JP2012506629A - 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備 - Google Patents

半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備 Download PDF

Info

Publication number
JP2012506629A
JP2012506629A JP2011532591A JP2011532591A JP2012506629A JP 2012506629 A JP2012506629 A JP 2012506629A JP 2011532591 A JP2011532591 A JP 2011532591A JP 2011532591 A JP2011532591 A JP 2011532591A JP 2012506629 A JP2012506629 A JP 2012506629A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
silicon
substrate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2011532591A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012506629A5 (enExample
Inventor
イ トーマス ラフェル フェレ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP08167461A external-priority patent/EP2180531A1/en
Priority claimed from US12/257,233 external-priority patent/US8124502B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012506629A publication Critical patent/JP2012506629A/ja
Publication of JP2012506629A5 publication Critical patent/JP2012506629A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2011532591A 2008-10-23 2009-10-13 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備 Ceased JP2012506629A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP08167461A EP2180531A1 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US12/257,233 2008-10-23
US12/257,233 US8124502B2 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
EP08167461.6 2008-10-23
PCT/EP2009/063370 WO2010046284A1 (en) 2008-10-23 2009-10-13 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Publications (2)

Publication Number Publication Date
JP2012506629A true JP2012506629A (ja) 2012-03-15
JP2012506629A5 JP2012506629A5 (enExample) 2012-05-17

Family

ID=41809150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011532591A Ceased JP2012506629A (ja) 2008-10-23 2009-10-13 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備

Country Status (5)

Country Link
JP (1) JP2012506629A (enExample)
KR (1) KR20110086833A (enExample)
CN (1) CN102197497A (enExample)
TW (1) TW201030854A (enExample)
WO (1) WO2010046284A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
WO2016194301A1 (ja) * 2015-05-29 2016-12-08 パナソニックＩｐマネジメント株式会社 太陽電池
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
JP7239764B1 (ja) 2021-09-16 2023-03-14 晶科能源（海▲寧▼）有限公司 太陽電池及びその製造方法、光起電力モジュール

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI126401B (fi) * 2011-09-30 2016-11-15 Aalto-Korkeakoulusäätiö Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin
CN104425633B (zh) * 2013-08-30 2016-11-16 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
JP6072129B2 (ja) * 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング
JPWO2018003036A1 (ja) * 2016-06-29 2018-10-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置
CN110707160B (zh) * 2019-10-11 2021-07-16 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN113782638B (zh) * 2021-09-09 2024-10-22 正泰新能科技股份有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Ｐｎｐバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP2002043325A (ja) * 2000-07-27 2002-02-08 Sanyo Electric Co Ltd 高耐圧半導体装置の製造方法
WO2007126441A2 (en) * 2005-12-16 2007-11-08 Bp Corporation North America Inc. Back-contact photovoltaic cells
WO2008028625A2 (de) * 2006-09-04 2008-03-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Ｐｎｐバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP2002043325A (ja) * 2000-07-27 2002-02-08 Sanyo Electric Co Ltd 高耐圧半導体装置の製造方法
WO2007126441A2 (en) * 2005-12-16 2007-11-08 Bp Corporation North America Inc. Back-contact photovoltaic cells
JP2009520369A (ja) * 2005-12-16 2009-05-21 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド バックコンタクト太陽電池
WO2008028625A2 (de) * 2006-09-04 2008-03-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
WO2016194301A1 (ja) * 2015-05-29 2016-12-08 パナソニックＩｐマネジメント株式会社 太陽電池
CN107735866A (zh) * 2015-05-29 2018-02-23 松下知识产权经营株式会社 太阳能电池
JPWO2016194301A1 (ja) * 2015-05-29 2018-03-01 パナソニックＩｐマネジメント株式会社 太陽電池
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
JP7239764B1 (ja) 2021-09-16 2023-03-14 晶科能源（海▲寧▼）有限公司 太陽電池及びその製造方法、光起電力モジュール
JP2023043822A (ja) * 2021-09-16 2023-03-29 晶科能源（海▲寧▼）有限公司 太陽電池及びその製造方法、光起電力モジュール
JP2023078184A (ja) * 2021-09-16 2023-06-06 晶科能源（海▲寧▼）有限公司 太陽電池及びその製造方法、光起電力モジュール
US11804564B2 (en) 2021-09-16 2023-10-31 Jinko Solar Co., Ltd. Solar cell, manufacturing method thereof, and photovoltaic module
JP7420992B2 (ja) 2021-09-16 2024-01-23 晶科能源股分有限公司 太陽電池及びその製造方法、光起電力モジュール

Also Published As

Publication number Publication date
TW201030854A (en) 2010-08-16
KR20110086833A (ko) 2011-08-01
CN102197497A (zh) 2011-09-21
WO2010046284A1 (en) 2010-04-29

Similar Documents

Publication Publication Date Title
US8124502B2 (en) Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
JP2012506629A (ja) 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備
US10629760B2 (en) Method of fabricating an emitter region of a solar cell
US7846762B2 (en) Integrated emitter formation and passivation
CN108963005B (zh) 一种新型复合结构全背面异质结太阳电池及制备方法
US9018516B2 (en) Solar cell with silicon oxynitride dielectric layer
CN115692545A (zh) 一种提升PECVD路线N型TOPCon电池多晶硅活性磷掺杂浓度的方法
US20110277682A1 (en) Directional solid phase crystallization of thin amorphous silicon for solar cell applications
JP2024109927A (ja) パッシベーションコンタクト構造及びその製造方法、太陽電池並びにその製造方法
CN114267753A (zh) 一种TOPCon太阳能电池及其制备方法、光伏组件
WO2015130672A1 (en) Silicon solar cells with epitaxial emitters
WO2025030616A1 (zh) 太阳电池及其制备方法
KR20170057388A (ko) 간소화 침착 공정으로 제조한 태양 전지
EP2180531A1 (en) Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US5242504A (en) Photovoltaic device and manufacturing method therefor
TWI717930B (zh) 矽基太陽能電池及其製造方法
CN120690681A (zh) 一种硼掺杂方法、硼掺杂结构和背接触电池
CN121174671A (en) Preparation method of photovoltaic cell
CN120882142A (zh) 一种降低光伏硅片电阻率的方法和TOPCon电池

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120321

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120321

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20120321

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20120427

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120614

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120912

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121015

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121206

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20130424