JP2012523704A - 酸化ストロンチウムルテニウム界面 - Google Patents
酸化ストロンチウムルテニウム界面 Download PDFInfo
- Publication number
- JP2012523704A JP2012523704A JP2012504813A JP2012504813A JP2012523704A JP 2012523704 A JP2012523704 A JP 2012523704A JP 2012504813 A JP2012504813 A JP 2012504813A JP 2012504813 A JP2012504813 A JP 2012504813A JP 2012523704 A JP2012523704 A JP 2012523704A
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- JP
- Japan
- Prior art keywords
- strontium
- ruthenium
- precursor
- oxide material
- atomic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims abstract description 188
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 100
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 56
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 53
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 108
- 239000002243 precursor Substances 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 84
- 230000008569 process Effects 0.000 claims description 54
- 229910052712 strontium Inorganic materials 0.000 claims description 40
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 40
- 239000003990 capacitor Substances 0.000 claims description 32
- ANIPLPVHLCEBLF-UHFFFAOYSA-N strontium oxygen(2-) ruthenium(3+) Chemical compound [Ru+3].[O-2].[Sr+2] ANIPLPVHLCEBLF-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 238000004151 rapid thermal annealing Methods 0.000 claims description 5
- XRFHCHCLSRSSPQ-UHFFFAOYSA-N strontium;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Sr+2] XRFHCHCLSRSSPQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000109 continuous material Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 16
- 239000004020 conductor Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 35
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000010926 purge Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 14
- 239000007800 oxidant agent Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010406 interfacial reaction Methods 0.000 description 5
- 238000012994 industrial processing Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000012625 in-situ measurement Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- NEVTWOOXSWYODA-UHFFFAOYSA-N [Ru+]=O.[O-2].[Sr+2] Chemical compound [Ru+]=O.[O-2].[Sr+2] NEVTWOOXSWYODA-UHFFFAOYSA-N 0.000 description 1
- QAKZFDCCFWBSGH-UHFFFAOYSA-N [Ru].[Sr] Chemical compound [Ru].[Sr] QAKZFDCCFWBSGH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/404—Oxides of alkaline earth metals
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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Abstract
【選択図】図1A
Description
特定の実施形態を本明細書に例証および説明してきたが、当業者には、同じ目的が達成されると予測されるあらゆる配設が、示されている特定の実施形態と置き換えられてもよいことを理解されることになる。本開示の多数の適合物が、当業者には明らかになることになる。従って、本出願は、本開示のあらゆる適合物または変形物を含めることを目的としている。
Claims (20)
- 酸化ストロンチウムルテニウムを形成する方法であって、
第1の原子層堆積プロセスを使用して、第1の酸化ストロンチウム材料をルテニウム材料上に形成することであって、前記第1の原子層堆積は、水を酸素源として伴うストロンチウム前駆体を使用することと、
第2の原子層堆積プロセスを使用して、第2の酸化ストロンチウム材料を前記第1の酸化ストロンチウム材料上に形成することであって、前記第2の原子層堆積プロセスは、オゾンを酸素源として伴うストロンチウム前駆体を使用することと、
前記酸化ストロンチウムルテニウムを形成するように、前記ルテニウム材料、前記第1の酸化ストロンチウム材料、および前記第2のストロンチウム材料を焼鈍することと、
を含む、方法。 - 前記第1の酸化ストロンチウム材料を形成すること、および前記第2の酸化ストロンチウム材料を形成することは、前記第1の原子層堆積プロセスおよび前記第2の原子層堆積プロセスに同じストロンチウム前駆体を使用することを含む、請求項1に記載の方法。
- ストロンチウム前駆体を使用することは、前記第1の原子層堆積プロセスおよび前記第2の原子層堆積プロセスのうちの少なくとも1つに、ストロンチウム(テトラメチルヘプタンジオネート)を使用することを含む、請求項1または2に記載の方法。
- 前記第1の酸化ストロンチウム材料を連続材料として形成するように、少なくとも複数サイクルの前記第1の原子層堆積プロセスを実施すること、
をさらに含む、請求項1〜3のいずれかに記載の方法。 - 前記第1の酸化ストロンチウム材料を少なくとも20Åの厚さに形成するように、少なくとも複数サイクルの前記第1の原子層堆積プロセスを実施すること、
をさらに含む、請求項1〜4のいずれかに記載の方法。 - 前記第2の酸化ストロンチウム材料を連続材料として形成するように、少なくとも複数サイクルの前記第2の原子層堆積プロセスを実施すること、
をさらに含む、請求項1〜5のいずれかに記載の方法。 - 前記ルテニウム材料、前記第1の酸化ストロンチウム材料、および前記第2の酸化ストロンチウム材料を焼鈍することは、窒素雰囲気中で急速熱焼鈍を実施することを含む、請求項1〜6のいずれかに記載の方法。
- 第1の原子層堆積プロセスを使用して、第1の酸化ストロンチウム材料をルテニウム材料上に形成することは、
原子層堆積プロセスにおいて、第1のストロンチウム前駆体を前記ルテニウム材料上に化学吸着させることと、
水蒸気を前記化学吸着させた第1のストロンチウム前駆体と反応させることと、
前記第1の酸化ストロンチウム材料を前記ルテニウム材料上に形成するように、第1のサイクル数にわたって、前記第1のストロンチウム前駆体を化学吸着させること、および前記水蒸気を前記化学吸着させた第1のストロンチウム前駆体と反応させることのサイクルを繰り返すことと、
を含む、請求項1〜7のいずれかに記載の方法。 - 第2の原子層堆積プロセスを使用して、第2の酸化ストロンチウム材料を前記第1の酸化ストロンチウム材料上に形成することは、
原子層堆積プロセスにおいて、第2のストロンチウム前駆体を前記第1の酸化ストロンチウム材料上に化学吸着させることと、
オゾンを前記化学吸着させた第2のストロンチウム前駆体と反応させることと、
第2の酸化ストロンチウム材料を前記第1の酸化ストロンチウム材料上に形成するように、第2のサイクル数にわたって、前記第2のストロンチウム前駆体を化学吸着させること、および前記オゾンを前記化学吸着させた第2のストロンチウム前駆体と反応させることのサイクルを繰り返すことと、
を含む、請求項1〜8のいずれかに記載の方法。 - 前記ルテニウム材料はルテニウム電極であり、前記方法は、
酸化ストロンチウムチタン誘電体を前記酸化ストロンチウムルテニウム上に形成することと、
コンデンサを形成するように、第2の電極を前記酸化ストロンチウムチタン誘電体の上に形成することと、
をさらに含む、請求項1〜9のいずれかに記載の方法。 - 酸化ストロンチウムチタン誘電体を前記酸化ストロンチウムルテニウム上に形成することは、原子層堆積によって酸化ストロンチウムを形成すること、および原子層堆積によって酸化チタンを形成することの交互サイクルを実施することを含む、請求項10に記載の方法。
- 前記第2の電極を形成する前に、前記酸化ストロンチウムチタン誘電体を焼鈍することをさらに含む、請求項10または11に記載の方法。
- 第2の電極を前記酸化ストロンチウムチタン誘電体の上に形成することは、ポリシリコン電極を形成することを含む、請求項10〜12のいずれかに記載の方法。
- 集積回路デバイスであって、
ルテニウムと、
前記ルテニウムの上側にある酸化ストロンチウムチタン誘電体と、
前記ルテニウムと前記酸化ストロンチウムチタン誘電体との間に間置される、酸化ストロンチウムルテニウム界面と、を備え、
前記酸化ストロンチウムルテニウム界面は、
第1の酸化ストロンチウム材料を前記ルテニウム上に形成するように、ストロンチウム前駆体を第1の前駆体として使用し、かつ水蒸気を第2の前駆体として使用して、第1の原子層堆積プロセスを実施することと、
第2の酸化ストロンチウム材料を前記第1の酸化ストロンチウム材料上に形成するように、ストロンチウム前駆体を第1の前駆体として使用し、かつオゾンを第2の前駆体として使用して、第2の原子層堆積プロセスを実施することと、
前記酸化ストロンチウムルテニウムを形成するように、前記ルテニウム、前記第1の酸化ストロンチウム材料、および第2の酸化ストロンチウム材料を焼鈍することと、
を含む方法を使用して形成される、集積回路デバイス。 - 前記方法において、前記第1の酸化ストロンチウム材料を形成すること、および前記第2の酸化ストロンチウム材料を形成することは、前記第1の原子層堆積プロセスおよび前記第2の原子層堆積プロセスに同じストロンチウム前駆体を使用することを含む、請求項14に記載の集積回路デバイス。
- 前記方法は、
少なくとも前記第1の酸化ストロンチウム材料が連続するまで、前記第1の原子層堆積プロセスを実施することと、
少なくとも前記第2の酸化ストロンチウム材料が連続するまで、前記第2の原子層堆積プロセスを実施することと、
をさらに含む、請求項14または15に記載の集積回路デバイス。 - 前記方法において、前記第1の酸化ストロンチウム材料を形成すること、および前記第2の酸化ストロンチウム材料を形成することは、少なくとも20Åの前記第1の酸化ストロンチウム材料を形成することと、少なくとも20Åの前記第2の酸化ストロンチウム材料を形成することとを含む、請求項14〜16のいずれかに記載の集積回路デバイス。
- 前記方法において、前記酸化ストロンチウムルテニウム界面を形成するように、前記ルテニウム、前記第1の酸化ストロンチウム材料、および前記第2の酸化ストロンチウム材料を焼鈍することは、窒素雰囲気中で急速熱焼鈍を実施することを含む、請求項14〜17のいずれかに記載の集積回路デバイス。
- 前記ルテニウムは、コンデンサの第1の電極であり、前記酸化ストロンチウムチタン誘電体は、前記コンデンサの誘電体である、請求項14〜18のいずれかに記載の集積回路デバイス。
- 前記集積回路デバイスはメモリデバイスであり、
メモリセルアレイであって、アクセストランジスタおよびコンデンサを構成する、メモリセルアレイをさらに備え、
前記コンデンサのうちの少なくとも1つは、
第1の電極としてのルテニウムと、
前記第1の電極と第2の電極との間に間置される、酸化ストロンチウムチタン誘電体と、
を備える、請求項14〜18のいずれかに記載の集積回路デバイス。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015214730A (ja) * | 2014-05-12 | 2015-12-03 | 東京エレクトロン株式会社 | 成膜方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5616591B2 (ja) * | 2008-06-20 | 2014-10-29 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
US8202808B2 (en) * | 2009-06-03 | 2012-06-19 | Intermolecular, Inc. | Methods of forming strontium titanate films |
EP2434531B1 (en) * | 2010-09-28 | 2019-12-04 | IMEC vzw | Method for manufacturing of a metal-insulator-metal capacitor |
CN103628037A (zh) * | 2013-12-10 | 2014-03-12 | 中国科学院微电子研究所 | 一种高介电常数氧化物的制备方法 |
CN104183474A (zh) * | 2014-08-27 | 2014-12-03 | 上海华力微电子有限公司 | 双层高k介质结构的制作方法 |
EP3660933A1 (en) | 2018-11-30 | 2020-06-03 | IMEC vzw | Structure for use in a metal-insulator-metal capacitor |
KR20210075401A (ko) | 2019-12-13 | 2021-06-23 | 삼성전자주식회사 | 커패시터 구조물 및 이를 포함하는 반도체 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246490A (ja) * | 1996-03-11 | 1997-09-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000269424A (ja) * | 1999-03-17 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004006678A (ja) * | 2002-02-28 | 2004-01-08 | Samsung Electronics Co Ltd | 半導体デバイス用のキャパシタ及びその製造方法並びにこのキャパシタを用いる電子デバイス |
JP2004023042A (ja) * | 2002-06-20 | 2004-01-22 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2008028051A (ja) * | 2006-07-20 | 2008-02-07 | Elpida Memory Inc | ナノラミネート構造誘電膜の形成方法 |
JP2008166563A (ja) * | 2006-12-28 | 2008-07-17 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169866B2 (ja) * | 1997-11-04 | 2001-05-28 | 日本電気株式会社 | 薄膜キャパシタ及びその製造方法 |
JP3249496B2 (ja) * | 1998-11-10 | 2002-01-21 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
US7371633B2 (en) * | 2001-02-02 | 2008-05-13 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
US6674633B2 (en) * | 2001-02-28 | 2004-01-06 | Fujitsu Limited | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
KR100416602B1 (ko) * | 2001-08-08 | 2004-02-05 | 삼성전자주식회사 | 스택형 캐패시터의 제조 방법 |
KR20030023143A (ko) | 2001-09-12 | 2003-03-19 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
KR100443350B1 (ko) * | 2001-12-29 | 2004-08-09 | 주식회사 하이닉스반도체 | 스트론튬루테늄산화물의 단원자층 증착 방법 |
KR100591776B1 (ko) * | 2005-01-03 | 2006-06-26 | 삼성전자주식회사 | 강유전체 메모리 소자 및 그 제조방법 |
US7217643B2 (en) * | 2005-02-24 | 2007-05-15 | Freescale Semiconductors, Inc. | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures |
KR100785458B1 (ko) * | 2005-05-18 | 2007-12-13 | 삼성전자주식회사 | 강유전체 박막의 제조 방법 및 이를 이용한 반도체 장치의제조 방법 |
US7416994B2 (en) * | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
KR100636023B1 (ko) * | 2005-08-02 | 2006-10-18 | 삼성전자주식회사 | 유기금속 전구체 및 이를 이용한 박막 제조방법 |
US7741230B2 (en) * | 2006-08-08 | 2010-06-22 | Intel Corporation | Highly-selective metal etchants |
US7582549B2 (en) * | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
KR100819003B1 (ko) * | 2006-10-20 | 2008-04-02 | 삼성전자주식회사 | 비휘발성 메모리 소자 제조 방법 |
KR101498732B1 (ko) * | 2007-06-26 | 2015-03-04 | 가부시키가이샤 코준도카가쿠 켄큐쇼 | 스트론튬 함유 박막의 형성 방법 |
JP5260148B2 (ja) * | 2007-06-26 | 2013-08-14 | 株式会社高純度化学研究所 | ストロンチウム含有薄膜の形成方法 |
US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
-
2009
- 2009-04-10 US US12/421,916 patent/US7939442B2/en active Active
-
2010
- 2010-04-07 SG SG2011072535A patent/SG175070A1/en unknown
- 2010-04-07 CN CN2010800207030A patent/CN102421935B/zh active Active
- 2010-04-07 EP EP10762353A patent/EP2417281A4/en not_active Withdrawn
- 2010-04-07 JP JP2012504813A patent/JP5388015B2/ja active Active
- 2010-04-07 WO PCT/US2010/030205 patent/WO2010118109A2/en active Application Filing
- 2010-04-07 KR KR1020117026686A patent/KR101392542B1/ko active IP Right Grant
- 2010-04-09 TW TW099111147A patent/TWI457458B/zh active
-
2011
- 2011-05-09 US US13/103,162 patent/US8399952B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246490A (ja) * | 1996-03-11 | 1997-09-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000269424A (ja) * | 1999-03-17 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004006678A (ja) * | 2002-02-28 | 2004-01-08 | Samsung Electronics Co Ltd | 半導体デバイス用のキャパシタ及びその製造方法並びにこのキャパシタを用いる電子デバイス |
JP2004023042A (ja) * | 2002-06-20 | 2004-01-22 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2008028051A (ja) * | 2006-07-20 | 2008-02-07 | Elpida Memory Inc | ナノラミネート構造誘電膜の形成方法 |
JP2008166563A (ja) * | 2006-12-28 | 2008-07-17 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN6013008593; Ahn, J.-H., et al.: '"Enhanced Dielectric properties of SrTi O3 films with a SrRu O3 Seed by Plasma-enhanced atomic layer' Electrochemical and Solid-State Letters Vol. 12, No. 2, 20081114, pp. G5-G8 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015214730A (ja) * | 2014-05-12 | 2015-12-03 | 東京エレクトロン株式会社 | 成膜方法 |
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