KR20120011056A - 발광다이오드 및 발광다이오드의 제조 방법 - Google Patents

발광다이오드 및 발광다이오드의 제조 방법 Download PDF

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Publication number
KR20120011056A
KR20120011056A KR1020117028251A KR20117028251A KR20120011056A KR 20120011056 A KR20120011056 A KR 20120011056A KR 1020117028251 A KR1020117028251 A KR 1020117028251A KR 20117028251 A KR20117028251 A KR 20117028251A KR 20120011056 A KR20120011056 A KR 20120011056A
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South Korea
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semiconductor body
light emitting
carrier body
emitting diode
carrier
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Korean (ko)
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빈센트 그롤리어
매그너스 알스테드트
미카엘 알스테드트
디에터 에이슬러
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20120011056A publication Critical patent/KR20120011056A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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KR1020117028251A 2009-04-28 2010-03-25 발광다이오드 및 발광다이오드의 제조 방법 Withdrawn KR20120011056A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009019161.5 2009-04-28
DE102009019161A DE102009019161A1 (de) 2009-04-28 2009-04-28 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2010/053942 WO2010124915A1 (de) 2009-04-28 2010-03-25 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (1)

Publication Number Publication Date
KR20120011056A true KR20120011056A (ko) 2012-02-06

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KR1020117028251A Withdrawn KR20120011056A (ko) 2009-04-28 2010-03-25 발광다이오드 및 발광다이오드의 제조 방법

Country Status (7)

Country Link
US (1) US8796714B2 (enExample)
EP (1) EP2425464A1 (enExample)
JP (1) JP2012525690A (enExample)
KR (1) KR20120011056A (enExample)
CN (1) CN102414849A (enExample)
DE (1) DE102009019161A1 (enExample)
WO (1) WO2010124915A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180118248A (ko) * 2011-08-09 2018-10-30 에피스타 코포레이션 광전자 소자 및 그 제조방법
WO2022050655A1 (ko) * 2020-09-03 2022-03-10 한국산업기술대학교 산학협력단 저저항 발광 다이오드

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JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
KR101194844B1 (ko) 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
JP5777879B2 (ja) * 2010-12-27 2015-09-09 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
DE102011077898A1 (de) * 2011-06-21 2012-12-27 Osram Ag LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung
DE102011114641B4 (de) 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102450966B1 (ko) 2014-10-27 2022-10-06 루미리즈 홀딩 비.브이. 지향성 발광 배열 및 이를 제조하는 방법
CN107210335B (zh) 2015-01-30 2019-07-05 欧司朗光电半导体有限公司 用于制造半导体组件的方法及半导体组件
US10770440B2 (en) * 2017-03-15 2020-09-08 Globalfoundries Inc. Micro-LED display assembly
DE102017115794A1 (de) * 2017-07-13 2019-01-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017119344A1 (de) 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
KR102186574B1 (ko) * 2019-05-29 2020-12-04 한국산업기술대학교산학협력단 발광 다이오드

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DE29724582U1 (de) 1996-06-26 2002-07-04 OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
JP2002170989A (ja) * 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
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JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
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JP2006253172A (ja) 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
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DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180118248A (ko) * 2011-08-09 2018-10-30 에피스타 코포레이션 광전자 소자 및 그 제조방법
WO2022050655A1 (ko) * 2020-09-03 2022-03-10 한국산업기술대학교 산학협력단 저저항 발광 다이오드

Also Published As

Publication number Publication date
CN102414849A (zh) 2012-04-11
WO2010124915A1 (de) 2010-11-04
JP2012525690A (ja) 2012-10-22
US20120112226A1 (en) 2012-05-10
EP2425464A1 (de) 2012-03-07
US8796714B2 (en) 2014-08-05
DE102009019161A1 (de) 2010-11-04

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Patent event date: 20111125

Patent event code: PA01051R01D

Comment text: International Patent Application

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid