JP2009520369A - バックコンタクト太陽電池 - Google Patents
バックコンタクト太陽電池 Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 46
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
Description
本発明は、新規な太陽電池に関する。より詳しくは、本発明は、光エネルギー、特に太陽エネルギーを電気エネルギーに変換するのに非常に効率的であり、裏表面上に電気接点を有する太陽電池に関する。本発明は、また、かかる電池を製造する方法にも関する。
ウエハが太陽電池に形成された際に入射光に面するように意図されたウエハの表面は、本明細書において前面又は前表面と呼び、前面と反対側のウエハの表面は、本明細書において裏面又は裏表面と呼ぶ。
従って、当該技術においては、高い効率を有し、大規模製造法を用いて、且つ好ましくは高温処理工程を用いないか、或いは少なくとも最小の高温処理工程を用いる方法によって製造することができ、電池が、効率を増大するために、ウエハの前面又は前表面上に電気接点を有さず、それによって光を電流に変換するための電池の前表面の利用可能な領域が最大になっている太陽電池が必要とされている。本発明は、かかる太陽電池を提供する。本発明の太陽電池を用いて、太陽電池を太陽に曝露することによって電気エネルギーを効率的に生成することができる。
太陽電池を製造するための本発明方法において有用な半導体ウエハは、好ましくはシリコンを含み、通常、薄い平坦な形状の形態である。シリコンは、所望の場合には、1種類以上の半導体材料、例えばゲルマニウムのような1種類以上の更なる材料を含むことができる。p型ウエハに関しては、ホウ素がp型ドーパントとして広く用いられているが、他のp型ドーパント、例えばアルミニウム、ガリウム、又はインジウムもまた十分である。ホウ素が好ましいp型ドーパントである。かかるドーパントの組み合わせもまた好適である。而して、p型ウエハに関するドーパントは、例えば、ホウ素、アルミニウム、ガリウム、又はインジウムの1以上を含むことができ、好ましくはホウ素を含む。n型シリコンウエハを用いる場合には、ドーパントは、例えば、リン、ヒ素、アンチモン、又はビスマスの1以上であってよい。好適なウエハは、通常、単結晶シリコンのインゴットのようなシリコンインゴットをスライス又はソーイングして、所謂チョクラルスキー(Cz)シリコンウエハのような単結晶ウエハを形成することによって得られる。好適なウエハは、また、成形された多結晶シリコンのブロックをスライス又はソーイングすることによっても製造することができる。シリコンウエハは、また、端面画定膜供給成長法(Edge-defined Film-fed Growth technology, EFG)又は同様の方法のようなプロセスを用いて溶融シリコンから垂直に引き上げることもできる。ウエハは任意の形状であってよいが、ウエハは、通常は、円形、正方形、又は擬正方形の形状である。「擬正方形」とは、通常は丸みのある角部を有するほぼ正方形形状のウエハを意味する。本発明の太陽電池において用いるウエハは、好適には薄いものである。例えば、本発明において有用なウエハは、厚さ約10ミクロン〜厚さ約300ミクロンであってよい。例えば、それらは厚さ約10ミクロン〜約200ミクロンであってよい。それらは、厚さ約10ミクロン〜約30ミクロンであってよい。円形の場合には、ウエハは、約100〜約180mm、例えば102〜178mmの直径を有することができる。正方形又は擬正方形の場合には、約100mm〜約150mmの幅を有することができ、約127〜約178mmの直径を有する丸みのある角部を有することができる。本発明方法において有用なウエハ、及びしたがって本発明方法によって製造される太陽電池は、例えば、約100〜約250cm2の表面積を有することができる。本発明方法において有用な第1のドーパントでドープされたウエハは、約0.1〜約20オーム・cm、通常は約0.5〜約5.0オーム・cmの抵抗率を有することができる。
Claims (15)
- 第1の導電型の半導体材料を含み、第1の受光表面及び該第1の表面の反対側の第2の表面を有するウエハ;
ウエハの第1の表面の上に配置されている第1のパッシベーション層;
ウエハの第2の表面の上に配置されている第2のパッシベーション層;
ウエハの第2の表面の上に配置され、ウエハのものとは反対の導電型を有する点接触を含む第1の電気接点;
ウエハの第2の表面の上に配置され、第1の電気接点から電気的に分離されている点接触を含む第2の電気接点;
を含む太陽電池。 - 半導体ウエハが、ドープされた結晶又は多結晶シリコンを含む、請求項1に記載の太陽電池。
- 第1のパッシベーション層が、窒化ケイ素、水素化アモルファスシリコン、水素化微結晶シリコン、又はこれらの組み合わせを含む、請求項2に記載の太陽電池。
- 第1のパッシベーション層が窒化ケイ素を含む、請求項3に記載の太陽電池。
- 電気接点の点接触に隣接するエミッタ領域を含み、ここで点接触がウエハの表面に侵入している、請求項1に記載の太陽電池。
- 電気接点の点接触に隣接するオーム領域を含み、ここで点接触がウエハの表面に侵入している、請求項1に記載の太陽電池。
- 点接触の一つに近接する反転層を含む、請求項1に記載の太陽電池。
- 点接触がレーザー照射によって形成される、請求項1に記載の太陽電池。
- 接点の一つが、アンチモン、リン、又はこれらの組み合わせの1以上と合金化されたスズを含む、請求項1に記載の太陽電池。
- ウエハが拡散距離を有し、ウエハの厚さに対する拡散距離の比が1.1より大きい、請求項1に記載の太陽電池。
- 第1の導電型を有し、第1の受光表面、及び該第1の表面の反対側の第2の表面を有する半導体ウエハから太陽電池を製造する方法であって、
ウエハの第1の表面の上に配置された第1のパッシベーション層を形成し;
ウエハの第2の表面の上に配置された第2のパッシベーション層を形成し;
第2のパッシベーション層の上に電気接点材料の第1の層を形成し;
電気接点材料の第1の層から第2のパッシベーション層を貫通してウエハ中へと、複数の点接触を形成し;
電気接点材料の第1の層中に第2のパッシベーション層を貫通して、複数の開口を形成し;
電気接点材料の第1の層の上で且つ複数の開口中に絶縁材料の層を形成して、充填された開口を形成し;
絶縁材料の層の上に電気接点材料の第2の層を形成し;
電気接点材料の第2の層から充填された開口を貫通してウエハ中へと、複数の点接触を形成する;
ことを含む上記方法。 - 点接触をレーザー照射によって形成する、請求項11に記載の方法。
- 第1及び第2のパッシベーション層が窒化ケイ素を含む、請求項1に記載の方法。
- 電気接点の一つがスズを含む、請求項1に記載の方法。
- 半導体ウエハが、ドープされた結晶シリコン又は多結晶シリコンを含む、請求項1に記載の方法。
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PCT/US2006/061725 WO2007126441A2 (en) | 2005-12-16 | 2006-12-07 | Back-contact photovoltaic cells |
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EP (1) | EP1961049A2 (ja) |
JP (1) | JP5193058B2 (ja) |
KR (1) | KR20080085169A (ja) |
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WO2007126441A3 (en) | 2008-04-17 |
CN101331614B (zh) | 2011-06-08 |
EP1961049A2 (en) | 2008-08-27 |
CN102157569A (zh) | 2011-08-17 |
JP5193058B2 (ja) | 2013-05-08 |
US20070137692A1 (en) | 2007-06-21 |
KR20080085169A (ko) | 2008-09-23 |
AU2006342794A1 (en) | 2007-11-08 |
WO2007126441A2 (en) | 2007-11-08 |
CN101331614A (zh) | 2008-12-24 |
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