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
| US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
| US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
| US9557013B2 (en) | 2012-08-01 | 2017-01-31 | Nec Display Solutions, Ltd. | Illumination optical system and projection display apparatus |
| US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
| JP2014126753A (ja) * | 2012-12-27 | 2014-07-07 | Seiko Epson Corp | ヘッドマウントディスプレイ |
| US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
| US9826203B2 (en) * | 2014-09-08 | 2017-11-21 | Intel Corporation | Method and system for controlling a laser-based lighting system |
| US10070016B2 (en) | 2016-02-16 | 2018-09-04 | Microvision, Inc. | Multi-stripes lasers for laser based projector displays |
| CN107561725A (zh) * | 2016-12-07 | 2018-01-09 | 北京数科技有限公司 | 合光装置及用于激光立体投影的光机结构 |
| KR101901701B1 (ko) | 2016-12-28 | 2018-09-27 | 삼성전기 주식회사 | 촬상 광학계 |
| CN109116666B (zh) * | 2017-06-23 | 2021-06-11 | 中强光电股份有限公司 | 投影机与照明系统 |
| JP7075299B2 (ja) * | 2018-07-12 | 2022-05-25 | 株式会社小糸製作所 | 車両用灯具 |
| DE112019001810T5 (de) | 2018-04-06 | 2020-12-31 | Koito Manufacturing Co., Ltd. | Fahrzeugleuchte, Raum-Lichtmodulationseinheit und Leuchteneinheit |
| CN108737805B (zh) * | 2018-07-09 | 2020-03-27 | 北京一数科技有限公司 | 一种光机投影方法、装置及智能手表 |
| KR102617540B1 (ko) * | 2018-09-14 | 2023-12-26 | 에스엘 주식회사 | 조명 장치 |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| US11209687B2 (en) | 2018-12-28 | 2021-12-28 | Santec Corporation | Spatial phase modulator |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| DE102019106674A1 (de) * | 2019-03-15 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Vorrichtung und Verfahren zur Projektion einer Mehrzahl von Strhalungspunkten auf eine Oberfläche |
| CN110335927B (zh) * | 2019-07-11 | 2020-10-30 | 马鞍山杰生半导体有限公司 | 紫外led及其制备方法 |
| CN110880522B (zh) * | 2019-10-14 | 2022-03-29 | 厦门大学 | 基于极性面和非极性面生长的微型led集成全色显示芯片及其制备方法 |
| CN113534445B (zh) * | 2021-05-21 | 2023-04-14 | 北京控制工程研究所 | 一种双光路激光扫描组件 |
| CN113485063A (zh) * | 2021-06-29 | 2021-10-08 | 歌尔股份有限公司 | 一种光机光路系统及其控制方法 |
| CN113946092A (zh) * | 2021-08-02 | 2022-01-18 | 合肥全色光显科技有限公司 | 一种投影系统 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| JP7242574B2 (ja) | 2023-03-20 |
| JP2015179273A (ja) | 2015-10-08 |
| WO2010138923A1 (en) | 2010-12-02 |
| JP2018085500A (ja) | 2018-05-31 |
| JP2020098911A (ja) | 2020-06-25 |
| DE112010002177B4 (de) | 2023-12-28 |
| CN102449550B (zh) | 2016-06-08 |
| CN102449550A (zh) | 2012-05-09 |
| CN105824179A (zh) | 2016-08-03 |
| CN105824179B (zh) | 2018-01-30 |
| DE112010002177T5 (de) | 2012-10-04 |
| JP6691899B2 (ja) | 2020-05-13 |
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