JP2012510162A5 - - Google Patents

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Publication number
JP2012510162A5
JP2012510162A5 JP2011537626A JP2011537626A JP2012510162A5 JP 2012510162 A5 JP2012510162 A5 JP 2012510162A5 JP 2011537626 A JP2011537626 A JP 2011537626A JP 2011537626 A JP2011537626 A JP 2011537626A JP 2012510162 A5 JP2012510162 A5 JP 2012510162A5
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JP
Japan
Prior art keywords
substrate
passivation film
seed layer
via structure
solution
Prior art date
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Application number
JP2011537626A
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English (en)
Japanese (ja)
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JP5409801B2 (ja
JP2012510162A (ja
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Publication date
Priority claimed from US12/620,818 external-priority patent/US8293647B2/en
Application filed filed Critical
Publication of JP2012510162A publication Critical patent/JP2012510162A/ja
Publication of JP2012510162A5 publication Critical patent/JP2012510162A5/ja
Application granted granted Critical
Publication of JP5409801B2 publication Critical patent/JP5409801B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011537626A 2008-11-24 2009-11-19 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき Expired - Fee Related JP5409801B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11754008P 2008-11-24 2008-11-24
US61/117,540 2008-11-24
US12/620,818 2009-11-18
US12/620,818 US8293647B2 (en) 2008-11-24 2009-11-18 Bottom up plating by organic surface passivation and differential plating retardation
PCT/US2009/065193 WO2010059857A2 (en) 2008-11-24 2009-11-19 Bottom up plating by organic surface passivation and differential plating retardation

Publications (3)

Publication Number Publication Date
JP2012510162A JP2012510162A (ja) 2012-04-26
JP2012510162A5 true JP2012510162A5 (enExample) 2013-01-17
JP5409801B2 JP5409801B2 (ja) 2014-02-05

Family

ID=42196702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011537626A Expired - Fee Related JP5409801B2 (ja) 2008-11-24 2009-11-19 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき

Country Status (6)

Country Link
US (1) US8293647B2 (enExample)
JP (1) JP5409801B2 (enExample)
KR (1) KR101368308B1 (enExample)
CN (1) CN102224574B (enExample)
TW (1) TWI397616B (enExample)
WO (1) WO2010059857A2 (enExample)

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CN102798471B (zh) * 2011-10-19 2015-08-12 清华大学 一种红外探测器及其制备方法
US8754531B2 (en) * 2012-03-14 2014-06-17 Nanya Technology Corp. Through-silicon via with a non-continuous dielectric layer
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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CN104112697B (zh) * 2013-04-18 2017-09-15 中芯国际集成电路制造(上海)有限公司 一种改善铜填充质量的方法
JP6187008B2 (ja) * 2013-08-07 2017-08-30 大日本印刷株式会社 金属充填構造体の製造方法及び金属充填構造体
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US9349637B2 (en) * 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
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US9859124B2 (en) * 2015-04-17 2018-01-02 Taiwan Semiconductor Manufacturing Company Ltd Method of manufacturing semiconductor device with recess
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US10438847B2 (en) 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
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US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
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SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
KR102890997B1 (ko) * 2019-06-18 2025-11-25 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

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