MY158203A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature fillingInfo
- Publication number
- MY158203A MY158203A MYPI2011004272A MYPI2011004272A MY158203A MY 158203 A MY158203 A MY 158203A MY PI2011004272 A MYPI2011004272 A MY PI2011004272A MY PI2011004272 A MYPI2011004272 A MY PI2011004272A MY 158203 A MY158203 A MY 158203A
- Authority
- MY
- Malaysia
- Prior art keywords
- composition
- suppressing agent
- metal plating
- radicals
- void free
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09005106 | 2009-04-07 | ||
| US25633309P | 2009-10-30 | 2009-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY158203A true MY158203A (en) | 2016-09-15 |
Family
ID=42935665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2011004272A MY158203A (en) | 2009-04-07 | 2010-03-25 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US20120024711A1 (OSRAM) |
| EP (1) | EP2417283B1 (OSRAM) |
| JP (1) | JP5702359B2 (OSRAM) |
| KR (1) | KR101720365B1 (OSRAM) |
| CN (1) | CN102365396B (OSRAM) |
| IL (1) | IL215018B (OSRAM) |
| MY (1) | MY158203A (OSRAM) |
| RU (1) | RU2529607C2 (OSRAM) |
| SG (1) | SG174264A1 (OSRAM) |
| TW (1) | TWI489011B (OSRAM) |
| WO (1) | WO2010115717A1 (OSRAM) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200632147A (OSRAM) | 2004-11-12 | 2006-09-16 | ||
| CN102597329B (zh) | 2009-07-30 | 2015-12-16 | 巴斯夫欧洲公司 | 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 |
| TWI500823B (zh) | 2010-03-18 | 2015-09-21 | Basf Se | 包含整平劑之金屬電鍍用組合物 |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| MY170653A (en) | 2010-12-21 | 2019-08-23 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| SG194983A1 (en) | 2011-06-01 | 2013-12-30 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| MY172822A (en) | 2012-11-09 | 2019-12-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| JP2018517793A (ja) * | 2015-04-28 | 2018-07-05 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 電気めっき浴用の添加剤としてのビス無水物及びジアミンの反応生成物 |
| ES2681836T3 (es) * | 2015-09-10 | 2018-09-17 | Atotech Deutschland Gmbh | Composición de baño para chapado de cobre |
| WO2018015168A1 (en) * | 2016-07-18 | 2018-01-25 | Basf Se | Composition for cobalt plating comprising additive for void-free submicron feature filling |
| WO2018057707A1 (en) | 2016-09-22 | 2018-03-29 | Macdermid Enthone Inc. | Copper electrodeposition in microelectronics |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US11926918B2 (en) | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP3728702B1 (en) * | 2017-12-20 | 2021-09-22 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| KR102769982B1 (ko) * | 2018-04-20 | 2025-02-18 | 바스프 에스이 | 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 |
| CN110284162B (zh) * | 2019-07-22 | 2020-06-30 | 广州三孚新材料科技股份有限公司 | 一种光伏汇流焊带无氰碱性镀铜液及其制备方法 |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| US20220333262A1 (en) | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| WO2021197950A1 (en) | 2020-04-03 | 2021-10-07 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| JP7781850B2 (ja) | 2020-07-13 | 2025-12-08 | ビーエーエスエフ ソシエタス・ヨーロピア | コバルトシード上の銅電気メッキ用組成物 |
| WO2023052254A1 (en) | 2021-10-01 | 2023-04-06 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| KR20250036166A (ko) | 2022-07-07 | 2025-03-13 | 바스프 에스이 | 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도 |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
| WO2025026863A1 (en) | 2023-08-03 | 2025-02-06 | Basf Se | Composition for copper electroplating on a metal seed |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| RU2103420C1 (ru) * | 1995-06-06 | 1998-01-27 | Калининградский государственный университет | Электролит блестящего меднения |
| DE19625991A1 (de) | 1996-06-28 | 1998-01-02 | Philips Patentverwaltung | Bildschirm mit haftungsvermittelnder Silikatschicht |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TW200632147A (OSRAM) * | 2004-11-12 | 2006-09-16 | ||
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
-
2010
- 2010-03-25 MY MYPI2011004272A patent/MY158203A/en unknown
- 2010-03-25 EP EP10710049.7A patent/EP2417283B1/en active Active
- 2010-03-25 CN CN201080015501.7A patent/CN102365396B/zh active Active
- 2010-03-25 SG SG2011064086A patent/SG174264A1/en unknown
- 2010-03-25 KR KR1020117026530A patent/KR101720365B1/ko active Active
- 2010-03-25 JP JP2012503952A patent/JP5702359B2/ja active Active
- 2010-03-25 RU RU2011144620/02A patent/RU2529607C2/ru not_active IP Right Cessation
- 2010-03-25 WO PCT/EP2010/053881 patent/WO2010115717A1/en not_active Ceased
- 2010-03-25 US US13/257,716 patent/US20120024711A1/en not_active Abandoned
- 2010-04-06 TW TW099110627A patent/TWI489011B/zh active
-
2011
- 2011-09-07 IL IL215018A patent/IL215018B/en active IP Right Grant
-
2021
- 2021-05-25 US US17/329,459 patent/US20210317582A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20120024711A1 (en) | 2012-02-02 |
| TWI489011B (zh) | 2015-06-21 |
| CN102365396A (zh) | 2012-02-29 |
| WO2010115717A1 (en) | 2010-10-14 |
| RU2011144620A (ru) | 2013-05-20 |
| EP2417283A1 (en) | 2012-02-15 |
| IL215018B (en) | 2018-02-28 |
| RU2529607C2 (ru) | 2014-09-27 |
| KR20120089564A (ko) | 2012-08-13 |
| KR101720365B1 (ko) | 2017-03-27 |
| IL215018A0 (en) | 2011-12-01 |
| SG174264A1 (en) | 2011-10-28 |
| TW201042095A (en) | 2010-12-01 |
| EP2417283B1 (en) | 2014-07-30 |
| JP5702359B2 (ja) | 2015-04-15 |
| JP2012522897A (ja) | 2012-09-27 |
| US20210317582A1 (en) | 2021-10-14 |
| CN102365396B (zh) | 2014-12-31 |
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