JP2012517698A5 - - Google Patents
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- Publication number
- JP2012517698A5 JP2012517698A5 JP2011549143A JP2011549143A JP2012517698A5 JP 2012517698 A5 JP2012517698 A5 JP 2012517698A5 JP 2011549143 A JP2011549143 A JP 2011549143A JP 2011549143 A JP2011549143 A JP 2011549143A JP 2012517698 A5 JP2012517698 A5 JP 2012517698A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ions
- capping layer
- silicon
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 27
- 239000007789 gas Substances 0.000 claims 15
- 150000002500 ions Chemical class 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 12
- 238000000151 deposition Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- 239000011148 porous material Substances 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000000047 product Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- -1 arsenic ions Chemical class 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000013067 intermediate product Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/367,306 | 2009-02-06 | ||
| US12/367,306 US7858503B2 (en) | 2009-02-06 | 2009-02-06 | Ion implanted substrate having capping layer and method |
| PCT/US2009/069754 WO2010090693A2 (en) | 2009-02-06 | 2009-12-29 | Ion implanted substrate having capping layer and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012517698A JP2012517698A (ja) | 2012-08-02 |
| JP2012517698A5 true JP2012517698A5 (enExample) | 2013-02-14 |
Family
ID=42539730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011549143A Pending JP2012517698A (ja) | 2009-02-06 | 2009-12-29 | キャッピング層を有するイオン注入した基板および方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7858503B2 (enExample) |
| EP (1) | EP2394293A4 (enExample) |
| JP (1) | JP2012517698A (enExample) |
| KR (1) | KR20110122700A (enExample) |
| CN (1) | CN102308371A (enExample) |
| TW (1) | TWI469190B (enExample) |
| WO (1) | WO2010090693A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471307B2 (en) * | 2008-06-13 | 2013-06-25 | Texas Instruments Incorporated | In-situ carbon doped e-SiGeCB stack for MOS transistor |
| DE102008035816B4 (de) | 2008-07-31 | 2011-08-25 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 | Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials |
| US7977224B2 (en) * | 2008-12-03 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Army | Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby |
| US7858503B2 (en) * | 2009-02-06 | 2010-12-28 | Applied Materials, Inc. | Ion implanted substrate having capping layer and method |
| EP3062330A3 (en) * | 2009-10-27 | 2016-11-16 | Entegris, Inc. | Ion implantation system and method |
| JP5238780B2 (ja) * | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体とその製造方法及び磁気記録装置 |
| TWI462285B (zh) * | 2010-12-30 | 2014-11-21 | Lextar Electronics Corp | 半導體結構及其製造方法 |
| WO2012129454A2 (en) * | 2011-03-24 | 2012-09-27 | Advanced Technology Materials, Inc. | Cluster ion implantation of arsenic and phosphorus |
| US9011968B2 (en) | 2011-09-16 | 2015-04-21 | Empire Technology Development Llc | Alteration of graphene defects |
| US9812291B2 (en) | 2012-02-14 | 2017-11-07 | Entegris, Inc. | Alternate materials and mixtures to minimize phosphorus buildup in implant applications |
| TWI522490B (zh) * | 2012-05-10 | 2016-02-21 | 應用材料股份有限公司 | 利用微波電漿化學氣相沈積在基板上沈積膜的方法 |
| SG10201801299YA (en) * | 2013-08-16 | 2018-03-28 | Entegris Inc | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| US9570271B2 (en) * | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
| CN107078009B (zh) * | 2014-09-01 | 2019-04-12 | 恩特格里斯公司 | 利用增强源技术进行磷或砷离子植入 |
| US10460941B2 (en) * | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
| CN108962734B (zh) * | 2018-06-27 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | 一种多晶硅半导体层的制备方法、薄膜晶体管及制备方法 |
| US11127601B2 (en) | 2019-05-21 | 2021-09-21 | Applied Materials, Inc. | Phosphorus fugitive emission control |
| US12308237B2 (en) * | 2021-12-03 | 2025-05-20 | Applied Materials, Inc. | Ion implantation to increase MOSFET threshold voltage |
| EP4544096A1 (en) * | 2022-06-27 | 2025-04-30 | Austin Lo | Plasma-enhanced chemical vapor deposition for structurally- complex substrates |
| WO2025000497A1 (en) * | 2023-06-30 | 2025-01-02 | Applied Materials, Inc. | Interfacial layer for anneal capping layer |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2662452B2 (ja) * | 1990-08-04 | 1997-10-15 | 住友電気工業株式会社 | 化合物半導体ウエハの熱処理方法 |
| JP2734344B2 (ja) | 1993-08-20 | 1998-03-30 | 株式会社デンソー | 半導体装置の製造方法 |
| US6171945B1 (en) | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
| EP1094506A3 (en) | 1999-10-18 | 2004-03-03 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| US6875687B1 (en) | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| JP4382219B2 (ja) * | 1999-10-29 | 2009-12-09 | 日本電気株式会社 | 多結晶シリコン膜の水素化処理方法および薄膜トランジスタの製造方法 |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6559070B1 (en) | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
| US7166524B2 (en) * | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US6841006B2 (en) | 2001-08-23 | 2005-01-11 | Applied Materials, Inc. | Atmospheric substrate processing apparatus for depositing multiple layers on a substrate |
| US7431585B2 (en) | 2002-01-24 | 2008-10-07 | Applied Materials, Inc. | Apparatus and method for heating substrates |
| US6656840B2 (en) | 2002-04-29 | 2003-12-02 | Applied Materials Inc. | Method for forming silicon containing layers on a substrate |
| US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
| JP4339563B2 (ja) | 2002-09-18 | 2009-10-07 | シャープ株式会社 | 半導体基板の製造方法およびこの方法を用いた半導体装置の製造方法 |
| WO2004106987A2 (en) | 2003-05-29 | 2004-12-09 | Applied Materials, Inc. | Impurity-based waveguide detectors |
| US7075165B2 (en) | 2003-05-29 | 2006-07-11 | Applied Material, Inc. | Embedded waveguide detectors |
| KR20050035981A (ko) * | 2003-10-14 | 2005-04-20 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
| US6936518B2 (en) * | 2004-01-21 | 2005-08-30 | Intel Corporation | Creating shallow junction transistors |
| US7611996B2 (en) | 2004-03-31 | 2009-11-03 | Applied Materials, Inc. | Multi-stage curing of low K nano-porous films |
| US20050227502A1 (en) | 2004-04-12 | 2005-10-13 | Applied Materials, Inc. | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity |
| WO2005119745A1 (ja) * | 2004-06-04 | 2005-12-15 | Matsushita Electric Industrial Co., Ltd. | 不純物導入方法 |
| US7413957B2 (en) | 2004-06-24 | 2008-08-19 | Applied Materials, Inc. | Methods for forming a transistor |
| US7316960B2 (en) * | 2004-07-13 | 2008-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strain enhanced ultra shallow junction formation |
| US20060019032A1 (en) | 2004-07-23 | 2006-01-26 | Yaxin Wang | Low thermal budget silicon nitride formation for advance transistor fabrication |
| US7422776B2 (en) | 2004-08-24 | 2008-09-09 | Applied Materials, Inc. | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) |
| US7501354B2 (en) | 2005-01-18 | 2009-03-10 | Applied Materials, Inc. | Formation of low K material utilizing process having readily cleaned by-products |
| US7365378B2 (en) * | 2005-03-31 | 2008-04-29 | International Business Machines Corporation | MOSFET structure with ultra-low K spacer |
| EP1897132A4 (en) * | 2005-06-27 | 2014-11-26 | Univ California | METHOD FOR THE PRODUCTION OF SEALED TRENCHES |
| US7045437B1 (en) * | 2005-06-27 | 2006-05-16 | The Regents Of The University Of California | Method for fabricating shallow trenches |
| US20070254491A1 (en) | 2006-04-29 | 2007-11-01 | Applied Materials, Inc. | Protective layer for a low k dielectric film and methods of forming the same |
| US20080009141A1 (en) * | 2006-07-05 | 2008-01-10 | International Business Machines Corporation | Methods to form SiCOH or SiCNH dielectrics and structures including the same |
| US7297376B1 (en) | 2006-07-07 | 2007-11-20 | Applied Materials, Inc. | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers |
| JP5134223B2 (ja) * | 2006-09-06 | 2013-01-30 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| US7410916B2 (en) | 2006-11-21 | 2008-08-12 | Applied Materials, Inc. | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter |
| WO2008077020A2 (en) * | 2006-12-18 | 2008-06-26 | Applied Materials, Inc. | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers |
| KR20090108721A (ko) * | 2007-01-29 | 2009-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 신규한 공기 갭 통합 방법 |
| WO2009045964A1 (en) | 2007-10-01 | 2009-04-09 | Applied Materials, Inc. | Low temperature conformal oxide formation and applications |
| US20100087062A1 (en) * | 2008-10-06 | 2010-04-08 | Applied Materials, Inc. | High temperature bd development for memory applications |
| US7858503B2 (en) | 2009-02-06 | 2010-12-28 | Applied Materials, Inc. | Ion implanted substrate having capping layer and method |
-
2009
- 2009-02-06 US US12/367,306 patent/US7858503B2/en not_active Expired - Fee Related
- 2009-12-29 JP JP2011549143A patent/JP2012517698A/ja active Pending
- 2009-12-29 WO PCT/US2009/069754 patent/WO2010090693A2/en not_active Ceased
- 2009-12-29 CN CN2009801564831A patent/CN102308371A/zh active Pending
- 2009-12-29 EP EP09839838A patent/EP2394293A4/en not_active Withdrawn
- 2009-12-29 KR KR1020117020303A patent/KR20110122700A/ko not_active Withdrawn
- 2009-12-31 TW TW98146476A patent/TWI469190B/zh not_active IP Right Cessation
-
2010
- 2010-12-21 US US12/974,653 patent/US8198180B2/en not_active Expired - Fee Related
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