JP2012522897A5 - - Google Patents

Download PDF

Info

Publication number
JP2012522897A5
JP2012522897A5 JP2012503952A JP2012503952A JP2012522897A5 JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5 JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5
Authority
JP
Japan
Prior art keywords
copper
metal
alkylene
group
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012503952A
Other languages
English (en)
Japanese (ja)
Other versions
JP5702359B2 (ja
JP2012522897A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2010/053881 external-priority patent/WO2010115717A1/en
Publication of JP2012522897A publication Critical patent/JP2012522897A/ja
Publication of JP2012522897A5 publication Critical patent/JP2012522897A5/ja
Application granted granted Critical
Publication of JP5702359B2 publication Critical patent/JP5702359B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012503952A 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5702359B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09005106.1 2009-04-07
EP09005106 2009-04-07
US25633309P 2009-10-30 2009-10-30
US61/256,333 2009-10-30
PCT/EP2010/053881 WO2010115717A1 (en) 2009-04-07 2010-03-25 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522897A JP2012522897A (ja) 2012-09-27
JP2012522897A5 true JP2012522897A5 (OSRAM) 2014-09-11
JP5702359B2 JP5702359B2 (ja) 2015-04-15

Family

ID=42935665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503952A Active JP5702359B2 (ja) 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120024711A1 (OSRAM)
EP (1) EP2417283B1 (OSRAM)
JP (1) JP5702359B2 (OSRAM)
KR (1) KR101720365B1 (OSRAM)
CN (1) CN102365396B (OSRAM)
IL (1) IL215018B (OSRAM)
MY (1) MY158203A (OSRAM)
RU (1) RU2529607C2 (OSRAM)
SG (1) SG174264A1 (OSRAM)
TW (1) TWI489011B (OSRAM)
WO (1) WO2010115717A1 (OSRAM)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
JP5714581B2 (ja) 2009-07-30 2015-05-07 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
US10106512B2 (en) * 2015-04-28 2018-10-23 Dow Global Technologies Llc Metal plating compositions
EP3141633B1 (en) * 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
CN114059125A (zh) * 2016-07-18 2022-02-18 巴斯夫欧洲公司 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物
CN109952390A (zh) * 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN115182004A (zh) * 2016-12-20 2022-10-14 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN111051576B (zh) 2017-09-04 2022-08-16 巴斯夫欧洲公司 用于金属电镀的包含流平剂的组合物
US11459665B2 (en) 2017-12-20 2022-10-04 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
SG11202009106XA (en) * 2018-04-20 2020-11-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
CN118043502A (zh) 2021-10-01 2024-05-14 巴斯夫欧洲公司 用于铜电沉积的包含聚氨基酰胺型流平剂的组合物
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
RU2103420C1 (ru) * 1995-06-06 1998-01-27 Калининградский государственный университет Электролит блестящего меднения
DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
US6833479B2 (en) 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
CU23716A1 (es) * 2008-09-30 2011-10-05 Ct Ingenieria Genetica Biotech Péptido antagonista de la actividad de la interleucina-15

Similar Documents

Publication Publication Date Title
JP5702359B2 (ja) サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
JP5722872B2 (ja) サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
US11486049B2 (en) Composition for metal electroplating comprising leveling agent
JP2012522897A5 (OSRAM)
JP5702360B2 (ja) ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物
US11926918B2 (en) Composition for metal plating comprising suppressing agent for void free filing
JP2012522900A5 (OSRAM)
SG171904A1 (en) Composition for metal electroplating comprising leveling agent
WO2010115757A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling