JP2012504341A - Led蛍光体の堆積法 - Google Patents
Led蛍光体の堆積法 Download PDFInfo
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- JP2012504341A JP2012504341A JP2011529187A JP2011529187A JP2012504341A JP 2012504341 A JP2012504341 A JP 2012504341A JP 2011529187 A JP2011529187 A JP 2011529187A JP 2011529187 A JP2011529187 A JP 2011529187A JP 2012504341 A JP2012504341 A JP 2012504341A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title abstract description 22
- 238000000151 deposition Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims abstract description 101
- 238000005538 encapsulation Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000003566 sealing material Substances 0.000 claims abstract description 16
- 230000005855 radiation Effects 0.000 claims description 16
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V1/00—Shades for light sources, i.e. lampshades for table, floor, wall or ceiling lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
【選択図】図2
Description
1.任意タイプのカプセル封止ジオメトリを提供する形式自由で、堆積が容易かつ成形が容易なダム材。
2.ダム材は、広い放射パターンを得るために透過性(即ち、透明なシリコーン)であって光を通し得る。
3.ダム材は、より狭い放射パターンを得るために反射性であって光を反射し得る。
4.ダム材は、ある範囲の高さおよび断面で堆積されることが可能である。
5.ダム材は、任意タイプの基板材料へ塗布されることが可能である。
6.事前に製造される金型の高価かつ時間のかかる設計、製造および組立てを回避する。
Claims (21)
- カプセル封止を形成するための方法であって、
前記カプセル封止の幾何学的形状を決定する工程と、
ダム材を選択する工程と、
前記ダム材を基板へ塗布して前記幾何学的形状を有する領域を画定する境界を形成する工程と、
前記領域を封止材料で充填して前記カプセル封止を形成する工程と、
を含む方法。 - 前記選択する工程は、選択された放射パターンを与えるように前記ダム材を選択することを含む、請求項1に記載の方法。
- 前記選択する工程は、前記ダム材を、光を反射する反射性材料であるように選択することを含む、請求項1に記載の方法。
- 前記選択する工程は、前記ダム材を、光を通す透過性材料であるように選択することを含む、請求項1に記載の方法。
- 前記塗布する工程は、前記ダム材を、それが選択された断面および選択された基板上の高さのうちの少なくとも一方を有するように塗布することを含む、請求項1に記載の方法。
- 前記選択する工程は、前記ダム材としてシリコーンまたはエポキシの一方を選択することを含む、請求項1に記載の方法。
- 前記塗布する工程は、前記ダム材を自動計量分配機で塗布することを含む、請求項1に記載の方法。
- 発光ダイオード(LED)装置であって、
少なくとも1つのLEDチップと、
前記少なくとも1つのLEDチップ上へ配置されるカプセル封止と、
を備え、
前記カプセル封止は、
前記カプセル封止の幾何学的形状を決定する工程と、
ダム材を選択する工程と、
前記ダム材を基板へ塗布して前記幾何学的形状を有する領域を画定する境界を形成する工程と、
前記領域を封止材料で充填して前記カプセル封止を形成する工程と、
によって形成される発光ダイオード(LED)装置。 - 前記ダム材は、選択された放射パターンを与えるように選択される、請求項8に記載の装置。
- 前記ダム材は、光を反射する反射性材料である、請求項8に記載の装置。
- 前記ダム材は、光を通す透過性材料である、請求項8に記載の装置。
- 前記塗布する工程は、前記ダム材を、それが選択された断面および選択された基板上の高さのうちの少なくとも一方を有するように塗布することを含む、請求項8に記載の装置。
- 前記選択する工程は、前記ダム材としてシリコーンまたはエポキシの一方を選択することを含む、請求項8に記載の装置。
- 前記塗布する工程は、前記ダム材を自動計量分配機で塗布することを含む、請求項8に記載の装置。
- 発光ダイオード(LED)ランプであって、
パッケージと、
前記パッケージに結合され、少なくとも1つのLEDチップと前記少なくとも1つのLEDチップ上へ配置されるカプセル封止とを備える発光ダイオード装置と、
を備え、
前記カプセル封止は、
前記カプセル封止の幾何学的形状を決定する工程と、
ダム材を選択する工程と、
前記ダム材を基板へ塗布して前記幾何学的形状を有する領域を画定する境界を形成する工程と、
前記領域を封止材料で充填して前記カプセル封止を形成する工程と、
によって形成される、発光ダイオード(LED)ランプ。 - 前記ダム材は、選択された放射パターンを与えるように選択される、請求項15に記載のランプ。
- 前記ダム材は、光を反射する反射性材料である、請求項15に記載のランプ。
- 前記ダム材は、光を通す透過性材料である、請求項15に記載のランプ。
- 前記塗布する工程は、前記ダム材を、それが選択された断面および選択された基板上の高さのうちの少なくとも一方を有するように塗布することを含む、請求項15に記載のランプ。
- 前記選択する工程は、前記ダム材としてシリコーンまたはエポキシの一方を選択することを含む、請求項15に記載のランプ。
- 前記塗布する工程は、前記ダム材を自動計量分配機で塗布することを含む、請求項15に記載のランプ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/242,274 | 2008-09-30 | ||
US12/242,274 US8247827B2 (en) | 2008-09-30 | 2008-09-30 | LED phosphor deposition |
PCT/US2009/058079 WO2010039546A1 (en) | 2008-09-30 | 2009-09-23 | Led phosphor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012504341A true JP2012504341A (ja) | 2012-02-16 |
Family
ID=42056418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011529187A Pending JP2012504341A (ja) | 2008-09-30 | 2009-09-23 | Led蛍光体の堆積法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8247827B2 (ja) |
JP (1) | JP2012504341A (ja) |
KR (1) | KR20110063793A (ja) |
CN (1) | CN102224607B (ja) |
MY (1) | MY153517A (ja) |
RU (1) | RU2521749C2 (ja) |
WO (1) | WO2010039546A1 (ja) |
Cited By (6)
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JP2013149637A (ja) * | 2012-01-17 | 2013-08-01 | Asahi Glass Co Ltd | 発光装置および発光装置の製造方法 |
JP2013197369A (ja) * | 2012-03-21 | 2013-09-30 | Rohm Co Ltd | 光源装置およびledランプ |
EP2784833A1 (en) | 2013-03-29 | 2014-10-01 | Nichia Corporation | Light emitting device and method of manufacturing the same |
JP2016115897A (ja) * | 2014-12-18 | 2016-06-23 | シチズン電子株式会社 | 発光装置及びその製造方法 |
JP2017139456A (ja) * | 2016-01-29 | 2017-08-10 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2017204502A (ja) * | 2016-05-09 | 2017-11-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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JP7177326B2 (ja) | 2016-01-29 | 2022-11-24 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
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Also Published As
Publication number | Publication date |
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WO2010039546A1 (en) | 2010-04-08 |
CN102224607A (zh) | 2011-10-19 |
RU2011117216A (ru) | 2012-11-10 |
US20100078664A1 (en) | 2010-04-01 |
RU2521749C2 (ru) | 2014-07-10 |
MY153517A (en) | 2015-02-27 |
CN102224607B (zh) | 2016-10-12 |
US8247827B2 (en) | 2012-08-21 |
KR20110063793A (ko) | 2011-06-14 |
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