JP2012510183A - エミッタ層に接触する裏面バイアを備えた太陽電池 - Google Patents
エミッタ層に接触する裏面バイアを備えた太陽電池 Download PDFInfo
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Abstract
【選択図】なし
Description
本願は、2008年11月26日付けで提出された米国仮特許出願第61/118,296号の利益及び優先権を主張し、その開示全体はここに引用して援用する。
本願は、太陽電池装置などの光起電性装置に関する。より詳細には、本願は、エミッタ層などの埋込半導体層との裏面接点を備えた光起電性装置に関する。
Claims (19)
- 光起電性装置であって、
少なくとも1つの接合領域と、
前記接合領域に形成されると共に、前記装置の底面から前記接合領域の内部に軸方向に延伸したバイアホールであって、前記接合領域を完全に貫通して延伸することなく前記接合領域内で終了するバイアホールと、
前記バイアホールの内表面の少なくとも一部に形成された絶縁層と、
前記絶縁層に形成されると共に前記接合領域に接触した導電層とを含む、光起電性装置。 - 前記接合領域がエミッタ領域及びベース領域を含み、前記バイアホールが前記エミッタ領域で終了する、請求項1に記載の光起電性装置。
- 前記エミッタ領域が複数層を含む、請求項2に記載の光起電性装置。
- 前記エミッタ領域が、エミッタ接点層と、窓層と、エミッタ層とを含み、前記バイアホールが前記エミッタ接点層において或いはその内部で終了する、請求項3に記載の光起電性装置。
- 前記接合領域内で終了する複数のバイアホールをさらに含む、請求項1に記載の光起電性装置。
- 前記複数のバイアホールがグリッドパターンで設けられている、請求項5に記載の光起電性装置。
- 複数の接合領域をさらに含み、前記複数の接合領域のそれぞれがエミッタ領域とベース領域とを含み、前記バイアホールが前記複数の接合領域の何れかの前記エミッタ領域または前記ベース領域内で終了する、請求項1に記載の光起電性装置。
- 前記複数の接合領域の何れかの前記エミッタ領域が、エミッタ接点層と、窓層と、エミッタ層とを含み、前記バイアホールが前記エミッタ接点層において或いはその内部で終了する、請求項7に記載の光起電性装置。
- 複数のバイアホールをさらに含み、前記バイアホールのそれぞれが前記複数の接合領域の何れかの前記エミッタ領域または前記ベース領域で終了する、請求項7に記載の光起電性装置。
- 前記複数のバイアホールのそれぞれが、前記複数の接合領域の何れかの前記エミッタ領域で終了する、請求項9に記載の光起電性装置。
- 前記複数の接合領域のそれぞれの前記エミッタ領域がエミッタ接点層を含み、前記複数のバイアホールが、前記複数の接合領域の前記エミッタ接点層において或いはその内部で終了する、請求項10に記載の光起電性装置。
- 前記光起電性装置が太陽電池装置である、請求項1に記載の光起電性装置。
- 前記バイアホールが前記装置の裏面に形成されている、請求項1に記載の光起電性装置。
- エミッタ接点パッドと、前記エミッタ接点パッドから延伸する複数のエミッタ接点バーと、ベース接点パッドと、前記ベース接点パッドから延伸する複数のベース接点バーとをさらに含む、請求項1に記載の光起電性装置。
- 太陽電池装置であって、
エミッタ領域及びベース領域を備えた第1接合領域と、
エミッタ領域及びベース領域を備えた第2接合領域と、
前記第2接合領域の前記ベース領域から前記第1接合領域の前記エミッタ領域内まで軸方向に延伸し、且つ前記第1接合領域の前記エミッタ領域において或いはその内部で終了する第1バイアホールと、
前記第1バイアホールの内表面の少なくとも一部に形成された第1絶縁層と、
前記第1バイアホールの前記内表面における前記第1絶縁層の少なくとも一部に形成された第1導電層であって、その少なくとも一部が、第1接合領域の前記エミッタ領域と直接的に電気接続している第1導電層と、
前記第2接合領域の前記ベース領域から前記第2接合領域の前記エミッタ領域内まで軸方向に延伸し、且つ前記第2接合領域の前記エミッタ領域において或いはその内部で終了する第2バイアホールと、
前記第2バイアホールの内表面の少なくとも一部に形成された第2絶縁層と、
前記第2バイアホールの前記第2絶縁層の少なくとも一部に形成された第2導電層であって、その少なくとも一部が、前記第2接合領域の前記エミッタ領域と直接的に電気接続している第2導電層と、を含む太陽電池装置。 - エミッタ領域及びベース領域を備えた第3接合領域と、
前記第2接合領域の前記ベース領域から前記第3接合領域の前記エミッタ領域内まで軸方向に延伸し、且つ前記第3接合領域の前記エミッタ領域において或いはその内部で終了する第3バイアホールと、
前記第3バイアホールの内表面の少なくとも一部に形成された第3絶縁層と、
前記第3バイアホールの前記内表面における前記第3絶縁層の少なくとも一部に形成された第3導電層であって、その少なくとも一部が、前記第3接合領域の前記エミッタ領域と直接的に電気接続している前記第3導電層とをさらに含む、請求項15に記載の太陽電池装置。 - 光起電性装置を形成するための方法であって、
エミッタ領域及びベース領域を備えた接合領域を形成する段階と、
前記装置の裏面から前記接合領域内まで軸方向に延伸するバイアホールであって、前記接合領域の前記エミッタ領域を完全に貫通して装置上側まで延伸することなく、前記接合領域の前記エミッタ領域において或いはその内部で終了するバイアホールを形成する段階と、
前記バイアホールの内表面の少なくとも一部に絶縁層を形成する段階と、
前記絶縁層の少なくとも一部に導電層を形成する段階とを含み、前記導電層が、前記接合領域の前記エミッタ領域と直接的に電気接続して配置される、方法。 - 複数の接合領域を形成する段階であって、前記接合領域のそれぞれがエミッタ領域及びベース領域を含む、形成する段階と、
前記複数の接合領域の前記エミッタ領域において或いはその内部で終了する複数のバイアホールを形成する段階とをさらに含む、請求項17に記載の方法。 - 前記複数のバイアホールは前記装置の裏面に設けられた裏面接点層に接触する、請求項18に記載の方法。
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US11829608P | 2008-11-26 | 2008-11-26 | |
US61/118,296 | 2008-11-26 | ||
PCT/US2009/065982 WO2010062991A1 (en) | 2008-11-26 | 2009-11-25 | Solar cell with a backside via to contact the emitter layer |
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JP2012510183A true JP2012510183A (ja) | 2012-04-26 |
JP5380546B2 JP5380546B2 (ja) | 2014-01-08 |
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EP (1) | EP2356689A4 (ja) |
JP (1) | JP5380546B2 (ja) |
AU (1) | AU2009319768B2 (ja) |
CA (1) | CA2744706C (ja) |
IL (1) | IL213148A (ja) |
TW (1) | TWI485867B (ja) |
WO (1) | WO2010062991A1 (ja) |
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US8993873B2 (en) | 2015-03-31 |
EP2356689A1 (en) | 2011-08-17 |
AU2009319768B2 (en) | 2016-01-07 |
JP5380546B2 (ja) | 2014-01-08 |
AU2009319768A1 (en) | 2011-06-30 |
WO2010062991A1 (en) | 2010-06-03 |
TW201036182A (en) | 2010-10-01 |
TWI485867B (zh) | 2015-05-21 |
US20100126573A1 (en) | 2010-05-27 |
CA2744706C (en) | 2015-11-24 |
CA2744706A1 (en) | 2010-06-03 |
IL213148A0 (en) | 2011-07-31 |
IL213148A (en) | 2016-09-29 |
EP2356689A4 (en) | 2013-11-20 |
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