MX2009004065A - Metodo y aparato para fabricacion de sustratos limpiados o sustratos limpios que son procesados adicionalmente. - Google Patents

Metodo y aparato para fabricacion de sustratos limpiados o sustratos limpios que son procesados adicionalmente.

Info

Publication number
MX2009004065A
MX2009004065A MX2009004065A MX2009004065A MX2009004065A MX 2009004065 A MX2009004065 A MX 2009004065A MX 2009004065 A MX2009004065 A MX 2009004065A MX 2009004065 A MX2009004065 A MX 2009004065A MX 2009004065 A MX2009004065 A MX 2009004065A
Authority
MX
Mexico
Prior art keywords
substrates
further processed
clean
arrangement
anode
Prior art date
Application number
MX2009004065A
Other languages
English (en)
Inventor
Daniel Lendi
Siegfried Krassnitzer
Oliver Gstoehl
Original Assignee
Oerlikon Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag filed Critical Oerlikon Trading Ag
Publication of MX2009004065A publication Critical patent/MX2009004065A/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Se describe la limpieza con grabado al agua fuerte por plasma de sustratos realizada por medio de un dispositivo de descarga de plasma que comprende un cátodo de fuente de electrón (5) y una serie de ánodos (7). La serie de ánodos (7) comprende en una parte un electrodo de ánodo (9) y en otra parte un confinamiento (11) de la misma asilado de manera eléctrica. El confinamiento (11) tiene una abertura (13) dirigida hacia un área (S) de un sustrato (21) que será limpiado. El cátodo de fuente de electrón (5) y el electrodo de ánodo (9) se suministran de manera eléctrica mediante un circuito de suministro con una fuente de suministro (19). El circuito es operado de una manera eléctrica fluctuante.
MX2009004065A 2006-10-27 2006-10-27 Metodo y aparato para fabricacion de sustratos limpiados o sustratos limpios que son procesados adicionalmente. MX2009004065A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/067869 WO2008049463A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed

Publications (1)

Publication Number Publication Date
MX2009004065A true MX2009004065A (es) 2009-04-28

Family

ID=38169703

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009004065A MX2009004065A (es) 2006-10-27 2006-10-27 Metodo y aparato para fabricacion de sustratos limpiados o sustratos limpios que son procesados adicionalmente.

Country Status (13)

Country Link
US (1) US10418230B2 (es)
EP (2) EP2081700A1 (es)
JP (1) JP5184541B2 (es)
KR (1) KR101339501B1 (es)
CN (1) CN101528369B (es)
AU (1) AU2006349512B2 (es)
BR (1) BRPI0622083A2 (es)
CA (1) CA2664516A1 (es)
HU (1) HUE035964T2 (es)
MX (1) MX2009004065A (es)
PL (1) PL2158977T3 (es)
TW (1) TWI436412B (es)
WO (1) WO2008049463A1 (es)

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* Cited by examiner, † Cited by third party
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JP5627518B2 (ja) * 2011-03-16 2014-11-19 大日本スクリーン製造株式会社 基板処理装置および電源管理方法
JP5785528B2 (ja) * 2012-09-07 2015-09-30 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
EP3109034B1 (en) * 2015-06-24 2020-07-15 British Telecommunications public limited company Printed logic gate
US10490390B2 (en) * 2015-06-29 2019-11-26 Ulvac, Inc. Substrate processing device
CN105220115B (zh) * 2015-10-31 2018-06-26 华有光电（东莞）有限公司 一种对镀膜产品二次清洁的离子净化系统及其净化方法
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
WO2020126910A1 (en) * 2018-12-21 2020-06-25 Evatec Ag Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate
KR102274459B1 (ko) * 2019-12-27 2021-07-07 한국기계연구원 플라즈마 세정장치 및 이를 구비한 반도체 공정설비
RU2757458C1 (ru) * 2021-01-26 2021-10-18 Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" Способ управления холодной плазмой посредством микрорельефа на твёрдом диэлектрике

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GB521920A (en) * 1938-11-28 1940-06-04 Gen Electric Co Ltd Improvements in or relating to the protection of direct current electric supply systems
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
EP0583473B1 (en) 1991-04-29 1998-10-14 Scientific-Industrial Enterprise NOVATECH Method and device for treatment of articles in gas-discharge plasma
DE4125365C1 (es) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5302271A (en) * 1992-08-25 1994-04-12 Northeastern University Anodic vacuum arc deposition system
DE4228499C1 (de) 1992-09-01 1993-10-07 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
DE4306611B4 (de) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
JPH08107073A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd プラズマ処理装置、及びその洗浄方法
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
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CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
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Also Published As

Publication number Publication date
AU2006349512A1 (en) 2008-05-02
WO2008049463A1 (en) 2008-05-02
AU2006349512B2 (en) 2013-07-11
TWI436412B (zh) 2014-05-01
JP2010507239A (ja) 2010-03-04
CN101528369B (zh) 2013-03-20
CA2664516A1 (en) 2008-05-02
EP2081700A1 (en) 2009-07-29
KR20090091293A (ko) 2009-08-27
US20080099039A1 (en) 2008-05-01
JP5184541B2 (ja) 2013-04-17
TW200830390A (en) 2008-07-16
KR101339501B1 (ko) 2013-12-10
CN101528369A (zh) 2009-09-09
EP2158977B1 (en) 2017-05-17
HUE035964T2 (hu) 2018-06-28
US10418230B2 (en) 2019-09-17
EP2158977A1 (en) 2010-03-03
BRPI0622083A2 (pt) 2014-06-10
PL2158977T3 (pl) 2017-10-31

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