JP2012503866A - キャリア基板および複数の放射放出半導体部品を備えたオプトエレクトロニクスモジュール、およびその製造方法 - Google Patents
キャリア基板および複数の放射放出半導体部品を備えたオプトエレクトロニクスモジュール、およびその製造方法 Download PDFInfo
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Abstract
【選択図】図2
Description
a)複数の放射放出半導体部品をキャリア基板上に配置するステップであって、キャリア基板が、放射放出半導体部品との電気接続を形成するための構造化された導体トラックを有し、放射放出半導体部品それぞれが、電磁放射を発生させるのに適している活性層と、第1のコンタクト領域と、第2のコンタクト領域と、を備えており、第1のコンタクト領域それぞれが、キャリア基板とは反対側の放射放出半導体部品の面に配置されている、ステップと、
b)放射放出半導体部品に電気絶縁層を形成するステップであって、電気絶縁層が、それぞれの放射放出半導体部品の第1のコンタクト領域の範囲に切取り部を有する、ステップと、
c)電気絶縁層の部分領域に導電性構造を形成するステップであって、導電性構造の1つが、放射放出半導体部品の少なくとも第1のコンタクト領域を、さらなる放射放出半導体部品のさらなる第1のコンタクト領域に、またはキャリア基板の導体トラックに、導電接続する、ステップと、
を含んでいる。
Claims (15)
- キャリア基板(1)および複数の放射放出半導体部品(2)を備えているオプトエレクトロニクスモジュールであって、
− 前記キャリア基板(1)が、前記放射放出半導体部品(2)との電気接続を形成するための構造化された導体トラックを有し、
− 前記放射放出半導体部品(2)それぞれが、電磁放射を生成するのに適している活性層(2a)と、第1のコンタクト領域(21)と、第2のコンタクト領域(22)と、を備えており、前記第1のコンタクト領域(21)それぞれが、前記キャリア基板(1)とは反対側の前記放射放出半導体部品(2)の面に配置されており、
− 前記放射放出半導体部品(2)に電気絶縁層(4)が設けられており、前記電気絶縁層(4)それぞれが、前記放射放出半導体部品(2)の前記第1のコンタクト領域(21)の範囲に切取り部を有し、
− 前記電気絶縁層(4)の一部分の上に導電性構造(8)が配置されており、
− 前記導電性構造の1つが、放射放出半導体部品(2)の少なくとも前記第1のコンタクト領域(21)を、さらなる放射放出半導体部品(2)のさらなる第1のコンタクト領域に、または前記キャリア基板(1)の導体トラックに、導電接続している、
オプトエレクトロニクスモジュール。 - 少なくとも前記放射放出半導体部品(2)の間に平坦化層(3)が配置されている、
請求項1に記載のモジュール。 - 前記平坦化層(3)が少なくとも1種類の変換要素を含んでいる、
請求項2に記載のモジュール。 - 前記電気絶縁層(4)が少なくとも1種類の変換要素(6)を含んでいる、
請求項1から請求項3のいずれかに記載のモジュール。 - 前記放射放出半導体部品(2)が、前記キャリア基板(1)上に配置されているフレーム(7)によって一緒に囲まれている、
請求項1から請求項4のいずれかに記載のモジュール。 - 前記キャリア基板(1)がフレキシブル基板である、
請求項1から請求項5のいずれかに記載のモジュール。 - 前記放射放出半導体部品(2)が上に配置されている、前記キャリア基板(1)の面が、非平面的である、
請求項1から請求項6のいずれかに記載のモジュール。 - 前記導電性構造(8)が、前記電気絶縁層(4)の上に配置されている異方性層によって形成されており、前記異方性層それぞれが、前記放射放出半導体部品(2)の少なくとも前記第1のコンタクト領域(21)の範囲に導電性領域(8a)を有する、
請求項1から請求項7のいずれかに記載のモジュール。 - 前記電気絶縁層(4)が、構造化された回路基板によって形成されており、前記導電性構造(8)が、前記回路基板から突き出している導電性ウェブによって形成されている、
請求項1から請求項7のいずれかに記載のモジュール。 - 前記電気絶縁層(4)が、それぞれの前記放射放出半導体部品(2)の周囲、それぞれの前記放射放出半導体部品(2)の側面領域の一部分に延在しており、前記放射放出半導体部品(2)それぞれの前記第1のコンタクト領域(21)が、前記キャリア基板(1)とは反対側の前記放射放出半導体部品(2)の面に前記第1のコンタクト領域(21)が存在しないように、前記電気絶縁層(4)の上に配置されている、
請求項1から請求項9のいずれかに記載のモジュール。 - オプトエレクトロニクスモジュールを製造する方法であって、
− 複数の放射放出半導体部品(2)をキャリア基板(1)上に配置するステップであって、前記キャリア基板(1)が、前記放射放出半導体部品(2)との電気接続を形成するための構造化された導体トラックを有し、前記放射放出半導体部品(2)それぞれが、電磁放射を発生させるのに適している活性層(2a)と、第1のコンタクト領域(21)と、第2のコンタクト領域(22)と、を備えており、前記第1のコンタクト領域(21)それぞれが、前記キャリア基板(1)とは反対側の前記放射放出半導体部品(2)の面に配置されている、前記ステップと、
− 前記放射放出半導体部品(2)に電気絶縁層(4)を形成するステップであって、前記電気絶縁層(4)が、それぞれの前記放射放出半導体部品(2)の前記第1のコンタクト領域(21)の範囲に切取り部(4a)を有する、前記ステップと、
− 前記電気絶縁層(4)の部分領域に導電性構造(8)を形成するステップであって、前記導電性構造(8)の1つが、放射放出半導体部品(2)の少なくとも前記第1のコンタクト領域(21)を、さらなる放射放出半導体部品(2)のさらなる第1のコンタクト領域(21)に、または前記キャリア基板(1)の導体トラックに、導電接続する、前記ステップと、
を含んでいる、方法。 - 前記導電性構造(8)が印刷法によって形成される、
請求項11に記載の方法。 - 前記導電性構造(8)が蒸着によって形成される、
請求項11に記載の方法。 - 前記導電性構造(8)が、前記電気絶縁層(4)の上に配置される異方性層によって形成され、前記異方性層が、前記放射放出半導体部品(2)の少なくとも前記第1のコンタクト領域(21)の範囲において導電性として具体化される、
請求項11に記載の方法。 - 前記導電性構造(8)それぞれが導電性ウェブとして具体化され、前記ウェブそれぞれが、前記放射放出半導体部品(2)の前記第1のコンタクト領域(21)に、スタンピングウェッジ工程によって導電接続される、
請求項11に記載の方法。
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DE102008049188A DE102008049188A1 (de) | 2008-09-26 | 2008-09-26 | Optoelektronisches Modul mit einem Trägersubstrat und einer Mehrzahl von strahlungsemittierenden Halbleiterbauelementen und Verfahren zu dessen Herstellung |
DE102008049188.8 | 2008-09-26 | ||
PCT/DE2009/001217 WO2010034278A1 (de) | 2008-09-26 | 2009-08-25 | Optoelektronisches modul mit einem trägersubstrat und einer mehrzahl von strahlungsemittierenden halbleiterbauelementen und verfahren zu dessen herstellung |
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EP (1) | EP2297780B1 (ja) |
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TW201019458A (en) | 2010-05-16 |
CN102165588B (zh) | 2013-09-25 |
EP2297780A1 (de) | 2011-03-23 |
US20140030829A1 (en) | 2014-01-30 |
DE102008049188A1 (de) | 2010-04-01 |
US8461604B2 (en) | 2013-06-11 |
EP2297780B1 (de) | 2019-06-12 |
WO2010034278A1 (de) | 2010-04-01 |
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US20110309377A1 (en) | 2011-12-22 |
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