TW200704315A - Plating apparatus, plating method, and method for manufacturing semiconductor device - Google Patents

Plating apparatus, plating method, and method for manufacturing semiconductor device

Info

Publication number
TW200704315A
TW200704315A TW095112566A TW95112566A TW200704315A TW 200704315 A TW200704315 A TW 200704315A TW 095112566 A TW095112566 A TW 095112566A TW 95112566 A TW95112566 A TW 95112566A TW 200704315 A TW200704315 A TW 200704315A
Authority
TW
Taiwan
Prior art keywords
plating
anode electrode
semiconductor wafer
tank
semiconductor device
Prior art date
Application number
TW095112566A
Other languages
Chinese (zh)
Other versions
TWI300317B (en
Inventor
Yoshihide Iwazaki
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200704315A publication Critical patent/TW200704315A/en
Application granted granted Critical
Publication of TWI300317B publication Critical patent/TWI300317B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008—Current shielding devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A plating apparatus according to the present invention is provided with a plating tank 100 in which an anode electrode 5 is provided, the plating apparatus performing the plating by (i) streaming a plating solution and an electrolytic liquid into the plating tank 100, (ii) emitting a jet of the plating solution to the plating-target face W of the semiconductor wafer 1 from the underneath of the semiconductor wafer 1, and (iii) streaming the electrolytic liquid to the anode electrode 5 while electrically conducting between the semiconductor wafer 1 and the anode electrode 5, the plating tank including a partition in between the semiconductor wafer 1 and the anode electrode 5, and the partition (i) separating the semiconductor wafer 1 and the anode electrode 5 and (ii) dividing the plating tank 100 into a plating-target substrate room and an anode electrode room. Thus, in a face-down type fountain plating apparatus, the plating quality would not be degraded by micro foreign solid particles originated from, for example, a black film while maintaining the operability of the apparatus.
TW095112566A 2005-04-08 2006-04-07 Plating apparatus, plating method, and method for manufacturing semiconductor device TWI300317B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005112888 2005-04-08
JP2005202283A JP2006312775A (en) 2005-04-08 2005-07-11 Plating apparatus, plating method, and method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
TW200704315A true TW200704315A (en) 2007-01-16
TWI300317B TWI300317B (en) 2008-08-21

Family

ID=37082141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112566A TWI300317B (en) 2005-04-08 2006-04-07 Plating apparatus, plating method, and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20060226018A1 (en)
JP (1) JP2006312775A (en)
KR (1) KR100756160B1 (en)
TW (1) TWI300317B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112708910A (en) * 2019-10-25 2021-04-27 联芯集成电路制造(厦门)有限公司 Electrochemical plating method

Families Citing this family (25)

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US8012319B2 (en) * 2007-11-21 2011-09-06 Texas Instruments Incorporated Multi-chambered metal electrodeposition system for semiconductor substrates
EP2085503A1 (en) * 2008-01-31 2009-08-05 HDO -Druckguss- und Oberflächentechnik GmbH Method and device for producing components
US8145749B2 (en) * 2008-08-11 2012-03-27 International Business Machines Corporation Data processing in a hybrid computing environment
US8141102B2 (en) * 2008-09-04 2012-03-20 International Business Machines Corporation Data processing in a hybrid computing environment
US7984267B2 (en) * 2008-09-04 2011-07-19 International Business Machines Corporation Message passing module in hybrid computing system starting and sending operation information to service program for accelerator to execute application program
US8230442B2 (en) * 2008-09-05 2012-07-24 International Business Machines Corporation Executing an accelerator application program in a hybrid computing environment
US8527734B2 (en) * 2009-01-23 2013-09-03 International Business Machines Corporation Administering registered virtual addresses in a hybrid computing environment including maintaining a watch list of currently registered virtual addresses by an operating system
US9286232B2 (en) * 2009-01-26 2016-03-15 International Business Machines Corporation Administering registered virtual addresses in a hybrid computing environment including maintaining a cache of ranges of currently registered virtual addresses
US8843880B2 (en) * 2009-01-27 2014-09-23 International Business Machines Corporation Software development for a hybrid computing environment
US8255909B2 (en) * 2009-01-28 2012-08-28 International Business Machines Corporation Synchronizing access to resources in a hybrid computing environment
US9170864B2 (en) * 2009-01-29 2015-10-27 International Business Machines Corporation Data processing in a hybrid computing environment
US8001206B2 (en) * 2009-01-29 2011-08-16 International Business Machines Corporation Broadcasting data in a hybrid computing environment
US20100191923A1 (en) * 2009-01-29 2010-07-29 International Business Machines Corporation Data Processing In A Computing Environment
US8010718B2 (en) * 2009-02-03 2011-08-30 International Business Machines Corporation Direct memory access in a hybrid computing environment
US8037217B2 (en) * 2009-04-23 2011-10-11 International Business Machines Corporation Direct memory access in a hybrid computing environment
US8180972B2 (en) * 2009-08-07 2012-05-15 International Business Machines Corporation Reducing remote reads of memory in a hybrid computing environment by maintaining remote memory values locally
US9417905B2 (en) * 2010-02-03 2016-08-16 International Business Machines Corporation Terminating an accelerator application program in a hybrid computing environment
US8578132B2 (en) * 2010-03-29 2013-11-05 International Business Machines Corporation Direct injection of data to be transferred in a hybrid computing environment
TW201213622A (en) * 2010-09-27 2012-04-01 Pin-Chun Huang Device and method for electroplating thin board
CN104032340B (en) * 2013-03-06 2018-02-06 中国人民解放军装甲兵工程学院 Metallic element Brush Plating system and method
KR101622527B1 (en) 2015-07-22 2016-05-18 딥솔 가부시키가이샤 Zinc alloy plating method
CN105586630A (en) * 2015-12-23 2016-05-18 南通富士通微电子股份有限公司 Method for improving quality of black film of copper and phosphorus anode in semiconductor packaging
US11280021B2 (en) 2018-04-19 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of controlling chemical concentration in electrolyte and semiconductor apparatus
JP7500318B2 (en) * 2020-03-23 2024-06-17 キオクシア株式会社 Anodizing Equipment
US11401624B2 (en) * 2020-07-22 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Plating apparatus and method for electroplating wafer

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2908790B1 (en) * 1998-06-12 1999-06-21 日本エレクトロプレイテイング・エンジニヤース株式会社 Cup type plating apparatus and wafer plating method using the same
KR100683268B1 (en) * 1998-09-08 2007-02-15 가부시키가이샤 에바라 세이사꾸쇼 Substrate plating device
TW497143B (en) * 1999-07-08 2002-08-01 Ebara Corp Plating device, plating method and equipment for plating process
JP3367655B2 (en) * 1999-12-24 2003-01-14 島田理化工業株式会社 Plating apparatus and plating method
US6398926B1 (en) * 2000-05-31 2002-06-04 Techpoint Pacific Singapore Pte Ltd. Electroplating apparatus and method of using the same
JP2002173794A (en) * 2000-12-05 2002-06-21 Electroplating Eng Of Japan Co Cup type plating apparatus
US6881319B2 (en) * 2000-12-20 2005-04-19 Shipley Company, L.L.C. Electrolytic copper plating solution and method for controlling the same
JP3821742B2 (en) * 2002-03-26 2006-09-13 Ｎｅｃエレクトロニクス株式会社 Plating apparatus and plating solution management method using the same
JP3819840B2 (en) * 2002-07-17 2006-09-13 大日本スクリーン製造株式会社 Plating apparatus and plating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112708910A (en) * 2019-10-25 2021-04-27 联芯集成电路制造(厦门)有限公司 Electrochemical plating method
CN112708910B (en) * 2019-10-25 2021-11-23 联芯集成电路制造(厦门)有限公司 Electrochemical plating method

Also Published As

Publication number Publication date
TWI300317B (en) 2008-08-21
US20060226018A1 (en) 2006-10-12
KR100756160B1 (en) 2007-09-05
JP2006312775A (en) 2006-11-16
KR20060107399A (en) 2006-10-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees