CN102308371A - 具有覆盖层的经离子注入的衬底及方法 - Google Patents

具有覆盖层的经离子注入的衬底及方法 Download PDF

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Publication number
CN102308371A
CN102308371A CN2009801564831A CN200980156483A CN102308371A CN 102308371 A CN102308371 A CN 102308371A CN 2009801564831 A CN2009801564831 A CN 2009801564831A CN 200980156483 A CN200980156483 A CN 200980156483A CN 102308371 A CN102308371 A CN 102308371A
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substrate
ion
region
gas
silicon
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Chinese (zh)
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J·I·戴尔阿瓜博尼奇尔
T·普恩
R·斯查特尔卡普
M·孚德
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2009801564831A 2009-02-06 2009-12-29 具有覆盖层的经离子注入的衬底及方法 Pending CN102308371A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/367,306 2009-02-06
US12/367,306 US7858503B2 (en) 2009-02-06 2009-02-06 Ion implanted substrate having capping layer and method
PCT/US2009/069754 WO2010090693A2 (en) 2009-02-06 2009-12-29 Ion implanted substrate having capping layer and method

Publications (1)

Publication Number Publication Date
CN102308371A true CN102308371A (zh) 2012-01-04

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Country Status (7)

Country Link
US (2) US7858503B2 (enExample)
EP (1) EP2394293A4 (enExample)
JP (1) JP2012517698A (enExample)
KR (1) KR20110122700A (enExample)
CN (1) CN102308371A (enExample)
TW (1) TWI469190B (enExample)
WO (1) WO2010090693A2 (enExample)

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CN109119316A (zh) * 2014-03-03 2019-01-01 普莱克斯技术有限公司 含硼掺杂剂组合物、使用其的系统和方法
CN110085499A (zh) * 2014-09-01 2019-08-02 恩特格里斯公司 利用增强源技术进行磷或砷离子植入

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US7977224B2 (en) * 2008-12-03 2011-07-12 The United States Of America As Represented By The Secretary Of The Army Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
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TWI462285B (zh) * 2010-12-30 2014-11-21 Lextar Electronics Corp 半導體結構及其製造方法
WO2012129454A2 (en) * 2011-03-24 2012-09-27 Advanced Technology Materials, Inc. Cluster ion implantation of arsenic and phosphorus
US9011968B2 (en) 2011-09-16 2015-04-21 Empire Technology Development Llc Alteration of graphene defects
US9812291B2 (en) 2012-02-14 2017-11-07 Entegris, Inc. Alternate materials and mixtures to minimize phosphorus buildup in implant applications
TWI522490B (zh) * 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
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US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
CN108962734B (zh) * 2018-06-27 2021-01-01 武汉华星光电半导体显示技术有限公司 一种多晶硅半导体层的制备方法、薄膜晶体管及制备方法
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US12308237B2 (en) * 2021-12-03 2025-05-20 Applied Materials, Inc. Ion implantation to increase MOSFET threshold voltage
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CN109119316A (zh) * 2014-03-03 2019-01-01 普莱克斯技术有限公司 含硼掺杂剂组合物、使用其的系统和方法
CN109119316B (zh) * 2014-03-03 2022-02-08 普莱克斯技术有限公司 含硼掺杂剂组合物、使用其的系统和方法
CN110085499A (zh) * 2014-09-01 2019-08-02 恩特格里斯公司 利用增强源技术进行磷或砷离子植入
CN110085499B (zh) * 2014-09-01 2022-03-04 恩特格里斯公司 利用增强源技术进行磷或砷离子植入

Also Published As

Publication number Publication date
EP2394293A4 (en) 2012-12-12
TW201034059A (en) 2010-09-16
KR20110122700A (ko) 2011-11-10
US20110092058A1 (en) 2011-04-21
TWI469190B (zh) 2015-01-11
EP2394293A2 (en) 2011-12-14
US8198180B2 (en) 2012-06-12
JP2012517698A (ja) 2012-08-02
WO2010090693A3 (en) 2010-10-14
US20100200954A1 (en) 2010-08-12
US7858503B2 (en) 2010-12-28
WO2010090693A2 (en) 2010-08-12

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Application publication date: 20120104