JP2012507126A5 - - Google Patents

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Publication number
JP2012507126A5
JP2012507126A5 JP2011533610A JP2011533610A JP2012507126A5 JP 2012507126 A5 JP2012507126 A5 JP 2012507126A5 JP 2011533610 A JP2011533610 A JP 2011533610A JP 2011533610 A JP2011533610 A JP 2011533610A JP 2012507126 A5 JP2012507126 A5 JP 2012507126A5
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JP
Japan
Prior art keywords
electrode
plasma
vhf
gap
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011533610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012507126A (ja
Filing date
Publication date
Priority claimed from DE102009014414A external-priority patent/DE102009014414A1/de
Application filed filed Critical
Publication of JP2012507126A publication Critical patent/JP2012507126A/ja
Publication of JP2012507126A5 publication Critical patent/JP2012507126A5/ja
Pending legal-status Critical Current

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JP2011533610A 2008-10-29 2009-10-29 Ｖｈｆ装置 Pending JP2012507126A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102008053703 2008-10-29
DE102008053703.9 2008-10-29
DE102008054144.3 2008-10-31
DE102008054144 2008-10-31
DE102009014414A DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren
DE102009014414.5 2009-03-26
PCT/EP2009/007759 WO2010049158A2 (de) 2008-10-29 2009-10-29 Vhf-anordnung

Publications (2)

Publication Number Publication Date
JP2012507126A JP2012507126A (ja) 2012-03-22
JP2012507126A5 true JP2012507126A5 (ko) 2012-12-20

Family

ID=42096556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011533610A Pending JP2012507126A (ja) 2008-10-29 2009-10-29 Ｖｈｆ装置

Country Status (5)

Country Link
EP (1) EP2347427A2 (ko)
JP (1) JP2012507126A (ko)
DE (1) DE102009014414A1 (ko)
TW (1) TW201024453A (ko)
WO (1) WO2010049158A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11126775B2 (en) * 2019-04-12 2021-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. IC layout, method, device, and system
DE102020109326A1 (de) * 2019-04-12 2020-10-15 Taiwan Semiconductor Manufacturing Co. Ltd. Ic-vorrichtung, verfahren, layout und system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253122B2 (ja) * 1992-04-01 2002-02-04 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びにそれを用いた半導体デバイスの製造方法
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP3872741B2 (ja) 2002-10-01 2007-01-24 三菱重工業株式会社 プラズマ化学蒸着装置
JP4413084B2 (ja) 2003-07-30 2010-02-10 シャープ株式会社 プラズマプロセス装置及びそのクリーニング方法
JP3590955B2 (ja) * 2004-05-26 2004-11-17 村田 正義 平衡伝送回路と、該平衡伝送回路により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP4625397B2 (ja) * 2005-10-18 2011-02-02 三菱重工業株式会社 放電電極、薄膜製造装置及び太陽電池の製造方法
JP2008047938A (ja) 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

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