M333417 . ....... . ι 八、新猶說明( 新型所屬之技術領域 本新型是有關於一種電漿清潔裝置，且特別是有關於 【先前技術1丨 傳統上，半導體產業需使用大量的水來清洗晶圓，且 在半導體製程朝课次微米〇·18μιη以下領域發展的過程中， 晶圓本身之潔淨度要求更不斷提高。一般而言，致命缺陷 (Killer Defect)的大小約為線徑之—半，因此以〇 25叫的製 程而a ’僅可容忍〇· ι25大小微粒，而〇· j g啤的製程則 更小至0.09 mm，因而溼洗移除極小微粒的能力大受考驗。 然而’邊著晶圓上的溝槽的深長化，使得 難自溝槽移除，研發傳統渔式清洗的替代技術，在所難免。 再者目4半導體重要技街 的材質來取价 質’ _有極大的可能是以有機薄膜作為新的介電材 〆目A溼式清洗機制卻是去徐有機污染物，對溼式清洗來 說’如何不傷害有機的介電材質已成為莫大的挑戰 相近4· 以電浆清潔方法為例，電浆清潔原理 製程中^ 目前已使用於IC封裝和液晶模组（LCM) 在清洗即具有相當麵力，因而容易 麥,/月潔標的物（晶圓或晶片），例如可能燒壞 M333417 電路 晶圓表面或燒毁晶片上的Ic 【新型内容 因此本新型之一方面係在於提供一種電將决吻 藉以連績地進行電漿清潔〆^ ^潔裝置 籍 本新型之又一方面係在於提供一籀將、、主 ^ ^ Jt ^ ^ ^ S ^^ ^ 4. 藉 ^ 面係在於提供一種電漿清東ι 以選擇性使甩遠距電漿或直接雷 电果次直接電漿來進行電漿清潔。 “_之實_ 面’電愚清潔裝置 極。輸送 碧係卞置於腔體内，並形成一電裝^M333417 . . . . ι 八,新犹说明(New technology area) This new type is related to a plasma cleaning device, and especially related to [previous technology 1 丨 traditionally, the semiconductor industry needs to use A large amount of water is used to clean the wafers, and the cleanliness requirements of the wafer itself are constantly increasing during the semiconductor manufacturing process in the field of the following micron 1818μιη. In general, the size of the Killer Defect is about It is the half of the wire diameter, so the process of 〇25 is called a 'only can tolerate 〇· ι25 size particles, while the process of 〇·jg beer is smaller to 0.09 mm, so the ability to remove very small particles by wet washing is large. It is tested. However, 'the deepening of the groove on the wafer makes it difficult to remove the groove. It is inevitable to develop an alternative technology for traditional fish cleaning. The price ' _ has a great possibility to use organic film as a new dielectric material. A wet cleaning mechanism is to remove organic pollutants. For wet cleaning, 'how to not harm organic dielectric materials has become Great choice Similar 4· Taking the plasma cleaning method as an example, the plasma cleaning principle process is currently used in IC packaging and liquid crystal module (LCM). It has considerable force in cleaning, so it is easy to use wheat, Circle or wafer), for example, may burn out the surface of the M333417 circuit wafer or burn the Ic on the wafer. [New content, therefore, one aspect of the present invention is to provide a kind of electricity to make a kiss to make a plasma cleaning. Another aspect of the present invention is to provide a ^,^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Or direct lightning electric fruit direct plasma to clean the plasma. "_实实_面' electric fool cleaning device pole. Conveying Bi system is placed in the cavity, and form a battery ^
間其Ψ局清潔標的物在腔體内進 放電電辉I 對於清潔標的物之被清潔表面。 又’根據本新型之實施例，本新型之電漿清潔裝置係 用以清潔至少一清潔標的物，其中清潔標的物具貪^ 潔表面，電漿清潔裝置至少包含有腔體、輸送裝置及至少 一側放電電極組。輸送裝置係用以輪送清潔樣的物至腔體 内’側放電電極組設置於腔體内，侧放電電極組設有二相 對之侧放電電極，並形成電聚放電區於此些侧放電電極之 間’其中當清潔樣的物在腔體内進行清潔時，侧放電電極 組係位於清潔標的物之一侧，且此些側放電電極之間所形 7 M333417 成之電嚴未直接面對於清潔標的物之被清潔表面。八 潔過程，且在清潔過程中可避免清潔標的物容易被燒傷的 情形。再者，本新型之電漿请潔裝置可根據请潔需米來選 擇性使用遠距電漿或直接電漿來進行電衆清潔^ ' _ ...... .- , . , .... ,' : ....... .......-' . ....... ......' . . . ；. 【實施方式】 為讓本新型之上述和其他目的、特徵、優點與實施例 能更明顯易懂，本說明書將特舉出一系列實施例來加以說 明。但值得注意的是，此些實施例只是用以說明本新型之 實施方式，而非用以限定本新型广 請參照第1圖和第2圖，第1圖係繪示依照本新型t 第”實施例之電漿清潔裝置的正面示意齓t 依照本新型之第一實施例之電漿清潔裝置的俯視示意爾; 本實施例之電漿清潔裝置1 〇〇係用以清潔至少一清潔標的 物200 ’例如·晶圓、晶片或電路板，其中清屬 具有一被清潔表面201，其需藉也 潔裝置100包含有腔體110、輸送裝 極ί30及電漿電源供應器刚。輸送裝置丨加 潔標的物200至腔體110，以進行请潔_ 係設置於腔體110内，並形成電漿放電區&於侧放電電極 130之間’以產生電漿來清潔此清潔標的物2〇〇，其中當清 潔標的物200在腔體11〇内進行清潔時，此些側放電電極 130係分別位於清潔標的物200的相對兩側，且未直接面對 於清潔標的物200的被清潔表面2〇1，例如當進行清潔時^ M333417 此些側放電電極130係分別位於清潔標的物200的左、右 兩側。電敗電源供應器140係電性連接於此些侧放電電極 130，用以提供此電漿故電區a —電位差，以產生電漿。 如第1圖所示，本實施例之腔體110内的壓力係實質 介於O.OOlTorr與760Torr之間，亦可大於760Torr，亦即本 實施例之電漿清潔裝置100可在常壓或低壓條件下進行電 漿清潔過程。腔體110設有氣體入口 111和氣體出口112 , 氣體入口 111係用以係用以導入工作氣體於腔體110内， 例如氬氣、氦氣以及氖氣等惰性氣體，亦可為能進行電漿 化學反應的氣體，例如氧氣、氮氣、水氣、碳氫氧氟化合 物、矽化合物等具有活性的氣體分子;或者，工作氣體為 上述之情性氣體與具有活性之氪體依需求以預設比例混合 而成。氣體出口 112係用以排出工作氣體於腔體110外， 以維持腔體110内的電漿工作條件。 如第1圖和第2圖所示，在本實施例中，輸送裝置120 可一滑執，而清潔標的物200係承置於滑軌上，以输送入 腔體110内，且此滑軌較佳可對應於清潔標的物200來調 整寬度。然不限於此，输送裝置120亦可例如一機械手臂， 以輸送清潔標的物200至腔體110内進行清潔，並可在清 潔完成後取出清潔標的物200十 如第1圖所示，本實施例之側放電電極130可例如為 中空陰極、電極組、電感偶合式電聚（Inductively-Coupled Plasma ; ICP)電極或平板電極，其設置於腔體110，且未直 接面對清潔標的物200的被清潔表面201，避免此些側放電 電極130之間所產生之電漿直接轟擊此被清潔表面201，而 M333417 燒傷清潔標的物200。在本實施例中，清潔標算 --. ..' - ... .： :_ ... . - 「 .--- 兩側’並形成電漿放電區a於此些側放電電極no之間。 面/.201^ 進行清潔時，側故電電極13〇的表面可形成介身^ 充足的電漿來均勻地清潔清潔標的物2〇〇 ^ 如第1圖和第2圖所示，本實施例之| 區a中游離化而產生電聚^ 當本實施例之電漿清潔裝置100對清潔標的物200之 被清潔表面201進行清潔時，首先，輸送裝置12〇可輸送 ^ M m ^ 200 ^ ^ ^ !! 〇 ^ 0 ,b Bf , ^ # 200 ^ 被清潔表面201未直接面對於側放電電極130。接著，關閉 腔體110,並產生電漿於在電漿放電區3中，以清潔清潔標 的物200。此時’側放電電極13〇之間所形成之電漿可擴散 M333417 至被清潔表面2 01，以間接清潔此被清潔表面2〇1。在電葉 清潔完成後，開啟腔體110，並藉由輪送裝 潔標的物200。在清潔標的物2〇〇取出後，輸送裝置 可再輸送清潔標的物200至腔體】1〇内，以重複地進行電 襞清潔過程，因而本實施例之電漿清潔裝置丨， 續式清潔過程，以連續清潔清潔標的物2〇〇。 f 因此，本實施例之電衆清潔裝置丨〇〇可連續地清潔清 潔標的物200，且由於侧放電電極13〇未直接面對於清潔標 的物200的被清潔表面201，因而可避免清潔樑的物 容易被燒傷的情形 請參照第3A圖和第3B圖，其·示依照本新型之第二 實施例之電漿清潔裝置的正面示意圖。以下僅就本實施例 與第一實施例之相異處進行說明，關於相似處在此不再資 遂。相較於第一實施例，第二實施例之電漿清潔裝置1〇〇& 更設有二放電電極150,此些放電電極mo可例如為中空陰 極、非中空陰極、電感偶合式電漿電極或平板電板 當清潔標的物200在腔體110内進行清潔時^此 極150儀分別位於清潔標的物2〇〇的另相對兩侧，且直接 面對於清潔標的物200的被清潔表面201，例如當進行清 潔’且清潔標的物200的被清潔表面2〇1朝上時，放電電 極150可分別位於清潔樣的物200的上、下兩側，用以藉 由直接電漿(Direct Plasma)來清潔被清潔表面2〇1，以清潔 特定難以消除的污染物（例如有機污染物）。值得注意的是， 此時，側放電電極i30和放電電極15〇可電性連接於 電漿電源供應器140 ;或者，侧放電電極13〇和放電電極 11 M333417 15〇可分別電性連接於不同的電漿電源供應器^ 放電電極130係電性連揍於一第一電敗電源供應器141，而 放電電極150係電性連接於一第二電漿電源供應器j42，从 分別獨立操作側放電電極130和放電電極150。當進行電漿 清潔時，可依清潔需求來同時啟動側放電電極13〇和放電The cleaning target in the chamber is discharged into the chamber to clean the surface of the object to be cleaned. In addition, according to an embodiment of the present invention, the plasma cleaning device of the present invention is for cleaning at least one cleaning target, wherein the cleaning target has a scouring surface, and the plasma cleaning device comprises at least a cavity, a conveying device and at least One side discharge electrode group. The conveying device is configured to rotate the cleaning sample into the cavity, and the side discharge electrode group is disposed in the cavity, and the side discharge electrode group is provided with two opposite side discharge electrodes, and the electropolymerization discharge region is formed to discharge on the sides. Between the electrodes, wherein when the cleaning sample is cleaned in the cavity, the side discharge electrode group is located on one side of the cleaning target, and the shape of the 7 M333417 between the side discharge electrodes is not directly For cleaning the surface of the object to be cleaned. During the cleaning process, it is possible to avoid the situation where the cleaning target is easily burned during the cleaning process. Furthermore, the plasma cleaning device of the present invention can selectively use remote plasma or direct plasma to clean the electricity according to the cleaning demand. ^ _ ...... .- , . , .. .. , ' : ....... .......-' . ................................ [Embodiment] To make this new type The above and other objects, features, advantages and embodiments will be more apparent and understood. However, it is to be noted that the embodiments are merely illustrative of the embodiments of the present invention, and are not intended to limit the present invention. Referring to FIG. 1 and FIG. 2, FIG. 1 is a diagram of the present invention. The front view of the plasma cleaning device of the embodiment is a top view of the plasma cleaning device according to the first embodiment of the present invention; the plasma cleaning device 1 of the present embodiment is used to clean at least one cleaning target 200 ', for example, wafer, wafer or circuit board, wherein the clearing has a cleaned surface 201, and the cleaning device 100 includes a cavity 110, a transport device 355, and a plasma power supply. The standard object 200 is added to the cavity 110 to be disposed in the cavity 110, and a plasma discharge zone & is formed between the side discharge electrodes 130 to generate plasma to clean the cleaning target 2 That is, when the cleaning target 200 is cleaned in the cavity 11〇, the side discharge electrodes 130 are respectively located on opposite sides of the cleaning target 200, and are not directly facing the cleaned surface of the cleaning target 200. 2〇1, for example when clearing When the M313417 side discharge electrodes 130 are respectively located on the left and right sides of the cleaning target 200, the electrical power supply 140 is electrically connected to the side discharge electrodes 130 for providing the plasma electrical region. A-potential difference to generate a plasma. As shown in Fig. 1, the pressure in the cavity 110 of the present embodiment is substantially between 0.001 Torr and 760 Torr, and may be greater than 760 Torr, that is, the power of the embodiment. The slurry cleaning device 100 can perform a plasma cleaning process under normal pressure or low pressure conditions. The cavity 110 is provided with a gas inlet 111 and a gas outlet 112 for introducing a working gas into the cavity 110, for example. An inert gas such as argon gas, helium gas or helium gas may also be a gas capable of performing a plasma chemical reaction, such as an oxygen gas, a nitrogen gas, a water vapor, a hydrocarbon oxyfluoride compound, a hydrazine compound, or the like; or The gas is formed by mixing the above-mentioned inert gas with the active carcass in a predetermined ratio according to the demand. The gas outlet 112 is for discharging the working gas outside the cavity 110 to maintain the plasma working condition in the cavity 110. As number 1 As shown in FIG. 2 and FIG. 2, in the embodiment, the conveying device 120 can be slid, and the cleaning target 200 is placed on the sliding rail for feeding into the cavity 110, and the sliding rail is preferably The width is adjusted corresponding to the cleaning target 200. However, the conveying device 120 may also be, for example, a robot arm to convey the cleaning target 200 to the cavity 110 for cleaning, and the cleaning target 200 may be taken out after the cleaning is completed. As shown in FIG. 1 , the side discharge electrode 130 of the present embodiment may be, for example, a hollow cathode, an electrode group, an Inductively-Coupled Plasma (ICP) electrode or a plate electrode, which is disposed in the cavity 110. And the cleaning surface 201 of the cleaning target 200 is not directly faced, and the plasma generated between the side discharge electrodes 130 is prevented from directly bombarding the surface to be cleaned 201, and the M333417 burns the cleaning target 200. In the present embodiment, the cleaning standard -. ..' - ... .: : _ ... . - " .--- both sides 'and form the plasma discharge area a of these side discharge electrodes no Between the surface /.201^ When cleaning, the surface of the electrode 13〇 can form a body ^ sufficient plasma to evenly clean the cleaning target 2 〇〇 ^ as shown in Figures 1 and 2 When the plasma cleaning device 100 of the present embodiment cleans the surface to be cleaned 201 of the cleaning target 200, first, the conveying device 12 can transport ^ M m ^ 200 ^ ^ ^ !! 〇 ^ 0 , b Bf , ^ # 200 ^ The cleaned surface 201 is not directly facing the side discharge electrode 130. Next, the cavity 110 is closed and plasma is generated in the plasma discharge region 3 In order to clean and clean the target 200. At this time, the plasma formed between the side discharge electrodes 13 可 can diffuse M333417 to the surface to be cleaned 210 to indirectly clean the surface to be cleaned 2〇1. Thereafter, the cavity 110 is opened, and the cleaning target 200 is sent by the wheel. After the cleaning target 2 is taken out, the conveying device can further convey the cleaning target 200 to In the first step, the electric cleaning process is repeated, so that the plasma cleaning device of the present embodiment 丨, the continuous cleaning process, continuously cleans the cleaning target 2〇〇 f. Therefore, the electric consumer of the embodiment The cleaning device 丨〇〇 can continuously clean the cleaning target 200, and since the side discharge electrode 13 〇 is not directly facing the cleaned surface 201 of the cleaning target 200, it is possible to avoid the situation in which the cleaning beam is easily burned. 3A and 3B, which are front views showing a plasma cleaning apparatus according to a second embodiment of the present invention. Only the differences between the present embodiment and the first embodiment will be described below, and the similarities are here. Compared with the first embodiment, the plasma cleaning device 1 〇〇 & of the second embodiment is further provided with two discharge electrodes 150, such as a hollow cathode, a non-hollow cathode, The inductively coupled plasma electrode or the flat panel is cleaned when the cleaning target 200 is cleaned in the cavity 110. The pole 150 is located on the opposite sides of the cleaning target 2〇〇, and directly faces the cleaning target 200. of When the surface 201 to be cleaned, for example, when cleaning is performed and the surface to be cleaned 2〇1 of the cleaning target 200 faces upward, the discharge electrodes 150 may be respectively located on the upper and lower sides of the cleaning object 200 for direct electricity Direct Plasma cleans the surface 2〇1 to clean certain hard-to-eliminate contaminants (such as organic contaminants). It is worth noting that at this time, the side discharge electrode i30 and the discharge electrode 15 are electrically connected. The plasma power supply 140; or, the side discharge electrode 13〇 and the discharge electrode 11 M333417 15〇 can be electrically connected to different plasma power supply devices respectively. The discharge electrode 130 is electrically connected to a first electrical failure. The power supply 141 is electrically connected to a second plasma power supply j42, and the side discharge electrode 130 and the discharge electrode 150 are independently operated from the side. When performing plasma cleaning, the side discharge electrode 13 放电 and discharge can be simultaneously activated according to the cleaning demand.
電極150，或個別選择切換側放電電極13〇和放極 150。因此，第二實施例之電漿清潔裝置1〇(^可選擇性地 籍由遠距電漿或直接電料Direct Plasm分 請參照第4圖，其繪示依照本新型之第三實施例之電 漿清潔裝置的正面示意圖。以下僅就本實施例與第二實施 例之相異處進行說明，關於相似處在此不再贅述。相較於 第二實施例，第三實施封之電漿清潔裝置W %控制單兀160 ’用以當進行電漿清潔時對電漿施^ 以埠一步控制電衆的運動，其中磁場可選擇施加於侧放電 電極ΐ3α或放電電極15^ 部，以觸^ 上的特定民_ 預期的區域（例如電路區域)。 _請參照第从圖# t UM ^ t ^ £ 6¾ it φ τρ： ^ g 0 ^ 處在此不再贅述。相較於篦—參二丄 、弟實轭例或第二實施例，當清 潔標的物200在腔體11〇内.主 * 胳生、切壯® 進仃/月潔時，第四實施例之電 漿 >月 >糸裝置100c的側放電電極 ϋΛϋ m 130係同時位於清潔標的 物200之相同一侧（任何一侧 呈n w几至相對設置，因而形成至 12 M333417 ' .: : - ' .. . .... ... . . . . .: . . . . ' ； ' ·. ' . ’ .. .... .... ...... ，. . . ...:.... 义一侧放電電極組，此時，側放電電極13〇c之尉所^ ..... 電浆係屬遠距電漿，亦即耒直接面對於清潔標的物2敝 被清潔表面201。此時，側放電電極13〇()之間所形成之電 浆可斤散至被清潔表面2〇 1，以間接请潔此被清潔表面2^ ， 標的物容易被燒傷的倩形。 本新型，任何熟習此技藝者，在不脫離本新型之精神和範 圍内’當可作各種之更動與潤飾，因此本新型之保護範圍 . ... . - 當視後附之申請專利範圍所界定者為準。 ....... ........... ： · " '·.'. ...:. _...—: ..... 【圖式簡單說明:^ 為讓本新型之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附亂式^ 第1圖係緣示依照本新型之第一實施例之電漿清潔裝 ； .... . ...: 置的俯視示意圖。 苐3 A圖和第3 B圖係纟會不依照本新型之第二實施例之 電漿清潔裝置的正面示意圖 第4圖係繪示依照本新型之第三實施例之電漿清潔裝 置的正面示意圖^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 第5A圖和第5B圖係纷示依照本新型之第四實施例之 電漿清潔裝置的正面示意圖。 13 M333417 【主要元件符號說明】 a :電康放電區 100、100a、100b、100c :電漿清潔裝置 110 ： 腔體 111 :氣體入口 112 ： 氣體出口 120 :輸送裝 130、 130c .側放電電極 140:電漿電源供應器 141 ： 第一電漿電源供應器 142 ： 第二電漿電源供應器 150 ： 放電電極 160 :磁場控制單元 200 ： 清潔標的物 201 :被清潔表面The electrode 150, or the switching side discharge electrode 13A and the emitter 150, are individually selected. Therefore, the plasma cleaning device 1 of the second embodiment can be selectively used by remote plasma or direct electric material Direct Plasm. Referring to FIG. 4, the electric device according to the third embodiment of the present invention is illustrated. A schematic view of the front side of the slurry cleaning device. Only the differences between the present embodiment and the second embodiment will be described below, and the similarities will not be described herein. Compared with the second embodiment, the plasma cleaning of the third embodiment is omitted. The device W% control unit 160' is used to control the movement of the plasma when the plasma is cleaned, wherein the magnetic field can be selectively applied to the side discharge electrode ΐ3α or the discharge electrode 15^ to touch ^ The specific people on the _ the expected area (such as the circuit area). _ Please refer to the figure #t UM ^ t ^ £ 63⁄4 it φ τρ: ^ g 0 ^ is not repeated here. In the case of the yoke, the yoke or the second embodiment, when the cleaning target 200 is in the cavity 11 ., the main embodiment is the plasma > month > The side discharge electrode ϋΛϋ m 130 of the 糸 device 100c is simultaneously located on the same side of the cleaning target 200 Which side is nw a few to the relative setting, thus forming to 12 M333417 ' .: : - ' .. . .... ... . . . . . . . . . . . . . . . . . . . ......................................:.... The side discharge electrode group, at this time, the side discharge electrode 13〇c ... The plasma is a remote plasma, that is, the surface of the cleaning surface 201 is cleaned directly to the surface of the cleaning object. At this time, the plasma formed between the side discharge electrodes 13 () can be cleaned to be cleaned. The surface is 2〇1, indirectly, please clean the surface to be cleaned 2^, the object is easy to be burned. This new type, anyone who is familiar with this skill, can do all kinds of things without departing from the spirit and scope of the novel. Change and refinement, therefore the scope of protection of this new type. ... - The person defined in the scope of the patent application is subject to change. ......................... " '·.'. ...:. _...—: ..... [Simple description of the figure: ^ To make the above and other objects, features, advantages and embodiments of the present invention more obvious Understand, the attached chaotic type ^ The first figure shows the plasma cleaning device according to the first embodiment of the present invention; .....俯视3 A and 3B are schematic views of a plasma cleaning device according to a second embodiment of the present invention. FIG. 4 is a view showing a plasma cleaning according to a third embodiment of the present invention. Front view of the device ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Figures 5A and 5B show a front view of a plasma cleaning device in accordance with a fourth embodiment of the present invention. 13 M333417 [Description of main component symbols] a: electric kettle discharge zone 100, 100a, 100b, 100c: plasma cleaning device 110: cavity 111: gas inlet 112: gas outlet 120: conveyor 130, 130c. side discharge electrode 140 : plasma power supply 141 : first plasma power supply 142 : second plasma power supply 150 : discharge electrode 160 : magnetic field control unit 200 : cleaning target 201 : cleaned surface