KR20060107399A - Plating apparatus, plating method, and method for manufacturing semiconductor device - Google Patents

Abstract

The plating apparatus of the present invention includes a plating treatment tank 100 in which an anode electrode 5 is formed therein, a plating solution and an electrolyte are introduced into the plating treatment tank 100, and the plating surface of the semiconductor wafer 1 ( A plating apparatus in which plating is performed by energizing an electrolyte between the anode electrode 5 and the semiconductor wafer 1 while injecting an electrolyte solution into the anode electrode 5 while contacting W) from the lower side. A partition wall 7 is formed between the semiconductor wafer 1 and the anode electrode 5 in the plating processing tank 100, and the semiconductor wafer 1 and the anode electrode 5 are separated by the partition wall 7. The plating bath 100 is divided into a substrate chamber to be plated and an anode electrode chamber. Thereby, in the face down type | mold plating apparatus, it becomes possible to prevent the fall of plating quality by the micro solid foreign material resulting from a black film etc., without impairing operability.

Semiconductor wafer, metal plating, wiring, anode electrode, electrolyte

Description

Plating apparatus, plating method, and manufacturing method of semiconductor device {PLATING APPARATUS, PLATING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE}

1 is a cross-sectional view showing a schematic configuration of a plating treatment tank formed in a plating apparatus according to an embodiment of the present invention.

2 is a cross-sectional view showing an example of the configuration of a wafer holder of the plating treatment tank.

3 shows the configuration of a region surrounded by an inner cylinder and a partition wall in the plating treatment tank, an upper view is a top view seen from the surface to be plated of a semiconductor wafer, and a lower view is a sectional view.

4 is an explanatory diagram for explaining the structure of an ion exchange membrane;

5 is an explanatory diagram for explaining selective permeability of an ion exchange membrane.

6 is a schematic diagram showing a configuration of a plating apparatus according to an embodiment of the present invention.

7 is a schematic diagram showing a schematic configuration of a semiconductor wafer.

8A is a plan view showing a schematic configuration of a semiconductor chip formed on a semiconductor wafer after a plating step;

8B is a sectional view showing a schematic configuration of a semiconductor chip formed on a semiconductor wafer after a plating step;

9 is a sectional view showing a schematic configuration of a plating treatment tank formed in a plating apparatus according to another embodiment of the present invention.

10 is a schematic diagram showing a configuration of a plating apparatus according to another embodiment of the present invention.

Fig. 11 is a sectional view showing a schematic configuration of a conventional face down plating jet plating apparatus.

12 is a cross-sectional view showing a schematic configuration of a conventional rack type vertical plating apparatus.

Fig. 13A is a sectional view showing a procedure of the method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip before the seed layer forming step.

FIG. 13B is a sectional view showing a procedure of a method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the seed layer forming step; FIG.

Fig. 13C is a sectional view showing a procedure of the method of manufacturing the semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the photoresist coating step.

FIG. 13D is a sectional view showing a procedure of a method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the photoresist pattern forming step; FIG.

Fig. 13E is a cross sectional view showing a procedure of a method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the plating step;

Fig. 13F is a sectional view showing a procedure of the method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the peeling process.

Fig. 13G is a sectional view showing a procedure of a method of manufacturing a semiconductor wafer in the present embodiment, showing a schematic configuration of a part of the semiconductor chip after the etching step.

Fig. 14A is a sectional view showing an external connection terminal installation step of providing an external connection terminal on a semiconductor wafer on which a wiring plating layer is formed, showing a schematic configuration of a part of the semiconductor chip in which the wiring plating layer is formed before the overcoating layer forming step.

Fig. 14B is a sectional view showing the external connection terminal installation step of providing the external connection terminal on the semiconductor wafer on which the wiring plating layer is formed, showing a schematic configuration of a part of the semiconductor chip after the overcoating layer formation step.

Fig. 14C is a sectional view showing the external connection terminal installation step of providing the external connection terminal on the semiconductor wafer on which the wiring plating layer is formed, showing a schematic configuration of a part of the semiconductor chip after the overcoating layer pattern formation step.

Fig. 14D is a sectional view showing the external connection terminal installation step of providing the external connection terminal on the semiconductor wafer on which the wiring plating layer is formed, showing a schematic configuration of a part of the semiconductor chip after the external connection terminal formation step.

<Explanation of symbols for the main parts of the drawings>

1: semiconductor wafer (plated substrate)

2: wafer holder

3: cup

4: plating liquid supply nozzle

5: anode electrode

6: holder

7: bulkhead

8: electrolyte supply pipe

10: return tube

31: inner tube

32: outer cylinder

W: plated surface

100: plating treatment tank

[Patent Document 1] Japanese Patent Application Laid-Open No. 2000-87299 (published March 28, 2000)

[Patent Document 2] Japanese Patent Application Laid-Open No. 2001-49498 (published February 20, 2001)

[Patent Document 3] Japanese Patent Application Laid-Open No. 2001-24307 (published January 26, 2001)

[Patent Document 4] Japanese Patent Publication No. 2003-73889 (published March 12, 2003)

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a plating apparatus, a plating method, and a manufacturing method of a semiconductor device which are excellent in forming fine plating for wiring on a surface to be plated such as a semiconductor wafer.

At present, the method by metal plating is employ | adopted in order to form wiring in a semiconductor wafer etc. As a device used for the conventional metal plating, a face down flow type plating device, a rack type vertical plating device, or a face up type flow plating device are known.

As shown in FIG. 11, the face-down type plating apparatus uses a wafer holder 2 'for holding the semiconductor wafer 1', a cup 3 ', and a plating solution in the cup 3'. A plating liquid injection tube 4 'and a positive electrode 5' for supplying are provided. The anode electrode 5 'is generally made of phosphorus-containing copper. An anode electrode 5 'is formed inside the cup 3'. A wafer holder 2 'is formed in the cup 3', and the semiconductor wafer 1 'is held above the cup 3' by the wafer holder 2 '. In the face-down type plating apparatus, the plating liquid injection pipe 4 'is formed below the semiconductor wafer 1'. For this reason, the plating liquid injected from the plating liquid injection tube 4 'is supplied from below the semiconductor wafer 1'. Thereby, plating of a to-be-plated surface is performed.

In addition, although not shown in FIG. 11, the face-down type plating apparatus includes a plating liquid tank formed to contain the cup 3 ', a plating liquid reservoir as a plating liquid supply source, a pump for circulating the plating liquid into the plating apparatus, and solid foreign matter in the plating liquid. A filter to filter and the piping which connects these are provided.

In the face-down type plating apparatus, the plating liquid in the plating liquid reservoir reaches the lower portion of the cup 3 'through a filter by a pump. The plating liquid supplied from the lower portion of the cup 3 'passes through the plating liquid injection tube 4' and reaches the plated surface of the semiconductor wafer 1 via the anode electrode 5 '. After that, the plating liquid leaks out of the cup 3 'from the edge portion of the upper portion of the cup 3' (the gap between the wafer holder 2 'and the cup 3'), and the plating liquid is released. It is recovered from the tank and returned to the plating liquid reservoir again.

In the face-down type plating apparatus, a "outlet for allowing a part of the plating liquid introduced into the plating treatment tank to flow out of the plating treatment tank from the periphery of the through hole formed in the anode electrode or the anode electrode is formed. Moreover, the plating apparatus which applied the insoluble electrode represented by platinum as a positive electrode is also known.

In addition, the rack type vertical plating apparatus is provided with the anode electrode 6 ", the rack 24, and the plating process tank 12 as shown in FIG. 12. The anode electrode 6". Is usually installed in the anode bag 13, the inside of which is a brushed fabric. As the anode electrode 6 ″, a spherical phosphorus-containing copper is placed in a titanium basket, or a copper plate made of phosphorus-containing copper is used. The rack 24 is attached to the semiconductor wafer 1. It is a plate-shaped jig provided with a feed part and having a hole whose internal diameter is slightly smaller than the semiconductor wafer 1. And the plating process tank 12 is the fixing of the semiconductor wafer 1 to the rack 24, and the back surface. And a squeegee (not shown) for stirring the plating liquid, which serves as an insulating layer.

In addition, although not shown in FIG. 12, the rack type vertical plating apparatus includes a plating liquid tank, a plating liquid reservoir as a plating liquid supply source, a pump for circulating the plating liquid into the plating apparatus, a filter for filtering solid foreign substances in the plating liquid, a pipe connecting them, and The accessory is provided.

The plating liquid reaches the inlet 14 through a filter by a pump from the reservoir. And in the plating process tank 12, the vicinity of the anode bag 13 which contains the anode electrode 6 flows. Thereafter, the surface to be plated on the surface of the semiconductor wafer 1 is reached, flows out from the upper edge of the plating treatment tank 12 to the dam 15, and is returned to the plating liquid reservoir via an unshown return tube formed in a part of the dam. The vertical plating apparatus of such a rack system is disclosed by patent document 1, for example.

In addition, the face-up type plating apparatus is configured so that the surface to be plated of the semiconductor wafer is disposed upward, and the anode electrode is disposed to face the surface to be plated, so that the plating liquid is supplied from above the semiconductor wafer. The sorting plating apparatus of such a face up system is disclosed by patent document 2 and patent document 3, for example.

In the face-down type plating apparatus, a small solid foreign matter adheres to the surface to be plated, causing a problem of deterioration in plating quality. This cause is located on the surface of the anode electrode in the path from which the plating liquid supplied from the plating liquid reservoir by the pump is filtered by the filter and then supplied from the bottom of the cup to the plated surface of the semiconductor wafer through the vicinity of the anode electrode. When the anode electrode contains phosphorus-containing copper, a black film called a black film is formed on the surface thereof. This black film consists of a monovalent copper complex (Cu ⁺ ) containing chlorine (Cl) or phosphorus (P), and is the result of compounding with monovalent copper ions generated by anode dissolution.

This black film has the effect of suppressing generation of slime by suppressing the disproportionation reaction of copper represented by following formula (1).

On the other hand, however, the black film once formed easily peels off from the surface of the anode electrode. The peeled fine black film is conveyed to the to-be-plated surface of a semiconductor wafer with the flow of a plating liquid. As a result, the problem that a black film adheres to the plating surface of a semiconductor wafer arises.

Moreover, it is possible to prevent the problem by the said black film by applying an insoluble electrode as an anode electrode. However, in this case, a problem arises that, on the surface of the anode electrode, the additive in the plating liquid is oxidatively decomposed to increase the consumption of the plating liquid, or the plating liquid is contaminated by decomposition products generated by oxidative decomposition.

On the other hand, in the conventional rack type vertical plating apparatus, since the anode electrode containing phosphorus-containing copper is provided in the anode bag which is a raised fabric inside, it is made to the semiconductor wafer by the solid foreign material resulting from a black film. Attachment can be prevented. However, in such a vertical plating apparatus, in order to hold a semiconductor wafer in a plating process tank, the operation of fixing a semiconductor wafer to a rack is required. For this reason, the problem of the fall of productivity by this operation, the fall of plating quality, and the interruption of automation arises.

Moreover, in the face-up type | mold plating apparatus disclosed by patent document 3, an ion exchange resin or a porous neutral film is formed in the bottom part of an anode chamber in order to prevent peeling by drying of a black film, and an anode The inside of the room is filled with the plating liquid. Moreover, in the face-up type | mold classification system apparatus disclosed by patent document 4, the porous body in which the many microholes were formed in the bottom part of the anode chamber is formed.

Moreover, as a thing different from the above-mentioned plating apparatus, For example, patent document 4 isolate | separates a plating process tank into an anode chamber and an anode chamber with an anion exchange membrane, and performs the electro-copper plating of an insoluble electrode as an anode. An electrocopper plating apparatus is disclosed. In addition, in the plating apparatus described in Patent Document 4, the negative electrode chamber and the positive electrode chamber are separated by an anion exchange membrane, and independent catholyte and anolyte solutions are used for the negative electrode chamber and the positive electrode chamber, respectively.

Among the above conventional plating apparatuses, no plating apparatus capable of preventing contamination of a plating liquid by minute solid foreign substances due to a black film or the like is not provided with respect to the plating apparatus of the face down method.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to prevent deterioration in plating quality due to a fine solid foreign matter due to a black film or the like, without impairing operability in a face down type jet plating apparatus. A plating apparatus, a plating method, and a manufacturing method of a semiconductor device are provided.

In order to solve the above problems, the plating apparatus of the present invention is a plating apparatus for plating a surface to be plated of a plating substrate, the plating apparatus including a plating treatment tank having an anode electrode formed therein, and the plating solution and the electrolytic solution in the plating treatment tank. Flows into the surface of the plated substrate to contact the surface of the plated solution from the lower side, and conducts plating by energizing the anode electrode and the plated substrate while flowing an electrolyte solution into the anode electrode. In the bath, a partition is formed between the plated substrate and the anode electrode, the anode electrode and the plated substrate are separated by the partition wall, and the plating treatment tank is divided into a plated substrate chamber and an anode electrode chamber. It is done.

The plating apparatus of this invention performs a plating process by flowing a plating liquid and electrolyte solution into a plating process tank, and energizing an anode electrode and a to-be-plated board | substrate. In the plating apparatus of the present invention, a face-up method is adopted in which the classification of the plating liquid is brought into contact with the surface to be plated of the substrate to be plated from the lower side. In addition, the electrolyte solution flows into the positive electrode.

The "plated substrate chamber" refers to a space including the substrate to be plated in the space separated by the partition wall. In addition, the "anode electrode chamber" means a space including the anode electrode in the space isolated by the partition wall.

Further, according to the above constitution, since the anode electrode and the plated substrate are separated by the partition wall, and the plating treatment tank is divided into the plated substrate chamber and the anode electrode chamber, contamination of the plated surface by particles or the like caused by the anode electrode is contaminated. Can be prevented.

As mentioned above, according to the said structure, the plating apparatus which can prevent the fall of plating quality by the minute solid foreign material resulting from a black film etc. can be provided, without impairing operability. In addition, it is possible to obtain a high-density and high-precision semiconductor device having high quality plated wiring.

In addition, in the plating apparatus of the present invention, "the plating surface of the substrate to be plated is brought into contact with the plating liquid from the lower side, while the electrolyte is introduced into the anode electrode while the current flows between the anode electrode and the substrate to be plated. As a constitution, for example, a plating liquid injection tube for injecting a plating liquid onto the surface to be plated of the substrate to be plated is further provided, and the plating liquid injection tube penetrates through the partition wall and is formed only in the substrate to be plated. The structure which is formed so that a plating liquid flows is illustrated.

As a result, the plating liquid can be brought into contact with the surface to be plated of the substrate to be plated from below.

Moreover, the structure provided with the electrolyte supply pipe for introducing the said electrolyte solution only in the said anode electrode chamber is illustrated. Thereby, it becomes possible to introduce electrolyte solution into an anode electrode.

Moreover, generally, various additives are added to the plating liquid used for plating process. These additives can be broadly divided into materials acting on the surface to be plated of the substrate to be plated and materials acting on the surface of the anode electrode. Among these, the substance acting on the surface to be plated of the substrate to be subjected to decomposition reactions and the like on the surface of the anode electrode, to generate a reaction product, adversely affect the plating reaction. The "electrolyte" refers to a solution that does not contain a substance acting on the surface to be plated of the substrate to be plated. In the above configuration, the electrolyte solution flows into the anode electrode chamber, the plating liquid flows into the substrate chamber to be plated, and the anode electrode chamber and the substrate substrate chamber are separated by a partition wall, so that the decomposition reaction does not occur on the surface of the anode electrode and the plating is performed. It does not adversely affect the reaction.

In order to solve the said subject, the manufacturing method of the semiconductor device of this invention was characterized by using the above-mentioned plating apparatus.

Thereby, it becomes possible to obtain the semiconductor device provided with the high quality plating wiring, without adhering the minute solid foreign material resulting from the black film etc. of the anode electrode surface.

In addition, the plating method of the present invention is a plating method for plating the plated surface of the plated substrate in order to solve the above problems, the plating solution and the electrolyte is introduced into the plating treatment tank, and the plating method is lowered to the plated surface of the plated substrate While the plating solution is brought into contact with each other, an electrolyte solution flows into the anode electrode disposed in the plating treatment tank, and the electrode is energized between the anode electrode and the plated substrate, and the anode electrode and the surface to be plated in the plating treatment tank are connected. It is isolate | separated by a partition and it is characterized by performing plating by dividing into a plating substrate chamber and an anode electrode chamber.

According to the above configuration, the anode electrode and the plated surface are separated by partition walls in the plating treatment tank, and the plating is performed by dividing the plating substrate chamber and the anode electrode chamber, thereby preventing contamination of the plating surface by particles or the like caused by the anode electrode. can do.

Other objects, features and advantages of the present invention will be fully understood from the description below. Further advantages of the present invention will become apparent from the following description with reference to the accompanying drawings.

(First embodiment)

An embodiment of the present invention will be described below with reference to FIGS. 1 to 8A and 8B.

1 is a cross-sectional view showing a schematic configuration of a plating treatment tank formed in the plating apparatus of this embodiment. As shown in FIG. 1, the plating processing tank 100 includes a wafer holder 2 holding a semiconductor wafer (plated substrate) 1, a cup 3, a nozzle for plating liquid supply (plating liquid injection tube) ( 4), the anode electrode 5, the holding body 6 holding the anode electrode 5, the partition 7, and the electrolyte supply pipe 8 are provided. The cup 3 has an inner cylinder 31 and an outer cylinder 32.

The inner cylinder (second cylindrical cup) 31 and the outer cylinder (first cylindrical cup) 32 are substantially cylindrical containers with an open upper surface, and are configured such that the outer diameter of the inner cylinder 31 is smaller than the outer diameter of the outer cylinder 32. to be. Moreover, in the outer cylinder 32, the bottom part is also open. Moreover, the electrolyte supply pipe 8 for supplying electrolyte solution to the anode electrode 5 is formed in the lowest center part of the inner cylinder 31. As shown in FIG.

1, the donut-shaped partition 7 is formed in the inner peripheral surface of the outer cylinder 32. As shown in FIG. The partition 7 is formed in the upper part of the outer cylinder 32, and is formed so that the inner cylinder 31 and the outer cylinder 32 may be partitioned. That is, the partition 7 is formed so as to isolate the semiconductor wafer 1 from the anode electrode 5. Accordingly, the plating treatment tank 100 is divided into a substrate chamber to be plated and an anode electrode chamber. In addition, in the plating process tank 100, a "plating substrate chamber" means the space enclosed by the outer cylinder 32 and the partition 7. In addition, "anode electrode chamber" means the space enclosed by the inner cylinder 31 and the partition 7. The plated surface W of the semiconductor wafer 1 is arranged in the substrate chamber to be plated. In addition, the anode electrode 5 is arranged in the "anode electrode chamber".

In addition, as shown in FIG. 1, the plating liquid supply nozzle 4 is formed so that the hole of the center part of the partition 7 may penetrate. The holding body 6 is connected to the inner cylinder 31, and has a structure which permeate | transmits electrolyte solution. The anode electrode 5 is formed on the holder 6. The anode electrode 5 is located above the lower end of the plating liquid supply nozzle 4.

The partition 7 has a hydrocarbon-based cation exchange membrane. However, if the partition wall 7 is provided with the permeable member which has the structure which can permeate | transmit the ion in the electrolyte solution which flowed in from the electrolyte supply pipe 8 in the vicinity of the anode electrode 5 and the holding body 6, ie, the anode electrode chamber, It is not specifically limited. For example, the partition 7 may be provided with an ion exchange membrane, a neutral membrane, a porous ceramic, or the like. In addition, when the partition wall 7 is equipped with a hydrocarbon type cation exchange membrane, specifically, as a hydrocarbon type cation exchange membrane, selenion (trademark) (Asahi Glass Engineering Co., Ltd., hydrocarbon type cation exchange membrane) or neoceptor CM is mentioned. -1 (registered trademark) (manufactured by Atomus Co., Ltd., hydrocarbon-based cation exchange membrane) is exemplified. The specific structure of the partition 7 is mentioned later.

The inner cylinder 31 and the outer cylinder 32, the plating liquid supply nozzle 4, and the holder 6 in the cup 3 are made of polypropylene. The anode electrode 5 is a soluble anode electrode made of phosphorus-containing copper. However, the member made of propylene is not particularly limited as long as it is secured in dimensional stability and resistant to plating solution or electrolyte solution. For example, the inner cylinder 31, the outer cylinder 32, the plating liquid supply nozzle 4, and the holder 6 may be made of hard vinyl chloride.

In addition, the ion exchange membrane in the said patent document 3 is used as a bottom lid in order to immerse the positive electrode which becomes a lid side in a plating solution in a face-up apparatus in a plating solution, and the objective of installation is fundamentally different from this invention.

Moreover, about the plating apparatus of the said patent document 4, since the plating apparatus of a present Example employ | adopts a face down system, operability is improved very much and it is set as the apparatus excellent in mass productivity.

In addition, about the plating apparatus of the said patent document 3, when a face up system is employ | adopted, a sample (plating substrate) cannot be collect | recovered until all the plating liquid has escaped from the inside of a plating chamber. If the plated surface is immersed in the plating liquid in the state where no voltage is applied, re-dissolution of metal ions is caused. On the other hand, since the plating apparatus of this embodiment employs a face down method, the sample (plated substrate) can be recovered immediately after the plating is completed, and the mass productivity is improved, and the quality is improved.

Generally, various additives are added to the plating liquid. It is largely divided into materials of the kind which act on the surface to be plated and materials which act on the surface of the anode electrode. Among these, the substance acting on the surface to be plated causes a decomposition reaction or the like on the surface of the anode electrode to generate a reaction product. This reaction product adversely affects the plating reaction.

Moreover, it is preferable that the said plating liquid contains a copper component and is also a conductive liquid.

By using the plating liquid containing copper as a plating liquid, copper plating can be formed in the to-be-plated surface of a to-be-plated board | substrate. Moreover, when the said plating liquid contains the copper component of 14 g or more and 40 g or less with respect to 1 liter of plating liquids, especially a favorable plating state can be implement | achieved.

In addition, it is preferable that the said anode electrode is a soluble anode electrode which consists of phosphorus containing copper containing 0.04-0.06% phosphorus.

When a positive electrode containing pure copper is used as the positive electrode, the amount of foreign matter generation from the positive electrode increases. On the other hand, according to the above configuration, since the anode electrode is a soluble anode electrode made of phosphorus-containing copper, a black film called a black film is formed on the surface of the anode electrode, thereby trapping copper complex ions (Cu ⁺ ) that cause foreign matter. .

In addition, in order to prevent adhesion of the minute solid foreign substances resulting from a black film etc. conventionally, it was necessary to use an insoluble electrode. For this reason, there existed a problem that plating quality fell by the increase of the additive consumption amount by the oxidative decomposition of the additive in a plating liquid, or the contamination of the plating liquid by the decomposition product.

The "electrolyte" refers to a solution that does not contain a substance acting on the surface to be plated of the substrate to be plated. In the above structure, the electrolyte solution flows into the anode electrode chamber, the plating liquid flows into the substrate chamber to be plated, and the anode electrode chamber and the substrate substrate chamber are separated by a partition wall, so that the decomposition reaction does not occur on the surface of the anode electrode and the plating is performed. Does not adversely affect the reaction.

Moreover, even if a substance which adversely affects the plating is produced, since it is blocked by the partition wall, it is possible to prevent the adverse effect on the surface to be plated.

The electrolyte solution specifically refers to a solution which does not contain a desired metal (for example, copper in the case of copper plating) in the plating treatment. On the other hand, a plating liquid means the solution containing a desired metal. In addition, electrolyte solution and plating liquid are common in the point which has electroconductivity.

More specifically, when a solution containing copper sulfate is used as the plating solution, the electrolyte is sulfuric acid or an aqueous solution in which sulfuric acid is diluted.

Moreover, in this invention, even if it is a solution containing a desired metal or the same solution as a plating liquid, it is possible to prevent adhesion of the micro solid foreign material resulting from a black film. This is because even if a substance which adversely affects plating is formed on the surface of the anode electrode, since it is blocked by the partition wall, it is possible to prevent the adverse effect on the surface to be plated.

That is, the said electrolyte solution contains a copper component and may be an electroconductive liquid.

Moreover, the said electrolyte solution may contain the copper component of 14g or more and 40g or less with respect to 1 liter of electrolyte solution.

Here, the dimension of the semiconductor wafer 1 applicable to this embodiment can be set suitably according to the dimension of the various members of the plating process tank 100. As shown in FIG. For example, as the semiconductor wafer 1, the thing about 100-300 mm in diameter is applicable. More specifically, a diameter of about 150 mm can be applied as the semiconductor wafer 1.

The inner cylinder 31 has an outer diameter of 130 mm, an inner diameter of 120 mm, a thickness of 5 mm, and a height of 110 mm, and has a cylindrical shape.

In addition, the holding body 6 is formed between the inner cylinder 31 and the plating liquid supply nozzle 4. The holding body 6 is provided in the space | gap of 20 mm or at least 5 mm upward from the bottom part of the inner cylinder 31. As shown in FIG. Moreover, the holding body 6 is formed with a plurality of through holes in the vertical direction.

In addition, the partition wall 7 is closely attached to the outer cylinder 32, and is fixed. In addition, the height of the outer cylinder 32 may be 30 mm or more. In addition, in FIG. 1, the lower end of the outer cylinder 32 is set to be upper side (the to-be-plated substrate side) than the lower end of the inner cylinder 31. Moreover, as shown in FIG. However, the lower end of the outer cylinder 32 is not limited to this, and may be lower than the lower end of the inner cylinder 31. In addition, although the inner diameter of the outer cylinder 32 is 140 mm, it is not limited to this.

Moreover, in the plating process tank 100, the height of the inner cylinder 31 is 110 mm, and the clearance gap between the partition 7 and the upper end of the inner cylinder 31 is 5 mm. However, the height of the inner cylinder 31 and the gap between the partition wall 7 and the upper end of the inner cylinder 31 are not limited to the above dimensions, so long as the electrolyte solution is sufficiently in contact with the surface outer periphery of the partition wall 7. Suffice.

The partition wall 7 has a donut shape having an outer diameter of 140 mm and an inner diameter of 20 mm. And the outer periphery of the partition 7 is in close contact with the outer cylinder 32, and the inner periphery is in close contact with the plating liquid supply nozzle 4, and is fixed. However, the dimension of the partition 7 is not limited to this. In addition, when the partition 7 is a selenion product, even if the thickness is 100 micrometers, it can use, or even about 100-200 micrometers can be used.

The anode electrode 5 made of phosphorus-containing copper has an outer diameter of 110 mm, an inner diameter of 30 mm, and a thickness of 8 mm. However, the dimension of the anode electrode 5 is not limited to this, but the electrolyte solution passing through the gap between the holder 6 and the partition wall 7 and the gap between the inner cylinder 31 and the anode electrode 5 is not limited to this. It can be selected arbitrarily in the range that does not disturb the flow.

The plating liquid supply nozzle 4 penetrates through the partition wall 7 and extends 2 mm above the partition wall 7. However, the plating liquid supply nozzle 4 is not limited to this, The plating liquid supply nozzle 4 should reach | attach to the partition 7, and should just be fixed to the partition 7 closely.

As described above, the semiconductor wafer 1, the cup 3 (the inner cylinder 31 and the outer cylinder 32), the plating liquid supply nozzle 4, the anode electrode 5, and the holder in the plating treatment tank 100 are described above. 6) and the size of the partition wall 7, and the like, the dimensions of the various members in the plating bath 100, depending on the size of the plating bath 100, or the size of the semiconductor wafer 1 to be applied, It is possible to set appropriately.

Hereinafter, the specific structure of the wafer holder 2 holding the semiconductor wafer 1 is demonstrated based on FIG. 2 is a cross-sectional view showing an example of the configuration of the wafer holder 2 of the plating processing tank 100. As shown in FIG. 2, the wafer holder 2 includes an O-ring 21, a contact member 22, and a wafer holding ring 23. The wafer holding ring 23 holds a predetermined gap with the upper end of the outer cylinder 32 and is held by a support not shown. And the O-ring 21 and the contact member 22 are formed on the wafer holding ring 23, and ensure the adhesiveness with the semiconductor wafer 1 to hold | maintain.

In addition, three contact members 22 are formed in the outer peripheral portion of the semiconductor wafer 1 at equal intervals. However, the contact member 22 is not limited to this, and four or more places may be formed in the outer peripheral part of the semiconductor wafer 1 at equal intervals. In addition, the structure which the contact member 22 contacts the perimeter of the outer peripheral part of the semiconductor wafer 1 may be sufficient.

Although the internal diameter of the wafer holding ring 23 was 140 mm, it is not limited to this, It does not need to be circular in shape, Of course, it may be an integrated structure etc. with an apparatus housing. In addition, a return pipe 10 is formed in a part of the outer cylinder 32.

Hereinafter, various members of the wafer holder 2 will be described.

The O-ring 21 is not particularly limited as long as the adhesion to the semiconductor wafer 1 is ensured and the resin is resistant to the plating liquid. For example, as the O-ring 21, silicone rubber is exemplified. Specifically, Viton (trademark) (the DuPont Dow Elastomer Japan product) is illustrated.

The contact member 22 is not particularly limited as long as the contact member 22 is secured to the semiconductor wafer 1 and is resistant to the plating liquid used for conduction. For example, the member by which metal plating was given to titanium is illustrated. Specifically, examples of the contact member 22 include those in which platinum is plated on titanium, gold plating on titanium, gold plating on resin, or a combination thereof.

The wafer holding ring 23 is not particularly limited as long as the dimensional stability is ensured and the plating liquid used is resistant to the plating liquid. As the wafer holding ring 23, for example, one made of hard vinyl chloride or polypropylene is exemplified.

Next, with reference to FIG. 3, an example of the structure of the partition 7 formed in the plating process tank 100 between the to-be-plated surface W of the semiconductor wafer 1 and the anode electrode 5 is referred. Will be described below. FIG. 3 shows a configuration of a region (plated substrate chamber) surrounded by the outer cylinder 32 and the partition wall 7 in the plating processing tank 100, and the upper view shows the plated surface W of the semiconductor wafer 1. It is the top view seen from the side, and a lower figure is sectional drawing.

As shown in FIG. 3, the partition wall 7 has a donut shape when viewed from the side to be plated. And the plating liquid supply nozzle 4 penetrates through the center part of the partition 7. Moreover, the outer peripheral part of the partition 7 is being fixed to the upper part of the outer cylinder 32. As shown in FIG.

The partition wall 7 is provided with a semipermeable membrane (permeable member) 71 and semipermeable membrane holders 72, 73. The partition 7 has a configuration in which the semipermeable membrane holders 72 and 73 sandwich the semipermeable membrane 71. A semi-permeable membrane holder 72 is disposed on the anode electrode 5 side, and a semi-permeable membrane holder 73 is disposed on the plated surface W side of the semiconductor wafer 1.

Therefore, the electrolytic solution flowing into the anode electrode 5 side (anode electrode chamber) is transmitted through the semi-permeable membrane holder 72 by energizing between the semiconductor wafer 1 and the anode electrode 5. And in the semi-permeable membrane 71, the ion in electrolyte solution permeate | transmits. The ions in the electrolytic solution transmitted through the semi-permeable membrane 71 pass through the semi-permeable membrane holder 73 and flow into the surface to be plated W of the semiconductor wafer 1 (plated substrate chamber). At this time, in the semi-permeable membrane 71, only the ions in the electrolyte are permeable, and particles in the electrolyte are not permeated. Therefore, the partition wall 71 makes it possible to separate particles in the electrolyte solution, thereby preventing contamination of the plated surface caused by the particles caused by the anode electrode 5.

The semi-permeable membrane 71 is not particularly limited as long as the semi-permeable membrane 71 is immersed in the electrolyte solution and transmits ions in the electrolyte solution. For example, as the semipermeable membrane 71, a hydrocarbon-based cation exchange membrane, a neutral membrane, a porous ceramic, or the like is exemplified. In the case where the semipermeable membrane 71 is a hydrocarbon-based cation exchange membrane, specifically, as the semipermeable membrane 71, selenion (registered trademark) (Asahi Glass Engineering Co., Ltd., hydrocarbon-based cation exchange membrane), or Neoceptor CM-1 (registered trademark) ) (Manufactured by Atomus Co., Ltd., hydrocarbon-based cation exchange membrane).

In addition, the semi-permeable membrane holders 72 and 73 are not particularly limited as long as they have a structure that permeates the electrolyte, ensure dimensional stability, and are resistant to the plating liquid. For example, as the semipermeable membrane holders 72 and 73, those made of polypropylene or hard vinyl chloride are exemplified.

Next, the structure of the semipermeable membrane 71 is described below by taking an ion exchange membrane containing an ion exchange resin as an example. 4 is an explanatory diagram for explaining the structure of an ion exchange membrane. 5 is explanatory drawing for demonstrating the selective permeability of an ion exchange membrane.

As shown in FIG. 4, "ion exchange membrane" refers to a membrane that selectively permeates ions. This ion exchange membrane is roughly divided into a cation exchange membrane and an anion exchange membrane. As shown in FIG. 4, the cation exchange membrane selectively permeates cations (M ⁺ ) and does not permeate anions (B ⁻ ) when energized in a state immersed in a plating solution.

As illustrated in FIG. 5, a negative charge exchanger is fixed to the cation exchange membrane. For this reason, anion (B <^-> ) receives repulsion of the exchange group of negative charge, and cannot permeate | transmit. On the other hand, the cation (M ⁺ ) does not receive a repulsion from the exchange group of negative charge, and thus transmits it. That is, the only ions that can pass through the cation exchange membrane are cations (M ⁺ ).

On the other hand, the anion exchange membrane has a function opposite to that described above. Selective permeation of these ion exchange membranes is performed by direct current electrical energy of the electrodialysis apparatus.

Next, the structure of the plating apparatus of this embodiment is demonstrated with reference to FIG. 6 is a schematic view showing the configuration of the plating apparatus of this embodiment.

As shown in FIG. 6, the plating apparatus of this embodiment includes a plating treatment tank 100 for plating the surface to be plated W of the semiconductor wafer 1, and a plating solution 20 for circulating a plating liquid in the plating apparatus. ) And an electrolytic solution system 30 for circulating the electrolytic solution in the plating apparatus.

The plating liquid meter 20 includes a plating liquid reservoir 9 serving as a plating liquid supply source, an outer cylinder 32, a return pipe 10 connected to a part of the outer cylinder 32, and a plating liquid pump 101 for circulating the plating liquid into the plating apparatus. ), A plating liquid filter 111 for filtering solid foreign matter in the plating liquid, and a pipe T connecting them.

On the other hand, the electrolytic solution system 30 includes an electrolytic solution tank 22 for providing a member (the wafer holder 2, the cup 3, and the member they contain) contained in the plating treatment tank 100 therein, and an electrolytic solution. An electrolyte storage tank 23 as a supply source, an electrolyte pump 102 for circulating the electrolyte solution into the plating apparatus, an electrolyte filter 112 for filtering solid foreign matter in the electrolyte solution, and a pipe T 'for connecting them are provided.

Hereinafter, the flow of a plating liquid or electrolyte solution in the plating apparatus of the present embodiment will be described.

First, in the plating liquid meter 20, the plating liquid in the plating liquid storage tank 9 flows in through the plating liquid filter 11 by the plating liquid pump 101, and flows into the plating liquid supply nozzle 4 of the plating liquid processing tank 100. Then, the plating liquid introduced into the plating liquid supply nozzle 4 flows into the plated substrate chamber (the space enclosed by the partition wall 7 and the outer cylinder 32) of the plating processing tank 100, thereby The plated surface (W) is reached. Then, the plating liquid flows into the return pipe | tube 10 formed in the edge part of the upper part of the outer cylinder 32, and is returned to the plating liquid storage tank 9 again.

In addition, in the electrolyte system 30, the electrolyte solution in the electrolyte storage tank 23 flows into the electrolyte solution supply pipe 8 of the plating treatment tank 100 via the electrolyte filter 112 by the electrolyte pump 102. The electrolyte flowing into the electrolyte supply pipe 8 flows into the anode electrolytic chamber (the space surrounded by the partition 7 and the inner cylinder 31). The partition wall 7 does not transmit the black film in the electrolyte solution generated at the anode electrode to the substrate chamber to be plated, while the ions in the electrolyte solution are transmitted to the substrate chamber to be plated. Thereby, a conduction state is implement | achieved and plating process is performed.

The electrolyte flowing into the anode electrode chamber leaks out of the plating chamber 100 from the marginal portion (the gap between the inner cylinder 31 and the outer cylinder 32) on the upper portion of the inner cylinder 31 and is recovered from the electrolyte tank 22. It is returned to the plating liquid reservoir 23 again.

The plating liquid reservoir 9 and the pipe T in the plating liquid meter 20 are not particularly limited as long as the dimensional stability is secured and the material is resistant to the plating liquid to be used. As these materials, hard vinyl chloride or polypropylene is illustrated, for example. In addition, in the electrolyte system 30, the electrolyte tank 22, the electrolyte storage tank 23, the electrolyte filter 112, and the pipe T 'are ensured in dimensional stability and are also resistant to the electrolyte solution to be used. If it is, it is not specifically limited. As these materials, hard vinyl chloride or polypropylene is illustrated, for example.

The plating liquid pump 101 in the plating liquid meter 20 is not particularly limited as long as it is resistant to the plating liquid to be used and can be flowed without adversely affecting the plating liquid. As the plating liquid pump 101, the Iwaki-made magnet pump MD-30R or the Iwaki-made magnet pump MD-6-MD-7R is illustrated, for example.

In addition, the electrolyte pump 102 in the electrolyte system 30 is not particularly limited as long as it is resistant to the electrolyte solution to be used and can be flowed without adversely affecting the electrolyte solution. As electrolyte solution 102, the Iwaki-made magnet pump MD-70R or the Iwaki-made magnet pump MD-30-MD-100R are illustrated, for example.

In addition, the plating liquid filter 111 and the electrolyte filter 112 have a collection efficiency of 100% of the particle size of approximately 1/2 of the minimum interval of the target plating pattern, and are resistant to the plating liquid (or electrolyte) to be used. If the fluid can be flowed without adversely affecting the plating liquid (or electrolyte solution), it is not particularly limited. As the plating liquid filter 111 and the electrolyte filter 112, for example, the polypropylene cartridge filter HDCII (J012; 1.2 micrometer diameter particle collection efficiency 100%) by the Japan Corporation (Pall Corporation), the polypropylene cartridge filter by the Japan Corporation HDCII (J006; 1.0 micrometer diameter particle | grain collection efficiency 100%), the Teflon (trademark) filter, or a hollow membrane filter are illustrated.

In addition, although not shown in FIG. 6, a valve, a flow meter, an air discharge pipe, or the like is connected in the middle of the pipes T and T ', and similarly, the control of the plating liquid can be controlled by a control device not shown. A voltage can be applied between the plated surface and the anode electrode by the plating power supply unit (not shown).

Next, the semiconductor wafer 1 used as a to-be-plated board | substrate in this Example is demonstrated based on FIG. 7 is a schematic diagram showing a schematic configuration of the semiconductor wafer 1 used in this embodiment. 8A and 8B show a schematic configuration of the semiconductor chip 41 formed on the semiconductor wafer 1 after the plating process, FIG. 8A is a plan view, and FIG. 8B is a sectional view.

As shown in FIG. 7, a plurality of semiconductor chips 41 are formed on the surface of the semiconductor wafer 1. In addition, a contact portion 42 is formed around the semiconductor wafer 1. The plating seed layer (not shown) is exposed to this contact portion 42. The contact portion 42 is in contact with the contact member 22 shown in FIG. 2 for power feeding.

8A, the photoresist layer 18 is formed in the arbitrary shape in the semiconductor chip 41. As shown in FIG. As shown in FIG. 8B, the seed layer 19 is formed on the surface of the semiconductor chip 41 after the plating process. The wiring plating layer 16 and the photoresist layer 18 are formed on the surface of the seed layer 19. In the seed layer 19, a pad 17 is formed on the side opposite to the wiring plating layer 16 and the photoresist layer 18 side. In the semiconductor chip 41, the wiring plating layer 16 and the pad 17 are in electrical contact with each other.

(2nd Example)

Another embodiment of the present invention will be described with reference to FIGS. 9 and 10 as follows. In the present embodiment, differences from the first embodiment will be described. Therefore, for convenience of description, members having the same functions as those described in the first embodiment will be denoted by the same reference numerals, and description thereof will be omitted.

9 is a sectional view showing a schematic configuration of a plating treatment tank formed in the plating apparatus of this embodiment. As shown in FIG. 9, the plating bath 200 includes a wafer holder 2 holding a semiconductor wafer (plated substrate) 1, a cup 3, a plating liquid supply nozzle 4, and an anode electrode. (5), a holding body (6) holding the positive electrode (5), a partition wall (7), an electrolyte supply pipe (8), an upper cover (28), and an O-ring (29). The cup 3 has an inner cylinder 31 and an outer cylinder 32.

As shown in FIG. 9, the plating process tank 200 in the plating apparatus of this embodiment is provided with the top cover 28 and the O-ring 29 in addition to the structure of the said 1st Example. The upper lid 28 and the O-ring 29 function as the substrate chamber closing means to be plated. Hereinafter, the upper cover 28 and the O-ring 29 will be described. Moreover, in the plating process tank 200, the semiconductor wafer 1, the wafer holder 2, the cup 3 (inner cylinder 31 and outer cylinder 32), the plating liquid supply nozzle 4, and an anode electrode (5) Since the dimensions and the configuration of the holder 6, the partition 7, and the electrolyte supply pipe 8 are the same as those in the first embodiment, description thereof is omitted.

As shown in FIG. 9, the upper lid 28 is formed along the outer circumference of the outer cylinder 32. And the O-ring 29 is formed between the outer cylinder 32 and the upper lid 28, and ensures the adhesiveness with the outer cylinder 32. As shown in FIG.

The plating liquid flowing into the plating liquid supply nozzle 4 reaches the plating surface W of the semiconductor wafer 1. In the plating treatment tank 200, the adhesion between the upper lid 28 and the outer cylinder 32 is secured by the O-ring 29. In other words, the substrate chamber to be plated is closed (closed system). For this reason, the plating liquid which reached | attained the to-be-plated surface W of the semiconductor wafer 1 flows into the return pipe | tube 10, without leaking to the exterior of the plating process tank 200. FIG. Thus, since the to-be-plated board | substrate chamber is abolished, it becomes possible to interrupt | block the plating liquid which flows into a to-be-plated board | substrate from the atmosphere outside the plating process tank 200. For this reason, in the plating process tank 200, a plating liquid does not leak outside and it becomes possible to prevent the atmospheric contamination by evaporation, mist, etc. of a plating liquid. In addition, it becomes possible to prevent the fluctuation of the ion concentration accompanying the evaporation of the plating liquid.

In addition, the dimension of the said upper cover 29 will not be specifically limited if it is a dimension which can close the to-be-plated substrate chamber. In addition, the dimension of the upper cover 29 can be set suitably according to the dimension of the outer cylinder 32. As shown in FIG.

In addition, the top cover 29 is made of polypropylene. However, the material of the upper lid 29 is not particularly limited as long as the material is secured in dimensional stability and resistant to the plating liquid. For example, the upper lid 29 may be made of hard vinyl chloride.

The O-ring 29 is not particularly limited as long as the O-ring 29 is secured to the outer cylinder 32 and has resistance to the plating liquid to be used. For example, as the O-ring 29, silicone rubber is exemplified. Specifically, Viton is illustrated.

Next, the structure of the plating apparatus of this embodiment is demonstrated with reference to FIG. 10 is a schematic view showing the configuration of the plating apparatus of this embodiment.

As shown in FIG. 6, the plating apparatus of this embodiment includes a plating treatment tank 100 for plating the surface to be plated W of the semiconductor wafer 1, and a plating solution 20 for circulating a plating liquid in the plating apparatus. '), An electrolyte system 30' for circulating the electrolyte in the plating apparatus, and a supply liquid system 40 for controlling the concentration of the circulating plating liquid and replenishing the replenishing liquid according to the ion concentration of the plating liquid.

The plating liquid meter 20 'includes a plating liquid reservoir 9' serving as a plating liquid supply source, an outer cylinder 32, a return pipe 10 connected to a part of the outer cylinder 32, and a plating liquid pump for circulating the plating liquid into the plating apparatus ( 101, a plating liquid filter 111 for filtering solid foreign matter in the plating liquid, and a pipe T connecting them. Unlike the plating solution system 20 in the plating apparatus of the first embodiment, the plating solution meter 20 'has a cover attached to the plating solution reservoir 9' and is in a closed state (closed system).

In addition, the electrolyte system 30 'is provided with a member (a wafer holder 2, a cup 3, and a member and a top cover 28) contained in the plating bath 200 therein. The electrolyte tank 22 ', the electrolyte reservoir 23' as the electrolyte supply source, the electrolyte pump 102 for circulating the electrolyte in the plating apparatus, the electrolyte filter 112 for filtering the solid foreign matter in the electrolyte, and connecting them The pipe T 'is provided. Unlike the electrolyte solution 30 in the plating apparatus of the first embodiment, the electrolyte solution 30 'has a cover attached to the electrolyte reservoir 23' and is in a closed state (closed system). In the electrolyte system 30 ', the outer cylinder 32 is in close contact with the electrolyte tank 22' so as to completely close the opening of the electrolyte tank 22 '. In other words, the electrolyte tank 22 'is in a closed state (closed system).

In addition, the replenishment liquid meter 40 includes a replenishment unit 24, a replenishment pump 25, a replenishment replenishment tank 26, a sensor 27, and a pipe T ′ for connecting them. . The pipe T "is connected to the plating reservoir 9 'of the plating solution 20'. The sensor 27 also detects the ion concentration of the plating liquid in the plating solution reservoir 9 '. The ion concentration information of the plating liquid obtained in the above) is transmitted to the pump 25 as an electric signal through the replenishing unit 24. Then, instructed by this electric signal, the replenishment pump 25 is discharged from the replenishing liquid tank 26. The replenishment liquid is supplied to the plating liquid storage tank 9 '.

10, the replenishment liquid system 40 is shown in one system. However, the replenishment liquid meter 40 is not limited to this, and may be formed by the number of types of liquids that need to be managed and replenished among the components in the plating liquid. In addition, instead of the replenishment liquid tank 26 and the replenishment pump 25, the valve etc. which are controlled by the replenishment piping of a pure water, and a replenishment unit may be formed.

Hereinafter, the flow of a plating liquid or electrolyte solution in the plating apparatus of the present embodiment will be described.

First, in the plating liquid meter 20 ', the plating liquid in the plating liquid storage tank 9' flows through the plating liquid filter 11 by the plating liquid pump 101, and flows into the plating liquid supply nozzle 4 of the plating treatment tank 200. do. Then, the plating liquid introduced into the plating liquid supply nozzle 4 flows into the plated substrate chamber (the space enclosed by the partition wall 7 and the outer cylinder 32) of the plating processing tank 100, thereby The plated surface (W) is reached. Then, the plating liquid flows into the return pipe | tube 10 formed in the periphery part of the upper part of the outer cylinder 32, and is returned to plating liquid reservoir 9 'again.

At this time, the substrate to be plated is in the state of being abolished by the upper lid 28, so that the plating liquid introduced into the substrate to be plated is blocked from the atmosphere, and it is possible to prevent atmospheric contamination by evaporation or mist of the plating liquid. do. In addition, it becomes possible to prevent the fluctuation of the ion concentration accompanying the evaporation of the plating liquid. In addition, since the plating liquid reservoir 9 'also has a cover and is in a closed state, the plating liquid flowing into the plating liquid reservoir 9' is blocked from the atmosphere. For this reason, in a plating apparatus, it becomes possible to prevent the atmospheric contamination by evaporation, mist, etc. of a plating liquid. In addition, it becomes possible to prevent the fluctuation of the ion concentration accompanying the evaporation of the plating liquid.

In addition, in electrolyte solution 30 ', electrolyte solution in electrolyte storage tank 23' flows into electrolyte solution supply pipe 8 of plating process tank 200 via electrolyte solution filter 112 by electrolyte solution pump 102. The electrolyte flowing into the electrolyte supply pipe 8 flows into the anode electrode chamber (the space enclosed by the partition 7 and the inner cylinder 31). The partition wall 7 does not transmit the black film in the electrolyte solution generated at the anode electrode to the substrate chamber to be plated, while the ions in the electrolyte solution are transmitted to the substrate chamber to be plated. Thereby, a conduction state is implement | achieved and plating process is performed.

The electrolyte flowing into the anode electrode chamber leaks out of the plating chamber 200 from the marginal portion (the gap between the inner cylinder 31 and the outer cylinder 32) on the upper portion of the inner cylinder 31 and is recovered from the electrolyte tank 22 ′. Then, it is returned to the plating liquid reservoir 23 'again.

Here, since the electrolyte tank 22 'and the electrolyte storage tank 23' are in a closed state, the electrolyte flowing into the electrolyte tank 22 'and the electrolyte storage tank 23' is cut off from the atmosphere. For this reason, in a plating apparatus, it becomes possible to prevent atmospheric contamination by evaporation of electrolyte solution, mist, etc. In addition, it becomes possible to prevent the fluctuation of the ion concentration accompanying the evaporation of the electrolyte solution.

Further, the plating liquid reservoir 9 ', the plating liquid pump 101, the plating liquid filter 111, the pipe T, the electrolyte tank 22, the electrolyte storage tank 23, the electrolyte pump 102, the electrolyte filter 112, And since the material of the pipe T 'is the same as that of the said 1st Example, description is abbreviate | omitted here.

The pipe T "in the replenishment liquid system 40 is not particularly limited as long as the material is secured in dimensional stability and resistant to the replenishment liquid to be used. As the material of the pipe T", for example, Hard vinyl chloride, polypropylene, or Teflon® is exemplified.

In addition, the replenishment pump 25 is not particularly limited as long as it is resistant to the replenishment liquid to be used and can flow the replenishment liquid into the plating liquid reservoir 9 'without adversely affecting the plating liquid. As the replenishment pump 25, the Tokyo Rica apparatus microtube pump MP-1000 or the Tokyo Rica apparatus microtube pump MP-1000A-MP-1000B is illustrated, for example.

In addition, although not shown in FIG. 10, a valve, a flowmeter, an air discharge pipe, etc. are connected in the middle of piping T, T ', and T ", and similarly, control of the flow of a plating liquid is possible by the control apparatus not shown, A voltage can be applied between the plated surface and the anode electrode by the plating power supply unit (not shown).

In addition, the plating apparatus of this invention can be said as follows.

In other words, the plating apparatus of the present invention may be referred to as a plating apparatus for forming plating on a substrate, which is characterized by isolating an electrolytic core system consisting of an anode electrode and an electrolyte solution and a plating solution system consisting of a plated surface and a plating solution in a cup of the plating apparatus. have.

Moreover, in the said plating apparatus, a plating liquid is introduce | transduced into the space which consists of a partition formed in the outer cylinder of the said plating cup, and a to-be-plated board | substrate.

Moreover, in the said plating apparatus, electrolyte solution is introduce | transduced into the space which the anode electrode formed in the inner cylinder of the said plating cup, and a partition wall make.

In addition, the electrolyte flowing into the inner cylinder of the plating cup does not reach the substrate to be plated by the partition wall.

In addition, the electrolyte flowed into the inner cylinder of the plating cup is caused to flow out of the cup by flow.

A part or all of the structure (bulk wall) which isolate | separates an anode electrode and a to-be-plated board | substrate in the said plating cup is a material which can permeate | transmit ion by immersing in electrolyte solution.

It is preferable that the material which can permeate | transmit ion by immersing in the electrolyte which isolate | separates the anode electrode in the said plating cup and a to-be-plated board | substrate is a semi-permeable membrane.

It is preferable that the material which can permeate | transmit ion by immersing in the electrolyte which isolate | separates the anode electrode in the said plating cup and a to-be-plated board | substrate is an ion exchange membrane.

The plating apparatus of the present invention is configured to prevent contamination of the surface to be plated due to the anode electrode by separating the plating solution system and the electrolyte system independently from each other.

In addition, the plating apparatus of the present invention is configured to prevent plating quality deterioration of the surface to be plated due to decomposition of additives in the plating liquid caused by the anode electrode by separating the plating liquid system and the electrolyte system independently from each other.

In the above plating apparatus, the cup, the plating vessel, all the other vessels, and the pipes are all closed systems to block the plating solution and the electrolyte from the atmosphere, thereby preventing contamination of the atmosphere accompanying the evaporation of the liquid.

In the above plating apparatus, the cup, the plating vessel, the other vessels, and all the tubs and pipes are closed to block the plating solution and the electrolyte from the atmosphere, thereby preventing the liquid concentration change accompanying the evaporation of the liquid.

The plating liquid is a conductive liquid in which other components are added to a conductive liquid containing copper or a conductive liquid containing copper.

The plating liquid further contains 14 to 40 g of copper as metal copper in 1 liter of the plating liquid.

The said positive electrode is a soluble positive electrode plate which consists of phosphorus containing copper containing phosphorus whose phosphorus content is 0.04-0.06%.

In addition, electrolyte solution is an aqueous solution which diluted sulfuric acid or sulfuric acid.

In addition, the electrolytic solution may be a conductive liquid containing copper or a conductive liquid in which other components are added to the conductive liquid containing copper.

Moreover, it is preferable that electrolyte solution contains 14-40 g of copper components as metallic copper in 1 liter.

The semiconductor device of the present invention isolates and arranges an electrolyte system consisting of an anode electrode and an electrolyte solution and a plating solution system consisting of a plated surface and a plating solution in a cup in a face-down type plating apparatus for forming plating on a substrate.

Furthermore, a plating liquid is introduced into the space which consists of a partition in the outer cylinder of a plating cup, and a board | substrate which is a to-be-plated surface. At this time, the plating liquid is brought into contact with the surface to be plated by introducing a plating liquid into the space formed by the partition wall in the outer cylinder of the plated cup and the substrate to be plated, and plating is performed by energizing between the anode electrode disposed in the plated cup and the surface to be plated. In the above method, since the electrolyte solution introduced into the inner cylinder of the plating cup does not reach the surface to be plated by the partition wall, the solid foreign matters contained do not adhere to the surface to be plated.

In addition, plating is carried out by bringing a plating liquid into contact with the surface to be plated by flowing a plating solution into a space formed by a partition in the outer cylinder of the plating cup and a substrate to be plated, and energizing between the anode electrode disposed in the plating cup and the surface to be plated. In the method, the electrolyte flowing into the inner cylinder of the plating cup only penetrates the partition walls in the vicinity of the partition wall, and the other electrolyte flows out of the cup.

Part or all of the structure which isolate | separates the anode electrode and a to-be-plated surface in this plating cup is a material which can permeate | transmit ion by immersing in electrolyte solution.

The material which can permeate | transmit ion by immersing in the electrolyte which isolate | separates the anode electrode in a plating cup and a to-be-plated surface is a semi-permeable membrane or an ion exchange membrane.

A plating apparatus characterized by preventing contamination of the surface to be plated due to the anode electrode by separating the plating solution system and the electrolyte system independently from each other. It is a plating apparatus characterized by preventing the plating quality deterioration of a to-be-plated surface by the decomposition of the additive in the plating liquid resulting from a positive electrode by isolate | separating and respectively independent a plating liquid system and an electrolyte system.

The above-mentioned cup, plating bath, and all other tanks and pipes are closed systems to block the plating solution and the electrolyte from the atmosphere, thereby preventing evaporation of the liquid, contamination of the atmosphere, and change of the liquid concentration. As a result, it provides a semiconductor device and a method of manufacturing the same, without deteriorating the plating quality due to a fine solid foreign substance due to a black film or the like, without impairing the operability of the face-down type plating apparatus, and the like. Evaporation and mist generation can also be prevented.

As mentioned above, according to this invention, it has the following effects. The surface to be plated is in contact with the plating liquid from which solid foreign matter has been removed by the filter, and the electrolyte flowing in the vicinity of the anode electrode is isolated by the partition wall by the ion exchange membrane, and only copper ions penetrate the partition wall to reach the surface to be plated. A high-density and high-precision semiconductor device can be obtained by high quality plated wiring without adhesion of minute solid foreign matters resulting from black film or the like on the surface of the anode electrode.

In addition, since it is not necessary to use an insoluble electrode in order to prevent the adhesion of minute solid foreign substances due to a black film or the like as in the prior art, an increase in additive consumption due to oxidative decomposition of the additive in the plating liquid or contamination of the plating liquid due to decomposition products A high-density and high-precision semiconductor device can be obtained by high-quality plating wiring without deterioration of plating quality caused by the plating. In addition, since plating is performed in a closed system, there is no evaporation or mist of the plating solution and electrolyte, and stable concentration and cleanness. Maintain your environment.

(Third Embodiment)

In this embodiment, a manufacturing method of a semiconductor chip using the plating apparatus of the first embodiment or the second embodiment will be described in detail with reference to Figs. 13A to 13G and 14A to 14D. 13 is a sectional view showing a procedure of a method of manufacturing a semiconductor device in the present embodiment. In addition, in this embodiment, the manufacturing method of the semiconductor device 41 shown in FIG. 7, FIG. 8A, and FIG. 8B is demonstrated as an example of the manufacturing method of a semiconductor device.

13A to 13G, a seed layer forming step of forming a seed layer 19 on the surface of a semiconductor chip 41, and a photo layer on the seed layer 19, as shown in FIGS. A photoresist coating step of applying the resist layer 18, a photoresist pattern forming step of forming an arbitrary shape pattern on the photoresist layer 18, metal plating on the photoresist pattern, and a wiring plating layer are formed. The plating process mentioned above, the peeling process of peeling the photoresist layer 18, and the etching process of etching the seed layer 19 are included. 13A shows a schematic configuration of a part of the semiconductor chip 41 before the seed layer forming step, and FIG. 13B shows a schematic configuration of a part of the semiconductor chip 41 after the seed layer forming step. Shows a schematic configuration of a part of the semiconductor chip 41 after the photoresist coating step, and FIG. 13D shows a schematic configuration of a part of the semiconductor chip 41 after the photoresist pattern forming step, and FIG. 13E shows a plating process. Fig. 13F shows a schematic configuration of a part of the semiconductor chip 41 after the peeling step, and Fig. 13G shows a schematic configuration of a part of the semiconductor chip 41 after the etching step. A schematic configuration of the is shown.

As shown in Fig. 13A, on the surface of the semiconductor chip 41 before the seed layer is formed, a pad 17 for exchanging an electrical signal with the outside is formed.

As shown in FIG. 13B, the seed layer 19 is formed on the surface of the semiconductor chip 41 in the seed layer forming step. Specifically, in the sputtering apparatus, the semiconductor wafer including the semiconductor chip 41 is disposed so that the seed layer is formed on the pad formation surface. And a 1000 micrometers titanium layer used as a barrier metal is formed on the semiconductor wafer surface, and a 3000 micrometers copper layer is formed next. And this copper layer is used as the seed layer 19 for plating. The seed layer 19 serves as the first nucleus for promoting the growth of the plating material (the wiring plating layer 16) in the plating step described later.

Here, in the seed layer forming step, a titanium layer is formed as a barrier metal. However, the layer which becomes a barrier metal is not limited to this, A chromium layer may be sufficient. Moreover, the layer which consists of an alloy of titanium and tungsten may be sufficient. Moreover, in addition to these, the layer which consists of metal from which a barrier effect is obtained may be sufficient.

In addition, although the thickness of a titanium layer is 1000 kPa, it is not limited to this, As long as a barrier characteristic can be ensured, arbitrary thickness of 500 kPa or more may be sufficient. In addition, although the thickness of the copper layer as the seed layer 19 for plating is set to 3000 kPa, it is not limited to this, If the thickness which can ensure a uniform current density in a plating process, the thickness of a copper layer is 1000 kPa or more. Arbitrary thickness may be sufficient.

As shown in FIG. 13C, in the photoresist coating step, the photoresist layer 18 is applied to the semiconductor wafer including the semiconductor chip 41 on which the seed layer 19 is formed. In the photoresist coating step, a photoresist (manufactured by Tokyo Oka; trade name PMER P-LA900) is spun onto the surface of the semiconductor wafer 1 for 30 seconds at 1500 rotations per minute with a rotary coating device, and is then heated at 115 ° C. for 5 minutes. do.

Here, the PMER P-LA900 is used as the photoresist. However, the photoresist is not limited to this, and may be resistant to the plating step described later. As a photoresist, For example, Tokyo Oka; The brand name PMER N-CA3000 may be sufficient. In addition, the coating method of a photoresist is not limited to rotational coating. For example, Tokyo Oka products; You may form the photoresist layer 18 on the surface of the semiconductor wafer 1 with dry films, such as a brand name ORDYL MP100 Series.

In addition, in a photoresist application | coating process, the photoresist is rotationally apply | coated for 30 second at 1500 rotations per minute with a rotation coating apparatus, and is heated at 115 degreeC for 5 minutes. However, in the rotation coating method, it is not limited to this, For example, after rotating until it becomes a sufficiently uniform film thickness at 1000 rotation-3000 rotations per minute, you may heat at 100 degreeC-120 degreeC for about 5 minutes.

As shown in FIG. 13D, a pattern having an arbitrary shape is formed in the photoresist layer 18 formed in the photoresist coating step. Specifically, after the photoresist coating step, the semiconductor wafer including the semiconductor chip 41 is set in an exposure apparatus (not shown). The photoresist layer 18 is then irradiated with g-rays (436 nm). Thereafter, the photoresist layer 18 is developed with a 2.38% -TMAH aqueous solution by a developing device (not shown), and the photoresist of the portion to be wire-plated is removed.

Here, the photoresist layer 18 is irradiated with the g line (436 nm). However, the light irradiated to the photoresist layer 18 at the time of exposure will not be specifically limited if it is the light which can expose a photoresist. As light to irradiate the photoresist layer 18, i line | wire (365 nm) and deep ultraviolet ray (about 200-300 nm) may be sufficient, for example. In the photoresist pattern forming step, the photoresist layer 18 is developed with a 2.38% -TMAH aqueous solution. However, the concentration of the TMAH aqueous solution is not limited to this. For example, the concentration of the TMAH aqueous solution may be 1 to 3%. Moreover, you may dilute 25% -TMAH aqueous solution with pure water to the density | concentration suitable for image development.

As shown in FIG. 13E, in the plating step, a pattern having an arbitrary shape is formed in the photoresist layer 18 in the photoresist pattern forming step, and plating is performed on the portion where the seed layer 19 is exposed. . Specifically, after the photoresist pattern forming step, the semiconductor wafer including the semiconductor chip 41 is provided in the plating apparatus shown in FIG. 1. That is, the semiconductor wafer 1 is provided in the wafer holder 2 of the plating apparatus. The O-ring 21 and the contact material 22 are brought into close contact with the contact portion 42 of the semiconductor chip 41 by a wafer pressing portion (not shown).

The said plating process is a process of applying the plating method as one process of the manufacturing method of a semiconductor device by the plating apparatus of a 1st Example or a 2nd Example. In other words, the plating apparatus of the first or second embodiment is used in the method of manufacturing the semiconductor device of the present embodiment.

Here, as an example of such a plating process, the case where the plating apparatus shown in FIG. 6 is used is demonstrated. In addition, the plating apparatus used in the said plating process is not limited to this.

In the above plating process, the dilute sulfuric acid (electrolyte solution) stored in the electrolyte reservoir 23 is about 20 L per minute or 10 to 20 L per minute or the desired object by the electrolyte pump 102 which is operated by a control device (not shown). It is sent to the electrolyte filter 112 at a flow rate that can be. At this time, the electrolyte stored in the electrolyte reservoir 23 contains about 200 g / L or 150-250 g / L sulfuric acid.

The electrolyte solution from which solid foreign matters larger than the filter opening diameter is removed by the electrolyte filter 112 flows into the cup 3 through the pipe T '. And the electrolyte solution which flowed in from the lower part of the inner cylinder 31 of the cup 3 flows into the clearance gap between the bottom part of the inner cylinder 31, and the holder 5. The electrolyte flowing into the gap between the bottom of the inner cylinder 31 and the holder 5 rises to surround the anode electrode through a through hole drilled through the holder, and flows along the partition 7 in the circumferential direction. Then, the electrolyte flows through the gap between the inner cylinder 31 and the outer cylinder 32 and flows out into the electrolyte tank 22 outside the cup, and is returned to the electrolyte reservoir 23. Here, the anode electrode 6 is made of phosphorus-containing copper containing 0.04 to 0.06% of phosphorus.

On the other hand, the plating liquid stored in the plating liquid reservoir 9 is flown at a rate of about 2 L per minute or 1 to 2 L per minute or the desired purpose by the plating liquid pump 101 which is operated by a control device (not shown). It is sent to the plating liquid filter 111. At this time, the plating liquid stored in the plating liquid storage tank 9 is a duri plating liquid (microfabric Cu 200 Nippon Electroplating Engineers Co., Ltd.) containing about 25 g / L of copper in terms of additives and metal copper, not shown.

The plating liquid from which solid foreign substances larger than the filter opening diameter are removed by the plating liquid filter 111 flows into the plating liquid supply nozzle 4 via the pipe T. Then, the plating liquid flows from the lower part into the gap formed by the semiconductor wafer 1 and the partition wall 7 to fill the gap. As a result, the surface of the plating liquid contacts the plated surface W of the semiconductor wafer 1.

After the plating liquid contacts the plated surface W of the semiconductor wafer 1, the plating liquid projects from the upper edge of the outer cylinder 32 to the outside of the wafer holder, and passes through a return tube provided in a portion of the outer cylinder 32 to form a plating liquid reservoir ( Reflux to 9).

At this time, the plated surface W of the semiconductor wafer 1 is used as a cathode, and a voltage is applied between the plated surface W and the anode electrode 5 while controlling a current by a plating power supply (not shown). Lower surfaces of the anode electrode 5 generate copper ions. The generated copper ions pass through the partition wall 7 and reach the surface of the semiconductor wafer 1 serving as the cathode electrode through the inside of the outer cylinder 32. On the surface to be plated W of the semiconductor wafer 1, copper ions are deposited and plated with a film thickness of about 10 mu m as copper while the additive in the plating liquid has a predetermined function.

In addition, the inside of the inner cylinder 31 is filled with the electrolyte solution from which solid foreign substances more than the filter opening diameter were removed via the electrolyte filter 112. The electrolyte flowing in the vicinity of the anode electrode cannot flow into the outer cylinder 32 by the partition wall 7, and only copper ions penetrate the partition wall 7 to reach the outer cylinder 32. For this reason, the to-be-plated surface W of the semiconductor wafer 1 lose | disappears the adhesion of the micro solid foreign material resulting from the black film etc. of the surface of an anode electrode. In addition, in order to prevent the adhesion of minute solid foreign substances due to black films or the like, there is no need to use an insoluble electrode. Therefore, an increase in additive consumption due to oxidative decomposition of the additive in the plating liquid or contamination of the plating liquid due to decomposition products There is no deterioration in the plating quality, and high quality plating can be obtained.

Moreover, in this plating process, electrolyte solution flows into the anode electrode chamber (the space enclosed by the partition 7 and the inner cylinder 31), and the space enclosed by the to-be-plated substrate chamber (the partition 7 and the outer cylinder 32). Plating is carried out by pouring a plating liquid into the mold). In this way, plating is performed by dividing the electrolyte solution and the plating solution, thereby making it possible to reduce the required amount of the expensive plating solution. In addition, when decomposition or contamination of the plating liquid occurs, it is necessary to replace the plating liquid in the plating apparatus. In the plating process (plating method) according to the present invention, even when decomposition or contamination of the plating liquid occurs, the amount of the plating liquid to be replaced can be made small.

In addition, the voltage and voltage application time applied between the to-be-plated surface W and the anode electrode 5 can be set suitably according to the dimension of the semiconductor wafer 1 or the dimension of a plating process tank. Specifically, a voltage is applied for 25 minutes while controlling the current density at the surface to be plated W to be 20 mA or 10 to 50 mA per square centimeter. In addition, the electric density is sufficient if the current density is such that the desired purpose can be achieved.

Here, although a copper plating solution (Microfabric Cu 200 Nippon Electroplating Engineers) was used as a plating liquid, it is not limited to this, If it is a liquid which can achieve desired performance other than this, it will be limited to this. Of course not. As the plating liquid, for example, Uemura Industrial Co., Ltd. Lefco EX may be used.

In the peeling process, as shown in FIG. 13F, the photoresist layer 18 formed on the semiconductor chip 41 after the plating process is peeled off. Specifically, the semiconductor wafer including the semiconductor chip 41 shown in FIG. 13E is introduced into a peeling apparatus (not shown). Then, the semiconductor wafer is immersed in a stripping solution (manufactured by Tokyo Oka; trade name 104 stripping solution) for 70 degrees to 20 minutes, and shaken irregularly. As a result, the captive resist layer 18 formed on the surface of the semiconductor wafer is peeled off.

Here, in the peeling process, the semiconductor wafer 1 is immersed in said 104 peeling liquid for 70 degreeC-20 minutes, and is shaken irregularly. However, immersion time is not limited to this, For example, immersion for 15 to 25 minutes may be sufficient. As the stripping solution, for example, Mitsubishi Gas Chemical Co., Ltd. R-100 may be immersed at 50 ° C. for 8 to 15 minutes and shaken irregularly. Or you may use acetone as stripping liquid.

Next, in the etching step, as shown in FIG. 13G, the seed layer 19 on which the wiring plating layer 16 is not formed is removed by etching. Specifically, the semiconductor wafer 1 including the semiconductor chip 41 shown in FIG. 13F is placed in an etching apparatus not shown. The semiconductor wafer 1 was then immersed in a 10% aqueous ammonium persulfate solution at 25 ° C. for 1 minute and 30 seconds, and the copper (Cu) other than the copper plated wiring portion (wiring plated layer 16). The seed layer 19 which consists of (the seed layer 19 in which the wiring plating layer 16 was not formed in the surface) is etched.

Here, in an etching process, it is assumed that a semiconductor wafer is advanced, immersing in 25 degreeC 10-% ammonium persulfate aqueous solution for 1 minute 30 second. However, the aqueous solution used for etching is not limited to this, For example, 10%-sodium hydroxide aqueous solution, 40%-ferric chloride aqueous solution, and other aqueous solution may be sufficient. In addition, the temperature of aqueous solution is not limited to this, 15 degreeC-40 degreeC may be sufficient.

In the etching step, the semiconductor wafer is then immersed in 90% of 25% -TMAH for 1 hour. Thereby, the titanium layer (titanium layer in which the wiring plating layer 16 was not formed in the surface) other than a copper plating wiring part (wiring plating layer 16) is etched.

Here, in order to etch a titanium layer, it is made to advance, immersing in 25% -TMAH of 90 degreeC for 1 hour. However, the aqueous solution used for etching the titanium layer is not limited to this, and for example, a mixed solution of hydrochloric acid, hydrofluoric acid and nitric acid may be used.

Thus, the external connection terminal is provided in the semiconductor chip 41 in which the wiring plating layer 16 was formed on the semiconductor wafer. Hereinafter, the external connection terminal attachment process for attaching the external connection terminal to the semiconductor chip 41 on which the wiring plating layer 16 is formed will be described in detail with reference to FIGS. 14A to 14D. 14A to 14D are cross-sectional views illustrating an external connection terminal installation step of providing the external connection terminal 34 to the semiconductor chip 41 on which the wiring plating layer 16 is formed.

The external connection terminal installation step includes an overcoating layer forming step in which the wiring plating layer 16 forms an overcoating layer on the surface of the semiconductor chip 41, an overcoating layer pattern forming step of forming an arbitrary shape pattern on the overcoating layer, and The external connection terminal formation process of forming an external connection terminal in the wiring plating layer 16 based on the pattern shape of a coating layer is included. 14A shows a schematic configuration of a part of the semiconductor chip 41 on which the wiring plating layer 16 is formed before the overcoating layer forming step, and FIG. 14B shows a schematic configuration of a part of the semiconductor chip 41 after the overcoating layer forming step. 14C shows a schematic configuration of a part of the semiconductor chip 41 after the overcoating layer pattern forming step, and FIG. 14D shows a schematic configuration of a part of the semiconductor chip 41 after the external connection terminal forming step.

As shown in FIG. 14A, in the semiconductor chip 41 having the wiring plating layer 16 formed on the semiconductor wafer 1, the seed layer below the wiring plating layer 16 (the side on which the pad 17 is formed). (19) is formed. The wiring plating layer 16 is electrically connected to the pad 17 formed on the semiconductor chip 41 via this seed layer 19.

As shown in FIG. 14B, in the overcoating layer coating step, the overcoating layer 33 is formed on the semiconductor wafer including the semiconductor chip 41 on which the wiring plating 16 is formed. Specifically, the overcoating layer 33 (Sumitomo Bakelite product; trade name CRC-8000 series) is applied by rotation coating for 30 seconds at 1500 rotations per minute with a rotary coating device, and heated at 130 ° C. for 5 minutes.

Here, the CRC-8000 series is used as the overcoat layer 33 in the overcoat layer coating step. However, the material used for the overcoating layer 33 is not limited to this, For example, Hitachi Chemicals; The brand name HD-8800 series may be sufficient. As the overcoat layer 33, a photosensitive heat resistant resin such as a brand name HD-8000 series may be used.

In addition, in the said overcoating layer application | coating process, it rotates for 30 second by 1500 rotations per minute with a rotation coating apparatus, and is heating at 130 degreeC for 5 minutes. However, the coating method of the overcoat layer is not limited to this, for example, after rotating the semiconductor wafer until it becomes a sufficiently uniform film thickness at 1000 to 3000 revolutions per minute, for example, 5 minutes at 120 to 140 ° C. You may heat to a degree.

As shown in FIG. 14C, in the overcoating layer pattern forming step, a pattern having an arbitrary shape is formed on the overcoating layer 33. Specifically, after the overcoating layer coating step, the semiconductor wafer including the semiconductor chip 41 is set in an exposure apparatus not shown. And the g-line (436 nm) is irradiated to the overcoat layer 33 with an exposure apparatus. Thereafter, the overcoat layer 33 is developed with a 2.38% -TMAH aqueous solution by a developing device (not shown), and the overcoat layer 33 corresponding to the portion forming the external connection terminal is removed. And after removal, hardening process is performed for 2 hours in nitrogen atmosphere of 300 degreeC. By this overcoat layer pattern formation process, in the semiconductor chip 41, the wiring plating layer 16 is exposed in the part which forms an external connection terminal.

Here, in the said overcoat layer pattern formation process, g line (436 nm) is irradiated to the overcoat layer 33 with the exposure apparatus. However, the light irradiated to the overcoat layer 33 is not particularly limited as long as it is light that can expose the overcoat layer. As light to irradiate the overcoat layer 33, i line | wire (365 nm) and deep ultraviolet ray (about 200-300 nm) may be sufficient, for example.

In the overcoating layer pattern forming step, the overcoating layer 33 is developed with a 2.38% -TMAH aqueous solution. However, the concentration of the TMAH aqueous solution is not limited to this. For example, the concentration of the TMAH aqueous solution may be 1 to 3%. Moreover, you may dilute 25% -TMAH aqueous solution with pure water to the density | concentration suitable for image development.

In addition, in the said overcoat layer pattern formation process, after removing the overcoat layer 33 corresponding to the part which forms an external connection terminal, it hardens for 2 hours in nitrogen atmosphere of 300 degreeC. However, the process after removing an overcoat layer is not limited to this. For example, after removing an overcoat layer, the process which has a holding time of 1.5 hours-3 hours at 250-350 degreeC may be sufficient. Moreover, you may have a temperature rising process and a temperature decreasing process before and behind the process.

As shown in FIG. 14D, in the external connection terminal formation step, the external connection terminal 34 is formed in the portion from which the overcoat layer 33 is removed in the overcoating layer pattern formation step. Specifically, a semiconductor wafer including the semiconductor chip 41 is provided in a ball mounter (not shown). And the flux which is not shown in figure is apply | coated to the part to which the wiring plating layer 16 for external connection terminal formation was exposed. And the solder ball as an external connection terminal 34 hold | maintained by the tool which is not shown in figure in which the flux was apply | coated is provided. Thereafter, the semiconductor wafer including the semiconductor chip 41 provided with the solder balls is re-melted and cooled by the reflow apparatus at 245 ° C. to thereby serve as the external connection terminals 34 on the wiring plating layer 16. Join the solder balls.

Here, the solder ball as the external connection terminal 34 consists of SnAg3.0Cu0.5 (Senju Metal Industry make; brand name M705). However, a solder ball is not limited to this, For example, you may consist of Sn63Pb37. It may also be made of other lead-free.

In addition, in the said external connection terminal formation process, the heating temperature by a reflow apparatus is set to 245 degreeC. However, the heating temperature by a reflow apparatus is not limited to this, For example, 240-250 degreeC may be sufficient.

As described above, in the plating apparatus of the present invention, a partition wall is formed between the plated substrate and the anode electrode in a plating treatment tank, and the anode electrode and the plated substrate are isolated by the partition wall, and the plating process is performed. The jaw is divided into a substrate chamber to be plated and an anode electrode chamber. Further, in the plating method of the present invention, as described above, the plating liquid and the electrolyte are introduced into the plating treatment tank, and the sorting of the plating liquid is brought into contact with the plated surface of the substrate to be plated from below, and the anode disposed in the plating treatment tank. While flowing electrolyte into the electrode, the anode electrode and the plated substrate are energized, the anode electrode and the plated surface are separated by a partition wall in the plating chamber, and the plating is performed by dividing the plated chamber chamber and the anode electrode chamber. to be.

Therefore, contamination of the plating surface by the particle | grains etc. which originate in an anode electrode can be prevented, and the fall of plating quality by the minute solid foreign material resulting from a black film etc. can be prevented, without impairing operability.

In addition, the manufacturing method of the semiconductor device of this invention is a structure using the said plating apparatus as mentioned above. Moreover, the manufacturing method of the semiconductor device of this invention is a structure containing the said plating method as a plating process.

Therefore, it becomes possible to obtain the semiconductor device provided with the high quality plating wiring, without adhering the minute solid foreign material resulting from the black film etc. of the anode electrode surface.

Moreover, in the plating apparatus of this invention, it is preferable that the electrolyte solution which flows into the said anode electrode chamber does not reach the said to-be-plated substrate chamber.

The electrolyte flowing into the anode electrode chamber is supplied with electricity between the anode electrode and the substrate to be plated, thereby obtaining an electrolyte solution containing particles caused by the anode electrode. This electrolyte solution is passed through the partition wall, and particle | grains are removed. For this reason, according to the said structure, the particle | grains resulting from an anode electrode do not reach a to-be-plated surface. Therefore, contamination of the plating surface by a particle can be prevented.

Moreover, in the plating apparatus of this invention, it is preferable that the electrolyte solution outlet which flows out the electrolyte solution which flows into the said anode electrode chamber outside the said plating process tank is further formed.

In the above configuration, the electrolyte flows into the anode electrode in the plating treatment tank, while the electrolyte flows out from the electrolyte treatment outlet in the state where the electrolyte flows out of the plating treatment tank. For this reason, according to the said structure, it becomes possible to flow out the particle | grains resulting from an anode electrode to the exterior of a plating process tank, and can always supply the electrolyte solution which the particle | grains were reduced to the anode electrode chamber continuously.

Moreover, in the plating apparatus of this invention, a part or all part of the part which isolate | separates the said anode electrode containing the said partition and the said to-be-plated board | substrate in the said plating process tank carries out ion in electrolyte solution in the state which was immersed in electrolyte solution. It is preferable that it consists of a permeable permeable member.

According to the above structure, since the permeable member permeates ions in the electrolyte solution in the state immersed in the electrolyte solution, when a voltage is applied to the electrolyte solution, the ions in the electrolyte solution permeate the permeable member. On the other hand, particles caused by the anode electrode do not penetrate the transmission member. Therefore, according to the above configuration, it becomes possible to separate ions and particles with respect to the electrolyte solution introduced into the anode electrode.

In addition, the transmissive member may be a semipermeable membrane.

In addition, the permeable member may contain an ion exchange resin.

Moreover, in the plating apparatus of this invention, it is preferable to further provide the to-be-plated board | substrate chamber abolition means which closes the said to-be-plated board | substrate chamber.

According to the above constitution, since the to-be-plated substrate chamber closing means closes the to-be-plated substrate chamber, the plating liquid flowing into the to-be-plated liquid chamber is blocked from the atmosphere outside the plating process tank. Accordingly, in the plating treatment in the plating treatment tank, contamination of the plating treatment tank due to evaporation of the plating liquid can be prevented. In addition, it is possible to prevent the concentration variation of the plating liquid accompanying the evaporation of the plating liquid.

In addition, in the plating apparatus of the present invention, a plating liquid supply source for storing a plating liquid supplied to the substrate to be plated, a plating solution system for circulating a plating liquid between the plating liquid supply source and the substrate to be plated, and the anode electrode It is preferable to provide the electrolyte solution source which stores the electrolyte solution to supply to a chamber, and the electrolyte system which circulates electrolyte solution between the said electrolyte solution source and the said anode electrode chamber.

Moreover, in the plating apparatus of this invention, it is preferable to further provide the replenishment liquid system which controls the density | concentration of the plating liquid circulating the said plating liquid system, and replenishes a replenishment liquid according to the density information of the plating liquid.

The plating liquid contains a component necessary for metal plating. The "concentration information of the plating liquid" refers to the concentration information of various components required for metal plating contained in the plating liquid. In addition, the "supplement liquid" refers to a high concentration solution of various components in such a plating liquid. In addition, with various components in a plating liquid, sulfuric acid, copper, chlorine, an additive, etc. are illustrated when copper plating is performed, for example.

According to the above configuration, the replenishment system replenishes replenishment liquid in accordance with the concentration information of the plating liquid. That is, the replenishment system replenishes the replenishment liquid when various components in the plating liquid fall below a certain management range. Therefore, according to the said structure, it becomes possible to supply the plating liquid of stable density | concentration to a plating process tank.

Moreover, in the plating apparatus of this invention, it is preferable that the said plating liquid system and the said electrolyte system are each a closed system.

Thereby, contamination of the atmosphere accompanying evaporation of the plating liquid and electrolyte which circulates the said plating liquid system and the said electrolyte system can be prevented. In addition, it is possible to prevent concentration fluctuations of the plating liquid and the electrolyte accompanying the evaporation of the plating liquid and the electrolyte.

Moreover, it is preferable that the said plating liquid contains a copper component and is also a conductive liquid.

There are various plating solutions in the plating solution to form various metals. According to the said structure, copper plating can be formed in the to-be-plated surface of a to-be-plated board | substrate by using the plating liquid containing copper. In addition, a "copper component" refers to a compound containing metal copper, copper ions, or copper ions. Moreover, especially when the said plating liquid contains the copper component of 14g or more and 40g or less with respect to 1 liter of plating liquids, especially a favorable plating state can be implement | achieved.

Moreover, it is preferable that the said anode electrode is a soluble anode electrode which consists of phosphorus containing copper containing phosphorus.

When a positive electrode containing pure copper is used as the positive electrode, the amount of foreign matter generation from the positive electrode increases. On the other hand, according to the above configuration, since the anode electrode is a soluble anode electrode made of phosphorus-containing copper, a black film called a black film is formed on the surface of the anode electrode, thereby trapping copper complex ions (Cu ⁺ ) that cause foreign matter. . Preferably, the content of phosphorus is 0.04 to 0.06%.

In addition, in order to prevent adhesion of the minute solid foreign substances resulting from a black film etc. conventionally, it was necessary to use an insoluble electrode. For this reason, there existed a problem that plating quality fell by the increase of the additive consumption amount by the oxidative decomposition of the additive in a plating liquid, or the contamination of the plating liquid by the decomposition product.

In the present invention, even when a soluble anode electrode made of phosphorus-containing copper is applied, the particles caused by the anode electrode are removed by the partition walls, so that it is possible to prevent the adhesion of minute solid foreign substances caused by the black film or the like. Done.

As described above, "electrolyte" refers to a solution that does not contain a substance acting on the surface to be plated of the substrate to be plated. Specifically, electrolyte solution refers to the solution which does not contain the metal (for example, copper in case of copper plating) desired in a plating process. On the other hand, a plating liquid means the solution containing a desired metal. In addition, electrolyte solution and plating liquid are common in the point which has electroconductivity.

More specifically, when a solution containing copper sulfate is used as the plating solution, the electrolyte solution is preferably sulfuric acid or an aqueous solution in which sulfuric acid is diluted.

Moreover, in this invention, even if the electrolyte solution is a solution containing a desired metal, or the same solution as a plating liquid, it becomes possible to prevent adhesion of the micro solid foreign material resulting from a black film. This is because even if a substance which adversely affects plating is formed on the surface of the anode electrode, since it is blocked by the partition wall, it is possible to prevent the adverse effect on the surface to be plated.

That is, the said electrolyte solution contains a copper component and may be an electroconductive liquid.

Moreover, the said electrolyte solution may contain the copper component of 14g or more and 40g or less with respect to 1 liter of electrolyte solution.

In the plating apparatus of the present invention, the substrate to be plated may be a semiconductor wafer. As a result, it provides a semiconductor device and a method of manufacturing the same, without deteriorating the plating quality due to a fine solid foreign substance due to a black film or the like, without impairing the operability of the face-down type plating apparatus, and the like. Evaporation and mist generation can also be prevented.

Moreover, in the plating method of this invention, it is preferable to perform plating so that the electrolyte solution which flows into the said anode electrode chamber may not reach the said to-be-plated substrate chamber.

In the plating method of this invention, it is preferable to further include the outflow process which makes the electrolyte solution which flows into the said anode electrode chamber outflow to the exterior of the said plating process tank.

In the plating method of this invention, it is preferable to isolate | separate the said anode electrode and the said plating board | substrate with a partition provided with the permeable member which permeate | transmits the ion in electrolyte nucleus in the state immersed in electrolyte solution.

In the plating method of this invention, it is preferable to include the paper removal process which removes the said to-be-plated substrate chamber additionally.

In the plating method of the present invention, an electrolytic solution is additionally provided between the plating liquid supply source storing the plating liquid and the plating substrate chamber, a plating liquid circulation step of circulating the plating liquid, and an electrolyte solution source storing the electrolyte solution and the anode electrode chamber. It is preferable to include the electrolyte solution circulation process which circulates.

In the plating method of this invention, it is preferable that the said plating liquid circulation process includes the supply process which controls the density | concentration of a plating liquid, and replenishes a replenishment liquid according to the density information of a plating liquid.

Moreover, it is preferable that the manufacturing method of the semiconductor device of this invention includes the plating method mentioned above as a plating process in order to solve the said subject.

In the method for manufacturing a semiconductor device of the present invention, a photoresist is formed on a seed layer forming step of forming a seed layer on the surface to be plated of the substrate to be plated and the surface of the seed layer formed by the seed layer forming step before the plating step. It is preferable to further include the photoresist coating process to apply | coat, and the photoresist pattern formation process which forms a pattern shape by exposing and developing the said photoresist.

As mentioned above, the plating apparatus of this invention can prevent the fall of plating quality by the micro solid foreign material resulting from a black film etc., without impairing operability. For this reason, this invention is applicable to the semiconductor industry.

In addition, this invention is not limited to each structure demonstrated above, Various changes are possible in the range as described in a claim, and this invention also regarding the Example obtained by combining suitably the technical means respectively disclosed in the different Example. It is included in the technical scope.

In addition, the specific Example made in the column of detailed description of the invention is to clarify the technical scope of this invention to the last, and is not interpreted by consultation only to such a specific example, The spirit of this invention and the patent described below It can change and implement in various ways within a Claim.

According to the present invention, in a face-down type plating apparatus, a plating apparatus, a plating method, and a semiconductor device capable of preventing the deterioration of plating quality due to a fine solid foreign substance due to a black film or the like without impairing operability. It can provide a manufacturing method.

Claims (28)

A plating apparatus for plating a surface to be plated of a plated substrate, A plating treatment tank having an anode electrode formed therein; a plating solution and an electrolyte solution are introduced into the plating treatment tank, and a flow of plating solution is brought into contact with the surface to be plated of the substrate to be plated from below; Plating is conducted by energizing the anode electrode and the plated substrate while flowing the electrolyte solution therein, In the plating treatment tank, partition walls are formed between the substrate to be plated and the anode electrode. And the plated substrate is divided into a plated substrate chamber and an anode electrode chamber. The method of claim 1, Further comprising a plating liquid injection pipe for injecting a plating liquid to the surface to be plated of the substrate to be plated, The plating liquid injection tube is formed so as to penetrate the partition wall, and the plating liquid flows only into the substrate to be plated. The method of claim 1, Plating apparatus further comprises an electrolyte supply pipe for introducing the electrolyte to only the anode electrode chamber. The method of claim 1, An electrolytic solution flowing into the anode electrode chamber does not reach the plated substrate chamber. The method of claim 1, The plating apparatus characterized by the above-mentioned electrolyte outlet which flows out the electrolyte solution which flows into the said anode electrode chamber to the exterior of the said plating process tank. The method of claim 1, A part or all of the part which isolate | separates the said anode electrode containing the said partition and the said to-be-plated board | substrate from the said plating process tank consists of the permeable member which permeate | transmits the ion in electrolyte solution in the state immersed in electrolyte solution, It is characterized by the above-mentioned. Plating device. The method of claim 6, Plating apparatus, characterized in that the permeable member is a semipermeable membrane. The method of claim 6, The plating apparatus, wherein the permeable member comprises an ion exchange resin. The method of claim 1, And a plated substrate chamber closing means for closing the plated substrate chamber. The method of claim 1, A plating liquid supply source for storing a plating liquid supplied to the substrate to be plated, a plating solution system for circulating a plating liquid between the plating liquid supply source and the substrate to be plated; And an electrolyte solution source for storing the electrolyte solution to be supplied to the anode electrode chamber, and an electrolyte system circulating the electrolyte solution between the electrolyte solution source and the anode electrode chamber. The method of claim 10, And a replenishment solution system for controlling the concentration of the plating solution circulating in the plating solution system and replenishing the replenishment solution in accordance with the concentration information of the plating solution. The method of claim 10, The plating apparatus and the electrolyte solution system is characterized in that each closed system. The method of claim 1, The plating solution contains a copper component and is a conductive liquid. The method of claim 13, The said plating liquid contains the copper component of 14g or more and 40g or less with respect to 1 liter of plating liquids. The method of claim 1, The said anode electrode is a plating apparatus which is a soluble anode electrode which consists of phosphorus containing copper containing phosphorus. The method of claim 1, The electrolytic solution is sulfuric acid, or a plating apparatus, characterized in that the aqueous solution diluted with sulfuric acid. The method of claim 1, The electrolytic solution contains a copper component and is a conductive liquid. The method of claim 17, The said electrolytic solution contains 14 g-40 g of copper components with respect to 1 liter of electrolyte solution, The plating apparatus characterized by the above-mentioned. The method of claim 1, The plating apparatus, wherein the plated substrate is a semiconductor wafer. As a plating method of plating on the to-be-plated surface of a plating board | substrate, The plating solution and the electrolyte are introduced into the plating treatment tank, and the plating solution is brought into contact with the plated surface of the substrate to be plated from below, while the electrolyte is introduced into the anode electrode disposed in the plating treatment tank. Energized between the substrates to be plated, A plating method, wherein the anode electrode and the surface to be plated are separated by a partition wall in the plating treatment tank, and the plating is performed by dividing into a plating substrate chamber and an anode electrode chamber. The method of claim 20, The plating method characterized by plating so that the electrolyte solution which flows into the said anode electrode chamber does not reach the said to-be-plated substrate chamber. The method of claim 20, A plating method further comprising an outflow step of flowing the electrolyte flowing into the anode electrode chamber out of the plating treatment tank. The method of claim 20, A plating method comprising: separating the anode electrode and the plating substrate by forming a barrier rib having a permeable member that transmits ions in the electrolyte solution in the state immersed in the electrolyte solution. The method of claim 20, A plating method further comprising a closing step of abolishing the substrate chamber to be plated. The method of claim 20, A plating liquid circulation step of circulating a plating liquid between a plating liquid supply source for storing a plating liquid and the plated substrate chamber; A plating method further comprising an electrolyte solution circulation step of circulating an electrolyte solution between an electrolyte solution source for storing an electrolyte solution and the anode electrode chamber. The method of claim 25, The plating liquid circulation step includes a replenishing step of controlling the concentration of the plating liquid and replenishing the replenishment liquid in accordance with the concentration information of the plating liquid. The manufacturing method of the semiconductor device containing the plating method of Claim 20 as a plating process. The method of claim 27, Before the plating process, A seed layer forming step of forming a seed layer on the surface to be plated of the substrate to be plated; A photoresist coating step of applying a photoresist to a surface of the seed layer formed in the seed layer forming step; And a photoresist pattern forming step of forming a pattern shape by exposing and developing the photoresist.

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