JP2012517698A - キャッピング層を有するイオン注入した基板および方法 - Google Patents

キャッピング層を有するイオン注入した基板および方法 Download PDF

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JP2012517698A
JP2012517698A JP2011549143A JP2011549143A JP2012517698A JP 2012517698 A JP2012517698 A JP 2012517698A JP 2011549143 A JP2011549143 A JP 2011549143A JP 2011549143 A JP2011549143 A JP 2011549143A JP 2012517698 A JP2012517698 A JP 2012517698A
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Prior art keywords
substrate
ions
capping layer
silicon
gas
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JP2012517698A5 (enExample
Inventor
アグア ボルニケル， ホセ イグナシオ デル
ツェ プーン，
ロベール シュレーテルカンプ，
マジード フォード，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2011549143A 2009-02-06 2009-12-29 キャッピング層を有するイオン注入した基板および方法 Pending JP2012517698A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/367,306 2009-02-06
US12/367,306 US7858503B2 (en) 2009-02-06 2009-02-06 Ion implanted substrate having capping layer and method
PCT/US2009/069754 WO2010090693A2 (en) 2009-02-06 2009-12-29 Ion implanted substrate having capping layer and method

Publications (2)

Publication Number Publication Date
JP2012517698A true JP2012517698A (ja) 2012-08-02
JP2012517698A5 JP2012517698A5 (enExample) 2013-02-14

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JP2011549143A Pending JP2012517698A (ja) 2009-02-06 2009-12-29 キャッピング層を有するイオン注入した基板および方法

Country Status (7)

Country Link
US (2) US7858503B2 (enExample)
EP (1) EP2394293A4 (enExample)
JP (1) JP2012517698A (enExample)
KR (1) KR20110122700A (enExample)
CN (1) CN102308371A (enExample)
TW (1) TWI469190B (enExample)
WO (1) WO2010090693A2 (enExample)

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US8471307B2 (en) * 2008-06-13 2013-06-25 Texas Instruments Incorporated In-situ carbon doped e-SiGeCB stack for MOS transistor
DE102008035816B4 (de) 2008-07-31 2011-08-25 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials
US7977224B2 (en) * 2008-12-03 2011-07-12 The United States Of America As Represented By The Secretary Of The Army Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
EP3062330A3 (en) * 2009-10-27 2016-11-16 Entegris, Inc. Ion implantation system and method
JP5238780B2 (ja) * 2010-09-17 2013-07-17 株式会社東芝 磁気記録媒体とその製造方法及び磁気記録装置
TWI462285B (zh) * 2010-12-30 2014-11-21 Lextar Electronics Corp 半導體結構及其製造方法
WO2012129454A2 (en) * 2011-03-24 2012-09-27 Advanced Technology Materials, Inc. Cluster ion implantation of arsenic and phosphorus
US9011968B2 (en) 2011-09-16 2015-04-21 Empire Technology Development Llc Alteration of graphene defects
US9812291B2 (en) 2012-02-14 2017-11-07 Entegris, Inc. Alternate materials and mixtures to minimize phosphorus buildup in implant applications
TWI522490B (zh) * 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
SG10201801299YA (en) * 2013-08-16 2018-03-28 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
CN107078009B (zh) * 2014-09-01 2019-04-12 恩特格里斯公司 利用增强源技术进行磷或砷离子植入
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
CN108962734B (zh) * 2018-06-27 2021-01-01 武汉华星光电半导体显示技术有限公司 一种多晶硅半导体层的制备方法、薄膜晶体管及制备方法
US11127601B2 (en) 2019-05-21 2021-09-21 Applied Materials, Inc. Phosphorus fugitive emission control
US12308237B2 (en) * 2021-12-03 2025-05-20 Applied Materials, Inc. Ion implantation to increase MOSFET threshold voltage
EP4544096A1 (en) * 2022-06-27 2025-04-30 Austin Lo Plasma-enhanced chemical vapor deposition for structurally- complex substrates
WO2025000497A1 (en) * 2023-06-30 2025-01-02 Applied Materials, Inc. Interfacial layer for anneal capping layer

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JPH0496232A (ja) * 1990-08-04 1992-03-27 Sumitomo Electric Ind Ltd 化合物半導体ウエハの熱処理方法
JP2001127068A (ja) * 1999-10-29 2001-05-11 Nec Corp 多結晶シリコン膜の水素化処理方法および薄膜トランジスタの製造方法
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Also Published As

Publication number Publication date
EP2394293A4 (en) 2012-12-12
TW201034059A (en) 2010-09-16
KR20110122700A (ko) 2011-11-10
US20110092058A1 (en) 2011-04-21
TWI469190B (zh) 2015-01-11
CN102308371A (zh) 2012-01-04
EP2394293A2 (en) 2011-12-14
US8198180B2 (en) 2012-06-12
WO2010090693A3 (en) 2010-10-14
US20100200954A1 (en) 2010-08-12
US7858503B2 (en) 2010-12-28
WO2010090693A2 (en) 2010-08-12

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