PL2158977T3 - Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane - Google Patents

Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane

Info

Publication number
PL2158977T3
PL2158977T3 PL09173793T PL09173793T PL2158977T3 PL 2158977 T3 PL2158977 T3 PL 2158977T3 PL 09173793 T PL09173793 T PL 09173793T PL 09173793 T PL09173793 T PL 09173793T PL 2158977 T3 PL2158977 T3 PL 2158977T3
Authority
PL
Poland
Prior art keywords
substrates
further processed
clean
manufacturing
manufacturing cleaned
Prior art date
Application number
PL09173793T
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Oliver Gstoehl
Daniel Lendi
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of PL2158977T3 publication Critical patent/PL2158977T3/pl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)
PL09173793T 2006-10-27 2006-10-27 Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane PL2158977T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06807618A EP2081700A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
PCT/EP2006/067869 WO2008049463A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
EP09173793.2A EP2158977B1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed

Publications (1)

Publication Number Publication Date
PL2158977T3 true PL2158977T3 (pl) 2017-10-31

Family

ID=38169703

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09173793T PL2158977T3 (pl) 2006-10-27 2006-10-27 Sposób i urządzenie do wytwarzania oczyszczonych podłoży lub czystych podłoży, które są dodatkowo obrabiane

Country Status (13)

Country Link
US (1) US10418230B2 (pl)
EP (2) EP2158977B1 (pl)
JP (1) JP5184541B2 (pl)
KR (1) KR101339501B1 (pl)
CN (1) CN101528369B (pl)
AU (1) AU2006349512B2 (pl)
BR (1) BRPI0622083A2 (pl)
CA (1) CA2664516A1 (pl)
HU (1) HUE035964T2 (pl)
MX (1) MX2009004065A (pl)
PL (1) PL2158977T3 (pl)
TW (1) TWI436412B (pl)
WO (1) WO2008049463A1 (pl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5627518B2 (ja) * 2011-03-16 2014-11-19 大日本スクリーン製造株式会社 基板処理装置および電源管理方法
JP5785528B2 (ja) * 2012-09-07 2015-09-30 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
EP3109034B1 (en) * 2015-06-24 2020-07-15 British Telecommunications public limited company Printed logic gate
JP6483259B2 (ja) * 2015-06-29 2019-03-13 株式会社アルバック 基板処理装置
CN105220115B (zh) * 2015-10-31 2018-06-26 华有光电（东莞）有限公司 一种对镀膜产品二次清洁的离子净化系统及其净化方法
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
CH715878A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CN113169025A (zh) * 2018-12-21 2021-07-23 瑞士艾发科技 用于真空等离子体处理至少一个衬底或用于制造衬底的真空处理设备和方法
CH715877A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Vakuumkammer mit Elektrodenanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
KR102274459B1 (ko) 2019-12-27 2021-07-07 한국기계연구원 플라즈마 세정장치 및 이를 구비한 반도체 공정설비
RU2757458C1 (ru) * 2021-01-26 2021-10-18 Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" Способ управления холодной плазмой посредством микрорельефа на твёрдом диэлектрике

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GB521920A (en) * 1938-11-28 1940-06-04 Gen Electric Co Ltd Improvements in or relating to the protection of direct current electric supply systems
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
DE69227313T2 (de) 1991-04-29 1999-04-08 Scientific-Industrial Enterprise Novatech, Moscow Verfahren und vorrichtung zur behandlung von bauteilen in einem gasentladungsplasma
DE4125365C1 (pl) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5302271A (en) * 1992-08-25 1994-04-12 Northeastern University Anodic vacuum arc deposition system
DE4228499C1 (de) 1992-09-01 1993-10-07 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
DE4306611B4 (de) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
JPH08107073A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd プラズマ処理装置、及びその洗浄方法
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RU2094896C1 (ru) * 1996-03-25 1997-10-27 Научно-производственное предприятие "Новатех" Источник быстрых нейтральных молекул
US5754581A (en) * 1996-11-18 1998-05-19 Mclellan; Edward J. Differential impedance discharge for plasma generation
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
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WO2001082355A2 (en) * 2000-04-25 2001-11-01 Tokyo Electron Limited Method and apparatus for plasma cleaning of workpieces
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
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JP2002143795A (ja) 2000-11-14 2002-05-21 Sekisui Chem Co Ltd 液晶用ガラス基板の洗浄方法
JP2006507662A (ja) * 2002-06-28 2006-03-02 東京エレクトロン株式会社 プラズマ処理システム内のアーク抑制方法およびシステム
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US20050061444A1 (en) * 2003-09-24 2005-03-24 Yoshiaki Noda Plasma cleaning device

Also Published As

Publication number Publication date
JP5184541B2 (ja) 2013-04-17
CN101528369B (zh) 2013-03-20
TW200830390A (en) 2008-07-16
MX2009004065A (es) 2009-04-28
US10418230B2 (en) 2019-09-17
KR20090091293A (ko) 2009-08-27
EP2158977A1 (en) 2010-03-03
US20080099039A1 (en) 2008-05-01
EP2158977B1 (en) 2017-05-17
CN101528369A (zh) 2009-09-09
AU2006349512A1 (en) 2008-05-02
JP2010507239A (ja) 2010-03-04
KR101339501B1 (ko) 2013-12-10
CA2664516A1 (en) 2008-05-02
EP2081700A1 (en) 2009-07-29
AU2006349512B2 (en) 2013-07-11
HUE035964T2 (hu) 2018-06-28
WO2008049463A1 (en) 2008-05-02
TWI436412B (zh) 2014-05-01
BRPI0622083A2 (pt) 2014-06-10

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