JP2012508458A5 - - Google Patents

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Publication number
JP2012508458A5
JP2012508458A5 JP2011535002A JP2011535002A JP2012508458A5 JP 2012508458 A5 JP2012508458 A5 JP 2012508458A5 JP 2011535002 A JP2011535002 A JP 2011535002A JP 2011535002 A JP2011535002 A JP 2011535002A JP 2012508458 A5 JP2012508458 A5 JP 2012508458A5
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JP
Japan
Prior art keywords
dopant
functional layer
doped
doped functional
current
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JP2011535002A
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English (en)
Japanese (ja)
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JP2012508458A (ja
JP5951993B2 (ja
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Priority claimed from DE102008056371A external-priority patent/DE102008056371A1/de
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Publication of JP2012508458A publication Critical patent/JP2012508458A/ja
Publication of JP2012508458A5 publication Critical patent/JP2012508458A5/ja
Application granted granted Critical
Publication of JP5951993B2 publication Critical patent/JP5951993B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011535002A 2008-11-07 2009-10-12 オプトエレクトロニクス半導体チップを製造する方法 Expired - Fee Related JP5951993B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008056371.4 2008-11-07
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
PCT/DE2009/001415 WO2010051786A1 (de) 2008-11-07 2009-10-12 Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
JP2012508458A JP2012508458A (ja) 2012-04-05
JP2012508458A5 true JP2012508458A5 (https=) 2012-08-30
JP5951993B2 JP5951993B2 (ja) 2016-07-13

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ID=41667176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011535002A Expired - Fee Related JP5951993B2 (ja) 2008-11-07 2009-10-12 オプトエレクトロニクス半導体チップを製造する方法

Country Status (8)

Country Link
US (1) US8598596B2 (https=)
EP (1) EP2342762A1 (https=)
JP (1) JP5951993B2 (https=)
KR (1) KR20110088545A (https=)
CN (1) CN102210031B (https=)
DE (1) DE102008056371A1 (https=)
TW (1) TW201027806A (https=)
WO (1) WO2010051786A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431585B2 (en) 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
CN103184034B (zh) * 2013-01-04 2014-08-20 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂
JP6051901B2 (ja) * 2013-02-05 2016-12-27 豊田合成株式会社 ｐ型ＩＩＩ 族窒化物半導体の製造方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
KR102227981B1 (ko) * 2013-06-20 2021-03-16 삼성전자주식회사 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
EP3459117B1 (en) 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device
US10541352B2 (en) 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
CN110168752B (zh) * 2016-10-28 2022-02-22 亮锐有限责任公司 用于在紫外照射下生长发光器件的方法
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
WO2019152611A1 (en) * 2018-02-02 2019-08-08 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
TW329058B (en) 1997-03-20 1998-04-01 Ind Tech Res Inst Manufacturing method for P type gallium nitride
JPH11126758A (ja) 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP2001044209A (ja) 1999-07-27 2001-02-16 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置の製造方法
KR20020056566A (ko) * 2000-12-29 2002-07-10 조장연 질화 갈륨계 반도체 박막의 피형 활성화 방법
JP2002319703A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
DE10152922B4 (de) * 2001-10-26 2010-05-12 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
TW517403B (en) * 2002-01-10 2003-01-11 Epitech Technology Corp Nitride light emitting diode and manufacturing method for the same
TW540170B (en) * 2002-07-08 2003-07-01 Arima Optoelectronics Corp Ohmic contact structure of semiconductor light emitting device and its manufacturing method
JP2004128189A (ja) * 2002-10-02 2004-04-22 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体の製造方法
KR100580752B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100662191B1 (ko) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP5360789B2 (ja) 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 ｐ型酸化亜鉛薄膜及びその作製方法
KR100748709B1 (ko) * 2006-09-18 2007-08-13 서울옵토디바이스주식회사 발광 소자 및 그 제조 방법
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

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