JP2012526914A - ウェハを処理する方法及びデバイス - Google Patents

ウェハを処理する方法及びデバイス Download PDF

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Publication number
JP2012526914A
JP2012526914A JP2012510292A JP2012510292A JP2012526914A JP 2012526914 A JP2012526914 A JP 2012526914A JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012526914 A JP2012526914 A JP 2012526914A
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Japan
Prior art keywords
wafer
coating solution
coating
region
overcurrent
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Pending
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JP2012510292A
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English (en)
Japanese (ja)
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JP2012526914A5 (https=
Inventor
アンドレアス マウラー ベルナー
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ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング
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Publication of JP2012526914A publication Critical patent/JP2012526914A/ja
Publication of JP2012526914A5 publication Critical patent/JP2012526914A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Non-Insulated Conductors (AREA)
  • Coating Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
JP2012510292A 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス Pending JP2012526914A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009022337.1 2009-05-13
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Publications (2)

Publication Number Publication Date
JP2012526914A true JP2012526914A (ja) 2012-11-01
JP2012526914A5 JP2012526914A5 (https=) 2013-06-27

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012510292A Pending JP2012526914A (ja) 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス

Country Status (13)

Country Link
US (1) US20120052611A1 (https=)
EP (1) EP2430664A2 (https=)
JP (1) JP2012526914A (https=)
KR (1) KR20120018155A (https=)
CN (1) CN102439730B (https=)
AU (1) AU2010247404A1 (https=)
CA (1) CA2761459A1 (https=)
DE (1) DE102009022337A1 (https=)
IL (1) IL216309A0 (https=)
MX (1) MX2011011985A (https=)
SG (1) SG175365A1 (https=)
TW (1) TW201108449A (https=)
WO (1) WO2010130786A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09503345A (ja) * 1993-09-30 1997-03-31 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶シリコンからなる太陽電池の金属化方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017079A1 (de) * 1980-05-03 1981-11-05 Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg Vorrichtung zum elektroplattieren
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
DE59207945D1 (de) 1991-11-11 1997-03-06 Siemens Solar Gmbh Verfahren zum Erzeugen feiner Elektrodenstruckturen
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
TW424807U (en) * 1998-05-06 2001-03-01 Ke Jian Shin Improved structure for rotatory conductive wheel
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
JPH09503345A (ja) * 1993-09-30 1997-03-31 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶シリコンからなる太陽電池の金属化方法
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法

Also Published As

Publication number Publication date
WO2010130786A2 (de) 2010-11-18
MX2011011985A (es) 2012-02-28
WO2010130786A3 (de) 2011-07-14
SG175365A1 (en) 2011-11-28
EP2430664A2 (de) 2012-03-21
KR20120018155A (ko) 2012-02-29
TW201108449A (en) 2011-03-01
US20120052611A1 (en) 2012-03-01
IL216309A0 (en) 2012-01-31
AU2010247404A1 (en) 2011-11-17
CN102439730B (zh) 2015-07-15
CA2761459A1 (en) 2010-11-18
CN102439730A (zh) 2012-05-02
DE102009022337A1 (de) 2010-11-18

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