JP2012525690A - 発光ダイオードおよび発光ダイオードを製造する方法 - Google Patents

発光ダイオードおよび発光ダイオードを製造する方法 Download PDF

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Publication number
JP2012525690A
JP2012525690A JP2012507659A JP2012507659A JP2012525690A JP 2012525690 A JP2012525690 A JP 2012525690A JP 2012507659 A JP2012507659 A JP 2012507659A JP 2012507659 A JP2012507659 A JP 2012507659A JP 2012525690 A JP2012525690 A JP 2012525690A
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semiconductor body
emitting diode
carrier
light emitting
layer
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JP2012525690A5 (enExample
Inventor
グロリエ ヴァンサン
アールシュテット マグヌス
アールシュテット ミカエル
アイスラー ディーター
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
JP2012507659A 2009-04-28 2010-03-25 発光ダイオードおよび発光ダイオードを製造する方法 Pending JP2012525690A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009019161.5 2009-04-28
DE102009019161A DE102009019161A1 (de) 2009-04-28 2009-04-28 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2010/053942 WO2010124915A1 (de) 2009-04-28 2010-03-25 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (2)

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JP2012525690A true JP2012525690A (ja) 2012-10-22
JP2012525690A5 JP2012525690A5 (enExample) 2013-05-02

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JP2012507659A Pending JP2012525690A (ja) 2009-04-28 2010-03-25 発光ダイオードおよび発光ダイオードを製造する方法

Country Status (7)

Country Link
US (1) US8796714B2 (enExample)
EP (1) EP2425464A1 (enExample)
JP (1) JP2012525690A (enExample)
KR (1) KR20120011056A (enExample)
CN (1) CN102414849A (enExample)
DE (1) DE102009019161A1 (enExample)
WO (1) WO2010124915A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018503982A (ja) * 2015-01-30 2018-02-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体部品を製造するための方法および半導体部品
KR102186574B1 (ko) * 2019-05-29 2020-12-04 한국산업기술대학교산학협력단 발광 다이오드

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US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
KR101194844B1 (ko) 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
JP5777879B2 (ja) * 2010-12-27 2015-09-09 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
DE102011077898A1 (de) * 2011-06-21 2012-12-27 Osram Ag LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung
DE102011114641B4 (de) 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102450966B1 (ko) 2014-10-27 2022-10-06 루미리즈 홀딩 비.브이. 지향성 발광 배열 및 이를 제조하는 방법
US10770440B2 (en) * 2017-03-15 2020-09-08 Globalfoundries Inc. Micro-LED display assembly
DE102017115794A1 (de) * 2017-07-13 2019-01-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017119344A1 (de) 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
KR102375592B1 (ko) * 2020-09-03 2022-03-21 한국공학대학교산학협력단 저저항 발광 다이오드

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JP2004297095A (ja) * 2001-11-19 2004-10-21 Sanyo Electric Co Ltd 化合物半導体発光素子の製造方法
JP2006253172A (ja) * 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP2006332714A (ja) * 2001-07-24 2006-12-07 Nichia Chem Ind Ltd 半導体発光素子
JP2006352085A (ja) * 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
JP2007294956A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co 改良された光抽出効率を有する発光装置およびその製造方法
WO2008096214A2 (en) * 2006-11-20 2008-08-14 Koninklijke Philips Electronics, N.V. Light emitting device including luminescent ceramic and light-scattering material
WO2008131736A1 (de) * 2007-04-26 2008-11-06 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente

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CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
JP2002170989A (ja) * 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
US7276742B2 (en) 2001-11-19 2007-10-02 Sanyo Electric Co., Ltd. Compound semiconductor light emitting device and its manufacturing method
US6730940B1 (en) * 2002-10-29 2004-05-04 Lumileds Lighting U.S., Llc Enhanced brightness light emitting device spot emitter
US8835937B2 (en) * 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色ｌｅｄ及びその製造方法
US8071997B2 (en) * 2005-10-07 2011-12-06 Osram Sylvania Inc. LED with light transmissive heat sink
US7514721B2 (en) * 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
DE112007000290B4 (de) * 2006-01-31 2017-06-14 Kyocera Corp. Lichtemittierende Vorrichtung und lichtemittierendes Modul
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure
DE102008062932A1 (de) 2008-12-23 2010-06-24 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

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JP2006332714A (ja) * 2001-07-24 2006-12-07 Nichia Chem Ind Ltd 半導体発光素子
JP2004297095A (ja) * 2001-11-19 2004-10-21 Sanyo Electric Co Ltd 化合物半導体発光素子の製造方法
JP2006253172A (ja) * 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP2006352085A (ja) * 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
JP2007294956A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co 改良された光抽出効率を有する発光装置およびその製造方法
WO2008096214A2 (en) * 2006-11-20 2008-08-14 Koninklijke Philips Electronics, N.V. Light emitting device including luminescent ceramic and light-scattering material
WO2008131736A1 (de) * 2007-04-26 2008-11-06 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018503982A (ja) * 2015-01-30 2018-02-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体部品を製造するための方法および半導体部品
US10475773B2 (en) 2015-01-30 2019-11-12 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and a semiconductor component
KR102186574B1 (ko) * 2019-05-29 2020-12-04 한국산업기술대학교산학협력단 발광 다이오드
US11024772B2 (en) 2019-05-29 2021-06-01 Korea Polytechnic University Industry Academic Cooperation Foundation Light emitting diode

Also Published As

Publication number Publication date
CN102414849A (zh) 2012-04-11
WO2010124915A1 (de) 2010-11-04
KR20120011056A (ko) 2012-02-06
US20120112226A1 (en) 2012-05-10
EP2425464A1 (de) 2012-03-07
US8796714B2 (en) 2014-08-05
DE102009019161A1 (de) 2010-11-04

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