PL2158977T3 - Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane - Google Patents

Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane

Info

Publication number
PL2158977T3
PL2158977T3 PL09173793T PL09173793T PL2158977T3 PL 2158977 T3 PL2158977 T3 PL 2158977T3 PL 09173793 T PL09173793 T PL 09173793T PL 09173793 T PL09173793 T PL 09173793T PL 2158977 T3 PL2158977 T3 PL 2158977T3
Authority
PL
Poland
Prior art keywords
substrates
further processed
clean
manufacturing
manufacturing cleaned
Prior art date
Application number
PL09173793T
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Oliver Gstoehl
Daniel Lendi
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of PL2158977T3 publication Critical patent/PL2158977T3/pl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PL09173793T 2006-10-27 2006-10-27 Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane PL2158977T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06807618A EP2081700A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
PCT/EP2006/067869 WO2008049463A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
EP09173793.2A EP2158977B1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed

Publications (1)

Publication Number Publication Date
PL2158977T3 true PL2158977T3 (pl) 2017-10-31

Family

ID=38169703

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09173793T PL2158977T3 (pl) 2006-10-27 2006-10-27 Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane

Country Status (13)

Country Link
US (1) US10418230B2 (pl)
EP (2) EP2158977B1 (pl)
JP (1) JP5184541B2 (pl)
KR (1) KR101339501B1 (pl)
CN (1) CN101528369B (pl)
AU (1) AU2006349512B2 (pl)
BR (1) BRPI0622083A2 (pl)
CA (1) CA2664516A1 (pl)
HU (1) HUE035964T2 (pl)
MX (1) MX2009004065A (pl)
PL (1) PL2158977T3 (pl)
TW (1) TWI436412B (pl)
WO (1) WO2008049463A1 (pl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5627518B2 (ja) * 2011-03-16 2014-11-19 大日本スクリーン製造株式会社 基板処理装置および電源管理方法
JP5785528B2 (ja) * 2012-09-07 2015-09-30 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
EP3109034B1 (en) * 2015-06-24 2020-07-15 British Telecommunications public limited company Printed logic gate
CN107109618B (zh) * 2015-06-29 2019-10-22 株式会社爱发科 基板处理装置
CN105220115B (zh) * 2015-10-31 2018-06-26 华有光电（东莞）有限公司 一种对镀膜产品二次清洁的离子净化系统及其净化方法
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
KR20210099153A (ko) * 2018-12-21 2021-08-11 에바텍 아크티엔게젤샤프트 하나 이상의 기판을 진공 플라즈마 처리하거나 기판을 제조하기 위한 진공 처리 장치 및 방법
KR102274459B1 (ko) 2019-12-27 2021-07-07 한국기계연구원 플라즈마 세정장치 및 이를 구비한 반도체 공정설비
RU2757458C1 (ru) * 2021-01-26 2021-10-18 Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" Способ управления холодной плазмой посредством микрорельефа на твёрдом диэлектрике

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB521920A (en) * 1938-11-28 1940-06-04 Gen Electric Co Ltd Improvements in or relating to the protection of direct current electric supply systems
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
DE69227313T2 (de) 1991-04-29 1999-04-08 Scient Ind Enterprise Novatech Verfahren und vorrichtung zur behandlung von bauteilen in einem gasentladungsplasma
DE4125365C1 (pl) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5302271A (en) * 1992-08-25 1994-04-12 Northeastern University Anodic vacuum arc deposition system
DE4228499C1 (de) * 1992-09-01 1993-10-07 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
DE4306611B4 (de) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
JPH08107073A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd プラズマ処理装置、及びその洗浄方法
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
RU2094896C1 (ru) * 1996-03-25 1997-10-27 Научно-производственное предприятие "Новатех" Источник быстрых нейтральных молекул
US5754581A (en) * 1996-11-18 1998-05-19 Mclellan; Edward J. Differential impedance discharge for plasma generation
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
CN1249786C (zh) * 2000-04-25 2006-04-05 东京电子株式会社 用于工件的等离子体清洗的方法和装置
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
US6444103B1 (en) * 2000-09-15 2002-09-03 Cvc Products, Inc. Method and apparatus for thin film deposition using an active shutter
JP2002143795A (ja) 2000-11-14 2002-05-21 Sekisui Chem Co Ltd 液晶用ガラス基板の洗浄方法
WO2004003968A2 (en) * 2002-06-28 2004-01-08 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US20050061444A1 (en) * 2003-09-24 2005-03-24 Yoshiaki Noda Plasma cleaning device

Also Published As

Publication number Publication date
US20080099039A1 (en) 2008-05-01
JP5184541B2 (ja) 2013-04-17
US10418230B2 (en) 2019-09-17
AU2006349512A1 (en) 2008-05-02
BRPI0622083A2 (pt) 2014-06-10
EP2158977A1 (en) 2010-03-03
JP2010507239A (ja) 2010-03-04
AU2006349512B2 (en) 2013-07-11
TWI436412B (zh) 2014-05-01
TW200830390A (en) 2008-07-16
EP2081700A1 (en) 2009-07-29
WO2008049463A1 (en) 2008-05-02
KR101339501B1 (ko) 2013-12-10
KR20090091293A (ko) 2009-08-27
CN101528369B (zh) 2013-03-20
CA2664516A1 (en) 2008-05-02
CN101528369A (zh) 2009-09-09
MX2009004065A (es) 2009-04-28
HUE035964T2 (hu) 2018-06-28
EP2158977B1 (en) 2017-05-17

Similar Documents

Publication Publication Date Title
HUE035964T2 (hu) Eljárás és berendezés további kezelésre kerülõ, tisztított szubsztrátok vagy tiszta szubsztrátok gyártására
EP2220670A4 (en) METHOD AND DEVICE FOR REMOVING CONTAMINATION FROM A SUBSTRATE
HK1119485A1 (en) Apparatus for removing foreign material from substrate and method for removing foreign material from substrate
TWI367401B (en) Lithographic apparatus and lithographic apparatus cleaning method
EP2229243A4 (en) METHOD AND COMPOSITION FOR CLEANING DISCS
TWI370508B (en) Substrate processing apparatus and substrate processing method
EP2178655A4 (en) DEVICE AND METHOD FOR INDIRECT SURFACE CLEANING
TWI368267B (en) Method and apparatus for cleaning a substrate surface
EP2120666A4 (en) STAUBSAUGVERFAHREN
EP1848551A4 (en) IMPROVED WAFER CLEANING METHOD
GB0610578D0 (en) Method of removing deposits
EP1995771A4 (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
IL189343A0 (en) Method and apparatus for automated cleaning of bottling equipment
TWI369725B (en) Substrate cleaning method
EP2177278A4 (en) SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD
EP2114547A4 (en) METHOD AND SYSTEM FOR CLEANING FILTERS
GB0506033D0 (en) Apparatus and method for thermally removing coatings and/or impurities
GB0723274D0 (en) Method and apparatus for manufacturing workpieces
HK1122473A1 (en) Manufacturing method and manufacturing apparatus for baumkuchen
EP2051288A4 (en) GaxIn1 xN SUBSTRATE AND CLEANING PROCEDURE FOR A GaxIn1 xN SUBSTRATE
TWI372661B (en) Cleaning apparatus and cleaning method
TWI368265B (en) Wafer cleaning apparatus and correcting method of the same
TWI346973B (en) Substrate processing apparatus and substrate processing method
EP2083304A4 (en) MICROSCOPE AND METHOD FOR TREATING DUST FOR MICROSCOPE
GB2442869B (en) Method and means for cleaning pipelines